公开(公告)号：US20170194527A1

公开(公告)日：2017-07-06

申请号：US15356152

申请日：2016-11-18

申请人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

发明人： NARSINGH B. SINGH ,  JOHN V. VELIADIS ,  BETTINA NECHAY ,  ANDRE BERGHMANS ,  DAVID J. KNUTESON ,  DAVID KAHLER ,  BRIAN WAGNER ,  MARC SHERWIN

IPC分类号： H01L31/107 ,  H01L31/18 ,  H01L31/0336 ,  H01L27/144 ,  H01L31/0232

CPC分类号： H01L31/1075 ,  H01L27/1443 ,  H01L27/1446 ,  H01L31/02327 ,  H01L31/0336 ,  H01L31/035227 ,  H01L31/18

摘要： An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

公开(公告)号：US09608028B2

公开(公告)日：2017-03-28

申请号：US14903700

申请日：2014-07-08

申请人： Rayence Co., Ltd. ,  Vatech Ewoo Holdings Co., Ltd.

发明人： Tae Woo Kim ,  Dong Jin Lee

IPC分类号： H01L27/146 ,  H01L31/0264 ,  H01L31/0296 ,  H01L31/0224 ,  H01L31/0336

CPC分类号： H01L27/14676 ,  H01L27/14601 ,  H01L27/14636 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14696 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0336

摘要： Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a front electrode made of aluminum, and which includes a first electrode composed of aluminum, copper or an aluminum-copper alloy on a substrate, a buffer layer formed on the first electrode, a photoconductive layer formed on the buffer layer, and a second electrode formed on the photoconductive layer, wherein the buffer layer includes a material having higher strength of adhesion than the photoconductive layer to the first electrode.

公开(公告)号：US20170062648A1

公开(公告)日：2017-03-02

申请号：US15137696

申请日：2016-04-25

申请人： Ascent Solar Technologies, Inc.

发明人： Lawrence M. Woods ,  Rosine M. Ribelin ,  Prem Nath

IPC分类号： H01L31/18 ,  H01L31/073 ,  H01L31/0336

CPC分类号： H01L31/18 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/385 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/046 ,  H01L31/0725 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1884 ,  Y02E10/543 ,  Y02P70/521

摘要： A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.

摘要翻译： 多结光伏电池包括在基板上形成的基板和背接触层。 在背面接触层上形成低带隙IB-IIIB-VIB2族材料太阳能吸收层。 异质结伙伴层形成在低带隙太阳能吸收层上，以帮助形成底部电池结，异质结伙伴层包括至少一层具有至少100欧姆 - 厘米电阻率的高电阻率材料层。 高电阻率材料具有式（Zn和/或Mg）（S，Se，O和/或OH）。 在异质结伙伴层之上形成导电互连层，并且在导电互连层上形成至少一个附加的单结光伏电池作为顶部电池。 顶部单元可以具有非晶硅或p型硒化镉太阳能吸收层。 硒化镉可以用氯化物掺杂工艺从n型转变成p型。

公开(公告)号：US09450121B2

公开(公告)日：2016-09-20

申请号：US14567067

申请日：2014-12-11

申请人： Sony Corporation

发明人： Koji Nagahiro

IPC分类号： H01L31/0336 ,  H01L27/146 ,  H01L31/032 ,  H01L31/09

CPC分类号： H01L31/0322 ,  H01L27/14632 ,  H01L27/14645 ,  H01L31/09 ,  Y02E10/541

摘要： A solid-state imaging device includes a photoelectric conversion device that includes a non-chalcopyrite-based compound semiconductor of at least one layer, which is lattice bonded or pseudo lattice bonded, and is formed on a silicon substrate, and a chalcopyrite-based compound semiconductor of at least one layer which is formed on the non-chalcopyrite-based compound semiconductor.

摘要翻译： 固态成像装置包括：光电转换装置，其包括至少一层的非黄铜矿型化合物半导体，该化合物半导体是晶格键合或伪晶格结合的，并且形成在硅衬底上，以及基于黄铜矿的化合物 形成在非黄铜矿基化合物半导体上的至少一层的半导体。

公开(公告)号：US09385224B2

公开(公告)日：2016-07-05

申请号：US14458906

申请日：2014-08-13

申请人： Karen M. Renaldo ,  Eric J. Stewart ,  Robert S. Howell ,  Howell George Henry ,  Harlan Carl Cramer ,  Justin Andrew Parke ,  Matthew Russell King

发明人： Karen M. Renaldo ,  Eric J. Stewart ,  Robert S. Howell ,  Howell George Henry ,  Harlan Carl Cramer ,  Justin Andrew Parke ,  Matthew Russell King

IPC分类号： H01L29/76 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/778 ,  H01L21/02 ,  H01L21/76 ,  H01L29/06 ,  H01L21/302 ,  H01L29/66

CPC分类号： H01L29/155 ,  H01L21/0254 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/7605 ,  H01L21/76224 ,  H01L21/76877 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterostructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.

摘要翻译： 公开了一种集成电路，其包括具有在单通道器件区域中覆盖衬底结构的单个共享异质结构的第一部分的单通道器件，以及与单个共用异质结构的第一部分接触的栅极接触。 集成电路还包括多通道器件，其包括覆盖多通道器件区域中的衬底结构的单个共享异质结构的第二部分，覆盖在单个共用异质结构的第二部分上的阻挡层，以及覆盖在阻挡层上的超晶格结构， 超晶格结构包括多个异质结构。 单个共享异质结构中的隔离区域将单通道器件与多通道器件隔离。

公开(公告)号：US09385199B2

公开(公告)日：2016-07-05

申请号：US14319490

申请日：2014-06-30

申请人： National Semiconductor Corporation

发明人： Jamal Ramdani

IPC分类号： H01L31/0336 ,  H01L29/225 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/225 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

摘要： A method includes forming a relaxed layer in a semiconductor device. The method also includes forming a tensile layer over the relaxed layer, where the tensile layer has tensile stress. The method further includes forming a compressive layer over the relaxed layer, where the compressive layer has compressive stress. The compressive layer has a piezoelectric polarization that is approximately equal to or greater than a spontaneous polarization in the relaxed, tensile, and compressive layers. The piezoelectric polarization in the compressive layer could be in an opposite direction than the spontaneous polarization in the compressive layer. The relaxed layer could include gallium nitride, the tensile layer could include aluminum gallium nitride, and the compressive layer could include aluminum indium gallium nitride.

摘要翻译： 一种方法包括在半导体器件中形成松弛层。 该方法还包括在松弛层上形成拉伸层，其中拉伸层具有拉伸应力。 该方法还包括在松弛层上形成压缩层，其中压缩层具有压应力。 压缩层具有大致等于或大于松弛，拉伸和压缩层中的自发极化的压电极化。 压缩层中的压电极化可能与压缩层中的自发极化方向相反。 松弛层可以包括氮化镓，拉伸层可以包括氮化镓铝，并且压缩层可以包括铝铟镓氮。

公开(公告)号：US09379271B2

公开(公告)日：2016-06-28

申请号：US14285964

申请日：2014-05-23

申请人： U.S. Army Research Laboratory

发明人： Paul Shen ,  Lee Ellen Rodak ,  Chad Stephen Gallinat ,  Anand Venktesh Sampath ,  Michael Wraback

IPC分类号： H01L31/107 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/0336 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/1075 ,  H01L31/022408 ,  H01L31/0296 ,  H01L31/03044 ,  H01L31/03046 ,  H01L31/0336 ,  H01L31/03529 ,  H01L31/18 ,  Y02E10/544 ,  Y02P70/521

摘要： A method of making and a photodetector comprising a substrate; a p-type or n-type layer; first and second region each having polarizations, a first interface therebetween, the magnitudes and directions of the first and second polarizations being such that a scalar projection of second polarization on the growth direction relative to the scalar projection of the first polarization projected onto the growth direction is sufficient to create a first interface charge; and a third region suitable for forming one of an n-metal or p-metal contact thereon having a third polarization, a second interface between the second and third regions, the third polarization having a scalar projection on the growth direction that, relative to scalar projection of the second polarization onto the growth direction, is sufficient to create a second interface charge; the first and second interface charges creating an electrostatic potential barrier to carriers defining a predetermined wavelength range.

摘要翻译： 一种制造方法和一种包括基底的光电探测器; p型或n型层; 每个具有偏振的第一和第二区域，其间的第一界面，所述第一和第二偏振的幅度和方向使得相对于投射到生长方向上的第一偏振的标量投影的生长方向上的第二偏振的标量投影 足以创建第一接口电荷; 以及第三区域，适于形成其上具有第三偏振的第一极化的第一极化，第二和第三区之间的第二界面之间的n金属或p金属接触之一，所述第三极化在生长方向上具有标量投影，相对于标量 将第二偏振投影到生长方向上足以产生第二界面电荷; 所述第一和第二界面电荷为限定预定波长范围的载流子产生静电势垒。

公开(公告)号：US09356167B2

公开(公告)日：2016-05-31

申请号：US14584732

申请日：2014-12-29

申请人： Seoul Viosys Co., Ltd.

发明人： Ki Yon Park ,  Hwa Mok Kim ,  Kyu Ho Lee ,  Sung Hyun Lee ,  Hyung Kyu Kim

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/11 ,  H01L31/108 ,  H01L31/18

CPC分类号： H01L31/03048 ,  H01L31/022408 ,  H01L31/03044 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1848 ,  H01L31/1852 ,  H01L31/1856 ,  Y02E10/544

摘要： An ultraviolet (UV) photo-detecting device, including: a first nitride layer; a secondary light absorption layer disposed on the first nitride layer; a primary light absorption layer disposed on the secondary light absorption layer; and a Schottky junction layer disposed on the primary light absorption layer. The secondary light absorption layer includes a nitride layer having lower band-gap energy than the primary light absorption layer.

摘要翻译： 一种紫外线（UV）光检测装置，包括：第一氮化物层; 设置在所述第一氮化物层上的次级光吸收层; 设置在次光吸收层上的初级光吸收层; 以及设置在初级光吸收层上的肖特基结层。 二次光吸收层包括具有比初级光吸收层低的带隙能量的氮化物层。

公开(公告)号：US09343551B2

公开(公告)日：2016-05-17

申请号：US14665869

申请日：2015-03-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Ching ,  Chih-Hao Wang ,  Zhiqiang Wu ,  Carlos H. Diaz ,  Jean-Pierre Colinge

IPC分类号： H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336 ,  H01L29/66 ,  H01L29/78 ,  H01L27/12 ,  H01L29/06 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762 ,  H01L29/165

CPC分类号： H01L29/7848 ,  H01L21/02107 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/02233 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/0262 ,  H01L21/28238 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7843 ,  H01L29/7846 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7856

摘要： Semiconductor devices and methods of manufacturing the same are disclosed. In some embodiments, a method of manufacturing a semiconductor device comprises forming a fin structure over a substrate. The fin structure may comprise a lower portion protruding from a major surface of the substrate, an upper portion, and a middle portion between the lower portion and the upper portion, wherein the lower portion and the middle portion differ in composition. The method may further include forming an isolation structure surrounding the fin structure and oxidizing the fin structure. The oxidizing may form a pair of notches extending from sidewalls of the fin structure into the middle portion of the fin structure.

摘要翻译： 公开了半导体器件及其制造方法。 在一些实施例中，制造半导体器件的方法包括在衬底上形成翅片结构。 翅片结构可以包括从基底的主表面突出的下部，上部和下部与上部之间的中间部分，其中下部和中间部分的组成不同。 该方法还可以包括形成围绕翅片结构并氧化翅片结构的隔离结构。 氧化可以形成从翅片结构的侧壁延伸到翅片结构的中间部分的一对凹口。

公开(公告)号：US09324908B2

公开(公告)日：2016-04-26

申请号：US14653703

申请日：2014-03-28

申请人： Sharp Kabushiki Kaisha

发明人： Masanori Watanabe ,  Satoshi Komada ,  Tomoya Inoue ,  Kosuke Kawabata

IPC分类号： H01L31/0328 ,  H01L27/15 ,  H01L31/0336 ,  H01L21/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/02 ,  H01L33/20 ,  H01L33/12

CPC分类号： H01L33/06 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.

摘要翻译： 本发明提供一种氮化物半导体发光元件，其依次包括第一n型氮化物半导体层，第二n型氮化物半导体层，n型电子注入层，发光层和p型 氮化物半导体层，其中第二n型氮化物半导体层的平均n型掺杂剂浓度为第一n型氮化物半导体层的平均n型掺杂剂浓度的0.53倍以下，平均n n型电子注入层的掺杂浓度为第二n型氮化物半导体层的平均n型掺杂剂浓度的1.5倍以上。