摘要:
Coupling reliability of a passive component is improved to increase the reliability of a semiconductor device. A first through hole is formed in a first electrode part of a first plate-like lead, and a second through hole is formed in a second electrode part of a second plate-like lead. As a result, at the first electrode part of the first plate-like lead, one external terminal of the passive component can be coupled to the first electrode parts on both sides of the first through hole while being laid across the first through hole. Also, at the second electrode part of the second plate-like lead, the other external terminal of the passive component can be coupled to the second electrode parts on both sides of the second through hole while being laid across the second through hole. Accordingly, at central portions both in the longitudinal and width directions of the passive component, the passive component is surrounded by sealing members. As a result, thermal stress applied to jointing materials such as solder can be reduced, improving the reliability of the semiconductor device (semiconductor package).
摘要:
A semiconductor chip is sealed by resin without covering an outer terminal of a semiconductor device having a power transistor. A semiconductor chip having a power transistor is housed within a recess of a metal cap while a drain electrode on a first surface of the semiconductor chip is bonded to a bottom of the recess via a connection material. A gate electrode and a source electrode are formed on a second surface opposite to the first surface of the semiconductor chip, and the gate electrode and the source electrode are bonded with metal plate terminals 6G, 6S via connection materials 5b, 5c. In addition, the semiconductor chip is sealed by a resin sealing body with mounting-surfaces of the metal plate terminals 6G, 6S being exposed. Mounting surfaces of the metal plate terminals 6G, 6S and a third part of the metal cap are bonded to electrodes on a mounting board 10 via connection materials 5e, 5f and 5g.
摘要:
The present invention provides a semiconductor device capable of suppressing degradation in connection reliability due to the decrease in thickness of a conductive adhesive caused by the movement of a connecting plate in a semiconductor device to which a power transistor is mounted. A step is provided in the thin part of the connecting plate connected to a lead post to lock the connecting plate by contacting the step to the tip of the lead post. Alternatively, a groove is provided in the thin part of the connecting plate to lock the connecting plate by connecting the lead post to only the part of the connecting plate on the tip side from the groove.
摘要:
A lead frame and a semiconductor device wherein a through hole is formed in the center of a semiconductor chip-mounting surface of a chip pad at the center of the lead frame, the through hole being tapered or being one which corresponds to a surface area that is greater on the surface of the chip-mounting surface of the chip pad than on the surface of the side opposite to the chip-mounting surface thereof. This prevents the occurrence of cracks in the sealing plastic portion in the step of reflow soldering of the lead frame to the substrate.
摘要:
The plastic encapsulated semiconductor device according to the present invention has a semiconductor chip, leads, and members for electrically connecting these parts to each other. A part of leads, the semiconductor chip and the connecting members are encapsulated with a plastic to form a package. The plate type plastic fins formed on the surface of and integrally with the package are divided in two directions perpendicular to each other thereby forming, for example, rows and columns of fins or fin segments, on the package surface. Therefore, the semiconductor device according to the present invention can be molded easily by a transfer molding. It has a high reliability with respect to the prevention of cracks in the plastic, and a low thermal resistance, and is most suitably used to obtain a high-density package mounting structure.
摘要:
A lead frame having a plurality of inner leads and outer leads, said outer leads being subjected to surface treatment for improving solder wettability at an end portion and to sruface treatment for suppressing solder wettability at least at a portion neighboring to the end portion, or said outer leads being bent 4 times or more, is effective for improving thermal fatigue life and reliability when applied to a semi-conductor device.
摘要:
A lead frame and an electronic device incorporating the lead frame wherein the lead frame includes a chip support and a plurality of leads arranged around the chip support with each of the plurality of leads having one end disposed proximate to the chip support. The one end of at least one of the plurality of leads includes a first lead portion extending in a direction toward the chip support and a second lead portion contiguous with the first lead portion. The second lead portion extends in a direction away from the chip support so that the one of the lead has a bent shape.