公开(公告)号：US10439112B2

公开(公告)日：2019-10-08

申请号：US13554776

申请日：2012-07-20

申请人： Joseph G. Clark ,  Jeffrey Carl Britt ,  Amber C. Abare ,  Raymond Rosado ,  Harsh Sundani ,  David T. Emerson ,  Jeremy Scott Nevins

发明人： Joseph G. Clark ,  Jeffrey Carl Britt ,  Amber C. Abare ,  Raymond Rosado ,  Harsh Sundani ,  David T. Emerson ,  Jeremy Scott Nevins

IPC分类号： H01L33/58 ,  F21V21/00 ,  F21V7/00 ,  H01L33/48 ,  H01L33/62 ,  H01L33/64 ,  F21V29/74 ,  F21Y105/10 ,  F21K9/233 ,  F21Y115/10

摘要： Light emitter packages, systems, and methods having improved performance are disclosed. In one aspect, a light emitter package can include a submount that can include an anode and a cathode. A light emitter chip can be disposed over the submount such that the light emitter chip is mounted over at least a portion of the cathode and wirebonded to at least a portion of the anode.

公开(公告)号：US08896013B2

公开(公告)日：2014-11-25

申请号：US13017502

申请日：2011-01-31

申请人： Peter Scott Andrews ,  Raymond Rosado ,  Michael P. Laughner ,  David T. Emerson ,  Amber C. Abare ,  Jeffrey C. Britt

发明人： Peter Scott Andrews ,  Raymond Rosado ,  Michael P. Laughner ,  David T. Emerson ,  Amber C. Abare ,  Jeffrey C. Britt

IPC分类号： H01L33/62 ,  H01L25/075 ,  H01L33/58

摘要： High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption.

公开(公告)号：US20130141920A1

公开(公告)日：2013-06-06

申请号：US13312518

申请日：2011-12-06

申请人： David T. Emerson ,  Justin Lydon ,  Raymond Rosado ,  Jeffrey C. Britt

发明人： David T. Emerson ,  Justin Lydon ,  Raymond Rosado ,  Jeffrey C. Britt

IPC分类号： F21V5/04

CPC分类号： H01L33/486 ,  H01L33/20 ,  H01L33/54 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

摘要： Light emitter devices and methods with reduced dimensions and improved light output are provided. In one embodiment, a light emitter device includes a submount having an area of approximately 6 square millimeters (mm2) or less. The device can further include a light emitting chip on the submount and a lens disposed over the light emitting chip and positioned on the submount. The device can be operable for emitting light at approximately 100 lumens or higher.

摘要翻译： 提供了具有减小的尺寸和改善的光输出的发光器件和方法。 在一个实施例中，发光器件包括具有大约6平方毫米（mm 2）或更小的面积的底座。 该装置还可以包括在底座上的发光芯片和设置在发光芯片上并位于底座上的透镜。 该装置可操作用于发射大约100流明或更高的光。

公开(公告)号：US20110186873A1

公开(公告)日：2011-08-04

申请号：US13019812

申请日：2011-02-02

申请人： David T. Emerson

发明人： David T. Emerson

IPC分类号： H01L33/60 ,  H01L33/48

CPC分类号： H01L33/48 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/12032 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Packages, systems and methods for light emitting devices are disclosed. An LED package in one aspect can be of various sizes and configurations and can include one or more LEDs of a size smaller than those typically provided. The LED package or packages can for example be used for backlighting or other lighting fixtures. Optimized materials and techniques can be used for the LED packages to provide energy efficiency and long lifetime.

摘要翻译： 公开了用于发光器件的封装，系统和方法。 一个方面的LED封装可以具有各种尺寸和配置，并且可以包括尺寸小于通常提供的尺寸的一个或多个LED。 LED封装或封装可以例如用于背光或其他照明灯具。 优化的材料和技术可用于LED封装，以提供能源效率和长寿命。

公开(公告)号：US09905731B2

公开(公告)日：2018-02-27

申请号：US12796365

申请日：2010-06-08

申请人： John Adam Edmond ,  Michael J. Bergmann ,  David T. Emerson ,  Kevin Ward Haberern

发明人： John Adam Edmond ,  Michael J. Bergmann ,  David T. Emerson ,  Kevin Ward Haberern

IPC分类号： H01L33/00 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/325

摘要： A light emitting diode is disclosed that includes a silicon carbide substrate and a light emitting structure formed from the Group III nitride material system on the substrate. The diode has an area greater than 100,000 square microns and has a radiant flux at 20 milliamps current of at least 29 milliwatts at its dominant wavelength between 390 and 540 nanometers.

公开(公告)号：US07872268B2

公开(公告)日：2011-01-18

申请号：US11110545

申请日：2005-04-20

申请人： David T. Emerson

发明人： David T. Emerson

IPC分类号： H01L33/00 ,  H01L31/0312

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/0066 ,  H01L33/12

摘要： A semiconductor photonic device and associated method are disclosed. The device includes a substrate and a buffer structure on the substrate. The buffer structure is formed of a discontinuous layer of aluminum gallium nitride and a gallium nitride layer on the aluminum gallium nitride layer having a thickness that functionally minimizes the number of defects propagated through it. At least two doped Group III nitride layers are on the buffer structure, with the layers being of opposite conductivity type from one another for providing electrons and holes that combine to generate an emission from the device when current is applied to the device.

摘要翻译： 公开了一种半导体光子器件及其相关方法。 该器件包括衬底和衬底上的缓冲结构。 缓冲结构由氮化镓铝不连续层和氮化镓铝层上的氮化镓层形成，其厚度使得通过其传播的缺陷的数量功能最小化。 至少两个掺杂的III族氮化物层位于缓冲结构上，其中各层彼此具有相反的导电类型，用于提供电子和空穴，当电流施加到器件时，电子和空穴结合在一起产生来自器件的发射。

公开(公告)号：US20080191224A1

公开(公告)日：2008-08-14

申请号：US11673317

申请日：2007-02-09

申请人： David T. Emerson ,  Michael J. Bergmann ,  Kevin W. Haberern

发明人： David T. Emerson ,  Michael J. Bergmann ,  Kevin W. Haberern

IPC分类号： H01L33/00 ,  H01J1/62

CPC分类号： H01L33/42 ,  H01L33/405 ,  H01L33/50

摘要： A light emitting diode is disclosed that includes a transparent substrate with an absorption coefficient less than 4 per centimeter, epitaxial layers having absorption coefficients of less than 500 per centimeter in the layers other than the active emission layers, an ohmic contact and metallization layer on at least one of the epitaxial layers, with the ohmic contact and metallization layer having a transmission of at least about 80 percent, and bond pads with reflectivity greater than at least about 70 percent.

摘要翻译： 公开了一种发光二极管，其包括吸收系数小于每厘米4的透明衬底，除了有源发射层之外的层中的吸收系数小于每厘米500的外延层，在其上的欧姆接触和金属化层 至少一个外延层，欧姆接触层和金属化层具有至少约80％的透射率，以及反射率大于至少约70％的接合焊盘。

公开(公告)号：US20080179611A1

公开(公告)日：2008-07-31

申请号：US11899790

申请日：2007-09-07

申请人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller ,  David T. Emerson ,  John Edmond ,  Michael J. Bergmann ,  Jasper S. Cabalu ,  Jeffrey C. Britt ,  Arpan Chakraborty ,  Eric Tarsa ,  James Seruto ,  Yankun Fu

发明人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller ,  David T. Emerson ,  John Edmond ,  Michael J. Bergmann ,  Jasper S. Cabalu ,  Jeffrey C. Britt ,  Arpan Chakraborty ,  Eric Tarsa ,  James Seruto ,  Yankun Fu

IPC分类号： H01L33/00

CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L33/36 ,  H01L33/387 ,  H01L33/44 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

摘要翻译： 制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。 基座沉积在LED上，每个基座与其中一个LED电接触。 在LED上形成涂层，其中涂层埋入至少一些基座。 然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。 然后可以例如通过引线接合露出的基座。 本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。 还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

公开(公告)号：US08409972B2

公开(公告)日：2013-04-02

申请号：US11734218

申请日：2007-04-11

申请人： Michael J. Bergmann ,  Daniel C. Driscoll ,  David T. Emerson

发明人： Michael J. Bergmann ,  Daniel C. Driscoll ,  David T. Emerson

IPC分类号： H01L21/20

CPC分类号： H01L33/0079 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/0254 ,  H01L33/007

摘要： A method of forming electronic device precursors and devices with reduced cracking in relevant layers is disclosed along with resulting structures. The method includes the steps of growing a transition layer of undoped Group III nitride on a substrate that is other than a Group III nitride, growing an active structure of Group III nitride on the undoped layer, and removing the substrate from the undoped layer.

摘要翻译： 公开了一种在相关层中形成具有减少的开裂的电子器件前体和器件的方法以及所得到的结构。 该方法包括以下步骤：在不同于III族氮化物的衬底上生长未掺杂的III族氮化物的过渡层，在未掺杂层上生长III族氮化物的活性结构，以及从未掺杂层去除衬底。

公开(公告)号：US20120199852A1

公开(公告)日：2012-08-09

申请号：US13021496

申请日：2011-02-04

申请人： Theodore D. Lowes ,  Eric J. Tarsa ,  Bernd P. Keller ,  David T. Emerson

发明人： Theodore D. Lowes ,  Eric J. Tarsa ,  Bernd P. Keller ,  David T. Emerson

IPC分类号： H01L33/58

CPC分类号： G09F9/33 ,  G09F9/3026 ,  H01L25/0753 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： An LED component includes, according to a first embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an optical lens overlying the LED chips and having a lens base attached to the substrate, where the LED chips are positioned to provide a peak emission shifted from a perpendicular centerline of the lens base. The LED component includes, according to a second embodiment, a monolithic substrate, an array of LED chips disposed on a surface of the substrate, and an array of optical lenses, each optical lens overlying at least one of the LED chips and having a lens base attached to the substrate, where at least one of the LED chips is positioned to provide a peak emission shifted from a perpendicular centerline of the respective lens base.

摘要翻译： 根据第一实施例，LED组件包括单片基板，设置在基板的表面上的LED芯片的阵列以及覆盖LED芯片并且具有附接到基板的透镜基板的光学透镜，其中LED芯片 定位成提供从透镜基座的垂直中心线偏移的峰值发射。 根据第二实施例，LED组件包括单片基板，设置在基板的表面上的LED芯片阵列和光学透镜阵列，每个光学透镜覆盖至少一个LED芯片并具有透镜 基底，其中至少一个LED芯片被定位成提供从相应透镜基底的垂直中心线偏移的峰值发射。