Facsimile apparatus adapted to communicate via an acoustic coupler
    58.
    发明授权
    Facsimile apparatus adapted to communicate via an acoustic coupler 失效
    适于通过声耦合器进行通信的传真设备

    公开(公告)号:US5297196A

    公开(公告)日:1994-03-22

    申请号:US856505

    申请日:1992-03-24

    CPC分类号: H04N1/33307

    摘要: An information communication apparatus includes acoustic and non-acoustic couplers, a switch for selectively connecting an information sending source of the apparatus to the acoustic or non-acoustic couplers, a setting unit for selectively setting items of a communication characteristic of each of the acoustic and non-acoustic couplers, a memorizing circuit for memorizing communication characteristics each having items the values of which are preset by the setting unit, a connection detector for detecting the connection of the acoustic coupler to a communication line, and an information sending controller. The controller connects the sending source to the acoustic or non-acoustic coupler by the switch in response to the acoustic coupler connection or not connection and controls the information sending according to the acoustic coupler or non-acoustic coupler communication characteristic from the memorizing circuit.

    摘要翻译: 信息通信设备包括声学和非声学耦合器,用于选择性地将设备的信息发送源连接到声学或非声学耦合器的开关,设置单元,用于选择性地设置每个声学和非声学耦合器的通信特性的项目,以及 非声学耦合器,用于存储通信特性的存储电路,每个通信特性各自具有由设置单元预设的项目,用于检测声耦合器到通信线路的连接的连接检测器和信息发送控制器。 控制器响应于声耦合器连接而将发送源连接到声学或非声学耦合器,或者不连接,并且根据来自存储电路的声耦合器或非声学耦合器通信特性控制信息发送。

    Semiconductor device with a multi-stepped source region and method for
producing the same
    59.
    发明授权
    Semiconductor device with a multi-stepped source region and method for producing the same 失效
    具有多级源极区域的半导体器件及其制造方法

    公开(公告)号:US5111258A

    公开(公告)日:1992-05-05

    申请号:US742081

    申请日:1991-07-31

    摘要: A semiconductor device includes a first region, a well-shaped second region formed in the first region and a third region formed in the well-shaped second region. Both the first region and the third region have a first conductive type, the well-shaped second region has a second conductive type. A gate electrode is formed on a channel of the well-shaped second region. The channel is sandwiched between the first region and the third region. According to the present invention, the depth of the third region is very deep in a portion near the channel and is very shallow in a portion far from the channel. A resistance of the well-shaped second region near a portion of the third region far from the channel is lower than near the portion of the third region near the channel.

    摘要翻译: 半导体器件包括第一区域,形成在第一区域中的良好形状的第二区域和形成在良好形状的第二区域中的第三区域。 第一区域和第三区域都具有第一导电类型,良好形状的第二区域具有第二导电类型。 在良好形状的第二区域的沟道上形成栅电极。 通道夹在第一区域和第三区域之间。 根据本发明,第三区域的深度在通道附近的部分非常深,并且在远离通道的部分中非常浅。 远离通道的第三区域附近的阱状第二区域的电阻低于靠近通道的靠近第三区域的部分的电阻。

    Magnetic steel plate for use as a magnetic shielding member and a method
for the manufacture thereof
    60.
    发明授权
    Magnetic steel plate for use as a magnetic shielding member and a method for the manufacture thereof 失效
    用作磁屏蔽构件的磁钢板及其制造方法

    公开(公告)号:US5019191A

    公开(公告)日:1991-05-28

    申请号:US454279

    申请日:1989-12-21

    IPC分类号: C21D8/12 C22C38/00

    摘要: A magnetic steel plate for use as a magnetic shielding member and a method for the manufacture thereof are disclosed, and the steel composition consists essentially of, by weight %;C: not greater than 0.05%,Si: greater than 0.30%, but not greater than 1.50%,Mn: not greater than 0.50%, sol Al: less than 0.005%, with the balance being Fe and incidental impurities. The magnetic steel plate has a ferrite grain size of 0 (zero) or smaller.

    摘要翻译: 公开了用作磁屏蔽构件的磁钢板及其制造方法,钢组成基本上由重量%组成; C:不大于0.05%,Si:大于0.30%,但不大于1.50%,Mn:不大于0.50%,溶胶Al:小于0.005%,余量为Fe和附带杂质。 磁钢板的铁素体晶粒尺寸为0(零)以下。