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公开(公告)号：US20130020698A1
公开(公告)日：2013-01-24
申请号：US13189127
申请日：2011-07-22
申请人： Cheng-Chieh Hsieh , Cheng-Lin Huang , Po-Hao Tsai , Shang-Yun Hou , Jing-Cheng Lin , Shin-Puu Jeng
发明人： Cheng-Chieh Hsieh , Cheng-Lin Huang , Po-Hao Tsai , Shang-Yun Hou , Jing-Cheng Lin , Shin-Puu Jeng
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L24/81 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/11474 , H01L2224/1148 , H01L2224/11616 , H01L2224/11825 , H01L2224/11849 , H01L2224/1191 , H01L2224/13013 , H01L2224/13015 , H01L2224/13018 , H01L2224/13019 , H01L2224/13022 , H01L2224/13023 , H01L2224/13025 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/1362 , H01L2224/13655 , H01L2224/13671 , H01L2224/13672 , H01L2224/16056 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/81121 , H01L2224/81143 , H01L2224/81193 , H01L2224/81815 , H01L2225/06513 , H01L2225/06555 , H01L2225/06565 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/0105 , H01L2924/01079 , H01L2924/12 , H01L2924/14 , H01L2924/3512 , H01L2924/35121 , H01L2924/384 , H01L2924/3841 , H01L2924/00014
摘要： A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically connected to another contact through the conductive material.
摘要翻译： 提供了一种用于导电柱的系统和方法。 一个实施例包括具有位于其外边缘周围的沟槽的导电柱。 当在导电柱上形成导电凸块时，沟槽用于引导诸如焊料的导电材料。 导电柱然后可以通过导电材料电连接到另一接触件。
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公开(公告)号：US20120306080A1
公开(公告)日：2012-12-06
申请号：US13298046
申请日：2011-11-16
申请人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Kuo-Ching Hsu , Cheng-Chieh Hsieh , Ying-Ching Shih , Po-Hao Tsai , Cheng-Lin Huang , Jing-Cheng Lin
发明人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Kuo-Ching Hsu , Cheng-Chieh Hsieh , Ying-Ching Shih , Po-Hao Tsai , Cheng-Lin Huang , Jing-Cheng Lin
IPC分类号： H01L23/52
CPC分类号： H01L24/11 , H01L23/147 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/04 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05073 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10145 , H01L2224/10156 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13017 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/13578 , H01L2224/13686 , H01L2224/16058 , H01L2224/16145 , H01L2224/81193 , H01L2224/81815 , H01L2924/01322 , H01L2924/01327 , H01L2924/3651 , H01L2924/3841 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2924/049 , H01L2924/053 , H01L2924/00
摘要： A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier.
摘要翻译： 封装组件不含其中的有源器件。 封装部件包括衬底，衬底中的通孔，衬底上的顶部电介质层和在顶部电介质层的顶表面上方具有顶表面的金属柱。 金属柱电连接到通孔。 扩散阻挡层在金属支柱的上表面之上。 焊料帽设置在扩散阻挡层上。
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公开(公告)号：US08664760B2
公开(公告)日：2014-03-04
申请号：US13343582
申请日：2012-01-04
申请人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hao Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
发明人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hao Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
CPC分类号： H01L24/11 , H01L23/147 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/04 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05073 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10145 , H01L2224/10156 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13017 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/13578 , H01L2224/13686 , H01L2224/16058 , H01L2224/16145 , H01L2224/81193 , H01L2224/81815 , H01L2924/01322 , H01L2924/01327 , H01L2924/3651 , H01L2924/3841 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2924/049 , H01L2924/053 , H01L2924/00
摘要： A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.
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公开(公告)号：US08610285B2
公开(公告)日：2013-12-17
申请号：US13298046
申请日：2011-11-16
申请人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Kuo-Ching Hsu , Cheng-Chieh Hsieh , Ying-Ching Shih , Po-Hao Tsai , Cheng-Lin Huang , Jing-Cheng Lin
发明人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Kuo-Ching Hsu , Cheng-Chieh Hsieh , Ying-Ching Shih , Po-Hao Tsai , Cheng-Lin Huang , Jing-Cheng Lin
IPC分类号： H01L23/498 , H01L21/768 , H01L23/48 , H01L29/40
CPC分类号： H01L24/11 , H01L23/147 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/04 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05073 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10145 , H01L2224/10156 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13017 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/13578 , H01L2224/13686 , H01L2224/16058 , H01L2224/16145 , H01L2224/81193 , H01L2224/81815 , H01L2924/01322 , H01L2924/01327 , H01L2924/3651 , H01L2924/3841 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2924/049 , H01L2924/053 , H01L2924/00
摘要： A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier.
摘要翻译： 封装组件不含其中的有源器件。 封装部件包括衬底，衬底中的通孔，衬底上的顶部电介质层，以及在顶部电介质层的顶表面上方具有顶表面的金属柱。 金属柱电连接到通孔。 扩散阻挡层在金属支柱的上表面之上。 焊料帽设置在扩散阻挡层上。
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公开(公告)号：US08816498B2
公开(公告)日：2014-08-26
申请号：US13189127
申请日：2011-07-22
申请人： Cheng-Chieh Hsieh , Cheng-Lin Huang , Po-Hao Tsai , Shang-Yun Hou , Jing-Cheng Lin , Shin-Puu Jeng
发明人： Cheng-Chieh Hsieh , Cheng-Lin Huang , Po-Hao Tsai , Shang-Yun Hou , Jing-Cheng Lin , Shin-Puu Jeng
IPC分类号： H01L23/485 , H01L21/768
摘要： A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically connected to another contact through the conductive material.
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公开(公告)号：US20120306073A1
公开(公告)日：2012-12-06
申请号：US13343582
申请日：2012-01-04
申请人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hoa Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
发明人： Chen-Hua Yu , Shin-Puu Jeng , Shang-Yun Hou , Cheng-Chieh Hsieh , Kuo-Ching Hsu , Ying-Ching Shih , Po-Hoa Tsai , Chin-Fu Kao , Cheng-Lin Huang , Jing-Cheng Lin
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L24/11 , H01L23/147 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/04 , H01L25/50 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/05073 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05666 , H01L2224/05681 , H01L2224/05686 , H01L2224/10145 , H01L2224/10156 , H01L2224/1146 , H01L2224/1147 , H01L2224/1182 , H01L2224/11831 , H01L2224/13017 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13565 , H01L2224/13578 , H01L2224/13686 , H01L2224/16058 , H01L2224/16145 , H01L2224/81193 , H01L2224/81815 , H01L2924/01322 , H01L2924/01327 , H01L2924/3651 , H01L2924/3841 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/01047 , H01L2924/049 , H01L2924/053 , H01L2924/00
摘要： A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar.
摘要翻译： 一种器件包括具有顶表面的顶部电介质层。 金属柱在顶部介电层的顶表面上具有一部分。 在金属柱的侧壁上形成非润湿层，其中非润湿层不能熔化到熔融焊料上。 焊接区域设置在金属柱上并电耦合到金属柱。
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公开(公告)号：US09337123B2
公开(公告)日：2016-05-10
申请号：US13546218
申请日：2012-07-11
申请人： Cheng-Chieh Hsieh , Way Lee Cheng , Shang-Yun Hou , Shin-Puu Jeng
发明人： Cheng-Chieh Hsieh , Way Lee Cheng , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号： H01L23/367 , H01L23/427 , H01L21/56 , H01L25/065 , H01L23/00
CPC分类号： H01L23/427 , H01L21/563 , H01L23/3675 , H01L23/3677 , H01L23/562 , H01L25/0657 , H01L2224/16 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06517 , H01L2225/06565 , H01L2225/06589
摘要： One or more heat pipes are utilized along with a substrate in order to provide heat dissipation through the substrate for heat that can build up at an interface between the substrate and one or more semiconductor chips in a package. In an embodiment the heat pipe may be positioned on a side of the substrate opposite the semiconductor chip and through-substrate vias may be utilized to dissipate heat through the substrate. In an alternative embodiment, the heat pipe may be positioned on a same side of the substrate as the semiconductor chip and may be thermally connected to the one or more semiconductor chips.
摘要翻译： 一个或多个热管与衬底一起使用，以便提供通过衬底的热量，其可以在衬底和封装中的一个或多个半导体芯片之间的界面处积聚。 在一个实施例中，热管可以位于与半导体芯片相对的一侧的衬底上，并且通孔衬底可以用于通过衬底散热。 在替代实施例中，热管可以位于与半导体芯片相同的衬底侧上，并且可以热连接到一个或多个半导体芯片。
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公开(公告)号：US09034695B2
公开(公告)日：2015-05-19
申请号：US13444662
申请日：2012-04-11
申请人： Cheng-Chieh Hsieh , Shang-Yun Hou , Shin-Puu Jeng
发明人： Cheng-Chieh Hsieh , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号： H01L21/00 , H01L21/50 , H01L23/427 , H01L21/48 , H01L23/498 , H01L21/56 , H01L23/31 , H01L23/00
CPC分类号： H01L21/50 , H01L21/4878 , H01L21/561 , H01L21/563 , H01L23/3128 , H01L23/427 , H01L23/49816 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/2919 , H01L2224/32225 , H01L2224/33107 , H01L2224/33181 , H01L2224/73204 , H01L2224/73253 , H01L2224/92225 , H01L2224/94 , H01L2224/97 , H01L2924/3511 , H01L2924/00014 , H01L2924/014 , H01L2224/81 , H01L2224/83 , H01L2224/11 , H01L2924/00
摘要： A method includes attaching a wafer on a carrier through an adhesive, and forming trenches in the carrier to convert the carrier into a heat sink. The heat sink, the carrier, and the adhesive are sawed into a plurality of packages.
摘要翻译： 一种方法包括通过粘合剂将晶片附着在载体上，并在载体中形成沟槽以将载体转换成散热器。 散热器，载体和粘合剂被锯成多个包装。
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公开(公告)号：US20140015106A1
公开(公告)日：2014-01-16
申请号：US13546218
申请日：2012-07-11
申请人： Cheng-Chieh Hsieh , Way Lee Cheng , Shang-Yun Hou , Shin-Puu Jeng
发明人： Cheng-Chieh Hsieh , Way Lee Cheng , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号： H01L23/34
CPC分类号： H01L23/427 , H01L21/563 , H01L23/3675 , H01L23/3677 , H01L23/562 , H01L25/0657 , H01L2224/16 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06517 , H01L2225/06565 , H01L2225/06589
摘要： One or more heat pipes are utilized along with a substrate in order to provide heat dissipation through the substrate for heat that can build up at an interface between the substrate and one or more semiconductor chips in a package. In an embodiment the heat pipe may be positioned on a side of the substrate opposite the semiconductor chip and through-substrate vias may be utilized to dissipate heat through the substrate. In an alternative embodiment, the heat pipe may be positioned on a same side of the substrate as the semiconductor chip and may be thermally connected to the one or more semiconductor chips.
摘要翻译： 一个或多个热管与衬底一起使用，以便提供通过衬底的热量，其可以在衬底和封装中的一个或多个半导体芯片之间的界面处积聚。 在一个实施例中，热管可以位于与半导体芯片相对的一侧的衬底上，并且通孔衬底可以用于通过衬底散热。 在替代实施例中，热管可以位于与半导体芯片相同的衬底侧上，并且可以热连接到一个或多个半导体芯片。
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公开(公告)号：US20130049220A1
公开(公告)日：2013-02-28
申请号：US13302653
申请日：2011-11-22
申请人： Cheng-Chieh Hsieh , Hung-An Teng , Shang-Yun Hou , Shin-Puu Jeng
发明人： Cheng-Chieh Hsieh , Hung-An Teng , Shang-Yun Hou , Shin-Puu Jeng
IPC分类号： H01L23/48
CPC分类号： H01L23/562 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： Keep out zones (KOZ) are formed for a through silicon via (TSV). A device can be placed outside a first KOZ of a TSV determined by a first performance threshold so that a stress impact caused by the TSV to the device is less than a first performance threshold while the first KOZ contains only those points at which a stress impact caused by the TSV is larger than or equal to the first performance threshold. A second KOZ for the TSV can be similarly formed by a second performance threshold. A plurality of TSVs can be placed in a direction that the KOZ of the TSV has smallest radius to a center of the TSV, which may be in a crystal orientation [010] or [100]. A plurality of TSV stress plug can be formed at the boundary of the overall KOZ of the plurality of TSVs.
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