公开(公告)号：US09837591B2

公开(公告)日：2017-12-05

申请号：US14888770

申请日：2014-05-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Frank Singer ,  Alexander Linkov ,  Stefan Illek ,  Wolfgang Mönch

IPC: H01L33/60 ,  H01L33/58 ,  H01L33/48 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46 ,  H01L23/00 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00 ,  H01L2224/4554

Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.

公开(公告)号：US09786824B2

公开(公告)日：2017-10-10

申请号：US14769198

申请日：2014-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Illek ,  Hans-Jürgen Lugauer ,  Jürgen Moosburger ,  Thomas Schwarz ,  Tansen Varghese

IPC: H01L33/54 ,  H01L33/00 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/54 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.

公开(公告)号：US09543471B2

公开(公告)日：2017-01-10

申请号：US14889316

申请日：2014-05-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Peter Nagel ,  Stefan Illek ,  Martin Strassburg

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/04 ,  H01L33/08 ,  H01L33/10

CPC classification number: H01L33/10 ,  H01L33/005 ,  H01L33/04 ,  H01L33/06 ,  H01L33/08

Abstract: An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active layer (240). A first tunnel junction (200) is formed between the first light-active layer (140) and the second light-active layer (240). A first Bragg reflector (160) is formed between the first light-active layer (140) and the first tunnel junction (200). A second Bragg reflector (260) is formed between the second light-active layer (240) and the first tunnel junction (200).

Abstract translation: 具有包括第一光活性层（140）和第二光活性层（240）的半导体层结构（100,1100）的光电子器件（10,1010）。 在第一光活性层（140）和第二光活性层（240）之间形成第一隧道结（200）。 第一布拉格反射器（160）形成在第一光活性层（140）和第一隧道结（200）之间。 第二布拉格反射器（260）形成在第二光活性层（240）和第一隧道结（200）之间。

公开(公告)号：US20160323942A1

公开(公告)日：2016-11-03

申请号：US15210174

申请日：2016-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter Nagel ,  Stefan Illek

IPC: H05B33/08 ,  H01L29/866 ,  H01L33/62 ,  H01L27/15 ,  H01L25/16 ,  H01L25/00

Abstract: An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.

Abstract translation: 光电子部件包括具有至少两个发光二极管的至少一个第一载体，其中二极管具有电连接，电连接被引导到接触区域，并且接触区域布置在第一载体的下侧上; 以及第二载体，其中另外的接触区域布置在所述第二载体的顶侧上，所述第一载体由所述第二载体的顶侧上的下侧承载并固定地连接到所述第二载体， 二极管的电源的环路和/或闭环控制被集成在第二载波中。

公开(公告)号：US09461218B2

公开(公告)日：2016-10-04

申请号：US14385116

申请日：2013-02-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Illek ,  Matthias Sabathil ,  Alexander Linkov ,  Thomas Bleicher ,  Norwin von Malm ,  Wolfgang Mönch

IPC: H01L33/58 ,  G02F1/1335 ,  H01L33/44 ,  H01L33/54 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60 ,  H01L33/64 ,  F21Y101/02 ,  F21Y105/00 ,  F21V8/00

CPC classification number: H01L33/58 ,  F21Y2101/00 ,  F21Y2105/00 ,  F21Y2115/10 ,  G02B6/0015 ,  G02B6/0018 ,  G02B6/0025 ,  G02F1/133603 ,  G02F1/133605 ,  G02F1/133606 ,  G02F1/133611 ,  G02F1/133615 ,  G02F2001/133607 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/507 ,  H01L33/54 ,  H01L33/60 ,  H01L33/644 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract translation: 在至少一个实施例中，表面光源包括具有用于产生主辐射的辐射主侧的一个或多个光电子半导体芯片。 散射体沿着半导体芯片的主发射方向设置在辐射主侧的下游。 散粒体设计用于散射初级辐射。 散射体的主发射方向相对于半导体芯片的主发射方向倾斜取向。

公开(公告)号：US20160247990A1

公开(公告)日：2016-08-25

申请号：US15030652

申请日：2014-10-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Dominik Scholz ,  Norwin von Malm ,  Stefan Illek

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A method of producing a contact element for an optoelectronic component includes providing an auxiliary carrier with a sacrificial layer arranged on a top side of the auxiliary carrier; providing a carrier structure having a top side and a rear side situated opposite the top side, wherein an insulation layer is arranged at the rear side of the carrier structure; connecting the sacrificial layer to the insulation layer by an electrically conductive connection layer; creating at least one blind hole extending from the top side of the carrier structure as far as the insulation layer; opening the insulation layer in a region of the at least one blind hole; arranging an electrically conductive material in the at least one blind hole; detaching the auxiliary carrier by separating the sacrificial layer; and patterning the electrically conductive connection layer.

Abstract translation: 一种制造用于光电子部件的接触元件的方法包括提供辅助载体，所述辅助载体具有布置在所述辅助载体的顶侧上的牺牲层; 提供具有与顶侧相对的顶侧和后侧的载体结构，其中绝缘层布置在载体结构的后侧; 通过导电连接层将牺牲层连接到绝缘层; 形成至少一个从所述载体结构的顶侧延伸至所述绝缘层的盲孔; 在所述至少一个盲孔的区域中打开所述绝缘层; 在所述至少一个盲孔中布置导电材料; 通过分离牺牲层来分离辅助载体; 并图案化导电连接层。

公开(公告)号：US09373766B2

公开(公告)日：2016-06-21

申请号：US14414803

申请日：2013-07-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Stefan Illek ,  Thomas Schwarz

IPC: H01L33/54 ,  H01L33/60 ,  H01L31/00 ,  H01L31/0232 ,  H01L51/52 ,  H01L25/075 ,  H01L33/48 ,  H01L33/56 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L25/167 ,  H01L25/50 ,  H01L31/00 ,  H01L31/02322 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/56 ,  H01L51/5271 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a first surface. The semiconductor chip is embedded in a mold body. The first surface is elevated with respect to a top side of the mold body. A reflective layer is arranged on the top side of the mold body.

Abstract translation: 光电子半导体部件包括具有第一表面的光电子半导体芯片。 半导体芯片嵌入模具体内。 第一表面相对于模具主体的顶侧被提升。 反射层设置在模体的顶侧。

公开(公告)号：US20160076731A1

公开(公告)日：2016-03-17

申请号：US14784779

申请日：2014-04-15

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Wolfgang Mönch ,  Stefan Illek ,  Alexander Linkov

IPC: F21V5/00 ,  F21V17/06 ,  G02B3/00

CPC classification number: F21V5/005 ,  F21V5/004 ,  F21V17/06 ,  F21Y2105/10 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B3/0006 ,  G02B3/0056 ,  G02B5/045 ,  G02B19/0014 ,  G02B19/0066 ,  G09F9/33 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optical arrangement includes a multiplicity of light-emitting chips on a carrier. In this case, first light-emitting chips respectively include pixels of a first group and second light-emitting chips respectively comprise pixels of a second group. Respectively one of the first and one of the second light-emitting chips are arranged in first unit cells in a planar fashion on the carrier. Furthermore, an optical element is provided, which is disposed downstream of the light-emitting chips in the emission direction. It is designed to guide light emitted by the pixels of the first and second groups in such a way that light from the pixels of the first group and light from the pixels of the second group are combined in second unit cells in a coupling-out plane, wherein the second unit cells each have an area that is smaller than the area of each of the first unit cells.

Abstract translation: 光学装置包括载体上的多个发光芯片。 在这种情况下，第一发光芯片分别包括第一组的像素，第二发光芯片分别包括第二组的像素。 第一和第二个第二发光芯片中的一个分别以平面方式布置在第一单元电池中。 此外，提供了一种光学元件，其设置在发光方向上的发光芯片的下游。 其被设计成引导由第一组和第二组的像素发射的光，使得来自第一组的像素的光和来自第二组的像素的光在耦合输出平面中的第二单元中组合 其中，所述第二单位电池各自具有小于所述第一单元电池中的每一个的面积的面积。

公开(公告)号：US20160013380A1

公开(公告)日：2016-01-14

申请号：US14769060

申请日：2014-01-15

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jürgen Moosburger ,  Thomas Schwarz ,  Hans-Jürgen Lugauer ,  Tansen Varghese ,  Stefan Illek

IPC: H01L33/58 ,  H01L33/54 ,  H01L21/78 ,  H01L25/00 ,  H01L25/075 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L33/58 ,  H01L21/78 ,  H01L25/0753 ,  H01L25/50 ,  H01L33/005 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.

Abstract translation: 本申请涉及一种制造光电子部件的方法。 通过该方法制造光电子。 光电子半导体芯片具有第一表面。 牺牲层沉积在第一表面上。 光电子半导体芯片至少部分地嵌入在模具体中并且牺牲层被去除。

公开(公告)号：US20150380602A1

公开(公告)日：2015-12-31

申请号：US14767634

申请日：2014-02-06

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Thomas Schwarz ,  Hans-Jürgen Lugauer ,  Jürgen Moosburger ,  Stefan Illek ,  Tansen Varghese ,  Matthias Sabathil

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/62 ,  H01L33/48

CPC classification number: H01L33/0095 ,  H01L33/483 ,  H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.

Abstract translation: 制造光电子部件的方法包括提供具有载体表面的载体，载体表面的第一侧向部分相对于载体表面的第二侧向部分升高; 在载体表面上布置具有第一表面和第二表面的光电子半导体芯片，其中第一表面面向载体表面; 并且形成具有朝向所述载体表面的上侧和与所述上侧相对的下侧的成型体，所述半导体芯片至少部分地嵌入所述模制体中。