公开(公告)号：US20160047691A1

公开(公告)日：2016-02-18

申请号：US13750709

申请日：2013-01-25

申请人： FLIR Systems, Inc.

发明人： Gregory A. Carlson ,  Alex Matson ,  Andrew Sharpe ,  Davey Beard ,  Paul Schweikert ,  Robert Simes

IPC分类号： G01J5/10 ,  H01L27/146 ,  G01J1/02 ,  G01J1/44 ,  G01J5/02

CPC分类号： G01J5/20 ,  G01J1/0204 ,  G01J1/44 ,  G01J5/02 ,  G01J5/0215 ,  G01J5/023 ,  G01J5/046 ,  G01J5/10 ,  G01J2005/0077 ,  G01J2005/204 ,  H01L22/14 ,  H01L22/32 ,  H01L27/146 ,  H01L27/14618 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14669 ,  H01L27/14687 ,  H01L27/14698 ,  H01L37/02 ,  H04N5/2251 ,  H04N5/33 ,  Y10T29/49826

摘要： An infrared detector useful in, e.g., infrared cameras, includes a substrate having an array of infrared detectors and a readout integrated circuit interconnected with the array disposed on an upper surface thereof, for one or more embodiments. A generally planar window is spaced above the array, the window being substantially transparent to infrared light. A mesa is bonded to the window. The mesa has closed marginal side walls disposed between an outer periphery of a lower surface of the window and an outer periphery of the upper surface of the substrate and defines a closed cavity between the window and the array that encloses the array. A solder seal bonds the mesa to the substrate so as to seal the cavity.

摘要翻译： 用于例如红外相机的红外检测器包括具有红外检测器阵列的基板和与设置在其上表面上的阵列互连的读出集成电路，用于一个或多个实施例。 大致平面的窗口在阵列上方间隔开，窗口基本上对于红外光是透明的。 台面粘合到窗户。 台面已经封闭了边缘侧壁，其设置在窗口的下表面的外周边和基板的上表面的外周之间，并且在窗口和包围阵列的阵列之间限定了封闭的空腔。 焊接密封件将台面连接到基板以便密封空腔。

公开(公告)号：US20160043118A1

公开(公告)日：2016-02-11

申请号：US14885262

申请日：2015-10-16

申请人： Renesas Electronics Corporation

发明人： Tadashi YAMAGUCHI

IPC分类号： H01L27/146

CPC分类号： H01L27/1461 ,  H01L23/26 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14698 ,  H01L31/0352 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device having good properties. Particularly, the semiconductor device is provided which can improve imaging properties. The semiconductor device (CMOS image sensor) includes a plurality of pixels, each having a photodiode PD for generating a charge by receiving light, and a transfer transistor TX for transferring the charge generated by the photodiode PD. The semiconductor device further includes an active region AcTP with the photodiode, and an active region AcG located on an upper side of the region AcTP in the planar direction and having a contact Pg to which a ground potential is applied. A gettering region GET is disposed in the active region AcG.

公开(公告)号：US20160020241A1

公开(公告)日：2016-01-21

申请号：US14795129

申请日：2015-07-09

申请人： Commissariat a L'Energie Atomique et aux Energies Alternatives

发明人： Laurent MOLLARD ,  Francois Boulard ,  Guillaume Bourgeois

IPC分类号： H01L27/146 ,  H01L31/18 ,  H01L31/103

CPC分类号： H01L27/14643 ,  H01L27/1443 ,  H01L27/1446 ,  H01L27/14607 ,  H01L27/1463 ,  H01L27/14696 ,  H01L27/14698 ,  H01L31/1032 ,  H01L31/1832

摘要： A planar photodiode array including a useful layer made of CdxHg1-xTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.

摘要翻译： 包括由CdxHg1-xTe制成的有用层的平面光电二极管阵列。 有用层包括至少两个叠加的掺杂层，两个掺杂层之间的每个界面形成单个PN结; 有用层具有从有用层的上表面延伸的至少一个分离区域，并且在穿过PN结的同时分离至少两个有用的体积; 并且在有用层中超​​过预定深度时，有用体积中的平均镉浓度小于分离区域中的平均镉浓度。

公开(公告)号：US09231020B2

公开(公告)日：2016-01-05

申请号：US14156620

申请日：2014-01-16

申请人： Dmitry Veinger ,  Assaf Lahav ,  Omer Katz ,  Ruthie Shima-Edelstein

发明人： Dmitry Veinger ,  Assaf Lahav ,  Omer Katz ,  Ruthie Shima-Edelstein

IPC分类号： H01L27/146 ,  H01L27/148

CPC分类号： H01L27/14698 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14812

摘要： Some demonstrative embodiments include devices and/or methods of gettering on silicon on insulator (SOI) substrate. For example, a complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC) may include a plurality of pixels arranged on a wafer, a pixel of the pixels including: a silicon active area; at least one non-silicided leakage-sensitive component formed on the active area, the leakage-sensitive component is sensitive to metal contaminants; a non-leakage-sensitive area formed on the active area, the non-leakage-sensitive area surrounding the leakage-sensitive component; and at least one silicided gettering region formed on the non-leakage-sensitive area to trap the metal contaminants.

摘要翻译： 一些说明性实施例包括在绝缘体上硅（SOI）衬底上吸收的器件和/或方法。 例如，互补金属氧化物半导体（CMOS）集成电路（IC）可以包括布置在晶片上的多个像素，像素的像素包括：硅有源区; 在活性区域上形成的至少一种非硅化的渗漏敏感组分，渗漏敏感组分对金属污染物敏感; 在有源区域上形成的非泄漏敏感区域，围绕泄漏敏感部件的非泄漏敏感区域; 以及形成在非渗漏敏感区域上的至少一个硅化吸气区，以捕获金属污染物。

公开(公告)号：US09231019B2

公开(公告)日：2016-01-05

申请号：US14099449

申请日：2013-12-06

申请人： CANON KABUSHIKI KAISHA

发明人： Mineo Shimotsusa

IPC分类号： H01L21/00 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14698 ,  H04N5/378

摘要： A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.

摘要翻译： 一种制造固态图像传感器的方法，包括在具有第一和第二表面的半导体层中形成第一导电类型的第一隔离区域，形成第一隔离区域，该第一隔离区域包括第一注入，用于通过 在所述半导体层中形成第二导电类型的电荷蓄积区，在所述第一退火之后进行第一退火，在所述半导体层的所述第一表面侧形成互连，以及形成所述第一导电性的第二隔离区 形成第二隔离区域，该第二隔离区域包括用于通过第二表面将离子注入半导体层的第二注入。 第一和第二隔离区域布置在相邻的电荷累积区域之间。

公开(公告)号：US09190445B2

公开(公告)日：2015-11-17

申请号：US14326924

申请日：2014-07-09

申请人： Renesas Electronics Corporation

发明人： Tadashi Yamaguchi

IPC分类号： H01L27/146 ,  H01L23/26 ,  H01L31/0352

CPC分类号： H01L27/1461 ,  H01L23/26 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14698 ,  H01L31/0352 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device having good properties. Particularly, the semiconductor device is provided which can improve imaging properties. The semiconductor device (CMOS image sensor) includes a plurality of pixels, each having a photodiode PD for generating a charge by receiving light, and a transfer transistor TX for transferring the charge generated by the photodiode PD. The semiconductor device further includes an active region AcTP with the photodiode, and an active region AcG located on an upper side of the region AcTP in the planar direction and having a contact Pg to which a ground potential is applied. A gettering region GET is disposed in the active region AcG.

摘要翻译： 提供具有良好性能的半导体器件。 特别地，提供了可以提高成像性能的半导体器件。 半导体器件（CMOS图像传感器）包括多个像素，每个像素具有用于通过接收光产生电荷的光电二极管PD，以及用于传输由光电二极管PD产生的电荷的传输晶体管TX。 该半导体器件还包括具有光电二极管的有源区AcTP和位于区域AcTP的上侧的平面方向上的有源区AcG，并具有施加接地电位的触点Pg。 吸收区域GET被放置在活动区域​​AcG中。

公开(公告)号：US20150311248A1

公开(公告)日：2015-10-29

申请号：US14261481

申请日：2014-04-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14645 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14698

摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

摘要翻译： 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个隔离结构分别设置在两个相应的辐射感测区域之间。 隔离结构从基板的第二侧突出。

公开(公告)号：US20150270306A1

公开(公告)日：2015-09-24

申请号：US14223938

申请日：2014-03-24

申请人： SiOnyx, Inc.

发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Leonard Forbes ,  Chintamani Palsule

IPC分类号： H01L27/146

CPC分类号： H01L27/14638 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14698

摘要： Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

摘要翻译： 提供光敏设备和相关方法。 在一个方面，例如，光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域以及耦合到 半导体衬底并且可操作以从所述至少一个结转移电信号。 在一个方面，纹理化区域可操作以便于从红外线电磁辐射的检测中产生电信号。 在另一方面，与电磁辐射相互作用进一步包括与缺少纹理区域的半导体衬底相比增加半导体衬底的有效吸收波长。

公开(公告)号：US09142690B2

公开(公告)日：2015-09-22

申请号：US14215296

申请日：2014-03-17

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shuang-Ji Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wen-De Wang ,  Jeng-Shyan Lin ,  Cheng-Ying Ho

IPC分类号： H01L31/02 ,  H01L21/30 ,  H01L31/0232 ,  H01L27/146 ,  H01L23/00

CPC分类号： H01L31/02005 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L31/02327 ,  H01L2224/0345 ,  H01L2224/03831 ,  H01L2224/0391 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01029 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method of fabricating a semiconductor device includes providing a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, forming, on the front side of the device substrate, a metal feature, forming, on the back side of the device substrate, an insulating layer, forming, on the back side of the semiconductor device, a trench exposing the metal feature, forming a bonding pad in the trench in electrical communication with the metal feature, and forming, on the insulating layer, a metal shield, in which the metal shield and the bonding pad have different thicknesses relative to each other.

摘要翻译： 一种制造半导体器件的方法包括提供具有与半导体器件的前侧和后侧对应的前侧和后侧的器件基板，在器件基板的正面上形成金属特征，形成 在所述器件基板的背侧，形成绝缘层，在所述半导体器件的背侧形成暴露所述金属特征的沟槽，在所述沟槽中形成与所述金属特征电连通的接合焊盘， 在绝缘层上的金属屏蔽层，金属屏蔽层和焊盘相对于彼此具有不同的厚度。

公开(公告)号：US09142465B1

公开(公告)日：2015-09-22

申请号：US13956868

申请日：2013-08-01

申请人： Sandia Corporation

发明人： Daniel A. Bender

IPC分类号： H01L21/00 ,  H01L21/66 ,  B23K26/00

CPC分类号： H01L22/12 ,  B23K26/354 ,  H01L22/14 ,  H01L22/20 ,  H01L27/14649 ,  H01L27/14698

摘要： Precise annealing of identified defective regions of a Focal Plane Array (“FPA”) (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.

摘要翻译： 确定的焦平面阵列（“FPA”）的缺陷区域的精确退火（例如，不包括FPA的无缺陷区域）有助于从已读取电子学杂交和/或封装的FPA中去除缺陷。 任选地在诸如在低温下的操作条件下进行辐射，使得可以在退火之前，期间和之后评估FPA的性能而不需要热循环。