利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

61 条记录 (耗时 0.041 秒)

    BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LEAKAGE
    42.
    发明申请
    BACK SIDE ILLUMINATED IMAGE SENSOR WITH REDUCED SIDEWALL-INDUCED LEAKAGE 有权
    具有降低的侧壁感应泄漏的背面照明图像传感器

    公开(公告)号：US20120205769A1

    公开(公告)日：2012-08-16

    申请号：US13028471

    申请日：2011-02-16

    申请人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Hsiao-Hui Tseng

    发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Hsiao-Hui Tseng

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： H01L27/14687 ,  H01L23/481 ,  H01L23/525 ,  H01L24/83 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14689

    摘要： Provided is an image sensor device. The image sensor device includes having a front side, a back side, and a sidewall connecting the front and back sides. The image sensor device includes a plurality of radiation-sensing regions disposed in the substrate. Each of the radiation-sensing regions is operable to sense radiation projected toward the radiation-sensing region through the back side. The image sensor device includes an interconnect structure that is coupled to the front side of the substrate. The interconnect structure includes a plurality of interconnect layers and extends beyond the sidewall of the substrate. The image sensor device includes a bonding pad that is spaced apart from the sidewall of the substrate. The bonding pad is electrically coupled to one of the interconnect layers of the interconnect structure.

    摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有连接前侧和后侧的前侧，后侧和侧壁。 图像传感器装置包括设置在基板中的多个辐射感测区域。 每个辐射感测区域可操作以感测通过后侧朝向辐射感测区域投射的辐射。 图像传感器装置包括耦合到基板的前侧的互连结构。 互连结构包括多个互连层并且延伸超过衬底的侧壁。 图像传感器装置包括与衬底的侧壁间隔开的接合焊盘。 接合焊盘电连接到互连结构的互连层之一。

    Vertically Integrated Image Sensor Chips and Methods for Forming the Same
    43.
    发明申请
    Vertically Integrated Image Sensor Chips and Methods for Forming the Same 有权
    垂直集成的图像传感器芯片及其形成方法

    公开(公告)号：US20130307103A1

    公开(公告)日：2013-11-21

    申请号：US13475301

    申请日：2012-05-18

    申请人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    发明人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    IPC分类号： H01L31/0232 ,  H01L31/02

    CPC分类号： H01L27/14687 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/48463

    摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

    摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。

    Multiple seal ring structure
    50.
    发明授权
    Multiple seal ring structure 有权
    多重密封圈结构

    公开(公告)号：US08338917B2

    公开(公告)日：2012-12-25

    申请号：US12938272

    申请日：2010-11-02

    申请人： Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Shu-Ting Tsai

    发明人： Dun-Nian Yaung ,  Jen-Cheng Liu ,  Jeng-Shyan Lin ,  Wen-De Wang ,  Shu-Ting Tsai

    IPC分类号： H01L23/02 ,  H01L21/71

    CPC分类号： H01L21/78 ,  H01L23/3157 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/00

    摘要： The present disclosure provides a method of fabricating a semiconductor device, the method including providing a substrate having a seal ring region and a circuit region, forming a first seal ring structure over the seal ring region, forming a second seal ring structure over the seal ring region and adjacent to the first seal ring structure, and forming a first passivation layer disposed over the first and second seal ring structures. A semiconductor device fabricated by such a method is also provided.

    摘要翻译： 本公开提供一种制造半导体器件的方法，所述方法包括提供具有密封环区域和电路区域的衬底，在所述密封环区域上形成第一密封环结构，在所述密封环上形成第二密封环结构 并且邻近第一密封环结构，以及形成设置在第一和第二密封环结构上的第一钝化层。 还提供了通过这种方法制造的半导体器件。