Three-dimensional stacked semiconductor package
    46.
    发明授权
    Three-dimensional stacked semiconductor package 失效
    三维堆叠半导体封装

    公开(公告)号:US06765287B1

    公开(公告)日:2004-07-20

    申请号:US10307134

    申请日:2002-11-29

    Abstract: A three-dimensional stacked semiconductor package includes first and second semiconductor chip assemblies and a conductive bond. The first semiconductor chip assembly includes a first semiconductor chip and a first conductive trace with a first routing line and a first pillar. The second semiconductor chip assembly includes a second semiconductor chip and a second conductive trace with a second routing line and a second pillar. The chips are aligned with one another, and the pillars are disposed outside the peripheries of the chips and aligned with one another. The conductive bond contacts and electrically connects the pillars.

    Abstract translation: 三维堆叠半导体封装包括第一和第二半导体芯片组件和导电结合。 第一半导体芯片组件包括第一半导体芯片和具有第一布线线和第一支柱的第一导电迹线。 第二半导体芯片组件包括第二半导体芯片和具有第二布线线和第二支柱的第二导电迹线。 芯片彼此对准,并且支柱设置在芯片周边的外侧并彼此对准。 导电键接触并电连接支柱。

    Method of making a support circuit for a semiconductor chip assembly
    47.
    发明授权
    Method of making a support circuit for a semiconductor chip assembly 失效
    制造用于半导体芯片组件的支撑电路的方法

    公开(公告)号:US06436734B1

    公开(公告)日:2002-08-20

    申请号:US09878521

    申请日:2001-06-11

    Abstract: A method of manufacturing a support circuit includes providing a conductive layer with top and bottom surfaces,,providing a top etch mask on the top surface that includes an opening that exposes a portion of the top surface, providing a bottom etch mask on the bottom surface that includes an opening that exposes a portion of the bottom surface, applying an etch to the exposed portion of the top surface through the opening in the top etch mask, thereby etching partially but not completely through the conductive layer and forming a recessed portion in the conductive layer below the top surface, forming an insulative base on the recessed portion without forming the insulative base on the top surface, and applying an etch to the exposed portion of the bottom surface through the opening in the bottom etch mask, thereby forming a routing line in the recessed portion that extends to and is covered by the insulative base.

    Abstract translation: 一种制造支撑电路的方法包括提供具有顶表面和底表面的导电层,在顶表面上提供顶部蚀刻掩模,其包括露出顶表面的一部分的开口,在底表面上提供底蚀刻掩模 其包括露出底表面的一部分的开口,通过顶部蚀刻掩模中的开口对顶表面的暴露部分施加蚀刻,从而通过导电层部分蚀刻但不完全蚀刻,并在其中形成凹陷部分 导电层,在凹陷部分上形成绝缘基底,而不在顶表面上形成绝缘基底,并且通过底部蚀刻掩模中的开口对底表面的暴露部分施加蚀刻,从而形成布线 在凹进部分中延伸并被绝缘基底覆盖的线。

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