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公开(公告)号：US11411137B2
公开(公告)日：2022-08-09
申请号：US16075949
申请日：2017-02-06
Applicant: The Regents of the University of California
Inventor： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
Abstract: A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
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公开(公告)号：US11217722B2
公开(公告)日：2022-01-04
申请号：US15743023
申请日：2016-07-11
Applicant: The Regents of the University of California
Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L21/02 , H01L33/00 , H01L33/32 , H01L33/14 , H01L21/00 , H01L31/0304 , C30B23/02 , C30B29/68 , H01S5/40 , C30B25/20 , H01L33/04 , C30B29/40 , H01S5/30 , H01L31/147 , H01L33/06 , H01S5/026 , H01S5/183 , H01S5/343
Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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公开(公告)号：US10985293B2
公开(公告)日：2021-04-20
申请号：US16561366
申请日：2019-09-05
Inventor： Tetsuo Fujii , Yan Gao , Evelyn L. Hu , Shuji Nakamura
Abstract: A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.
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公开(公告)号：US20210104504A1
公开(公告)日：2021-04-08
申请号：US16325709
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Erin C. Young , Charles Forman , John T. Leonard , SeungGeun Lee , Dan Cohen , Robert M. Farrell , Michael Iza , Burhan Saifaddin , Abdullah Almogbel , Humberto Foronda , James S. Speck , Steven P. DenBaars , Shuji Nakamura
Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.
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公开(公告)号：US20200259314A1
公开(公告)日：2020-08-13
申请号：US16760286
申请日：2018-10-31
Applicant: The Regents of the University of California
Inventor： Jared Kearns , Charles Forman , Dan Cohen , Kenneth S. Kosik , Shuji Nakamura
Abstract: A sensing apparatus, an illumination system, and a data communication system including a Vertical Cavity Surface Emitting Laser (VCSEL) or VCSEL array.
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Patent Agency Ranking
公开(公告)号：US10454010B1
公开(公告)日：2019-10-22
申请号：US16422323
申请日：2019-05-24
Applicant: The Regents of the University of California
Inventor： Shuji Nakamura , Steven P. DenBaars , Hirokuni Asamizu
Abstract: A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction.
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公开(公告)号：US20190207043A1
公开(公告)日：2019-07-04
申请号：US16325246
申请日：2017-08-17
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Benjamin P. Yonkee , Asad J. Mughal , David Hwang , Erin C. Young , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L31/0304 , H01L33/00 , H01L21/02 , H01L33/32
CPC classification number: H01L31/03044 , H01L21/0254 , H01L21/02579 , H01L33/007 , H01L33/32 , Y02E10/544
Abstract: A physical vapor deposition (e.g., sputter deposition) method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and electron cyclotron resonance (ECR) sputtering to grow one or more tunnel junctions. In another method, the surface of the p-type layer is treated before deposition of the tunnel junction on the p-type layer. In yet another method, the whole device (including tunnel junction) is grown using MOCVD and the p-type layers of the III-nitride material are reactivated by lateral diffusion of hydrogen through mesa sidewalls in the III-nitride material, with one or more lateral dimensions of the mesa that are less than or equal to about 200 μm. A flip chip display device is also disclosed.
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公开(公告)号：US20190074404A1
公开(公告)日：2019-03-07
申请号：US15743023
申请日：2016-07-11
Applicant: The Regents of the University of California
Inventor： Erin C. Young , Benjamin P. Yonkee , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC: H01L33/00 , H01L33/06 , H01L33/32 , H01L31/147
Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.
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公开(公告)号：US09917422B2
公开(公告)日：2018-03-13
申请号：US14721729
申请日：2015-05-26
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Po Shan Hsu , Kathryn M. Kelchner , Robert M. Farrell , Daniel A. Haeger , Hiroaki Ohta , Anurag Tyagi , Shuji Nakamura , Steven P. DenBaars , James S. Speck
IPC: H01S5/00 , H01S5/343 , B82Y20/00 , H01L21/02 , H01S5/32 , H01L31/0304 , H01L31/036 , H01L31/0735 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/20 , H01S5/22 , H01S5/30 , H01S5/34
CPC classification number: H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L31/03044 , H01L31/036 , H01L31/0735 , H01L33/0025 , H01L33/0045 , H01L33/06 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/2009 , H01S5/2031 , H01S5/22 , H01S5/3063 , H01S5/3202 , H01S5/3404 , H01S2304/04
Abstract: An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15
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60.发明授权公开(公告)号：US09640947B2
公开(公告)日：2017-05-02
申请号：US14820258
申请日：2015-08-06
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Casey O. Holder , Daniel F. Feezell , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC: H01S5/183 , H01S5/10 , H01S5/343 , B82Y20/00 , H01S5/065 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/42
CPC classification number: H01S5/18355 , B82Y20/00 , H01S5/005 , H01S5/0215 , H01S5/0217 , H01S5/0425 , H01S5/0654 , H01S5/1039 , H01S5/183 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2009 , H01S5/209 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/176
Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
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