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    Semiconductor Device with Trench Structure and Methods of Manufacturing
    31.
    发明申请
    Semiconductor Device with Trench Structure and Methods of Manufacturing 有权
    具有沟槽结构和制造方法的半导体器件

    公开(公告)号：US20140252563A1

    公开(公告)日：2014-09-11

    申请号：US14281329

    申请日：2014-05-19

    Applicant: Infineon Technologies AG

    Inventor： Hans-Joachim Schulze ,  Anton Mauder

    IPC: H01L29/06 ,  H01L21/78

    CPC classification number: H01L29/06 ,  B24B7/228 ,  B24B37/013 ,  B24B37/042 ,  H01L21/302 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3247 ,  H01L21/764 ,  H01L21/78 ,  H01L22/26 ,  H01L29/66333

    Abstract: A vertical semiconductor device includes a semiconductor body having semiconductor portions of semiconductor elements of the vertical semiconductor device, a front side contact on a front surface of the semiconductor body and a back side contact on an opposite back surface of the semiconductor body, and a trench structure extending from the front surface into the semiconductor body. The trench structure includes an etch stop layer lining an inner surface of the trench structure and surrounding a void within the trench structure.

    Abstract translation: 一种垂直半导体器件包括半导体本体，该半导体本体具有半导体器件的半导体元件的半导体部分，半导体本体的前表面上的前侧接触件和半导体本体的相对的后表面上的后侧接触件，以及沟槽 结构从前表面延伸到半导体本体。 沟槽结构包括衬在沟槽结构的内表面并围绕沟槽结构内的空隙的蚀刻停止层。

    Method of manufacturing silicon carbide semiconductor devices
    35.
    发明授权
    Method of manufacturing silicon carbide semiconductor devices 有权

    公开(公告)号：US12300724B2

    公开(公告)日：2025-05-13

    申请号：US17496050

    申请日：2021-10-07

    Applicant: Infineon Technologies AG

    Inventor： Andreas Meiser ,  Caspar Leendertz ,  Anton Mauder ,  Roland Rupp

    IPC: H01L29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

    Abstract: A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body, the trench structure having a gate electrode that is dielectrically insulated from the semiconductor body, a shielding region adjoining a bottom of the trench structure and forming a first pn junction with a drift structure of the semiconductor body, a body region forming a second pn junction with the drift structure, a source zone arranged between the first surface and the body region and forming a third pn junction with the source zone, wherein a contact portion of the body region extends to the first surface, wherein the source zone surrounds the contact portion of the body region at the first surface, and wherein the trench structure forms an enclosed loop at the first surface that surrounds the source zone and the contact portion of the body region at the first surface.

    Power Semiconductor Device and Method of Producing a Power Semiconductor Device
    36.
    发明申请
    Power Semiconductor Device and Method of Producing a Power Semiconductor Device 有权

    公开(公告)号：US20250113583A1

    公开(公告)日：2025-04-03

    申请号：US18897067

    申请日：2024-09-26

    Applicant: Infineon Technologies AG

    Inventor： Hans-Jürgen Thees ,  Anton Mauder

    IPC: H01L29/417 ,  H01L21/283 ,  H01L21/311 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78

    Abstract: A power semiconductor device includes: a semiconductor body with a vertically protruding fin configured to conduct a portion of a nominal load current of the device; and a first load terminal in contact with an upper portion of the fin. An electrode material is arranged adjacent to the fin and electrically insulated from the fin by insulation material. The electrode material is electrically insulated from the first load terminal by an insulating material. The power semiconductor device further includes, on top of the electrode material, insulating sidewall spacers adjacent to the insulating material and the insulation material. The sidewall spacers terminate at a pull-back distance below the top of the fin. The pull-back distance amounts to at least 90% of a width of the fin at the top of the fin.

    Power semiconductor device
    38.
    发明授权
    Power semiconductor device 有权

    公开(公告)号：US11276772B2

    公开(公告)日：2022-03-15

    申请号：US16864608

    申请日：2020-05-01

    Applicant: Infineon Technologies AG

    Inventor： Anton Mauder ,  Franz-Josef Niedernostheide ,  Christian Philipp Sandow

    IPC: H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

    Abstract: A power semiconductor transistor includes: a semiconductor body coupled to a load terminal; a drift region in the semiconductor body and having dopants of a first conductivity type; a first trench extending into the semiconductor body along a vertical direction and including a control electrode electrically insulated from the semiconductor body by an insulator; a second trench extending into the semiconductor body along the vertical direction; a mesa region arranged between the trenches and including a source region electrically connected to the load terminal and a channel region separating the source and drift regions; and a portion of a contiguous plateau region of a second conductivity type arranged in the semiconductor drift region and extending below the trenches and below the channel and source regions, the contiguous plateau region having a plurality of openings aligned below the channel region in a widthwise direction of the channel region.

    Mesa Contact for a Power Semiconductor Device and Method of Producing a Power Semiconductor Device
    39.
    发明申请
    Mesa Contact for a Power Semiconductor Device and Method of Producing a Power Semiconductor Device 有权

    公开(公告)号：US20220020876A1

    公开(公告)日：2022-01-20

    申请号：US17374323

    申请日：2021-07-13

    Applicant: Infineon Technologies AG

    Inventor： Anton Mauder ,  Hans-Juergen Thees

    IPC: H01L29/78 ,  H01L29/739 ,  H01L29/66 ,  H01L29/417

    Abstract: A power semiconductor device includes: a semiconductor body with a drift region; a plurality of trenches, wherein two adjacent trenches laterally confine a mesa of the semiconductor body. Each trench extends along a vertical direction and includes a trench electrode, and has a trench width along a first lateral direction and a trench length along a second lateral direction perpendicular to the first lateral direction, the trench length amounting to at least five times the trench width. The device further includes: a semiconductor body region of a second conductivity type in the mesa; a source region in the mesa; an insulation layer above and/or on the source region; a contact plug that extends at least from an upper surface of the insulation layer along the vertical direction so as to contact both the source region and the semiconductor body region.

    Semiconductor device including trench structures and manufacturing method
    40.
    发明授权
    Semiconductor device including trench structures and manufacturing method 有权

    公开(公告)号：US11121220B2

    公开(公告)日：2021-09-14

    申请号：US16700475

    申请日：2019-12-02

    Applicant: Infineon Technologies AG

    Inventor： Andreas Meiser ,  Caspar Leendertz ,  Anton Mauder ,  Roland Rupp

    IPC: H01L29/10 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/16

    Abstract: A semiconductor device includes a silicon carbide semiconductor body including a source region of a first conductivity type, a body region of a second conductivity type, shielding regions of the second conductivity type and compensation regions of the second conductivity type. Trench structures extend from a first surface into the silicon carbide semiconductor body along a vertical direction. Each of the trench structures includes an auxiliary electrode at a bottom of the trench structure and a gate electrode between the auxiliary electrode and the first surface. The auxiliary electrode is electrically insulated from the gate electrode. The auxiliary electrode of each of the trench structures is adjoined by at least one of the shielding regions at the bottom of the trench structure. Each of the shielding regions is adjoined by at least one of the compensation regions at the bottom of the shielding region.

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