公开(公告)号：US10037980B2

公开(公告)日：2018-07-31

申请号：US15632392

申请日：2017-06-26

Applicant: Industrial Technology Research Institute

Inventor： Yu-Wei Huang ,  Tao-Chih Chang ,  Chih-Ming Shen

IPC: H01L25/075 ,  H01L21/68 ,  H01L21/683 ,  H01L33/62 ,  H01L33/48 ,  H01L21/48 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L21/4853 ,  H01L21/68 ,  H01L21/6835 ,  H01L24/00 ,  H01L33/0079 ,  H01L33/483 ,  H01L33/62 ,  H01L2221/68363 ,  H01L2933/0066

Abstract: A fabricating method of a semiconductor light emitting device includes disposing a plurality of non-conductive walls on a substrate. An alignment position is formed between every two adjacent non-conductive walls. A plurality of semiconductor light emitting units on a first carrier board are respectively aligned to the alignment positions. The semiconductor light emitting units are divided into a plurality of groups. The semiconductor light emitting units in one of the groups are dissociated from the first carrier board. Thus, the semiconductor light emitting units in the group fall into the corresponding alignment positions due to gravity. Each of the semiconductor light emitting units is electrically connected with the substrate through a first electrode. A conductive layer is formed on the semiconductor light emitting units. Accordingly, the semiconductor light emitting units are electrically connected together to the conductive layer through second electrodes.

公开(公告)号：US20180019178A1

公开(公告)日：2018-01-18

申请号：US15647264

申请日：2017-07-12

Applicant: Industrial Technology Research Institute

Inventor： Yu-Min Lin ,  Kuo-Shu Kao ,  Jing-Yao Chang ,  Tao-Chih Chang

IPC: H01L23/367 ,  H01L23/13 ,  H01L23/31 ,  H01L23/373 ,  H05K3/00 ,  H05K3/32 ,  H05K1/18 ,  H01L23/00 ,  H05K1/02 ,  H01L25/065 ,  H05K1/11 ,  H01L21/56 ,  H01L25/10 ,  H01L23/538 ,  H01L23/492 ,  H01L21/48

CPC classification number: H01L23/367 ,  H01L21/4857 ,  H01L21/565 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/18 ,  H01L2224/211 ,  H01L2224/215 ,  H01L2224/24137 ,  H01L2224/24247 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2225/1023 ,  H01L2225/1094 ,  H01L2924/01029 ,  H01L2924/15153 ,  H01L2924/35 ,  H01L2924/37001 ,  H05K1/0203 ,  H05K1/0204 ,  H05K1/115 ,  H05K1/185 ,  H05K3/0047 ,  H05K3/108 ,  H05K3/32 ,  H05K3/4688 ,  H05K2201/066 ,  H05K2201/09827 ,  H05K2201/10416

Abstract: A chip packaging includes a substrate, a first chip, a molding material, a first circuit, and a second circuit. The substrate includes a bottom surface, a first top surface disposed above the bottom surface with a first height, and a second top surface disposed above the bottom surface with a second height. The first height is smaller than the second height. The first chip is disposed on the first top surface. The molding material is disposed on the substrate and covers the first chip. The first and second circuits are disposed on the molding material, and are respectively and electrically connected to the first chip and the second top surface of the substrate. The substrate is made of copper material with huge area and has the properties of high current withstand capacity and high thermal efficiency. The second top surface protects the first chip from damage.

公开(公告)号：US09647029B2

公开(公告)日：2017-05-09

申请号：US14979533

申请日：2015-12-28

Applicant: Industrial Technology Research Institute

Inventor： Wei-Chung Lo ,  Yu-Wei Huang ,  Tao-Chih Chang ,  Chih-Ming Shen

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/48139 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: In an embodiment, a light emitting device comprises a light emitting diode chip and a spherical extending electrode. The light emitting diode chip includes a semiconductor epitaxial structure, a first electrode and a second electrode. The first electrode and the second electrode are disposed on two opposite sides of the semiconductor epitaxial structure, respectively. The first electrode is disposed between the semiconductor epitaxial structure and the spherical extending electrode, and the spherical extending electrode is electrically connected to the semiconductor epitaxial structure electrically through the first electrode. The volume of the spherical extending electrode is greater than that of the light emitting diode chip.

公开(公告)号：US09308603B2

公开(公告)日：2016-04-12

申请号：US13855719

申请日：2013-04-03

Applicant: Industrial Technology Research Institute

Inventor： Kuo-Shu Kao ,  Tao-Chih Chang ,  Wen-Chih Chen

IPC: B32B15/20 ,  B23K35/24 ,  B32B15/01 ,  B23K35/28 ,  B23K35/30 ,  H01L23/495 ,  H01L23/00 ,  H01L23/373 ,  H01L25/065

CPC classification number: B23K35/24 ,  B23K35/282 ,  B23K35/3013 ,  B23K35/302 ,  B32B15/01 ,  B32B15/018 ,  H01L23/3735 ,  H01L23/49513 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/0345 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/2612 ,  H01L2224/27826 ,  H01L2224/291 ,  H01L2224/29118 ,  H01L2224/29561 ,  H01L2224/29565 ,  H01L2224/29582 ,  H01L2224/29583 ,  H01L2224/29639 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29663 ,  H01L2224/29664 ,  H01L2224/29669 ,  H01L2224/29673 ,  H01L2224/29676 ,  H01L2224/29678 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83007 ,  H01L2224/8309 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83815 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  Y10T428/12792 ,  H01L2924/00015 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/0105 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01076 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A solder and a solder joint structure formed by the solder are provided. The solder includes a zinc-based material, a copper film, and a noble metal film. The copper film completely covers the surface of the zinc-based material. The noble metal film completely covers the copper film. The solder joint structure includes a zinc-based material and an intermetallic layer. The intermetallic layer consists of zinc and noble metal and completely covers the surface of the zinc-based material.

Abstract translation: 提供由焊料形成的焊料和焊点结构。 焊料包括锌基材料，铜膜和贵金属膜。 铜膜完全覆盖锌基材料的表面。 贵金属膜完全覆盖铜膜。 焊接结构包括锌基材料和金属间化合物层。 金属间层由锌和贵金属组成，并完全覆盖锌基材料的表面。

公开(公告)号：US09143243B2

公开(公告)日：2015-09-22

申请号：US14018434

申请日：2013-09-05

Applicant: Industrial Technology Research Institute

Inventor： Shin-Yi Huang ,  Wen-Chih Chen ,  Tao-Chih Chang

IPC: H04B10/80 ,  H01L23/00

CPC classification number: H04B10/802 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40137 ,  H01L2224/40225 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A power module for high/low voltage insulation is provided. The power module includes a first substrate, a second substrate and an insulating substrate. The first substrate includes a first control circuit and a light source, wherein the first control circuit controls the light source to emit light. The second substrate includes a light-sensing part, a second control circuit and a power device. The light-sensing part receives the light of the light source of the first substrate to send a sensing information. The second control circuit correspondingly drives the power device in accordance with the sensing information. The insulating substrate is disposed between the first substrate and second substrate.

Abstract translation: 提供高/低压绝缘电源模块。 功率模块包括第一衬底，第二衬底和绝缘衬底。 第一基板包括第一控制电路和光源，其中第一控制电路控制光源发光。 第二基板包括光感测部件，第二控制电路和功率器件。 光检测部分接收第一基板的光源的光以发送感测信息。 第二控制电路根据感测信息相应地驱动功率器件。 绝缘基板设置在第一基板和第二基板之间。