摘要:
A communication system includes a control unit, a switch and a diversity hand-over processing unit connected to the control unit and the switch for receiving, both a first communication signal received from a radio base station which outputs the hand-over instruction, and a second communication signal which receives it from another radio base station to which the communication signal will be hand-over to output one of the first and second communication signals to the associated interface circuit, and for transmitting the communication signal received through the radio base station from the mobile station on the reception side for communication to both the interface circuit associated with the radio base station as a source of hand-over and the interface circuit associated with the radio base station as a destination of hand-over. Thus, during the hand-over, the diversity hand-over processing unit transmits the communication signal from the mobile station on the reception side for communication to both the radio base station as a source of hand-over and the radio base station as a destination of hand-over so that the communication is established between the mobile station on the transmission side for communication and the mobile station as a destination of hand-over and on the reception side for communication.
摘要:
There is provided a field effect transistor including (a) an amorphous semiconductor layer made of amorphous silicon hydride containing impurities doped therein, (b) a semiconductor layer made of single crystal silicon having an electron affinity greater than that of the amorphous silicon hydride, formed on the amorphous semiconductor layer, (c) a gate insulating film formed on the semiconductor layer, and (d) a gate electrode formed on the gate insulating film. The amorphous semiconductor layer and the semiconductor layer cooperate with each other to thereby form a potential well at a junction therebetween. The above mentioned field effect transistor utilizes a difference in electron affinity between the amorphous semiconductor layer and the semiconductor layer to thereby make it possible to operate at a higher speed because carriers are not influenced by scattering of doped ions. In addition, the formation of a single crystal silicon layer on an amorphous silicon layer, which would be difficult to fabricate by epitaxial growth, can be accomplished by means of ion implantation, and can be operated in accordance with the operation principle of a conventional MOS transistor.
摘要:
As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要:
As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.
摘要:
A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.
摘要:
A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.
摘要:
A smoke-retardant polyisocyanurate foam which contains an organosilicate having hydroxypolyoxyalkylene group which is obtained by reacting a polyoxyalkyleneglycol with at least one of metallic silicon, halosilicon compounds and lower alkyl silicates.
摘要:
A tool radius adjusting device executes an operation for adjusting the tool radius of a boring holder in parallel with execution of a machining program for executing an operation of a spindle head and an operation of a tool changer. A carrier control unit determines whether the tool changer is executing a tool changing process. When the tool changing process is not being executed, the carrier control unit allows the carrier device to execute an operation for picking the boring holder out from the tool magazine and an operation for returning the boring holder, of which the tool radius has been adjusted, to the tool magazine.
摘要:
A live migration process between different locations is realized without migrating data stored in a storage area to another location. A network device, which is included in each of locations, for coupling to another one of the locations, the network device stores a program for realizing an access processing module for managing accesses, and coupling management information for managing a coupling relationship between the plurality of virtual machines and the plurality of storage areas, and wherein the access processing module is configured to: receive a notification to start a live migration process, refer to the coupling management information to identify a port for accessing a storage area allocated to a virtual machine; acquire an address of a transfer destination device to which an access request is transferred; generate conversion information; and control the access request based on the conversion information.
摘要:
A boring holder in a tool radius adjusting system is provided with a cutting blade and fine and coarse motion adjusting mechanisms each capable of adjusting the position of the cutting blade relative to a rotational axis of the boring holder. The tool radius adjusting system is provided with a tool radius measuring device for measuring the tool radius of the boring holder and a controller configured to calculate a compensation amount based on a tool radius measured by the tool radius measuring device and a target tool radius and to operate the fine and coarse motion adjusting mechanisms based on the compensation amount so that the tool radius is brought into agreement with the target tool radius.