公开(公告)号：US20080274622A1

公开(公告)日：2008-11-06

申请号：US12134554

申请日：2008-06-06

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: H01L21/302

CPC classification number: H01L21/0228 ,  C23C16/34 ,  C23C16/45542 ,  C23C16/515 ,  H01L21/02274 ,  H01L21/3141

Abstract: A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method includes exposing at least some of the surface to both of the at least two regions. Exposing the surface to both of the at least two regions may include rotating the plasma and may cyclically expose the surface to the plasma density differences. Exposing to both of the at least two regions may modify a composition and/or structure of the surface. The plasma may include a plasmoid characterized by a steady state plasma wave providing multiple plasma density lobes uniformly distributed about an axis of symmetry and providing plasma between the lobes exhibiting lower plasma densities. Depositing the layer can include ALD and exposure may remove an ALD precursor ligand.

Abstract translation: 等离子体处理方法包括在处理室中提供衬底，所述衬底具有表面，并在处理室中产生等离子体。 等离子体提供至少两个显示不同等离子体密度的区域。 该方法包括将表面中的至少一些暴露于至少两个区域。 将表面暴露于至少两个区域中的两个可以包括旋转等离子体并且可以将表面循环地暴露于等离子体密度差。 暴露于至少两个区域的两者可以改变表面的组成和/或结构。 等离子体可以包括等离子体，其特征在于稳态等离子体波，其提供均匀分布在对称轴上的等离子体密度波瓣，并且在显示较低等离子体密度的波瓣之间提供等离子体。 沉积层可以包括ALD并且暴露可以去除ALD前体配体。

公开(公告)号：US20080038863A1

公开(公告)日：2008-02-14

申请号：US11503680

申请日：2006-08-14

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC: H01L21/00

CPC classification number: H01L31/02325 ,  B29D11/00365 ,  H01L22/20 ,  H01L27/14627

Abstract: Methods and apparatus may operate to position a sample, including an imager lens surface, within a processing chamber. Further activities may include creating a layer of reactive material in proximity with the imager lens surface, and exciting a portion of the layer of reactive material in proximity with the imager lens surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the imager lens surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract translation: 方法和装置可以操作以将包括成像器透镜表面的样品在处理室内定位。 进一步的活动可以包括在成像器透镜表面附近形成一层反应性材料，以及在成像器透镜表面附近激发反应性材料层的一部分以形成化学自由基。 附加活动可以包括将接近成像器透镜表面的激发部分的材料的一部分移除到预定水平，并且继续创建，激励和移除动作直到发生多个停止标准中的至少一个。

公开(公告)号：US07255128B2

公开(公告)日：2007-08-14

申请号：US11456055

申请日：2006-07-06

Applicant: Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

Inventor： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

IPC: H01L21/66 ,  F17D3/00 ,  F16K37/00 ,  G01B7/00

CPC classification number: G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

Abstract translation: 提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。

公开(公告)号：US07056833B2

公开(公告)日：2006-06-06

申请号：US10669671

申请日：2003-09-23

Applicant: Neal R. Rueger ,  William Budge ,  Weimin Li ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  William Budge ,  Weimin Li ,  Gurtej S. Sandhu

IPC: H01L21/31

CPC classification number: H01L21/02274 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

Abstract translation: 本发明包括填充半导体衬底中的间隙的方法。 在反应室内设置底物和含有至少一种重氢化合物的气体混合物。 通过同时沉积和蚀刻该层，使气体混合物反应以在衬底上形成一层材料。 材料层填充间隙，使得间隙内的材料基本上无空隙。 本发明包括提供改进的沉积速率均匀性的方法。 在选自由D 2，HD，DT，T 2和TH组成的组中的至少一种气体存在下，材料沉积在表面上。 沉积期间的净沉积速率在整个表面上具有相对于在其它实质上相同的条件下利用H 2 N沉积期间发生的相应的方差程度可以显着改善的表面上的变化程度。

公开(公告)号：US06866900B2

公开(公告)日：2005-03-15

申请号：US10460624

申请日：2003-06-11

Applicant: Weimin Li ,  Neal R. Rueger

Inventor： Weimin Li ,  Neal R. Rueger

IPC: C23C16/44 ,  C23C16/50 ,  H01J37/32 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/00

CPC classification number: H01J37/32091 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

Abstract: The invention encompasses a method for sequentially processing separate sets of wafers within a chamber. Each set is subjected to plasma-enhanced deposition of material within the chamber utilizing a plasma that is primarily inductively coupled. After the plasma-enhanced deposition, and while the set remains within the chamber, the plasma is changed to a primarily capacitively coupled plasma. The cycling of the plasma from primarily inductively coupled to primarily capacitively coupled can increase the ratio of processed wafers to plasma reaction chamber internal sidewall cleanings that can be obtained while maintaining low particle counts on the processed wafers.

Abstract translation: 本发明包括用于在腔室内顺序处理单独的晶片组的方法。 使用主要感应耦合的等离子体，使每组在室内进行等离子体增强的材料沉积。 在等离子体增强沉积之后，并且当集合保持在室内时，等离子体被改变为主要的电容耦合等离子体。 等离子体从主要电感耦合到主要电容耦合的循环可以增加处理的晶片与等离子体反应室内部侧壁清洁的比例，其可以在保持处理的晶片上的低颗粒计数的同时获得。

公开(公告)号：US06606802B2

公开(公告)日：2003-08-19

申请号：US09998078

申请日：2001-11-30

Applicant: Gurtej S. Sandhu ,  Michael Li ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  Michael Li ,  Neal R. Rueger

IPC: F26B300

CPC classification number: H01L21/67028 ,  C23C16/4405 ,  H01J37/32862

Abstract: Method and apparatus are disclosed for improving the cleaning efficiency of a high density plasma system by introducing thermally hot gases to heat downstream chamber walls to improve the fluorine attack on deposit coatings. In certain embodiments of the invention, the cleaning gas and thermally hot gas are allowed into the region of the high vacuum pump to provide cleaning of the high vacuum pump.

Abstract translation: 公开了用于通过引入热热气体来加热下游室壁以改善对沉积物涂层的氟侵蚀来提高高密度等离子体系统的清洁效率的方法和装置。 在本发明的某些实施例中，清洁气体和热热气体被允许进入高真空泵的区域以提供高真空泵的清洁。

公开(公告)号：US08828883B2

公开(公告)日：2014-09-09

申请号：US12862359

申请日：2010-08-24

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: H01L21/302 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01L21/67069

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract translation: 公开了用于处理衬底的设备和方法。 处理装置包括用于在其中产生等离子体的腔室，与腔室相关联的电极以及耦合到电极的信号发生器。 信号发生器以足够的幅度和足够的导通时间和关断时间的占空比向电极施加DC脉冲以引起腔室内的事件。 根据DC脉冲的振幅，从室内的气体产生等离子体。 通过响应于导通时间期间的DC脉冲的幅度，将等离子体的离子加速到腔室中的衬底来产生能量离子。 一些能量离子在关闭时间期间响应于DC脉冲被中和到能量中性粒子。 一些精力充沛的中性粒子以足够的能量冲击衬底，从而在衬底上引起化学反应。

公开(公告)号：US08674602B2

公开(公告)日：2014-03-18

申请号：US13593280

申请日：2012-08-23

Applicant: Neal R. Rueger ,  Stephen J. Kramer

Inventor： Neal R. Rueger ,  Stephen J. Kramer

IPC: H01J17/49 ,  H01J9/00

CPC classification number: H01J9/02 ,  H01J11/10 ,  H01J37/32596 ,  H05H1/2406 ,  H05H1/46 ,  H05H2001/466

Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.

Abstract translation: 一些实施例包括形成等离子体产生微结构的方法。 铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。 可以在开口内形成导电衬里，并且可以形成电路以控制通过导电衬套的电流。 导电衬里形成多个中空阴极，并且电流流动被配置为在中空阴极内产生和维持等离子体。 各种空心阴极内的等离子体或一组空心阴极可以独立控制。 这种独立控制的等离子体可用于在显示器或基板上产生图案。 在一些实施例中，等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。 一些实施例包括包含多个等离子体产生结构的构造和组件。

公开(公告)号：US08389415B2

公开(公告)日：2013-03-05

申请号：US12861543

申请日：2010-08-23

Applicant: Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

Inventor： Neal R. Rueger ,  Mark J. Williamson ,  Gurtej S. Sandhu ,  Justin R. Arrington

IPC: H01L21/302

CPC classification number: H01L31/02325 ,  B29D11/00365 ,  H01L22/20 ,  H01L27/14627

Abstract: Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract translation: 方法和装置可以操作以将样品定位在处理室内并在样品的表面上操作。 进一步的活动可以包括在表面附近形成一层反应性材料，并且激发邻近表面的一部分反应性材料以形成化学自由基。 另外的活动可以包括将表面的被激发部分附近的材料的一部分移除到预定水平，并且继续创建，激励和移除动作，直到出现多个停止标准中的至少一个。

公开(公告)号：US20120202350A1

公开(公告)日：2012-08-09

申请号：US13447520

申请日：2012-04-16

Applicant: Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/302

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除每对间隔件形成的心轴中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替的层，非晶碳沉积在剩余的间隔物周围，随后在无定形碳上形成成对隔离物的多个循环，去除一对隔离物之一并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。