公开(公告)号：US08987899B2

公开(公告)日：2015-03-24

申请号：US13357046

申请日：2012-01-24

申请人： Hiroshi Asami

发明人： Hiroshi Asami

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H05K1/11 ,  H05K3/34 ,  H05K3/28 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/8191 ,  H01L2924/00013 ,  H01L2924/12042 ,  H05K1/111 ,  H05K3/28 ,  H05K3/3436 ,  H05K3/3484 ,  H05K2201/099 ,  H05K2203/0315 ,  H05K2203/043 ,  Y02P70/611 ,  Y02P70/613 ,  Y10T29/49155 ,  H01L2224/11 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2924/00

摘要： A circuit board includes: an electrode portion which has a copper layer, a copper oxide layer formed thereon, and a removal portion formed by partially removing the copper oxide layer so as to partially expose the copper layer from the copper oxide layer; and a solder bump for flip chip mounting formed on the copper layer exposed by the removal portion.

摘要翻译： 电路板包括：具有铜层，形成在其上的氧化铜层的电极部分和通过部分去除氧化铜层而形成的去除部分，以从铜氧化物层部分地露出铜层; 以及在由去除部分露出的铜层上形成的用于倒装芯片安装的焊料凸块。

公开(公告)号：US08684523B2

公开(公告)日：2014-04-01

申请号：US13452511

申请日：2012-04-20

申请人： Osamu Wada ,  Tadashi Kaga ,  Hiroshi Asami

发明人： Osamu Wada ,  Tadashi Kaga ,  Hiroshi Asami

IPC分类号： G02C7/02

CPC分类号： G02C7/024

摘要： A spectacle lens includes a first region which is located in at least part of a portion of a lens where a pivotal angle of an eyeball of a wearer ranges from 20 to 60 degrees and in which correcting astigmatism has priority over correcting average power based on prescribed power, and a second region which is formed inside the first region and in which correcting the average power has priority over correcting the astigmatism.

摘要翻译： 眼镜透镜包括第一区域，其位于透镜的至少一部分中，其中佩戴者的眼球的枢转角度在20度至60度之间，其中校正像散优先于基于规定的平均功率的校正平均功率 功率，以及第二区域，其形成在第一区域内，并且校正平均功率优先于校正散光。

公开(公告)号：US08455969B2

公开(公告)日：2013-06-04

申请号：US12078894

申请日：2008-04-08

申请人： Yoshihiro Nabe ,  Masaki Hatano ,  Hiroshi Asami ,  Akihiro Morimoto

发明人： Yoshihiro Nabe ,  Masaki Hatano ,  Hiroshi Asami ,  Akihiro Morimoto

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/481 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/16235 ,  H01L2924/3025 ,  H01L2924/00014

摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.

摘要翻译： 半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口 从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体 通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口 的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

公开(公告)号：US08252628B2

公开(公告)日：2012-08-28

申请号：US12046637

申请日：2008-03-12

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L21/76

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 半导体器件包括具有彼此相对的第一和第二表面的半导体衬底，第一表面是通过在其上设置有电子元件的有源表面，形成为在电子元件的周边部分中连接到电子元件的焊盘电极 在所述活性表面上具有从所述第二表面向所述焊盘电极延伸以便不到达所述半导体衬底的所述第一表面的第一开口，形成为从所述第一开口的底表面到达所述焊盘电极的第二开口， 直径小于第一开口的直径，形成为覆盖第一开口和第二开口的侧壁表面的绝缘层，以及形成在绝缘层内部的导电层，以至少覆盖绝缘层的内壁表面 层和第二开口的底表面。

公开(公告)号：US20110193223A1

公开(公告)日：2011-08-11

申请号：US13018723

申请日：2011-02-01

申请人： Hiroshi Ozaki ,  Hiroshi Asami

发明人： Hiroshi Ozaki ,  Hiroshi Asami

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L25/0657 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L25/50 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05562 ,  H01L2224/05647 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/81097 ,  H01L2225/06513 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/3841 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/05552

摘要： A semiconductor device includes: a semiconductor chip having a semiconductor substrate; a pad electrode formed on the semiconductor substrate; a base metal layer formed on said pad electrode; and a bump electrode formed on the base metal layer, in which an exposed surface including a side surface of the base metal layer is covered with the solder bump electrode.

摘要翻译： 半导体器件包括：具有半导体衬底的半导体芯片; 形成在所述半导体基板上的焊盘电极; 形成在所述焊盘电极上的贱金属层; 以及形成在所述基底金属层上的凸起电极，其中包括所述基底金属层的侧表面的暴露表面被所述焊料凸块电极覆盖。

公开(公告)号：US07691672B2

公开(公告)日：2010-04-06

申请号：US11799023

申请日：2007-04-30

申请人： Masaki Hatano ,  Hiroshi Asami

发明人： Masaki Hatano ,  Hiroshi Asami

IPC分类号： H01L21/00

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73207 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： The present invention provides a substrate treating method including the steps of joining a one-side surface of a substrate to be treated to a support substrate, treating the substrate to be treated in the condition where the substrate to be treated is supported by the support substrate, and removing the support substrate from the substrate to be treated. The step of joining the substrate to be treated to the support substrate includes melting a joint bump formed on the substrate to be treated so as to join the substrate to be treated to the support substrate, and the step of removing the support substrate from the substrate to be treated includes polishing the support substrate so as to remove the support substrate.

摘要翻译： 本发明提供了一种基板处理方法，包括以下步骤：将待处理基板的单面表面连接到支撑基板上，在被处理基板被支撑基​​板支撑的状态下处理待处理基板 从待处理的基板上除去支撑基板。 将待处理基板接合到支撑基板的步骤包括熔化形成在待处理基板上的接合凸起，以将待处理的基板接合到支撑基板，以及从基板移除支撑基板的步骤 待处理包括抛光支撑基板以移除支撑基板。

公开(公告)号：US20080224249A1

公开(公告)日：2008-09-18

申请号：US12046637

申请日：2008-03-12

申请人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

发明人： Yoshihiro Nabe ,  Hiroshi Asami ,  Yuji Takaoka ,  Yoshimichi Harada

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L27/14634 ,  H01L27/14636 ,  H01L31/0224 ,  H01L2224/02372 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16238 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

摘要翻译： 半导体器件包括具有彼此相对的第一和第二表面的半导体衬底，第一表面是通过在其上设置有电子元件的有源表面，形成为在电子元件的周边部分中连接到电子元件的焊盘电极 在所述活性表面上具有从所述第二表面向所述焊盘电极延伸以便不到达所述半导体衬底的所述第一表面的第一开口，形成为从所述第一开口的底表面到达所述焊盘电极的第二开口， 直径小于第一开口的直径，形成为覆盖第一开口和第二开口的侧壁表面的绝缘层，以及形成在绝缘层内部的导电层，以至少覆盖绝缘层的内壁表面 层和第二开口的底表面。

公开(公告)号：US20070102191A1

公开(公告)日：2007-05-10

申请号：US11644143

申请日：2006-12-22

申请人： Hiroshi Asami ,  Hidetoshi Kusano ,  Yuji Nishitani ,  Ken Orui

发明人： Hiroshi Asami ,  Hidetoshi Kusano ,  Yuji Nishitani ,  Ken Orui

IPC分类号： H05K1/11

CPC分类号： H05K3/4694 ,  H01L21/4846 ,  H01L21/4857 ,  H01L23/49833 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/0023 ,  H05K3/205 ,  H05K3/4617 ,  H05K3/4623 ,  H05K2201/0195 ,  H05K2201/09536 ,  H05K2201/09881 ,  H05K2201/09972 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00

摘要： The present invention provides a method of manufacturing a multilayer wiring substrate, which can preserve the dimensional stability of a conductor pattern at a fine pitch, solve the restriction on a process from the viewpoint of material selection, and further reduce a manufacturing cost, and a multilayer wiring substrate. A second wiring substrate formed on a supporting sheet made of metal and an adhesive layer are partially stacked on a predetermined region of a first wiring substrate by using the supporting sheet. After the lamination of the second wiring substrate, the supporting sheet is finally etched and removed. The second wiring substrate is stacked only on the portion required to be multilayered on the first wiring substrate to thereby reduce the amount of the construction material of the second wiring substrate.

摘要翻译： 本发明提供一种制造多层布线基板的方法，其可以以细间距保持导体图案的尺寸稳定性，从材料选择的角度解决对工艺的限制，并且进一步降低制造成本，并且 多层布线基板。 形成在由金属制成的支撑片和粘合剂层上的第二布线基板通过使用支撑片部分堆叠在第一布线基板的预定区域上。 在第二布线基板的层叠之后，最后蚀刻并去除支撑片。 第二布线基板仅堆叠在第一布线基板上需要多层的部分上，从而减少第二布线基板的结构材料的量。

公开(公告)号：US6156242A

公开(公告)日：2000-12-05

申请号：US284444

申请日：1999-04-14

申请人： Kiyohiro Saito ,  Hiroshi Asami

发明人： Kiyohiro Saito ,  Hiroshi Asami

IPC分类号： B29C33/04 ,  B29C45/56 ,  B29C45/73 ,  B29C45/77 ,  B29C45/78 ,  B29D11/00 ,  B29L11/00

CPC分类号： B29C33/048 ,  B29C45/561 ,  B29C45/73 ,  B29D11/00009 ,  B29D11/00413 ,  B29C2045/7343 ,  B29C33/046 ,  B29C45/7337 ,  B29L2011/0016

摘要： A cavity 22 in an injection molding assembly includes a lower mold insert 21 for shaping a lens convex surface and an upper mold insert 20 for shaping a lens concave surface. When the heated injection molding assembly is cooled and a lens is ejected after a molten resin is pressurized by the upper mold insert 20, the temperature of the lower mold insert 21 is lowered below the temperature of the upper mold insert 20, which prevents the molded lens from bending at a central portion and enable high transfer precision of insert shapes.

摘要翻译： PCT No.PCT / JP97 / 00874 Sec。 371 1999年4月14日第 102（e）1999年4月14日PCT 1998年3月18日PCT PCT。 出版物WO98 / 41379 日期1998年9月24日注射成型组件中的空腔22包括用于成形透镜凸面的下模插入件21和用于成形透镜凹面的上模插入件20。 当加热的注塑组件被冷却并且在熔融树脂被上模插件20加压之后喷射透镜时，下模插件21的温度降低到上模插件20的温度以下，这防止了模制 透镜在中心部分弯曲并且能够实现插入物形状的高转印精度。

公开(公告)号：US5481879A

公开(公告)日：1996-01-09

申请号：US267775

申请日：1994-06-28

申请人： Hiroshi Asami ,  Mitsuru Suzuki

发明人： Hiroshi Asami ,  Mitsuru Suzuki

IPC分类号： F25B9/00 ,  F25B9/14

CPC分类号： F25B9/14 ,  F25B2309/003

摘要： A refrigerator with a regenerator having a good and stable cooling function comprises: a cylinder having a circular inner surface and being made of a material having a low heat conductivity and a high hermetic sealing performance; a displacer having a circular outer surface having a slightly smaller diameter than the inner surface of the cylinder, forming a main gas passage there through, and containing regeneration material therein, the displacer being disposed in the cylinder to be reciprocally movable in the axial direction the cylinder and forming an expansion space at one end of the cylinder; a groove pattern formed on one of the outer surface of the displacer and the inner surface of the cylinder, for forming an auxiliary gas passage for supplying gas into and recovering the gas from the expansion space, the groove pattern including a groove at least partially formed along the direction intersecting the axial direction of the displacer, such as a helical groove, the groove allowing a gas flowing through a gap between the cylinder and the displacer from one end to the other end of the displacer to positively heat-exchange with the cylinder and the displacer.

摘要翻译： 具有良好且稳定的冷却功能的再生器的冰箱包括：具有圆形内表面并由具有低导热性和高气密密封性能的材料制成的圆筒; 具有圆形外表面的置换器，该圆形外表面具有比圆筒内表面稍小的直径，在其上形成主气体通道，并且在其中容纳再生材料，置换器设置在圆柱体中以使其在轴向方向上往复运动 在气缸的一端形成一个膨胀空间; 形成在所述置换器的外表面和所述气缸的内表面之一上的槽图案，用于形成用于从所述膨胀空间供应气体并从所述膨胀空间回收气体的辅助气体通道，所述槽图案包括至少部分地形成 沿着与诸如螺旋槽的置换器的轴向相交的方向，所述槽允许气体从所述气缸和所述置换器之间的间隙流出，从所述置换器的一端到另一端与所述气缸积极地热交换 和置换器。