公开(公告)号：US08893923B2

公开(公告)日：2014-11-25

申请号：US13687906

申请日：2012-11-28

Applicant: Intermolecular, Inc.

Inventor： Satbir Kahlon ,  Aaron T. Francis ,  Chi-I Lang ,  Gregory P. Lim ,  Jeffrey Chih-Hou Lowe ,  Robert Anthony Sculac

IPC: B67B7/00 ,  H01L21/00

CPC classification number: H01L21/00 ,  H01L21/67017 ,  H01L21/6715 ,  Y10T137/0318 ,  Y10T137/0424 ,  Y10T137/86493 ,  Y10T137/87249 ,  Y10T137/87281

Abstract: Provided are methods and systems for dispensing different chemicals used for high productivity combinatorial processing. A dispense panel may include multiple inlet lines for supplying different chemicals. Each inlet line is connected to its own three-way valve that either allows the supplied chemical to flow from the inlet line towards a dispense valve connected to a dispense manifold (during dispensing of the supplied chemical) or allows another chemical to flow from the dispense valve to a waste manifold (during priming of the dispense manifold with this other chemical). Specifically, during priming a chemical supplied from its inlet line and is passed through a corresponding three-way valve and is directed to its dispense valve and then into the dispense manifold. Other dispense valves and three-way valves of the dispense panel allow this chemical to flow out of the dispense manifold, thereby priming remaining parts of the panel.

Abstract translation: 提供了用于分配用于高生产率组合处理的不同化学品的方法和系统。 分配面板可以包括用于供应不同化学品的多个入口管线。 每个入口管路连接到其自己的三通阀，其允许供应的化学品从入口管线流向连接到分配歧管的分配阀（在分配供应的化学品期间）或允许另一种化学品从分配流出 阀门到废液歧管（在使用这种其他化学品的分配歧管启动期间）。 具体来说，在从其入口管线引入化学物质并通过相应的三通阀时，被引导到其分配阀然后进入分配歧管。 分配面板的其他分配阀和三通阀允许该化学品流出分配歧管，从而引发面板的剩余部分。

公开(公告)号：US08889479B2

公开(公告)日：2014-11-18

申请号：US13675695

申请日：2012-11-13

Applicant: Intermolecular, Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak ,  Jinhong Tong

IPC: H01L21/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US20140273525A1

公开(公告)日：2014-09-18

申请号：US14019961

申请日：2013-09-06

Applicant: Intermolecular, Inc.

Inventor： Kurt Pang ,  Sean Barstow ,  Chi-I Lang ,  Michael Miller ,  Sandip Niyogi ,  Prashant B. Phatak

IPC: H01L21/02

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 Å-thick Al2O3 films.

Abstract translation: 通过原子层沉积（ALD）沉积具有适合于高k栅极电介质的低泄漏电流的金属氧化物膜（例如氧化铝）。 金属沉积阶段后的清洗时间为5-15秒，氧化阶段后的吹扫时间延长超过60秒。 延长后氧化吹扫在30Å厚的Al2O3薄膜中产生了数量级的泄漏电流。

公开(公告)号：US20140273493A1

公开(公告)日：2014-09-18

申请号：US14031975

申请日：2013-09-19

Applicant: Intermolecular, Inc.

Inventor： Ratsamee Limdulpaiboon ,  Chi-I Lang ,  Sandip Niyogi ,  J. Watanabe

IPC: H01L21/3065

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated hydrogen species. The activated hydrogen species can be used to etch/clean semiconductor oxide surfaces such as silicon oxide or germanium oxide.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 等离子体系统可用于产生活性氢物质。 活化的氢物质可用于蚀刻/清洁半导体氧化物表面，例如氧化硅或氧化锗。

公开(公告)号：US08822313B2

公开(公告)日：2014-09-02

申请号：US13722820

申请日：2012-12-20

Applicant: Intermolecular, Inc.

Inventor： Chi-I Lang ,  Sandip Niyogi

IPC: H01L21/265 ,  H01L21/365 ,  H01L21/02

CPC classification number: H01L21/02 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00635 ,  B01J2219/0075 ,  B01J2219/00756 ,  C23C16/02 ,  C23C16/04 ,  C23C16/45525 ,  H01J37/32422 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/67207

Abstract: Embodiments provided herein describe methods and systems for processing substrates. A plasma including radical species and charged species is generated. The charged species of the plasma are collected. A substrate is exposed to the radical species of the plasma. A layer is formed on the substrate after exposing the substrate to the radical species.

Abstract translation: 本文提供的实施例描述了用于处理衬底的方法和系统。 产生包括自由基物质和带电物质的等离子体。 收集等离子体的带电物质。 衬底暴露于等离子体的自由基。 在将基板暴露于自由基物质之后，在基板上形成层。

公开(公告)号：US20140179095A1

公开(公告)日：2014-06-26

申请号：US13725812

申请日：2012-12-21

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Chi-I Lang

IPC: H01L21/28

CPC classification number: H01L21/28255 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

Abstract: Embodiments provided herein describe methods and systems for forming gate dielectrics for field effect transistors. A substrate including a germanium channel and a germanium oxide layer on a surface of the germanium channel is provided. A metallic layer is deposited on the germanium oxide layer. The metallic layer may be nanocrystalline or amorphous. The deposition of the metallic layer causes the germanium oxide layer to be reduced such that a metal oxide layer is formed adjacent to the germanium channel.

Abstract translation: 本文提供的实施例描述了用于形成场效应晶体管的栅极电介质的方法和系统。 提供了在锗通道的表面上包括锗通道和锗氧化物层的衬底。 金属层沉积在氧化锗层上。 金属层可以是纳米晶体或无定形的。 金属层的沉积使得氧化锗层被还原，使得邻近锗通道形成金属氧化物层。

公开(公告)号：US20140170857A1

公开(公告)日：2014-06-19

申请号：US13718995

申请日：2012-12-18

Applicant: INTERMOLECULAR, INC.

Inventor： Chi-I Lang ,  Shuogang Huang ,  Jeffrey Chih-Hou Lowe ,  Robert Anthony Sculac

IPC: B44C1/22 ,  H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/32134 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823842

Abstract: A method of combinatorial processing involving etching a first material and a second material on a substrate comprising: etching the first material with a high first etch rate with a first etchant; etching the second material with a high second etch rate with a second etchant, wherein the first etchant and the second etchant are used sequentially without being separated by a rinse.

Abstract translation: 一种组合处理方法，包括在衬底上蚀刻第一材料和第二材料，包括：用第一蚀刻剂以高的第一蚀刻速率蚀刻第一材料; 用第二蚀刻剂以高的第二蚀刻速率蚀刻第二材料，其中顺序地使用第一蚀刻剂和第二蚀刻剂，而不用冲洗分离。

公开(公告)号：US08575021B2

公开(公告)日：2013-11-05

申请号：US13829290

申请日：2013-03-14

Applicant: Intermolecular, Inc.

Inventor： Thomas R. Boussie ,  Tony P. Chiang ,  Anh Duong ,  Zachary Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Sandra G. Malhotra ,  Jinhong Tong

IPC: H01L21/31 ,  H01L21/312 ,  H01L21/32

CPC classification number: H01L21/02112 ,  H01L21/02123 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/7685

Abstract: Methods for substrate processing are described. The methods include forming a material layer on a substrate. The methods include selecting constituents of a molecular masking layer (MML) to remove an effect of variations in the material layer as a result of substrate processing. The methods include normalizing the surface characteristics of the material layer by selectively depositing the MML on the material layer.

Abstract translation: 描述基板处理方法。 所述方法包括在基底上形成材料层。 所述方法包括选择分子屏蔽层（MML）的成分以消除作为衬底处理的结果的材料层中的变化的影响。 所述方法包括通过在材料层上选择性地沉积MML来使材料层的表面特性归一化。

公开(公告)号：US09245848B2

公开(公告)日：2016-01-26

申请号：US14488712

申请日：2014-09-17

Applicant: Intermolecular, Inc.

Inventor： Anh Duong ,  Tony Chiang ,  Zachary M. Fresco ,  Nitin Kumar ,  Chi-I Lang ,  Jinhong Tong ,  Anna Tsizelmon

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/768 ,  C09D129/04

CPC classification number: H01L23/5329 ,  C09D129/04 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of modifying a patterned semiconductor substrate are presented including: providing a patterned semiconductor substrate surface including a dielectric region and a conductive region; and applying an amphiphilic surface modifier to the dielectric region to modify the dielectric region. In some embodiments, modifying the dielectric region includes modifying a wetting angle of the dielectric region. In some embodiments, modifying the wetting angle includes making a surface of the dielectric region hydrophilic. In some embodiments, methods further include applying an aqueous solution to the patterned semiconductor substrate surface. In some embodiments, the conductive region is selectively enhanced by the aqueous solution. In some embodiments, methods further include providing the dielectric region formed of a low-k dielectric material. In some embodiments, applying the amphiphilic surface modifier modifies an interaction of the low-k dielectric region with a subsequent process.

公开(公告)号：US09103871B2

公开(公告)日：2015-08-11

申请号：US14077545

申请日：2013-11-12

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Chi-I Lang

IPC: G01R31/26 ,  G01N21/55 ,  H02S50/10

CPC classification number: G01R31/26 ,  G01N21/55 ,  G01R31/2607 ,  H02S50/10

Abstract: Simultaneous measurement of an internal quantum efficiency and an external quantum efficiency of a solar cell using an emitter that emits light; a three-way beam splitter that splits the light into solar cell light and reference light, wherein the solar cell light strikes the solar cell; a reference detector that detects the reference light; a reflectance detector that detects reflectance light, wherein the reflectance light comprises a portion of the solar cell light reflected off the solar cell; a source meter operatively coupled to the solar cell; a multiplexer operatively coupled to the solar cell, the reference detector, and the reflectance detector; and a computing device that simultaneously computes the internal quantum efficiency and the external quantum efficiency of the solar cell.

Abstract translation: 使用发射光的同时测量太阳能电池的内部量子效率和外部量子效率; 三光束分离器，其将光分解成太阳能电池光和参考光，其中太阳能电池光照射到太阳能电池; 检测参考光的参考检测器; 反射光检测器，其检测反射光，其中所述反射光包括从太阳能电池反射的太阳能电池光的一部分; 可操作地耦合到太阳能电池的源计量器; 可操作地耦合到太阳能电池，参考检测器和反射检测器的多路复用器; 以及同时计算太阳能电池的内部量子效率和外部量子效率的计算装置。