公开(公告)号：US5264190A

公开(公告)日：1993-11-23

申请号：US866489

申请日：1992-04-10

Applicant: Masatosi Kobayashi ,  Yoshiharu Komine

Inventor： Masatosi Kobayashi ,  Yoshiharu Komine

IPC: C30B19/04 ,  C30B19/06 ,  H01L21/368

CPC classification number: H01L21/02625 ,  C30B19/04 ,  C30B19/063 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562

Abstract: An apparatus for liquid phase epitaxial film growth includes a mother boat for supporting a substrate, a melt boat slidable on the mother boat for containing a melt and selectively bringing the substrate and the melt into contact, and a lid for opening and closing the melt boat. The mother boat is disposed in a quartz tube and push rods extend into the tube for sliding the lid to open and close the melt boat.

Abstract translation: 一种用于液相外延膜生长的装置包括用于支撑基底的母船，可在母船上滑动以容纳熔体并且选择性地使基底和熔体接触的熔体舟和用于打开和关闭熔体舟的盖 。 母船设置在石英管中，推杆延伸到管中以滑动盖以打开和关闭熔体船。

公开(公告)号：US4906325A

公开(公告)日：1990-03-06

申请号：US254380

申请日：1988-10-05

Applicant: Sergio Bernardi

Inventor： Sergio Bernardi

IPC: C30B19/00 ,  C30B19/04 ,  C30B29/48 ,  H01L21/368

CPC classification number: H01L21/02628 ,  C30B19/04 ,  C30B29/48 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02625 ,  Y10S117/906

Abstract: A method of making symmetrical mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting to a specific thermal cycle a weighed tellurium quantity, a saturating cadmium telluride substrate and a mercury bath.

公开(公告)号：US4862236A

公开(公告)日：1989-08-29

申请号：US227585

申请日：1988-08-02

Applicant: Soo H. Shin ,  John G. Pasko ,  J. R. Anderson

Inventor： Soo H. Shin ,  John G. Pasko ,  J. R. Anderson

IPC: H01L21/368 ,  H01L31/032 ,  H01L31/103 ,  H01L31/107

CPC classification number: H01L31/107 ,  H01L21/02411 ,  H01L21/02417 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02625 ,  H01L21/02628 ,  H01L31/032 ,  H01L31/1032

Abstract: A semiconducting photodiode for detecting light at a predetermined wavelength includes a first semiconducing region having a first conductivity type which is a quaternary alloy of Hg, Mn, Cd, and Te. A second semiconducting region having a second conductivity type electrically contacts the first semiconducting region, such that a semiconducting junction is formed between the first and second regions. The relative proportions of Hg, Mn, and Cd in the first region are selected so that the bandgap energy of the first region is approximately equal to the spin orbit splitting energy of the first region at the desired wavelength.

Abstract translation: 用于检测预定波长的光的半导体光电二极管包括具有第一导电类型的第一半导体区域，其是Hg，Mn，Cd和Te的四元合金。 具有第二导电类型的第二半导电区域电接触第一半导体区域，使得在第一和第二区域之间形成半导体结。 选择第一区域中Hg，Mn和Cd的相对比例，使得第一区域的带隙能近似等于所需波长处的第一区域的自旋轨道分裂能。

公开(公告)号：US4648917A

公开(公告)日：1987-03-10

申请号：US769909

申请日：1985-08-26

Applicant: Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

Inventor： Robert E. Kay ,  Hakchill Chan ,  Fred Ju ,  Burton A. Bray

IPC: C30B23/02 ,  H01L21/363 ,  H01L21/365

CPC classification number: C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02631

Abstract: A layer of HgCdTe (15) is epitaxially grown onto a CdTe substrate (5). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0.1 mm and 10 mm. The substrate (5) and source (3) are heated within a temperature range of between 500.degree. C. and 625.degree. C. for a processing step having a duration of between 5 minutes and 4 hours. During at least 5 minutes of this processing step, the substrate (5) is made to have a greater temperature than the source (3). Preferably the substrate (5) is never at a lower temperature than the source (3). The source (3) and substrate (5) are heated together in a thermally insulating, reusable ampoule (17). The CdTe substrate (5) is preferably a thin film epitaxially grown on a support (10) e.g., of sapphire or GaAs. When support (10) is not used, the CdTe substrate (5) is polished; and sublimation and solid state diffusion growth mechanisms are present in the growth of the HgCdTe (15). Means are disclosed for preventing contamination of the reactants during HgTe (3) synthesis and bulk CdTe wafer (5) polishing.

Abstract translation: 一层HgCdTe（15）外延生长到CdTe基板（5）上。 HgTe源（3）与CdTe衬底（5）间隔0.1mm至10mm的距离。 将衬底（5）和源（3）在500℃至625℃的温度范围内加热，以进行持续时间为5分钟至4小时的加工步骤。 在该处理步骤的至少5分钟内，使基板（5）具有比源（3）更大的温度。 优选地，衬底（5）从不比源（3）低的温度。 源（3）和衬底（5）在隔热，可重复使用的安瓿（17）中一起加热。 CdTe衬底（5）优选是外延生长在例如蓝宝石或GaAs的载体（10）上的薄膜。 当不使用支撑体（10）时，对CdTe基板（5）进行抛光; 并且HgCdTe（15）的生长中存在升华和固态扩散生长机制。 公开了用于在HgTe（3）合成和体积CdTe晶片（5）抛光期间防止反应物污染的手段。

公开(公告)号：US4465565A

公开(公告)日：1984-08-14

申请号：US479545

申请日：1983-03-28

Applicant: Kenneth R. Zanio

Inventor： Kenneth R. Zanio

IPC: C25D5/02 ,  C25D9/08 ,  H01L21/368 ,  H01L21/471 ,  H01L31/0216 ,  H01L31/18 ,  C25D7/12

CPC classification number: C25D9/08 ,  C25D5/02 ,  H01L21/02411 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/471 ,  H01L31/0216 ,  H01L31/1832 ,  Y10S205/915

Abstract: A thin passivating layer (14) of CdTe is formed on a layer of photoconductive HgCdTe (4) by means of electrochemical deposition. The photoconductive layer (4) is used as a cathode. A first anode (26) is fabricated of tellurium and a second anode (28) is fabricated of an inert substance such as graphite. An electrolyte (30) comprises an aqueous solution of CdSO.sub.4 and unsaturated TeO.sub.2. Alternatively, electrolyte (30) can be saturated with TeO.sub.2, in which case a first anode is fabricated of an inert substance, and an optional second anode is fabricated of cadmium. After purifying the cathode (1) and the electrolyte (30), cadmium and tellurium are simultaneously deposited upon cathode (1). Stoichiometric balance is maintained to maximize the resistivity of the passivating CdTe layer (14). This is accomplished by regulating the deposition voltage of cathode (1) with respect to a saturated calomel electrode (22). In a first embodiment, an n-type region (16) is formed in the p-type photoconductive layer (4) subsequent to electrochemical deposition of the passivating CdTe layer (14). In a second embodiment, the n-type region (16) is formed in the p-type layer (4) prior to electrochemical deposition of the CdTe passivating layer (14).

Abstract translation: 通过电化学沉积在一层光导的HgCdTe（4）上形成一个CdTe薄的钝化层（14）。 光电导层（4）用作阴极。 第一阳极（26）由碲制成，第二阳极（28）由惰性物质如石墨制成。 电解质（30）包含CdSO 4水溶液和不饱和TeO 2。 或者，电解质（30）可以用TeO 2饱和，在这种情况下，第一阳极由惰性物质制成，并且任选的第二阳极由镉制成。 纯化阴极（1）和电解质（30）后，镉和碲同时沉积在阴极（1）上。 维持化学计量平衡以使钝化CdTe层（14）的电阻率最大化。 这通过调节阴极（1）相对于饱和甘汞电极（22）的沉积电压来实现。 在第一实施例中，在钝化CdTe层（14）的电化学沉积之后，在p型光电导层（4）中形成n型区域（16）。 在第二实施例中，在电化学沉积CdTe钝化层（14）之前，在p型层（4）中形成n型区域（16）。

公开(公告)号：US4106959A

公开(公告)日：1978-08-15

申请号：US702393

申请日：1976-07-06

Applicant: James Vincent DiLorenzo ,  William Charles Niehaus ,  Lawrence John Varnerin, Jr.

Inventor： James Vincent DiLorenzo ,  William Charles Niehaus ,  Lawrence John Varnerin, Jr.

IPC: H01L21/205 ,  H01L29/864 ,  H01L29/207 ,  H01L29/48

CPC classification number: H01L29/864 ,  H01L21/02381 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/017 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/065 ,  Y10S148/079 ,  Y10S148/129 ,  Y10S148/139 ,  Y10S438/936

Abstract: The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.

Abstract translation: IMPATT二极管的工作频率取决于工作期间形成的耗尽区的宽度。 包括由精整阻挡层接触的非均匀掺杂的耗尽区的高效GaAs IMPATT二极管的频率可以通过在与所需的整流屏障相接触的整流屏障接触的表面正下方的深度处形成“电荷” 耗尽区。

公开(公告)号：US3902924A

公开(公告)日：1975-09-02

申请号：US39326473

申请日：1973-08-30

Applicant: HONEYWELL INC

Inventor： MACIOLEK RALPH B ,  SPEERSCHNEIDER CHARLES J

IPC: C30B19/04 ,  C30B19/06 ,  H01L21/368 ,  H01L31/18 ,  H01L7/62

CPC classification number: H01L31/1832 ,  C30B19/04 ,  C30B19/061 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02411 ,  H01L21/0242 ,  H01L21/0248 ,  H01L21/02562 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S148/064

Abstract: Thin layers of mercury cadmium telluride, (Hg,Cd)Te, are formed by liquid phase epitaxy.

Abstract translation: 通过液相外延形成薄层的碲化镉汞汞（Hg，Cd）Te。

公开(公告)号：US20160064335A1

公开(公告)日：2016-03-03

申请号：US14837331

申请日：2015-08-27

Applicant: SOCIETE FRANCAISE DE DETECTEURS INFRAROUGES-SOFRADIR

Inventor： Olivier CHEVRIER ,  Emmanuel CARRERE ,  Nicolas PERE-LAPERNE

IPC: H01L23/544 ,  H01L27/146

CPC classification number: H01L23/544 ,  C30B9/12 ,  C30B25/18 ,  H01L21/02411 ,  H01L21/0243 ,  H01L21/02562 ,  H01L21/02617 ,  H01L21/08 ,  H01L21/101 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14649 ,  H01L27/1465 ,  H01L27/14669 ,  H01L27/14683 ,  H01L27/1469 ,  H01L27/14696 ,  H01L2223/54426 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of positioning elements or additional technological levels (1) on the incident surface of an infrared detector of hybridized type, said detector being formed of a detection circuit (1, 10) comprising an array network of photosensitive sites (2) for the wavelength ranges of interest, hybridized on a read circuit (4), said detection circuit resulting from the epitaxial growth of a detection material on a substrate, comprising forming within the detection circuit (1, 10) indexing patterns (7, 14) by marking of the growth substrate.

Abstract translation: 一种将元件或附加技术级别（1）定位在杂交型红外检测器的入射表面上的方法，所述检测器由检测电路（1,10）形成，该检测电路包括用于波长的光敏部位（2）的阵列网络 感兴趣的范围，在读取电路（4）上杂交，所述检测电路由检测材料在衬底上的外延生长而形成，包括通过标记检测电路（1,10）在检测电路（1,10）内形成索引图案（7,14） 生长底物。

公开(公告)号：US09269850B2

公开(公告)日：2016-02-23

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Long Cheng ,  Pawel Mrozek

IPC: H01L31/18 ,  H01L21/02 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US20130098433A1

公开(公告)日：2013-04-25

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L31/02966 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

Abstract translation: 一种改进的光电器件及其制造方法，其包括与半导体吸收层相邻的界面层，其中界面层包括半导体层中的材料，该材料从接触吸收层的界面层的侧面减少到 接口层的相对侧。