公开(公告)号：US4254429A

公开(公告)日：1981-03-03

申请号：US55650

申请日：1979-07-09

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L29/16 ,  H01L29/24 ,  H01L29/26 ,  H01L31/105 ,  H01L31/109 ,  H01L31/11 ,  H01L31/111 ,  H01L29/161

CPC分类号： H01L31/111 ,  H01L29/1604 ,  H01L29/247 ,  H01L29/263 ,  H01L31/1055 ,  H01L31/109 ,  H01L31/1105

摘要： A hetero junction semiconductor device having at least one inter-semiconductor hetero junction, which has at least a first non-single-crystal semiconductor region having a first energy gap, a second non-single-crystal semiconductor region having a second energy gap different from the first energy gap and a third non-single-crystal semiconductor region serving as the hetero junction formed to extend between the first and second semiconductor regions and having an energy gap continuously changing from the first energy gap on the side of the first semiconductor region to the second energy gap on the side of the second semiconductor region, and in which the first, second and third semiconductor regions are doped with recombination center neutralizers.

摘要翻译： 具有至少一个半导体异质结的异质结半导体器件，其具有至少具有第一能隙的第一非单晶半导体区域，具有不同于第一能隙的第二能隙的第二非单晶半导体区域 第一能隙和用作异质结的第三非单晶半导体区域形成为在第一和第二半导体区域之间延伸并且具有从第一半导体区域侧的第一能隙连续变化的能隙到 在第二半导体区域侧的第二能隙，并且其中第一，第二和第三半导体区域掺杂有复合中心中和剂。

公开(公告)号：US4240088A

公开(公告)日：1980-12-16

申请号：US064661

申请日：1979-08-08

申请人： William C. Myers

发明人： William C. Myers

IPC分类号： H01L31/105 ,  H01L31/111 ,  H01L31/167 ,  H03K17/78 ,  H01L31/12

CPC分类号： H01L31/111 ,  H01L31/105 ,  H01L31/167 ,  H03K17/78

摘要： A high voltage, fast acting electronic switch is formed from a reverse-biased PIN diode having an exposed intrinsic region, together with a controllable optical source for emitting radiation directly onto the intrinsic region to switch the diode from its non-conducting state to its conducting state.

摘要翻译： 高电压，快速作用的电子开关由具有暴露的本征区域的反向偏置PIN二极管形成，以及用于将辐射直接发射到本征区域的可控光源，以将二极管从其不导通状态切换到其导通 州。

公开(公告)号：US4203124A

公开(公告)日：1980-05-13

申请号：US949057

申请日：1978-10-06

申请人： James P. Gordon ,  Robert E. Nahory ,  Martin A. Pollack ,  John M. Worlock

发明人： James P. Gordon ,  Robert E. Nahory ,  Martin A. Pollack ,  John M. Worlock

IPC分类号： H01L31/10 ,  H01L29/205 ,  H01L31/107 ,  H01L31/111 ,  H01L29/90

CPC分类号： H01L31/111 ,  H01L29/205 ,  H01L31/1075

摘要： Devices constructed according to the present invention provide low noise avalanche photodetectors. The devices are comprised of a sequence of at least four layers of semiconductor material of alternating opposed conductivity. In a first embodiment the layers form alternating homojunctions and heterojunctions at the interface between adjacent layers, and the bandgap of the layers on either side of the homojunctions decreases in the direction of the propagating signal. In another embodiment the layers form heterojunctions at the interfaces between adjacent layers; the layers are grouped into a sequence of pairs of layers where the bandgap of the two layers in each pair are substantially equal; and the bandgap of the layers in the sequence of pairs of layers decreases in the direction of the propagating signal. The effect of the structure of the multilayer device is to create traps for one sign of carrier and to prevent the trapped carrier from avalanching through amplification regions of the device.

摘要翻译： 根据本发明构造的装置提供低噪声雪崩光电探测器。 这些器件由具有交替的相反电导率的至少四层半导体材料的序列组成。 在第一实施例中，这些层在相邻层之间的界面处形成交替的同态和异质结，并且均匀线的任一侧上的层的带隙在传播信号的方向上减小。 在另一个实施例中，这些层在相邻层之间的界面处形成异质结; 层被分组成一对层序列，其中每对中的两层的带隙基本相等; 并且层对中的层的带隙在传播信号的方向上减小。 多层器件的结构的效果是为载体的一个符号产生陷阱，并且防止捕获的载体通过器件的放大区域雪崩。

公开(公告)号：US3686684A

公开(公告)日：1972-08-22

申请号：US3686684D

申请日：1970-05-26

申请人： SONY CORP

发明人： MATSUSHITA TAKESHI ,  YAGI HAJIME

IPC分类号： H01L29/00 ,  H01L31/111 ,  H01L11/00 ,  H01L9/12 ,  H01L15/00

CPC分类号： H01L31/111 ,  H01L29/00

摘要： An electric circuit which exhibits negative impedance characteristics. Several embodiments are shown for producing ''''N'''' shape, ''''S'''' shape, and modified ''''N'''' shape negative impedance characteristics. The circuit includes a semiconductor device of the kind having three independent regions on a substrate, and a pair of bias sources; one source is applied between two of the regions, and the other is applied at least to the third region. By suitable bias arrangements the negative impedances are produced.

公开(公告)号：US3078196A

公开(公告)日：1963-02-19

申请号：US82092659

申请日：1959-06-17

申请人： BELL TELEPHONE LABOR INC

发明人： ROSS IAN M

IPC分类号： H01L21/00 ,  H01L21/24 ,  H01L27/082 ,  H01L29/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/40 ,  H01L29/86 ,  H01L31/111

CPC分类号： H01L29/86 ,  H01L21/00 ,  H01L21/24 ,  H01L27/082 ,  H01L29/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/40 ,  H01L31/111

公开(公告)号：US09255345B2

公开(公告)日：2016-02-09

申请号：US14332653

申请日：2014-07-16

申请人： BAE SYSTEMS Information & Electronic Systems Integration Inc.

发明人： Vu Anh Vu ,  Sandra L. Hyland ,  Robert L. Kamocsai ,  Daniel J. O'Donnell ,  Andrew T. Pomerene

IPC分类号： H01L21/00 ,  C30B25/16 ,  H01L31/028 ,  H01L31/111 ,  C30B29/68 ,  C30B29/52 ,  C30B29/06 ,  H01L21/02 ,  H01L27/144

CPC分类号： C30B25/165 ,  C30B29/06 ,  C30B29/52 ,  C30B29/68 ,  H01L21/02507 ,  H01L21/02532 ,  H01L27/1446 ,  H01L31/028 ,  H01L31/035254 ,  H01L31/105 ,  H01L31/111

摘要： A bulk manufacturing method for growing silicon-germanium stained-layer superlattice (SLS) using an ultra-high vacuum-chemical vapor deposition (UHV-CVD) system and a detector using it is disclosed. The growth method overcomes the stress caused by silicon and germanium lattice mismatch, and leads to uniform, defect-free layer-by-layer growth. Flushing hydrogen between the layer growths creates abrupt junctions between superlattice structure (SLS) layers. Steps include flowing a mixture of phosphine and germane gases over a germanium seed layer. This in-situ doped germanium growth step produces an n-doped germanium layer. Some of the phosphorus diffuses into the underlying germanium and reduces the stress in the underlying germanium that is initially created by the lattice mismatch between germanium and silicon. Phosphine can be replaced by diborane if a p-doped layer is desired. The reduction of stress results in a smooth bulk germanium growth.

摘要翻译： 公开了使用超高真空 - 化学气相沉积（UHV-CVD）系统生长硅 - 锗染色层超晶格（SLS）的批量制造方法和使用它的检测器。 生长方法克服了由硅和锗晶格失配引起的应力，并导致均匀，无缺陷的逐层生长。 在层生长之间冲洗氢在超晶格结构（SLS）层之间产生突变结。 步骤包括在锗种子层上流动磷化氢和锗烷气体的混合物。 这种原位掺杂的锗生长步骤产生n掺杂的锗层。 一些磷扩散到下面的锗中，并降低最初由锗和硅之间的晶格失配产生的下伏锗的应力。 如果需要p掺杂层，则可以用乙硼烷代替膦。 应力的减少导致光滑的大量锗生长。

公开(公告)号：US09231137B1

公开(公告)日：2016-01-05

申请号：US13152947

申请日：2011-06-03

申请人： Hasan Sharifi ,  Terence J. De Lyon ,  Rajesh D. Rajavel

发明人： Hasan Sharifi ,  Terence J. De Lyon ,  Rajesh D. Rajavel

IPC分类号： H01L31/0232 ,  H01L31/0328 ,  H01L31/0224

CPC分类号： H01L31/035272 ,  H01L27/14649 ,  H01L27/14652 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/0328 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1035 ,  H01L31/109 ,  H01L31/11 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1116 ,  H01L31/1844 ,  Y02E10/544

摘要： Using a highly doped Cap layer of the same composition as the Contact material in an nBn or pBp infrared photodetector allows engineering of the energy band diagram to facilitate minority carrier current flow in the contact region and block minority current flow outside the Contact region. The heavily doped Cap layer is disposed on the Barrier between the Contacts but electrically isolated from the Contact material.

摘要翻译： 使用与nBn或pBp红外光电探测器中的接触材料相同组成的高度掺杂的Cap层，允许对能带图进行工程化，以便在接触区域内促进少数载流子电流流动并阻止接触区域外部的少数电流。 重掺杂Cap层设置在触点之间的阻挡层上，但与触点材料电隔离。

公开(公告)号：US20150214389A1

公开(公告)日：2015-07-30

申请号：US14604703

申请日：2015-01-24

申请人： Applied Physical Electronics, L.C.

发明人： William C. Nunnally

IPC分类号： H01L31/0288 ,  H01L31/111 ,  H01L31/113 ,  H01L31/11

CPC分类号： H01L31/0288 ,  H01L31/105 ,  H01L31/1105 ,  H01L31/111 ,  H01L31/1113 ,  H01L31/1136 ,  H01L31/167

摘要： An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

摘要翻译： 将创新制造的反向偏置PN结的电场塌缩的光学方法导致半导体开关在平面电子雪崩中从电流阻挡模式转变为电流导通模式。 该开关结构和光学启动开关闭合的方法适用于采用反向偏置PN结的常规半导体开关配置，其包括但不限于晶闸管，双极晶体管和绝缘栅双极晶体管。

公开(公告)号：US20140239344A1

公开(公告)日：2014-08-28

申请号：US13890680

申请日：2013-05-09

申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.

发明人： Jaehoon PARK ,  In Hyuk SONG ,  Dong Soo SEO ,  Kwang Soo KIM ,  Kee Ju UM

IPC分类号： H01L29/739 ,  H01L29/66

CPC分类号： H01L29/66348 ,  H01L27/0817 ,  H01L27/088 ,  H01L27/0921 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/41733 ,  H01L29/4232 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66477 ,  H01L29/66484 ,  H01L29/66954 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/768 ,  H01L29/78 ,  H01L31/111 ,  H01L31/1113 ,  H01L51/0512

摘要： There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer.

摘要翻译： 提供了一种功率半导体器件，包括第一导电型漂移层; 形成在漂移层上的第二导电型体层，形成在漂移层下面的第二导电型集电极层; 通过贯穿本体层和漂移层的一部分而形成的第一栅极，形成在主体层中并形成为与第一栅极间隔开的第一导电型发射极层，覆盖主体层的上部的第二栅极 和发射极层，并且在第一栅极上形成为平面型栅极，以及在第一和第二栅极的接触表面之间形成的偏析阻挡层，其具有主体层，发射极层和漂移层。

公开(公告)号：US08022390B1

公开(公告)日：2011-09-20

申请号：US11840278

申请日：2007-08-17

申请人： Jin K. Kim ,  Malcolm S. Carroll

发明人： Jin K. Kim ,  Malcolm S. Carroll

IPC分类号： H01L31/0224

CPC分类号： H01L31/1035 ,  H01L27/1446 ,  H01L31/111

摘要： A photodetector for detecting infrared light in a wavelength range of 3-25 μm is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and InxGa1-xSb with 0≦x≦0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

摘要翻译： 公开了一种用于检测波长范围为3-25μm的红外光的光检测器。 光电检测器具有由半导体层形成的台面结构，其包括由交替的InAs和In x Ga 1-x Sb与0＆nlE; x＆nlE; 0.5交替的层形成的超晶格。 杂质掺杂区域形成在台面结构的侧壁上，以提供可以提供增加的载流子迁移率和减少的表面复合的光生载流子的横向传导。 可以在光电检测器中使用可选的偏置电极来控制和改变其中的截止波长或耗尽宽度。 光电检测器可以形成为单色或多色设备，并且还可以用于形成与常规读出集成电路兼容的焦平面阵列。