公开(公告)号：US07829376B1

公开(公告)日：2010-11-09

申请号：US12755499

申请日：2010-04-07

申请人： Bunmi T. Adekore ,  Jonathan M. Pierce ,  Robert F. Davis

发明人： Bunmi T. Adekore ,  Jonathan M. Pierce ,  Robert F. Davis

IPC分类号： H01L21/00

CPC分类号： H01L21/02565 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02623

摘要： A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.

公开(公告)号：US20090194848A1

公开(公告)日：2009-08-06

申请号：US12298332

申请日：2007-04-24

申请人： Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

发明人： Tomoki Uemura ,  Takashi Sakurada ,  shinsuke Fujiwara ,  Takuji Okahisa ,  Koji Uematsu ,  Hideaki Nakahata

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02623 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： There is provided a method for fabricating a gallium nitride crystal with low dislocation density, high crystallinity, and resistance to cracking during polishing of sliced pieces by growing the gallium nitride crystal using a gallium nitride substrate including dislocation-concentrated regions or inverted-polarity regions as a seed crystal substrate. Growing a gallium nitride crystal 79 at a growth temperature higher than 1,100° C. and equal to or lower than 1,300° C. so as to bury dislocation-concentrated regions or inverted-polarity regions 17a reduces dislocations inherited from the dislocation-concentrated regions or inverted regions 17a, thus preventing new dislocations from occurring over the dislocation-concentrated regions or inverted-polarity regions 17a. This also increases the crystallinity of the gallium nitride crystal 79 and its resistance to cracking during the polishing.

摘要翻译： 提供了通过使用包括位错集中区域或反极性区域的氮化镓衬底生长氮化镓晶体来制造在切片的研磨期间具有低位错密度，高结晶度和耐龟裂性的氮化镓晶体的方法， 晶种基片。 在高于1100℃并且等于或低于1300℃的生长温度下生长氮化镓晶体79，以便掩埋位错集中区域或反极性区域17a减少从位错集中区域遗留的位错或 反转区域17a，从而防止在位错集中区域或反极性区域17a上发生新的位错。 这也增加了氮化镓晶体79的结晶度及其在抛光过程中的抗开裂性。

公开(公告)号：US20080090328A1

公开(公告)日：2008-04-17

申请号：US11984942

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/10

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US20040155255A1

公开(公告)日：2004-08-12

申请号：US10472446

申请日：2004-03-31

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L021/00 ,  H01L033/00 ,  C30B001/00 ,  H01L021/36

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US20230366857A1

公开(公告)日：2023-11-16

申请号：US18354786

申请日：2023-07-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jun-Hao Deng ,  Kuan-Wen Lin ,  Sheng-Chi Chin ,  Yu-Ching Lee

IPC分类号： G01N29/44 ,  H01L21/288 ,  H01L21/02 ,  G01B21/16 ,  G01B17/00 ,  B08B3/04 ,  G01B17/02 ,  H01L21/66 ,  B08B13/00 ,  B08B5/02 ,  H01L21/67

CPC分类号： G01N29/44 ,  H01L21/288 ,  H01L21/02623 ,  G01B21/16 ,  G01B17/00 ,  B08B3/04 ,  H01L21/02041 ,  G01B17/025 ,  H01L21/02282 ,  H01L22/10 ,  B08B13/00 ,  B08B5/02 ,  G01B17/02 ,  H01L21/67253 ,  G01N2291/044

摘要： Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

公开(公告)号：US11758742B2

公开(公告)日：2023-09-12

申请号：US16352521

申请日：2019-03-13

申请人： OXFORD PHOTOVOLTAICS LIMITED

发明人： Terence Alan Reid ,  Henry James Snaith

IPC分类号： H10K30/15 ,  H10K39/10 ,  H10K71/16 ,  H10K30/30 ,  H10K30/80 ,  H10K71/20 ,  H10K85/00 ,  H01G9/20 ,  H10K30/00 ,  H01L21/02 ,  H01L21/283 ,  H01L21/285

CPC分类号： H10K30/151 ,  H01G9/204 ,  H01G9/2027 ,  H01G9/2031 ,  H10K30/152 ,  H10K30/30 ,  H10K30/80 ,  H10K39/10 ,  H10K71/166 ,  H10K71/20 ,  H10K71/231 ,  H10K85/00 ,  H01L21/0226 ,  H01L21/02205 ,  H01L21/02282 ,  H01L21/02518 ,  H01L21/02623 ,  H01L21/283 ,  H01L21/28568 ,  H10K30/00 ,  Y02E10/549 ,  Y02P70/50

摘要： A photovoltaic device comprises plural layers separated into plural cells, each comprising a region of a photoactive layer and electrodes on opposite sides thereof. Each of the regions of the photoactive layer are formed comprising a first part that comprises photoactive material and a second part that is not photoactive and that has a greater transmittance of visible light than the light absorbing photoactive material, in pre-selected locations, or in a pre-selected distribution of locations, across the region of the photoactive layer. One of the first and second parts are located in plural separate areas within the other of the first and second parts. The transparency of the photovoltaic device is increased by the transmission of light through the second part that is not photoactive.

公开(公告)号：US11699600B2

公开(公告)日：2023-07-11

申请号：US17522067

申请日：2021-11-09

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  National University Corporation Kyoto Institute of Technology

发明人： Tatsuji Nagaoka ,  Hiroki Miyake ,  Hiroyuki Nishinaka ,  Yuki Kajita ,  Masahiro Yoshimoto

IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/67023 ,  H01L21/02623 ,  H01L21/30604

摘要： A wafer processing apparatus is configured to process a wafer by supplying mist to a surface of the wafer. The wafer processing apparatus includes a furnace in which the wafer is disposed, a gas supplying device configured to supply gas into the furnace, a mist supplying device configured to supply the mist into the furnace, and a controller. The controller is configured to execute a processing step by controlling the gas supplying device and the mist supplying device to supply the gas and the mist into the furnace, respectively. The controller is further configured to control the mist supplying device to stop supplying the mist into the furnace while controlling the gas supplying device to keep supplying the gas into the furnace when the processing step ends.

公开(公告)号：US20180330955A1

公开(公告)日：2018-11-15

申请号：US15991003

申请日：2018-05-29

申请人： International Business Machines Corporation

发明人： Amy N. Bowers ,  Luisa D. Bozano ,  Andrea Fasoli ,  Krystelle Lionti ,  Elizabeth M. Lofano ,  Robert D. Miller ,  Linda K. Sundberg

IPC分类号： H01L21/30 ,  H01L21/02 ,  C03C17/25 ,  H01L31/046 ,  B01F1/00

CPC分类号： H01L21/30 ,  B01F2001/0044 ,  C03C17/253 ,  C03C2217/211 ,  C03C2217/231 ,  C03C2217/425 ,  C03C2218/113 ,  C03C2218/116 ,  H01L21/02203 ,  H01L21/02255 ,  H01L21/02282 ,  H01L21/02623 ,  H01L31/046

摘要： Initial film layers prepared from tin(II) chloride spontaneously generate open cavities when the initial film layers are thermally cured to about 400° C. using a temperature ramp of 1° C./minute to 10° C./minute while exposed to air. The openings of the bowl-shaped cavities have characteristic dimensions whose lengths are in a range of 30 nm to 300 nm in the plane of the top surfaces of the cured film layers. The cured film layers comprise tin oxide and have utility in gas sensors, electrodes, photocells, and solar cells.

公开(公告)号：US20180327618A1

公开(公告)日：2018-11-15

申请号：US15746775

申请日：2016-07-22

申请人： The University of Manchester

发明人： Daryl McManus

IPC分类号： C09D11/30 ,  H01L31/0224 ,  H01L31/112 ,  H01L29/45 ,  H01L31/032 ,  H01L31/103 ,  H01L29/24 ,  H01L21/02 ,  H01L21/4763 ,  B41M5/00

CPC分类号： C09D11/30 ,  B41M5/0023 ,  C01B21/0648 ,  C01P2004/24 ,  H01L21/02568 ,  H01L21/02623 ,  H01L21/4763 ,  H01L29/24 ,  H01L29/45 ,  H01L31/022408 ,  H01L31/032 ,  H01L31/103 ,  H01L31/112 ,  H01L51/0005 ,  H01L51/0045 ,  H01L51/441

摘要： The present invention relates to an ink formulation comprising two-dimensional inorganic layered particles. The ink formulations of the present invention are for inkjet printing. The present invention also relates to a process for the preparation of these ink formulations, to the use of these ink formulations for the production of printed films and tracks comprising the inorganic material, to the films or tracks produced by the inkjet printing of these ink formulations, to devices that comprise these films or tracks, and to systems comprising an array of these devices.

公开(公告)号：US09812330B2

公开(公告)日：2017-11-07

申请号：US14900821

申请日：2014-04-28

申请人： Evonik Degussa GmbH

发明人： Juergen Steiger ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： C07F5/00 ,  H01L21/288 ,  C23C18/12 ,  C23C18/14 ,  C23C16/46 ,  C23C16/48 ,  H01L21/02 ,  C23C16/40

CPC分类号： H01L21/288 ,  C07F5/00 ,  C23C16/407 ,  C23C16/46 ,  C23C16/48 ,  C23C18/1216 ,  C23C18/14 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02664

摘要： The present invention relates to liquid formulations which can be produced by dissolving at least one indium alkoxide compound which can be prepared by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R′2NH where R′=alkyl in a molar ratio of from 8:1 to 20:1 to the indium trihalide in the presence of an alcohol of the generic formula ROH where R=alkyl in at least one solvent, a process for producing them, their use for producing indium oxide-containing or (semi)conducting layers and processes for producing indium oxide-containing layers which use the formulation of the invention.