公开(公告)号：US07339277B2

公开(公告)日：2008-03-04

申请号：US11059469

申请日：2005-02-16

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H05K1/16

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域中，第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US07298050B2

公开(公告)日：2007-11-20

申请号：US11258420

申请日：2005-10-26

申请人： Kazuaki Kurihara ,  Takeshi Shioga ,  John D. Baniecki

发明人： Kazuaki Kurihara ,  Takeshi Shioga ,  John D. Baniecki

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L23/66 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/6835 ,  H01L21/76831 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/50 ,  H01L24/16 ,  H01L24/81 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/05091 ,  H01L2224/05096 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13018 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/14051 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19106 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device is disclosed that includes an interposer and a semiconductor chip. The interposer includes a Si substrate; multiple through vias provided through an insulating material in corresponding through holes passing through the Si substrate; a thin film capacitor provided on a first main surface of the Si substrate so as to be electrically connected to the through vias; and multiple external connection terminals provided on a second main surface of the Si substrate so as to be electrically connected to the through vias. The second main surface faces away from the first main surface. The semiconductor chip is provided on one of the first main surface and the second main surface so as to be electrically connected to the through vias. The Si substrate has a thickness less than the diameter of the through holes.

摘要翻译： 公开了一种包括插入器和半导体芯片的半导体器件。 插入器包括Si衬底; 通过穿过Si衬底的相应通孔中的绝缘材料提供的多个通孔; 设置在所述Si衬底的第一主表面上以便与所述通孔电连接的薄膜电容器; 以及设置在Si衬底的第二主表面上的多个外部连接端子，以便电连接到通孔。 第二主表面远离第一主表面。 半导体芯片设置在第一主表面和第二主表面中的一个上，以便与通孔电连接。 Si衬底的厚度小于通孔的直径。

公开(公告)号：US20070031590A1

公开(公告)日：2007-02-08

申请号：US11580872

申请日：2006-10-16

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： B05D5/12

CPC分类号： H01L28/56 ,  H01G4/008 ,  H01G4/1209 ,  H01G4/33 ,  H01L27/016 ,  H01L28/65

摘要： The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.

摘要翻译： 本发明包括以下步骤：（a）经由粘合增强层在基板上形成第一电极，（b）形成含有层叠膜的电容绝缘膜，其中非晶绝缘膜和多晶电介质膜经由 波形界面，通过在第一电极上顺序并连续地形成由相同材料制成的非晶介质膜和多晶电介质膜，（c）在电容器绝缘膜上形成第二电极，以及（d）退火步骤 电容器绝缘膜在氧气氛中。

公开(公告)号：US20060211212A1

公开(公告)日：2006-09-21

申请号：US11168547

申请日：2005-06-29

申请人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

发明人： John Baniecki ,  Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01L21/20

CPC分类号： H01L27/016 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/31658 ,  H01L21/31691 ,  H01L28/55 ,  H01L28/65 ,  H01L2224/16227 ,  H01L2924/15192 ,  H01L2924/15312 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19106

摘要： A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16b formed on the lower protection insulating film 16a and having a wider energy band gap than the lower protection insulating film 16a.

摘要翻译： 电容性元件包括基底构件10，形成在基底构件10上的下面的绝缘膜11，通过在下面的绝缘膜11上依次形成下部电极13，电容器电介质膜14和上部电极15而构成的电容器Q 形成在上电极15上以覆盖电容器Q的至少一部分的下保护绝缘膜16a，以及形成在下保护绝缘膜16a上的上保护绝缘膜16b，其具有比 下保护绝缘膜16a。

公开(公告)号：US06873038B2

公开(公告)日：2005-03-29

申请号：US10629761

申请日：2003-07-30

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L23/498 ,  H01L23/50 ,  H01L23/522 ,  H01L23/64 ,  H01L27/08 ,  H01L21/44

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域中，第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US06624501B2

公开(公告)日：2003-09-23

申请号：US09956944

申请日：2001-09-21

申请人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Karasawa ,  Kazuaki Kurihara

IPC分类号： H01L2900

CPC分类号： H01L27/0805 ,  H01L21/76885 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/49822 ,  H01L23/50 ,  H01L23/5223 ,  H01L23/642 ,  H01L24/05 ,  H01L24/06 ,  H01L24/94 ,  H01L24/97 ,  H01L25/16 ,  H01L28/55 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/06051 ,  H01L2224/14051 ,  H01L2224/14181 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/3011 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/1403

摘要： A capacitor comprises a first conducting film 12 formed on a substrate 10, a first dielectric film 14 formed on the first conducting film, a second conducting film 18 formed on the first dielectric film, a second dielectric film 22 formed above the second conducting film, covering the edge of the second conducting film, a third conducting film 34 formed above the second dielectric film, covering a part of the second dielectric film covering the edge of the second conducting film. The capacitor further comprises an insulation film 28 covering the edge of the second conducing film or the part of the second dielectric film. An effective thickness of the insulation film between the second conducting film and the third conducing film in the region near the edge of the second conducting film can be increased, whereby concentration of electric fields in the region near the edge of the second conducting film. Consequently, the capacitor can have large capacitance without lowering voltage resistance.

摘要翻译： 电容器包括形成在基板10上的第一导电膜12，形成在第一导电膜上的第一电介质膜14，形成在第一电介质膜上的第二导电膜18，形成在第二导电膜上方的第二电介质膜22， 覆盖第二导电膜的边缘，形成在第二电介质膜上方的第三导电膜34，覆盖覆盖第二导电膜边缘的第二电介质膜的一部分。 电容器还包括覆盖第二导电膜的边缘或第二电介质膜的一部分的绝缘膜28。 在第二导电膜的边缘附近的区域内的第二导电膜和第三导电膜之间的绝缘膜的有效厚度可以增加，由此在第二导电膜的边缘附近的区域中的电场浓度。 因此，电容器可以具有大的电容而不降低电阻。

公开(公告)号：US08474126B2

公开(公告)日：2013-07-02

申请号：US13206042

申请日：2011-08-09

申请人： Takeshi Shioga ,  Kazuaki Kurihara

发明人： Takeshi Shioga ,  Kazuaki Kurihara

IPC分类号： H01S4/00

CPC分类号： H01L23/642 ,  H01G9/012 ,  H01G9/048 ,  H01G9/15 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49144 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A manufacturing method of a semiconductor device include forming a capacitor by forming an oxide film on a surface of a valve metal based on anodic oxidization and by forming a conductive part made of a conductive material on the oxide film; adhering the capacitor on a semiconductor element mounted on a supporting substrate; and coupling the capacitor to the supporting substrate via an outside connection terminal.

摘要翻译： 半导体器件的制造方法包括通过在基于阳极氧化的阀金属的表面上形成氧化膜并且在氧化膜上形成由导电材料制成的导电部分来形成电容器; 将电容器粘附在安装在支撑基板上的半导体元件上; 以及经由外部连接端子将所述电容器耦合到所述支撑基板。

公开(公告)号：US07778009B2

公开(公告)日：2010-08-17

申请号：US11698946

申请日：2007-01-29

申请人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

发明人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

IPC分类号： H01G4/06 ,  H01G4/228 ,  H01G4/005

CPC分类号： H01G4/228 ,  H01G4/33 ,  H01L2224/05001 ,  H01L2224/05016 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/13 ,  H01L2924/00014

摘要： A thin-film capacitor element having two conductive films and a dielectric film sandwiched therebetween is provided above a substrate. An inorganic protective film covering the thin-film capacitor element and having a second opening exposing at least a part of the conductive films is provided. An organic protective film covering the thin-film capacitor element from above the inorganic protective film and having a first opening therein, which is larger than the second opening and exposes the second opening, is provided. Besides, a bump connected with the conductive films via the first opening and the second opening is provided.

摘要翻译： 具有两个导电膜和夹在其间的介电膜的薄膜电容器元件设置在基板的上方。 提供了覆盖薄膜电容器元件并具有暴露至少一部分导电膜的第二开口的无机保护膜。 提供了一种有机保护膜，其从无机保护膜上方覆盖薄膜电容器元件，并且其中具有大于第二开口并暴露第二开口的第一开口。 此外，提供了通过第一开口和第二开口与导电膜连接的凸块。

公开(公告)号：US20080073110A1

公开(公告)日：2008-03-27

申请号：US11902251

申请日：2007-09-20

申请人： Takeshi Shioga ,  Kazuaki Kurihara ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi

发明人： Takeshi Shioga ,  Kazuaki Kurihara ,  Kanae Nakagawa ,  Taiji Sakai ,  Masataka Mizukoshi

IPC分类号： H05K1/16 ,  H05K3/30

CPC分类号： H05K1/162 ,  H01L21/486 ,  H01L23/15 ,  H01L23/498 ,  H01L23/49827 ,  H01L23/50 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K1/112 ,  H05K3/4605 ,  H05K2201/0179 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09627 ,  H05K2201/10378 ,  Y10T29/49002 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The interposer includes a glass substrate 46 with first through-electrodes 47 buried in; a plurality of resin layers 68, 20, 32 supported by the glass substrate; thin film capacitors 18a, 18b buried between a first resin layer 68 of the plural resin layers and a second resin layer 20 of the plural resin layers and including the first capacitor electrodes 12a, 12b, the second capacitor electrodes 16 opposed to the first capacitor electrodes 12a, 12b, and a dielectric thin film 14 of a relative dielectric constant of 200 or above formed between the first capacitor electrode 12a, 12b and the second capacitor electrode 16, and the second through-electrodes 77a, 77b penetrating the plural resin layers 68, 20, 32, electrically connected to the first through-electrode 47 and electrically connected to the first capacitor electrode 12a, 12b or the second capacitor electrode 16.

摘要翻译： 插入件包括：第一贯通电极47被埋入的玻璃基板46; 由玻璃基板支撑的多个树脂层68,20,32; 埋在多个树脂层的第一树脂层68和多个树脂层的第二树脂层20之间并且包括第一电容器电极12a，12b的第二电容器电极16的薄膜电容器18a，18b， 形成在第一电容器电极12 a，12 b和第二电容器电极16之间的相对介电常数为200或更大的第一电容器电极12a，12b和电介质薄膜14，以及第二贯通电极77 a，77b穿透电连接到第一通孔47并与第一电容器电极12a，2b或第二电容器电极16电连接的多个树脂层68,20,32。

公开(公告)号：US20070176175A1

公开(公告)日：2007-08-02

申请号：US11698946

申请日：2007-01-29

申请人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

发明人： Takeshi Shioga ,  Masatoshi Ishii ,  Kazuaki Kurihara ,  Teru Nakanishi ,  Masataka Mizukoshi

IPC分类号： H01L29/08

CPC分类号： H01G4/228 ,  H01G4/33 ,  H01L2224/05001 ,  H01L2224/05016 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/13 ,  H01L2924/00014

摘要： A thin-film capacitor element having two conductive films and a dielectric film sandwiched therebetween is provided above a substrate. An inorganic protective film covering the thin-film capacitor element and having a second opening exposing at least a part of the conductive films is provided. An organic protective film covering the thin-film capacitor element from above the inorganic protective film and having a first opening therein, which is larger than the second opening and exposes the second opening, is provided. Besides, a bump connected with the conductive films via the first opening and the second opening is provided.

摘要翻译： 具有两个导电膜和夹在其间的介电膜的薄膜电容器元件设置在基板的上方。 提供了覆盖薄膜电容器元件并具有暴露至少一部分导电膜的第二开口的无机保护膜。 提供了一种有机保护膜，其从无机保护膜上方覆盖薄膜电容器元件，并且其中具有大于第二开口并暴露第二开口的第一开口。 此外，提供了通过第一开口和第二开口与导电膜连接的凸块。