公开(公告)号：US20150187563A1

公开(公告)日：2015-07-02

申请号：US14580621

申请日：2014-12-23

Applicant: Applied Materials, Inc.

Inventor： BRIAN SAXTON UNDERWOOD ,  Abhijit Basu Mallick ,  Mukund Srinivasan ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/02 ,  H01L21/324

CPC classification number: H01L21/0262 ,  C23C16/401 ,  C23C16/482 ,  C23C16/54 ,  C23C16/56 ,  H01J11/36 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/324

Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

Abstract translation: 描述了一种用于形成可流动膜的方法和装置。 该方法包括向含有基底的处理室提供无氧的前体气体混合物。 无氧前体气体通过在处理室中暴露于UV辐射而被活化。 鼓励由UV激活产生的分子片段沉积在基底上以在基底上形成可流动的膜。 衬底可以被冷却以促进沉积。 可以通过加热和/或通过进一步暴露于UV辐射来使膜硬化。

公开(公告)号：US20140268083A1

公开(公告)日：2014-09-18

申请号：US14139507

申请日：2013-12-23

Applicant: Applied Materials, Inc.

Inventor： Soumendra N. Barman ,  Cara Beasley ,  Abhijit Basu Mallick ,  Ralf Hofmann ,  Nitin K. Ingle

IPC: G03F1/24 ,  G03F7/16 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F7/164 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.

Abstract translation: 一种极紫外镜或空白生产系统包括：用于在半导体衬底上沉积平坦化层的第一沉积系统; 用于在所述平坦化层上沉积超光滑层的第二沉积系统，所述超平滑层具有重组的分子; 以及用于在超平滑层上沉积多层堆叠的第三沉积系统。 极紫外线空白包括：基材; 衬底上的平坦化层; 在平坦化层上的超光滑层，超光滑层具有重组的分子; 多层堆叠 并在多层堆叠上覆盖层。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的反射镜; 用于在平坦化层上放置具有平坦化层和超平滑层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。

公开(公告)号：US20140248754A1

公开(公告)日：2014-09-04

申请号：US13834508

申请日：2013-03-15

Applicant: APPLIED MATERIALS INC.

Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

IPC: H01L21/20

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

公开(公告)号：US20130177847A1

公开(公告)日：2013-07-11

申请号：US13633252

申请日：2012-10-02

Applicant: Applied Materials, Inc.

Inventor： Amit Chatterjee ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: G03F7/075 ,  G03F7/20

CPC classification number: G03F7/0757 ,  G03F7/0044 ,  G03F7/20

Abstract: Methods and corresponding photoresists are described for fine linewidth lithography using x-rays, e-beams, visible spectrum optical lithography, ultra-violet optical lithography or extreme ultra-violet lithography. The methods include the formation of a photoresist film including a dopant having an atomic mass greater than or equal to twenty two. The dopant may be introduced daring the formation of the photoresist. The photoresist includes the dopant to increase the absorption of radiation during lithography. The photoresist may be silicon-, germanium or carbon-based photoresists.

Abstract translation: 描述了使用X射线，电子束，可见光谱光刻，紫外线光刻或极紫外光刻的细线宽光刻法的方法和相应的光致抗蚀剂。 所述方法包括形成包含原子质量大于或等于二十二的掺杂剂的光致抗蚀剂膜。 可以引入掺杂剂来大量形成光致抗蚀剂。 光致抗蚀剂包括掺杂剂以增加光刻期间的辐射吸收。 光致抗蚀剂可以是硅，锗或碳基光致抗蚀剂。

公开(公告)号：US20250046602A1

公开(公告)日：2025-02-06

申请号：US18229884

申请日：2023-08-03

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark J. Saly ,  Lakmal Charidu Kalutarage ,  Feng Q. Liu ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Akhil Singhal

IPC: H01L21/02 ,  C23C14/00 ,  C23C14/04 ,  C23C14/06 ,  C23C14/10 ,  C23C14/34 ,  C23C14/58

Abstract: A method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.

公开(公告)号：US12198936B2

公开(公告)日：2025-01-14

申请号：US18242082

申请日：2023-09-05

Applicant: Applied Materials, Inc.

Inventor： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/311 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/768

Abstract: Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material. A process for removal of germanium oxide is also disclosed.

公开(公告)号：US20240387190A1

公开(公告)日：2024-11-21

申请号：US18197545

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Jongbeom Seo ,  Eswaranand Venkatasubramanian ,  Santhosh Kiran Rajarajan ,  Diwakar Kedlaya ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor and a metal-containing precursor. The silicon-containing precursor and the metal-containing precursor may be fluidly isolated prior to reaching the processing region. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

公开(公告)号：US20240387174A1

公开(公告)日：2024-11-21

申请号：US18197528

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Guangyan Zhong ,  Eswaranand Venkatasubramanian ,  Rui Cheng ,  Santhosh Kiran Rajarajan ,  Ganesh Balasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman ,  Guoqing Li

IPC: H01L21/033

Abstract: Exemplary methods of semiconductor processing may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-halogen-containing precursor and a metal-containing precursor. A substrate may be housed within the processing region. The methods may include generating plasma effluents of the deposition precursors. The methods may include forming a layer of silicon-and-metal-containing material on the substrate.

公开(公告)号：US20240234531A1

公开(公告)日：2024-07-11

申请号：US18538273

申请日：2023-12-13

Applicant: Applied Materials, Inc.

Inventor： Sai Hooi Yeong ,  Liu Jiang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Benjamin Colombeau ,  El Mehdi Bazizi ,  Balasubramanian Pranatharthiharan

IPC: H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L21/823807 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/775 ,  H01L29/78696

Abstract: Semiconductor devices (e.g., gate-all-around (GAA) devices), process tools for manufacturing GAA devices and methods of manufacturing GAA devices, and inner spacer liners and inner spacers for GAA devices, are described. The methods comprise performing a chemical vapor deposition (CVD) process to form an amorphous silicon liner and an inner spacer within a superlattice structure formed on a top surface of a semiconductor substrate. The superlattice structure has a plurality of semiconductor material layers (e.g., silicon germanium (SiGe)) and a corresponding plurality of channel layers (e.g., silicon (Si)). The amorphous silicon liner is conformally formed along the GAA device, including along the recessed semiconductor material layers and the corresponding plurality of channel layers, and the inner spacer is formed directly on the amorphous silicon liner. One or more operations of the methods described herein are performed in situ in an integrated processing tool system.

公开(公告)号：US20240183035A1

公开(公告)日：2024-06-06

申请号：US17991931

申请日：2022-11-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Long Liu

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/04

CPC classification number: C23C16/45553 ,  C23C16/0272 ,  C23C16/045

Abstract: Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.