公开(公告)号：US20110108081A1

公开(公告)日：2011-05-12

申请号：US11958487

申请日：2007-12-18

申请人： Jan-Gustav Werthen ,  Qiang Liu

发明人： Jan-Gustav Werthen ,  Qiang Liu

IPC分类号： H01L31/05 ,  H01L31/0248

CPC分类号： H01L31/0693 ,  H01L31/0475 ,  Y02E10/544

摘要： The invention provides a photovoltaic power converter that includes a multilayer structure supported by a substrate having a base layer of a semiconductor material of a first conductivity type and a first emitter layer of a semiconductor material of a second conductivity type opposite said first conductivity type forming a p-n junction region therebetween, and a first current blocking layer of a semiconductor material of the second conductivity type interposed between the substrate and the first multilayer structure. The emitter layer is carbon doped.

摘要翻译： 本发明提供了一种光伏功率转换器，其包括由基板支撑的多层结构，所述基板具有第一导电类型的半导体材料的基极层和与所述第一导电类型相反的第二导电类型的半导体材料的第一发射极层形成 pn结区域，以及插入在基板和第一多层结构之间的第二导电类型的半导体材料的第一电流阻挡层。 发射极层是碳掺杂的。

公开(公告)号：US20100279456A1

公开(公告)日：2010-11-04

申请号：US12232294

申请日：2008-09-15

申请人： Tatsuya Takamoto ,  Takaaki Agui

发明人： Tatsuya Takamoto ,  Takaaki Agui

IPC分类号： H01L31/0248

CPC分类号： H01L31/1892 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/078 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.

摘要翻译： 在GaAs衬底的表面上，通过外延生长形成作为顶部电池的层。 在顶部单元上，形成作为底部单元的层。 此后，在底部电池的表面上形成背面电极。 此后，通过蜡将玻璃板粘附到背面电极。 然后，将由玻璃板支撑的GaAs衬底浸入碱溶液中，从而去除GaAs衬底。 此后，在顶部电池上形成表面电极。 最后，玻璃板与背面电极分离。 以这种方式，可以获得提高转换成电能的效率的复合太阳能电池。

公开(公告)号：US20100239647A1

公开(公告)日：2010-09-23

申请号：US12406249

申请日：2009-03-18

申请人： Robert John BYRNE ,  Fernando Benito Lopez ,  Dermot Diamond

发明人： Robert John BYRNE ,  Fernando Benito Lopez ,  Dermot Diamond

IPC分类号： A61K9/70 ,  H01G9/022 ,  H01L31/0248 ,  B01L3/00 ,  B32B27/12

CPC分类号： B32B27/08 ,  A61K9/0009 ,  A61K9/703 ,  A61K38/28 ,  B01L3/502738 ,  B01L2400/0677 ,  B32B3/266 ,  B32B7/14 ,  B32B27/30 ,  H01G9/2013 ,  Y10T442/20

摘要： A photoresponsive ionogel comprising a photo-responsive polymer polymerised within an ionic liquid matrix is described. This solid-state electrolyte material maintains its ionic liquid characteristics but these characteristics can be altered upon irradiation of the gel with light of a particular wavelength. By suitably configuring the ionogel through the incorporation of specific ions within the gel it is possible to cause dramatic changes in properties of the ionogel such as viscosity, conductivity, acidity, basicity and polarity using light as the stimulus.

摘要翻译： 描述了包含在离子液体基质内聚合的光响应聚合物的光响应性离子凝胶。 这种固态电解质材料保持其离子液体特性，但是在用特定波长的光照射凝胶时可以改变这些特性。 通过将凝胶中的特定离子结合适当地配置离子凝胶，可以使用光作为刺激，引起离子凝胶的性质的显着变化，例如粘度，电导率，酸度，碱度和极性。

公开(公告)号：US20090301564A1

公开(公告)日：2009-12-10

申请号：US12213001

申请日：2008-06-12

申请人： Sungjee Kim ,  Moungi G. Bawendi

发明人： Sungjee Kim ,  Moungi G. Bawendi

IPC分类号： H01L31/0296 ,  H01L33/00 ,  H01L31/0304 ,  H01L31/0272 ,  H01L31/032 ,  H01L31/0248

CPC分类号： G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

摘要： A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

摘要翻译： 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US20090227095A1

公开(公告)日：2009-09-10

申请号：US12397646

申请日：2009-03-04

申请人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan

发明人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan

IPC分类号： H01L21/266 ,  H01L21/268 ,  H01L31/0248

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.

摘要翻译： 公开了一种太阳能电池，特别是IBC太阳能电池的反掺杂方法。 太阳能电池的一个表面可能需要部分被n掺杂，而其它部分是p掺杂的。 传统上，需要多个光刻和掺杂步骤来实现这种期望的配置。 相比之下，可以通过使用一种导电性的覆盖掺杂和具有相反电导率的掩模图案化反向掺杂工艺来消除一个光刻步骤。 在掩模图案化掺杂期间计量的面积接收足够的剂量，以完全反转覆盖掺杂的效果，并获得与覆盖掺杂相反的电导率。 在另一个实施例中，通过直接图案化技术执行反掺杂，从而消除了剩余的光刻步骤。 公开了各种直接反打法的方法。

公开(公告)号：US20090174928A1

公开(公告)日：2009-07-09

申请号：US12326739

申请日：2008-12-02

申请人： Kyu-Young KIM ,  Nam-Seok Roh ,  Ho-Yong Jung

发明人： Kyu-Young KIM ,  Nam-Seok Roh ,  Ho-Yong Jung

IPC分类号： G02F1/167 ,  H01L31/0248 ,  H01L21/02

CPC分类号： G02F1/167 ,  G02F1/13454 ,  G02F2001/13324 ,  H01L27/12

摘要： A display substrate, an electrophoretic display (EPD) device including the same, and a method for manufacturing the same are disclosed. The display substrate includes a display region and a non-display region. The display region includes a plurality of gate lines, a plurality of data lines, and a plurality of thin film transistors (TFTs) and a plurality of pixel electrodes disposed at crossings of the gate lines and the data lines. The non-display region is located at a peripheral region of the display region and includes a solar battery. The solar battery includes at least one semiconductor layer arranged between a lower electrode and an upper electrode that oppose each other.

摘要翻译： 公开了一种显示基板，包括该显示基板的电泳显示器（EPD）装置及其制造方法。 显示基板包括显示区域和非显示区域。 显示区域包括多个栅极线，多个数据线，以及多个薄膜晶体管（TFT）和设置在栅极线和数据线的交叉处的多个像素电极。 非显示区域位于显示区域的周边区域，并且包括太阳能电池。 太阳能电池包括布置在彼此相对的下电极和上电极之间的至少一个半导体层。

公开(公告)号：US20090140368A1

公开(公告)日：2009-06-04

申请号：US12292165

申请日：2008-11-13

申请人： Noriyuki Miura

发明人： Noriyuki Miura

IPC分类号： H01L31/0248 ,  H01L21/22

CPC分类号： H01L27/1443 ,  H01L31/105

摘要： A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level.

摘要翻译： 光电二极管包括形成在绝缘层上的硅半导体层中的感光元件。 感光元件包括低浓度扩散层，P型高浓度扩散层和N型高浓度扩散层。 制造光电二极管的方法包括以下步骤：在P型杂质和N型杂质注入低浓度扩散层之后，在硅半导体层上形成绝缘材料层，P型高浓度扩散层 ，和N型高浓度扩散层; 在用于形成低浓度扩散层的区域中在绝缘材料层中形成开口部分; 并且在用于形成低浓度扩散层的区域中蚀刻硅半导体层，使得硅半导体层的厚度降低到特定的水平。

公开(公告)号：US20080084901A1

公开(公告)日：2008-04-10

申请号：US11982568

申请日：2007-11-02

申请人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

发明人： Tetsuya Inui ,  Junichiro Nakayama ,  Yoshihiro Taniguchi ,  Masanori Seki ,  Hiroshi Tsunasawa ,  Ikumi Kashiwagi

IPC分类号： H01S3/10 ,  H01L31/0248

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/6675 ,  H01L29/78672 ,  H01L29/78696

摘要： A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

摘要翻译： 第一激光束以高重复频率以脉冲方式从第一激光振荡器发射，并且通过第一中间光学系统2会聚到基板上，以形成狭缝状的第一光束点。 第二激光束以脉冲方式从第二激光束振荡器发射，以在第一激光束之前先进并落下，并且通过第二中间光学系统会聚到衬底上，以形成与第二激光束相似的第二光束点 配置到第一束斑并且包含第一束斑。 在基板或第一，第二光束点移动的同时进行半导体薄膜在基板上的结晶。 由此，整个半导体薄膜形成为在一个方向上生长并且没有脊的晶体表面。 因此，半导体薄膜具有非常平坦的表面，极少的缺陷，大的晶粒和高的通量。

公开(公告)号：US06956251B2

公开(公告)日：2005-10-18

申请号：US11040751

申请日：2005-01-20

申请人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

发明人： Koshi Ando ,  Tomoki Abe ,  Takao Nakamura

IPC分类号： H01L31/10 ,  G01J1/02 ,  H01L21/8238 ,  H01L31/00 ,  H01L31/0248 ,  H01L31/0256 ,  H01L31/0296 ,  H01L31/0328 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/072 ,  H01L31/105 ,  H01L31/107 ,  H01L31/18

CPC分类号： H01L31/0296 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/107

摘要： A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

摘要翻译： 蓝色紫外线p-GaAs衬底引脚Zn1-xMgxSySe1-y光电二极管，量子效率高，暗电流小，可靠性高，使用寿命长。 ZnMgSSe光电二极管具有金属p电极，p-GaAs单晶衬底，p（ZnSe / ZnTe）m超晶格（m：薄膜组的整数），可选地形成的p-ZnSe缓冲层， p-Zn1-xMgxSySe1-y层，i-Zn1-xMgxSySe1-y层，n-Zn1-xMgxSySe1-y层，n电极和任选提供的抗反射膜。 入射光到达i层而不通过ZnTe层。 由于入射光不被ZnTe层吸收，因此获得了高量子效率和高灵敏度。

公开(公告)号：US20050098844A1

公开(公告)日：2005-05-12

申请号：US10994980

申请日：2004-11-19

申请人： Peter Sandvik ,  Dale Brown ,  Stephen Arthur ,  Kevin Matocha ,  James Kretchmer

发明人： Peter Sandvik ,  Dale Brown ,  Stephen Arthur ,  Kevin Matocha ,  James Kretchmer

IPC分类号： G01J1/02 ,  H01J20060101 ,  H01L31/0232 ,  H01L31/0248 ,  H01L31/0304 ,  H01L31/0312 ,  H01L31/0352 ,  H01L31/06 ,  H01L31/062 ,  H01L31/107 ,  H01L31/113 ,  H01L31/115

CPC分类号： H01L31/02322 ,  H01L31/02161 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/035281 ,  H01L31/107 ,  H01L31/115

摘要： An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250 gravitational acceleration (G) and/or temperatures approach or exceed 150° C. Another aspect of the present invention is directed to an APD device fabricated using SiC materials. Another aspect of the present invention is directed to an APD device fabricated using GaN materials. According to an embodiment of the present invention, an avalanche photodiode for detecting ultraviolet photons comprises a substrate having a first dopant; a first layer having the first dopant, positioned on top of the substrate; a second layer having a second dopant, positioned on top of the first layer; a third layer having a second dopant, positioned on top of the second layer; a passivation layer for providing electrical passivation on a surface of the avalanche photodiode; a phosphorous silicate glass layer for limiting mobile ion transport, positioned on top of the third layer; and a pair of metal electrodes for providing an ohmic contact wherein a first electrode is positioned below the substrate and a second electrode is positioned above the third layer; wherein the avalanche photodiode comprises a first sidewall and a second sidewall forming a sloped mesa shape; and wherein the avalanche photodiode operates in an environment comprising a temperature approximately equal to 150 degrees Celsius.

摘要翻译： 本发明的一个方面涉及一种雪崩光电二极管（APD）装置，用于在冲击水平接近250重力加速度（G）和/或温度接近或超过150°的恶劣的井下环境中的油井钻井应用 C.本发明的另一方面涉及使用SiC材料制造的APD器件。 本发明的另一方面涉及使用GaN材料制造的APD器件。 根据本发明的实施例，用于检测紫外光子的雪崩光电二极管包括具有第一掺杂剂的衬底; 具有第一掺杂剂的第一层，位于衬底的顶部; 具有位于所述第一层的顶部上的具有第二掺杂剂的第二层; 具有第二掺杂剂的第三层，位于所述第二层的顶部; 用于在雪崩光电二极管的表面上提供电钝化的钝化层; 用于限制移动离子迁移的磷硅酸盐玻璃层，位于第三层的顶部; 以及用于提供欧姆接触的一对金属电极，其中第一电极位于所述衬底下方，并且第二电极位于所述第三层之上; 其中所述雪崩光电二极管包括形成倾斜台面形状的第一侧壁和第二侧壁; 并且其中所述雪崩光电二极管在包括大约等于150摄氏度的温度的环境中操作。