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    Metal electrical fuse structure
    51.
    发明申请
    Metal electrical fuse structure 有权
    金属电熔丝结构

    公开(公告)号：US20070145515A1

    公开(公告)日：2007-06-28

    申请号：US11320233

    申请日：2005-12-27

    申请人： Hsueh-Chung Chen ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Shin-Puu Jeng ,  Shang-Yun Hou

    发明人： Hsueh-Chung Chen ,  Hao-Yi Tsai ,  Hsien-Wei Chen ,  Shin-Puu Jeng ,  Shang-Yun Hou

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An electrical fuse and a method for forming the same are provided. The electrical fuse includes a dielectric layer over a shallow trench isolation region and a contact plug extending from a top surface of the dielectric layer to the shallow trench isolation region, wherein the contact plug comprises a middle portion substantially narrower than the two end portions. The contact plug forms a fuse element. The electrical fuse further includes two metal lines in a metallization layer on the dielectric layer, wherein each of the two metal lines is connected to different ones of the end portions of the contact plug.

    摘要翻译： 提供电熔丝及其形成方法。 电熔丝包括在浅沟槽隔离区域上的电介质层和从电介质层的顶表面延伸到浅沟槽隔离区域的接触插塞，其中接触插塞包括基本上比两个端部部分窄的中间部分。 接触插头形成熔丝元件。 电熔丝还包括在电介质层上的金属化层中的两条金属线，其中两条金属线中的每一条连接到接触插塞的不同端部。

    Aluminum/copper clad interconnect layer for VLSI applications
    52.
    发明授权
    Aluminum/copper clad interconnect layer for VLSI applications 有权

    公开(公告)号：US06777318B2

    公开(公告)日：2004-08-17

    申请号：US10222361

    申请日：2002-08-16

    申请人： Shin-Puu Jeng ,  Shang-Yun Hou

    发明人： Shin-Puu Jeng ,  Shang-Yun Hou

    IPC分类号： H01L2144

    CPC分类号： H01L23/53223 ,  H01L21/76838 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming at least one aluminum/copper clad interconnect comprising the following steps. A substrate is provided having an overlying patterned dielectric layer. The patterned dielectric layer having at least one lower opening. The at least one lower opening is lined with a first barrier layer. At least one planarized copper portion is formed within the at least one first barrier layer lined lower opening. A patterned layer is formed over the at least one planarized copper portion and the patterned dielectric layer. The patterned layer has at least one upper opening exposing at least a portion of the at least one planarized copper portion. The at least one upper opening is lined with a second barrier layer. At least one aluminum portion is formed within the at least one second barrier layer lined opening to form the at least one aluminum/copper clad interconnect.

    Through silicon via keep out zone formation along different crystal orientations
    58.
    发明授权
    Through silicon via keep out zone formation along different crystal orientations 有权
    通过硅通过沿着不同的晶体取向保持区域形成

    公开(公告)号：US08604619B2

    公开(公告)日：2013-12-10

    申请号：US13302653

    申请日：2011-11-22

    申请人： Cheng-Chieh Hsieh ,  Hung-An Teng ,  Shang-Yun Hou ,  Shin-Puu Jeng

    发明人： Cheng-Chieh Hsieh ,  Hung-An Teng ,  Shang-Yun Hou ,  Shin-Puu Jeng

    IPC分类号： H01L23/48

    CPC分类号： H01L23/562 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs.

    摘要翻译： 为硅通孔（TSV）形成保留区（KOZ）。 设备可以放置在由第一性能阈值确定的TSV的第一KOZ之外，使得由设备的TSV引起的应力冲击小于第一性能阈值，而第一KOZ仅包含应力冲击的那些点 由TSV引起的大于或等于第一个性能阈值。 用于TSV的第二KOZ可以类似地由第二性能阈值形成。 多个TSV可以沿着TSV的KOZ具有最小半径的方向被放置到TSV的中心，其可以是晶体取向[010]或[100]。 可以在多个TSV的整个KOZ的边界处形成多个TSV应力塞。