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89 条记录 (耗时 0.037 秒)

    Method for fabricating GaN field emitter arrays
    63.
    发明授权
    Method for fabricating GaN field emitter arrays 有权
    制造GaN场发射极阵列的方法

    公开(公告)号：US06579735B1

    公开(公告)日：2003-06-17

    申请号：US09998336

    申请日：2001-12-03

    申请人： Linda T. Romano ,  David K. Biegelsen

    发明人： Linda T. Romano ,  David K. Biegelsen

    IPC分类号： H01L2100

    CPC分类号： H01J1/3042 ,  H01J9/025

    摘要： An improved nanotip structure and method for forming the nanotip structure and a display system using the improved nanotip structure is described. The described nanotip is formed from a semiconductor having a crystalline structure such as gallium nitride. The crystalline structure preferably forms dislocations oriented in the direction of the nanotips. One method of forming the nanotip structure uses the relatively slow etching rates that occur around the dislocations compared to the faster etch rates that occur in other parts of the semiconductor structure. The slower etching around dislocations enables the formation of relatively high aspect ratio nanotips in the dislocation area.

    摘要翻译： 描述了用于形成纳米尖端结构的改进的纳米尖端结构和方法以及使用改进的纳米尖端结构的显示系统。 所描述的纳米尖端由具有诸如氮化镓的晶体结构的半导体形成。 晶体结构优选地形成在纳米尖端方向上取向的位错。 与在半导体结构的其它部分中发生的更快的蚀刻速率相比，形成纳米尖端结构的一种方法使用在位错周围发生的相对慢的蚀刻速率。 在位错周围较慢的蚀刻使得能够在位错区域中形成相对高的纵横比的纳米尖端。

    Fabrication of group III-V nitrides on mesas
    65.
    发明授权
    Fabrication of group III-V nitrides on mesas 失效
    在台面上制备III-V族氮化物

    公开(公告)号：US06163557A

    公开(公告)日：2000-12-19

    申请号：US82154

    申请日：1998-05-21

    申请人： Clarence J. Dunnrowicz ,  Linda T. Romano ,  David P. Bour

    发明人： Clarence J. Dunnrowicz ,  Linda T. Romano ,  David P. Bour

    IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L31/0312 ,  H01S5/00

    CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/3202 ,  H01S5/32341

    摘要： Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes.

    摘要翻译： III-V族氮化物薄膜制造在图案化的基板上，例如蓝宝石衬底上，或者在生长在衬底上的III-V族氮化物层上图案化的台面上。 台面为外延生长的III-V族氮化物薄膜提供减少的面积表面，以减少薄膜中的热薄膜应力以减少开裂。 其上生长膜的台面的表面的尺寸和尺寸被定向以减少可以在台面上生长的薄膜裂纹平面的数量。 膜的进一步裂解减少可以通过使基材变薄以形成膜来实现。 在薄膜处降低的基底厚度降低了薄膜中的热膨胀失配拉伸应力。 台面可以减少或消除在台面上生长的GaN或AlGaN外延膜中的裂纹的发生，AlGaN膜中铝的百分比高达约18％。 改进的III-V族III族氮化物薄膜可用于包括LED和边缘和表面发射激光二极管在内的光电器件。

    Epitaxial Lift-Off and Wafer Reuse
    67.
    发明申请
    Epitaxial Lift-Off and Wafer Reuse 审中-公开
    外延提升和晶圆再利用

    公开(公告)号：US20120309172A1

    公开(公告)日：2012-12-06

    申请号：US13118900

    申请日：2011-05-31

    申请人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

    发明人： Linda T. Romano ,  David P. Bour ,  Richard J. Brown ,  Andrew P. Edwards ,  Isik C. Kizilyalli ,  Hui Nie ,  Thomas R. Prunty

    IPC分类号： H01L21/20

    CPC分类号： H01L21/2654 ,  H01L21/02002 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/0079

    摘要： A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer.

    摘要翻译： 根据本发明的实施例的重新使用III族氮化物生长衬底的方法包括在III族氮化物衬底上外延生长III族氮化物半导体结构。 III族氮化物半导体结构包括在牺牲层上生长的牺牲层和附加层。 牺牲层植入至少一种植入物种。 在注入的牺牲层处将III族氮化物衬底与附加层分离。 在一些实施例中，III族氮化物衬底是GaN，牺牲层是GaN，含铝的III族氮化物层或含铟的III族氮化物层。 在一些实施例中，通过蚀刻注入的牺牲层将III族氮化物衬底与附加层分离。

    III-nitride light emitting devices grown on templates to reduce strain
    69.
    发明授权
    III-nitride light emitting devices grown on templates to reduce strain 有权
    在模板上生长的III族氮化物发光器件以减少应变

    公开(公告)号：US07547908B2

    公开(公告)日：2009-06-16

    申请号：US11615834

    申请日：2006-12-22

    申请人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

    发明人： Patrick N. Grillot ,  Nathan F. Gardner ,  Werner K. Goetz ,  Linda T. Romano

    IPC分类号： H01L29/06

    CPC分类号： H01L33/007 ,  H01L31/184

    摘要： In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of a same composition as that layer and an in-plane lattice constant ain-plane corresponding to a lattice constant of that layer as grown in the structure. The amount of strain in a layer is |(ain-plane−abulk)|/abulk. In some embodiments, the strain in the light emitting layer is less than 1%.

    摘要翻译： 在III族氮化物发光器件中，包括发光层的器件层在设计成减小器件中特别是在发光层中的应变的模板上生长。 降低发光器件中的应变可以提高器件的性能。 模板可以在常规生长模板可获得的晶格常数的范围内扩展发光层中的晶格常数。 应变定义如下：给定层具有对应于与该层相同组成的自由材料的晶格常数的块状晶格常数吸收和对应于该层的晶格常数的面内晶格常数ain-平面 如在结构中生长。 一层中的应变量为|（ain-plane-abulk）| / abulk。 在一些实施方案中，发光层中的应变小于1％。