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公开(公告)号：US08674467B2
公开(公告)日：2014-03-18
申请号：US13545450
申请日：2012-07-10
IPC分类号： H01L27/146 , H01L31/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。
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42.发明申请公开(公告)号：US20130307103A1
公开(公告)日：2013-11-21
申请号：US13475301
申请日：2012-05-18
申请人： Jeng-Shyan Lin , Feng-Chi Hung , Dun-Nian Yaung , Jen-Cheng Liu , Szu-Ying Chen , Wen-De Wang , Tzu-Hsuan Hsu
发明人： Jeng-Shyan Lin , Feng-Chi Hung , Dun-Nian Yaung , Jen-Cheng Liu , Szu-Ying Chen , Wen-De Wang , Tzu-Hsuan Hsu
IPC分类号： H01L31/0232 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685 , H01L27/1469 , H01L2224/48463
摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.
摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。
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公开(公告)号：US08502389B2
公开(公告)日：2013-08-06
申请号：US13205157
申请日：2011-08-08
申请人： Cheng-Ying Ho , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shih Pei Chou
发明人： Cheng-Ying Ho , Dun-Nian Yaung , Jen-Cheng Liu , Jeng-Shyan Lin , Wen-De Wang , Shih Pei Chou
CPC分类号： H01L24/48 , H01L21/76898 , H01L24/05 , H01L24/45 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L2224/04042 , H01L2224/05009 , H01L2224/05017 , H01L2224/05027 , H01L2224/05093 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48624 , H01L2224/48724 , H01L2924/00014 , H01L2924/10253 , H01L2924/13091 , H01L2924/3025 , H01L2924/04941 , H01L2924/04953 , H01L2924/01029 , H01L2924/00 , H01L2224/05552
摘要： An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up into the semiconductor substrate. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate and the dielectric pad. An edge of the semiconductor substrate in the opening is vertically aligned to an edge of the dielectric pad in the opening. The opening stops on a top surface of the metal pad. A dielectric spacer is disposed in the opening, wherein the dielectric spacer is formed on the edge of the semiconductor substrate and the edge of the dielectric pad.
摘要翻译： 集成电路结构包括具有多个金属层的互连结构，其中互连结构位于半导体衬底之下。 金属垫形成在多个金属层中的一个中。 电介质垫从半导体衬底的底表面延伸到半导体衬底中。 开口从半导体衬底的顶表面向下延伸以穿透半导体衬底和介电垫。 开口中的半导体衬底的边缘与开口中的电介质垫的边缘垂直对准。 开口在金属垫的顶面停止。 电介质垫片设置在开口中，其中介电隔离件形成在半导体衬底的边缘和电介质垫的边缘上。
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44.发明申请BACKSIDE ILLUMINATION SENSOR HAVING A BONDING PAD STRUCTURE AND METHOD OF MAKING THE SAME 有权具有粘结垫结构的背面照明传感器及其制造方法公开(公告)号：US20130009270A1
公开(公告)日：2013-01-10
申请号：US13177686
申请日：2011-07-07
申请人： Shuang-Ji Tsai , Dun-Nian Yaung , Jeng-Shyan Lin , Jen-Cheng Liu , Wen-De Wang , Yueh-Chiou Lin
发明人： Shuang-Ji Tsai , Dun-Nian Yaung , Jeng-Shyan Lin , Jen-Cheng Liu , Wen-De Wang , Yueh-Chiou Lin
IPC分类号： H01L31/0224 , H01L31/18 , H01L23/485
CPC分类号： H01L24/05 , H01L21/76898 , H01L23/481 , H01L27/14623 , H01L27/14636 , H01L27/1464 , H01L2224/0345 , H01L2224/0362 , H01L2224/0401 , H01L2224/04042 , H01L2224/05022 , H01L2224/05096 , H01L2224/05548 , H01L2224/05555 , H01L2224/05567 , H01L2224/05568 , H01L2224/05572 , H01L2224/05624 , H01L2224/05647 , H01L2224/131 , H01L2224/45144 , H01L2224/48624 , H01L2224/48647 , H01L2924/01322 , H01L2924/12042 , H01L2924/12043 , H01L2924/15788 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2924/014 , H01L2924/00
摘要： The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure comprises a device substrate having a front side and a back side; an interconnect structure disposed on the front side of the device substrate; and a bonding pad connected to the interconnect structure. The bonding pad comprises a recessed region in a dielectric material layer; a dielectric mesa of the dielectric material layer interposed between the recessed region; and a metal layer disposed in the recessed region and on the dielectric mesa.
摘要翻译： 本公开提供了半导体结构的一个实施例。 半导体结构包括具有正面和背面的器件基板; 布置在所述器件基板的前侧的互连结构; 以及连接到互连结构的接合焊盘。 焊盘包括电介质材料层中的凹陷区域; 插入在凹陷区域之间的电介质材料层的电介质台面; 以及设置在凹陷区域和电介质台面上的金属层。
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公开(公告)号：US20120273914A1
公开(公告)日：2012-11-01
申请号：US13545450
申请日：2012-07-10
IPC分类号： H01L31/02
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： Provided is a method of fabricating an image sensor device. The method includes providing a device substrate having a front side and a back side. The method includes forming first and second radiation-sensing regions in the device substrate, the first and second radiation-sensing regions being separated by an isolation structure. The method also includes forming a transparent layer over the back side of the device substrate. The method further includes forming an opening in the transparent layer, the opening being aligned with the isolation structure. The method also includes filling the opening with an opaque material.
摘要翻译： 提供了一种制造图像传感器装置的方法。 该方法包括提供具有前侧和后侧的装置基板。 该方法包括在器件衬底中形成第一和第二辐射感测区域，第一和第二辐射感测区域由隔离结构隔开。 该方法还包括在器件衬底的背面上形成透明层。 该方法还包括在透明层中形成开口，该开口与隔离结构对准。 该方法还包括用不透明材料填充开口。
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公开(公告)号：US20120038020A1
公开(公告)日：2012-02-16
申请号：US12916789
申请日：2010-11-01
申请人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
发明人： Jeng-Shyan Lin , Dun-Nian Yaung , Jen-Cheng Liu , Hsin-Hui Lee , Wen-De Wang , Shu-Ting Tsai
IPC分类号： H01L23/528 , H01L21/768
CPC分类号： H01L23/585 , H01L21/02697 , H01L21/30604 , H01L21/31 , H01L21/31111 , H01L21/32051 , H01L21/6835 , H01L21/76 , H01L21/76816 , H01L21/76877 , H01L23/3171 , H01L23/3192 , H01L23/488 , H01L23/5226 , H01L23/528 , H01L23/562 , H01L23/564 , H01L24/03 , H01L24/05 , H01L24/06 , H01L27/14618 , H01L27/14636 , H01L27/1464 , H01L2221/68304 , H01L2221/68327 , H01L2221/6834 , H01L2221/68363 , H01L2224/02166 , H01L2224/03 , H01L2224/03002 , H01L2224/0345 , H01L2224/03452 , H01L2224/0361 , H01L2224/0362 , H01L2224/05025 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/05684 , H01L2224/0603 , H01L2224/06181 , H01L2924/01019 , H01L2924/01068 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A method includes providing a substrate having a seal ring region and a circuit region, forming a seal ring structure over the seal ring region, forming a first frontside passivation layer above the seal ring structure, etching a frontside aperture in the first frontside passivation layer adjacent to an exterior portion of the seal ring structure, forming a frontside metal pad in the frontside aperture to couple the frontside metal pad to the exterior portion of the seal ring structure, forming a first backside passivation layer below the seal ring structure, etching a backside aperture in the first backside passivation layer adjacent to the exterior portion of the seal ring structure, and forming a backside metal pad in the backside aperture to couple the backside metal pad to the exterior portion of the seal ring structure. Semiconductor devices fabricated by such a method are also provided.
摘要翻译： 一种方法包括提供具有密封环区域和电路区域的衬底，在密封环区域上形成密封环结构，在密封环结构上方形成第一前侧钝化层，在相邻的第一侧面钝化层中蚀刻前侧孔 到密封环结构的外部部分，在前侧孔中形成前侧金属垫，以将前侧金属垫连接到密封环结构的外部部分，在密封环结构下方形成第一背侧钝化层，蚀刻背面 邻近密封环结构的外部部分的第一背面钝化层中的孔，以及在背侧孔中形成背面金属垫，以将背面金属垫耦合到密封环结构的外部。 还提供了通过这种方法制造的半导体器件。
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公开(公告)号：US20100233871A1
公开(公告)日：2010-09-16
申请号：US12404852
申请日：2009-03-16
IPC分类号： H01L21/266
CPC分类号： H01L21/266 , H01L21/26513 , H01L29/66537
摘要： A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first hard mask layer over the substrate; patterning the first hard mask layer to form one or more first openings having a first critical dimension; performing a first implantation process on the substrate; forming a second hard mask layer over the first hard mask layer to form one or more second openings having a second critical dimension; and performing a second implantation process.
摘要翻译： 公开了一种用于制造集成电路器件的方法。 该方法包括提供基板; 在衬底上形成第一硬掩模层; 图案化第一硬掩模层以形成具有第一临界尺寸的一个或多个第一开口; 在所述基板上执行第一注入工艺; 在所述第一硬掩模层上形成第二硬掩模层以形成具有第二临界尺寸的一个或多个第二开口; 以及执行第二植入过程。
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公开(公告)号：US20070015305A1
公开(公告)日：2007-01-18
申请号：US11181189
申请日：2005-07-13
申请人： Jeng-Shyan Lin , Chien-Hsien Tseng , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung , Hung-Jen Hsu
发明人： Jeng-Shyan Lin , Chien-Hsien Tseng , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung , Hung-Jen Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/14627 , H01L27/14632
摘要： A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.
摘要翻译： 一种半导体器件，包括其中形成有光电传感器的半导体衬底; 覆盖衬底的第一层，第一层包括具有大致凹形形状的表面的部分，其为在其上形成的微透镜的负形状; 覆盖第一层的第二层，第二层包括垂直对准并与大致凹形的表面配合的大致凸形的部分，大体上凸形的部分被构造和布置以限定微透镜，定位成使得平行光通过 通过微透镜收敛并撞击光电传感器。
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公开(公告)号：US07145190B2
公开(公告)日：2006-12-05
申请号：US10918417
申请日：2004-08-16
IPC分类号： H01L27/148
CPC分类号： H01L31/103 , H01L27/1463 , H01L27/14672
摘要： A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.
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公开(公告)号：US20060270091A1
公开(公告)日：2006-11-30
申请号：US11488611
申请日：2006-07-19
IPC分类号： H01L21/00
CPC分类号： H01L31/103 , H01L27/1463 , H01L27/14672
摘要： A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.
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