公开(公告)号：US07772709B2

公开(公告)日：2010-08-10

申请号：US12196590

申请日：2008-08-22

申请人： Tetsuya Ueda ,  Takaaki Shirasawa

发明人： Tetsuya Ueda ,  Takaaki Shirasawa

IPC分类号： H01L23/28 ,  H01L21/48

CPC分类号： H01L23/5385 ,  H01L21/565 ,  H01L23/4334 ,  H01L23/49537 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L25/117 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01087 ,  H01L2924/12044 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A resin sealed semiconductor device includes a first semiconductor switching device having a first emitter terminal and a first collector terminal bonded to its top and bottom surfaces respectively, a second semiconductor switching device having a second emitter terminal and a second collector terminal bonded to its top and bottom surfaces respectively, a first heat sink directly or indirectly bonded to the first collector terminal, a second heat sink directly or indirectly bonded to the second collector terminal, and a molding resin integrally covering the first and second semiconductor switching devices. The first and second heat sinks are exposed from the molding resin. The first emitter terminal faces and is spaced apart from the second emitter terminal.

摘要翻译： 树脂密封半导体器件包括第一半导体开关器件，其具有分别与其顶表面和底表面结合的第一发射极端子和第一集电极端子，第二半导体开关器件具有第二发射极端子和与其顶部接合的第二集电极端子， 直接或间接地接合到第一集电端子的第一散热器，直接或间接地结合到第二集电端子的第二散热器，以及整体地覆盖第一和第二半导体开关器件的模制树脂。 第一和第二散热片从成型树脂露出。 第一发射极端子面与第二发射极端子间隔开。

公开(公告)号：US20100060388A1

公开(公告)日：2010-03-11

申请号：US12530102

申请日：2008-03-05

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01P3/08

CPC分类号： H01Q1/38 ,  H01P1/203 ,  H01P1/207 ,  H01P1/32 ,  H01Q13/206

摘要： A transmission line microwave apparatus includes at least one nonreciprocal transmission line part, which includes a series branch circuit equivalently including a capacitive element and a shunt branch circuit equivalently including an inductive element. The nonreciprocal transmission line part has gyrotropic characteristic by being magnetized in a magnetization direction different from the propagation direction of a microwave, and has an asymmetric structure to a plane formed by the propagation direction and the magnetization direction. The nonreciprocal transmission line part has a propagation constant and an operating frequency set in a dispersion curve that represents a relation between the propagation constant and the operating frequency so that the propagation constant in the forward direction and the propagation constant in the backward direction have nonreciprocal phase characteristics different from each other. A microwave transmission line is constituted by cascade-connecting at least one non-reciprocal transmission line part between first and second ports.

摘要翻译： 传输线微波装置包括至少一个不可逆传输线部分，其包括等效地包括电容元件的串联分支电路和等效地包括电感元件的分流分支电路。 不可逆传输线部分通过在与微波的传播方向不同的磁化方向上磁化而具有陀螺特性，并且具有与由传播方向和磁化方向形成的平面不对称的结构。 不可逆传输线部分具有传播常数和在表示传播常数与工作频率之间的关系的色散曲线中设定的工作频率，使得正向传播常数和反向传播常数具有非相互相位 特征彼此不同。 微波传输线通过级联连接第一和第二端口之间的至少一个不可逆传输线部分而构成。

公开(公告)号：US07432004B2

公开(公告)日：2008-10-07

申请号：US10130468

申请日：2001-06-12

申请人： Tetsuya Ueda ,  Takeshi Tomizawa ,  Kunihiro Ukai

发明人： Tetsuya Ueda ,  Takeshi Tomizawa ,  Kunihiro Ukai

IPC分类号： H01M8/04

CPC分类号： H01M8/04231 ,  H01M8/04022 ,  H01M8/04223 ,  H01M8/04303 ,  H01M8/0612 ,  H01M8/0668 ,  H01M8/0675

摘要： A fuel cell electric power generating system is provided which does not occupy a large space, which requires a lower initial cost for equipment than the prior art, and of which the running cost is low. The system includes a reformer producing hydrogen-rich gas by utilizing a source gas, source gas supplying means of supplying the source gas to the reformer, air supplying means of supplying purging air to the reformer, and a fuel cell generating electric power by utilizing the hydrogen-rich gas produced at the reformer and air for electric power generation supplied from outside, wherein in stopping the operation of the fuel cell, the supply of the source gas to the reformer is stopped and the hydrogen-rich gas remaining within the fuel cell electric power generating system, steam and the purging air are passed in this order.

摘要翻译： 提供了不占用大空间的燃料电池发电系统，这需要比现有技术更低的设备初始成本，并且运行成本低。 该系统包括通过利用源气体产生富氢气体的重整器，向重整器供应源气体的源气供给装置，向重整器供给净化空气的空气供给装置以及利用 在重整器中产生的富氢气体和从外部供给的用于发电的空气，其中在停止燃料电池的运行时，停止向重整器供应源气体，并且残留在燃料电池内的富氢气体 发电系统，蒸汽和净化空气按顺序通过。

公开(公告)号：US20080158775A1

公开(公告)日：2008-07-03

申请号：US12071742

申请日：2008-02-26

申请人： Satoshi Seo ,  Tetsuya Ueda ,  Makoto Tsutsue

发明人： Satoshi Seo ,  Tetsuya Ueda ,  Makoto Tsutsue

IPC分类号： H01G4/228 ,  H01L21/20

CPC分类号： H01L28/60 ,  H01L21/76838 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a MIM capacitor including a first insulating film formed on a semiconductor substrate, a lower electrode composed of a first metal film formed on the first insulating film, a capacitor insulating film formed on the lower electrode, and an upper electrode composed of a second metal film formed on the capacitor insulating film. The semiconductor device further has a lower interconnect composed of the first metal film formed on the first insulating film and an upper interconnect composed of the second metal film formed on the lower interconnect. The upper interconnect and the upper electrode are formed integrally.

摘要翻译： 半导体器件具有MIM电容器，其包括形成在半导体衬底上的第一绝缘膜，由形成在第一绝缘膜上的第一金属膜构成的下电极，形成在下电极上的电容器绝缘膜，以及由 形成在电容器绝缘膜上的第二金属膜。 半导体器件还具有由形成在第一绝缘膜上的第一金属膜和由形成在下互连上的第二金属膜构成的上互连构成的下互连。 上部互连和上部电极一体形成。

公开(公告)号：US06858549B2

公开(公告)日：2005-02-22

申请号：US10328178

申请日：2002-12-26

申请人： Masashi Hamanaka ,  Takeshi Harada ,  Hideaki Yoshida ,  Tetsuya Ueda

发明人： Masashi Hamanaka ,  Takeshi Harada ,  Hideaki Yoshida ,  Tetsuya Ueda

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76832 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/7684 ,  Y10S438/906

摘要： After a plurality of grooves are formed in an insulating film and in an antireflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled. Subsequently, the portions of the conductive film outside the grooves are removed by a first polishing step and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, foreign matter adhered to the surface of the anti-reflection film is removed and a third polishing step is conducted on the surface of the anti-reflection film using an abrasive agent of the same type as used in the first polishing step of the conductive film.

摘要翻译： 在绝缘膜和绝缘膜上的防反射膜中形成多个沟槽之后，在抗反射膜上沉积阻挡金属膜和导电膜，使得每个沟槽被填充。 随后，通过第一抛光步骤去除沟槽外部的导电膜的部分，然后通过抛光去除凹槽外部的阻挡金属膜的部分。 此后，去除附着在防反射膜表面上的异物，并且使用与导电的第一抛光步骤中使用的相同类型的研磨剂在抗反射膜的表面上进行第三抛光步骤 电影。

公开(公告)号：US06455436B1

公开(公告)日：2002-09-24

申请号：US09479243

申请日：2000-01-07

申请人： Tetsuya Ueda ,  Eiji Tamaoka ,  Nobuo Aoi

发明人： Tetsuya Ueda ,  Eiji Tamaoka ,  Nobuo Aoi

IPC分类号： H01L21302

CPC分类号： H01L21/76897 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76811 ,  H01L21/76837 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： After successively depositing a first metal film and a first silicon oxide film on an insulating film formed on a semiconductor substrate, etching is carried out by using a first resist pattern as a mask, so as to form a first interlayer insulating film having openings from the first silicon oxide film and first metal interconnects from the first metal film. A third interlayer insulating film of an organic film is filled in the openings of the first interlayer insulating film, and the first interlayer insulating film is etched by using a hard mask. A second metal film is then filled in a space in the second interlayer insulating film, so as to form second metal interconnects.

摘要翻译： 在形成在半导体衬底上的绝缘膜上依次沉积第一金属膜和第一氧化硅膜之后，通过使用第一抗蚀剂图案作为掩模进行蚀刻，从而形成具有开口的第一层间绝缘膜 第一氧化硅膜和第一金属互连从第一金属膜。 在第一层间绝缘膜的开口部填充有机膜的第三层间绝缘膜，使用硬掩模对第一层间绝缘膜进行蚀刻。 然后将第二金属膜填充在第二层间绝缘膜的空间中，以形成第二金属互连。

公开(公告)号：US06232237B1

公开(公告)日：2001-05-15

申请号：US09206982

申请日：1998-12-08

申请人： Eiji Tamaoka ,  Nobuo Aoi ,  Tetsuya Ueda

发明人： Eiji Tamaoka ,  Nobuo Aoi ,  Tetsuya Ueda

IPC分类号： H01L214763

CPC分类号： H01L21/02063 ,  G03F7/427 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76814

摘要： A method for fabricating a semiconductor device according to the present invention includes the steps of: a) forming an insulator film having Si—H bonds; b) forming a resist mask over a selected region of the insulator film; c) etching part of the insulator film that is not covered with the resist mask, thereby forming a recess in the insulator film; and d) removing the resist mask. The step d) includes the step of e) ashing the resist mask by using plasma produced from a gas comprising water vapor as a main component.

摘要翻译： 根据本发明的制造半导体器件的方法包括以下步骤：a）形成具有Si-H键的绝缘膜; b）在所述绝缘膜的选定区域上形成抗蚀剂掩模; c）蚀刻未被抗蚀剂掩模覆盖的绝缘体膜的一部分，从而在绝缘膜中形成凹部; 和d）去除抗蚀剂掩模。 步骤d）包括以下步骤：e）通过使用由包含水蒸汽作为主要成分的气体产生的等离子体来蚀刻抗蚀剂掩模。

公开(公告)号：US6071755A

公开(公告)日：2000-06-06

申请号：US360484

申请日：1999-07-23

申请人： Shinji Baba ,  Jun Shibata ,  Tetsuya Ueda

发明人： Shinji Baba ,  Jun Shibata ,  Tetsuya Ueda

IPC分类号： H01L21/60 ,  H01L21/56 ,  H01L21/68 ,  H01L23/12 ,  H01L23/31 ,  H01L23/433 ,  H01L23/498 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L23/3128 ,  H01L23/4334 ,  H01L23/49816 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/11003 ,  H01L2224/1147 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/351

摘要： A semiconductor device includes an encapsulating resin encapsulating a semiconductor substrate, a lead pattern or a laminated wiring layers transferred or secured on the lower surface of the encapsulating resin and a plurality of external electrode disposed on the lower surface of the lead pattern. The device may be manufactured by bonding a semiconductor substrate to a transferring substrate on which a lead pattern is formed, resin encapsulating an upper portion of the transferring substrate to cover the semiconductor substrate, and removing only the transferring substrate with the lead pattern left bonded to the encapsulating resin and the semiconductor substrate.

摘要翻译： 半导体器件包括封装半导体衬底的封装树脂，引线图案或被转移或固定在封装树脂的下表面上的层叠布线层和设置在引线图案的下表面上的多个外部电极。 该器件可以通过将半导体衬底粘合到其上形成引线图案的转印衬底上，将封装转印衬底的上部的树脂覆盖半导体衬底，并且仅将转印衬底除去，并将引线图案留下 封装树脂和半导体衬底。

公开(公告)号：US5962920A

公开(公告)日：1999-10-05

申请号：US889833

申请日：1997-07-08

申请人： Satoshi Ueda ,  Tetsuya Ueda ,  Shuichi Mayumi

发明人： Satoshi Ueda ,  Tetsuya Ueda ,  Shuichi Mayumi

IPC分类号： H01L23/522 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/31 ,  H01L23/58

CPC分类号： H01L23/3171 ,  H01L2924/0002

摘要： A metal wire and a metal electrode which are composed of an aluminum alloy are formed on an interlayer insulating film composed of a silicon oxide film which is formed on the semiconductor substrate. On the entire surface of the metal wire and the metal electrode, a silicon oxide film and a silicon nitride film are formed serially, so as to compose a passivation film. A silicon nitrided-oxide layer is formed by nitriding a silicon oxide film in an area of the silicon oxide film which is the vicinity of the junction of either the metal wire or the metal electrode and the interlayer insulating film.

摘要翻译： 在由形成在半导体基板上的氧化硅膜构成的层间绝缘膜上形成由铝合金构成的金属线和金属电极。 在金属线和金属电极的整个表面上，串联地形成氧化硅膜和氮化硅膜，从而构成钝化膜。 通过在金属线或金属电极与层间绝缘膜的接合点附近的氧化硅膜的区域中氮化氧化硅膜而形成硅氮化氧化物层。

公开(公告)号：US5701033A

公开(公告)日：1997-12-23

申请号：US593965

申请日：1996-01-30

申请人： Tetsuya Ueda ,  Jun Shibata ,  Yomiyuki Yama

发明人： Tetsuya Ueda ,  Jun Shibata ,  Yomiyuki Yama

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/057 ,  H01L23/13 ,  H01L23/64 ,  H01L23/12 ,  H01L23/28 ,  H01L23/34

CPC分类号： H01L23/057 ,  H01L23/13 ,  H01L23/642 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49109 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/19041 ,  Y10S257/924

摘要： A semiconductor device comprising a substrate having a hollow cavity for mounting a semiconductor element therein and a lowered step surface at a periphery of the cavity for mounting a chip component thereon. A semiconductor element is mounted within the cavity and a chip capacitor is mounted to the lowered step surface. The semiconductor element and the chip component are adapted to be connected to an external circuit through electrical conductors. A cap is attached to the substrate and a seal material is filled into a space defined between the cap and the substrate for sealing the cavity and for encapsulating the chip component on the lowered step surface which may extend along the entire periphery of the cavity. The cap may include a projection adapted to abut gainst a side wall of the lowered step surface, or alternatively, the lowered step surface may include a side wall having a projection adapted to abut against periphery of the cap. The semiconductor device may further comprise a heat sink attached to the semiconductor element.

摘要翻译： 一种半导体器件，包括具有用于将半导体元件安装在其中的中空腔的衬底和用于在其上安装芯片部件的空腔周围的降低的台阶表面。 半导体元件安装在空腔内，并且片状电容器安装到降低的台阶表面。 半导体元件和芯片部件适于通过电导体连接到外部电路。 盖子连接到基板上，并且将密封材料填充到限定在盖和基板之间的空间中，用于密封空腔并将芯片部件封装在可沿着空腔的整个周边延伸的降低的台阶表面上。 帽可以包括适于抵靠降低的台阶表面的侧壁的突起，或者替代地，降低的台阶表面可以包括具有适于抵靠盖的周边的突起的侧壁。 半导体器件还可以包括附接到半导体元件的散热器。