公开(公告)号：US20060175601A1

公开(公告)日：2006-08-10

申请号：US11172408

申请日：2005-06-30

Applicant: Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

Inventor： Charles Lieber ,  Xiangfeng Duan ,  Yi Cui ,  Yu Huang ,  Mark Gudiksen ,  Lincoln Lauhon ,  Jianfang Wang ,  Hongkun Park ,  Qingqiao Wei ,  Wenjie Liang ,  David Smith ,  Deli Wang ,  Zhaohui Zhong

IPC: H01L31/109

CPC classification number: C30B29/60 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  G01N27/4146 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/73 ,  H01L31/0352 ,  H01L31/08 ,  H01L33/18 ,  H01L33/20 ,  H01L51/0048

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components. For example, semiconductor materials can be doped to form n-type and p-type semiconductor regions for making a variety of devices such as field effect transistors, bipolar transistors, complementary inverters, tunnel diodes, light emitting diodes, sensors, and the like.

公开(公告)号：US20060141211A1

公开(公告)日：2006-06-29

申请号：US11019259

申请日：2004-12-23

Applicant: Yu Huang ,  Min-Chung Lu

Inventor： Yu Huang ,  Min-Chung Lu

IPC: B32B3/10

CPC classification number: H05K3/445 ,  B32B3/266 ,  B32B15/06 ,  B32B15/18 ,  B32B15/20 ,  B32B2250/40 ,  B32B2307/202 ,  B32B2307/206 ,  B32B2307/302 ,  B32B2307/538 ,  B32B2457/08 ,  H05K1/056 ,  H05K3/382 ,  H05K2201/0355 ,  Y10T428/12986 ,  Y10T428/24322

Abstract: A highly heat-transferring substrate is manufactured by drilling holes on a metal material of high heat conductivity, such as aluminum; positioning the metal material between two copper foil layers; applying a highly heat-transferring gum between the metal material and the copper foil layers; and melting the gum using a high temperature produced during pressing the metal material and the copper foil layers together. The melted gum bonds the metal material to the copper foil layers and flows into the holes on the metal material to form an insulating coating, which allows the finished substrate to be drilled and plated without the risk of short circuit caused by contacted metal material and plated coating.

Abstract translation: 通过在诸如铝的高导热性金属材料上钻孔，制造高度传热的基板; 将金属材料定位在两个铜箔层之间; 在金属材料和铜箔层之间施加高度传热的胶; 并且使用在将金属材料和铜箔层压在一起时产生的高温来熔融口香糖。 熔融的胶将金属材料粘合到铜箔层上并流入金属材料上的孔中以形成绝缘涂层，这使得成品基材可以被钻孔和镀覆，而不会由接触的金属材料引起短路并且被电镀 涂层。

公开(公告)号：US20060111873A1

公开(公告)日：2006-05-25

申请号：US11267221

申请日：2005-11-04

Applicant: Yu Huang ,  Wu-Tung Cheng ,  Janusz Rajski

Inventor： Yu Huang ,  Wu-Tung Cheng ,  Janusz Rajski

IPC: G21C17/00

CPC classification number: G01R31/318547 ,  G06F11/267 ,  G06F11/27

Abstract: Methods, apparatus, and systems for performing fault diagnosis are disclosed herein. In one exemplary embodiment, a failure log is received comprising entries indicative of compressed test responses to chain patterns and compressed test responses to scan patterns. A faulty scan chain in the circuit-under-test is identified based at least in part on one or more of the entries indicative of the compressed test responses to chain patterns. One or more faulty scan cell candidates in the faulty scan chain are identified based at least in part on one or more of the entries indicative of the compressed test responses to scan patterns. The one or more identified scan cell candidates can be reported. Computer-readable media comprising computer-executable instructions for causing a computer to perform any of the disclosed methods are also provided. Likewise, computer-readable media storing lists of fault candidates identified by any of the disclosed methods are also provided.

Abstract translation: 本文公开了用于执行故障诊断的方法，装置和系统。 在一个示例性实施例中，接收到故障日志，其包括指示对链模式的压缩测试响应的条目和对扫描模式的压缩测试响应。 至少部分地基于指示压缩的测试对链模式的测试响应的一个或多个条目来识别被测电路中的有缺陷的扫描链。 至少部分地基于指示对扫描模式的压缩测试响应的一个或多个条目来识别故障扫描链中的一个或多个错误的扫描小区候选。 可以报​​告一个或多个识别的扫描单元候选。 还提供了包括用于使计算机执行任何所公开的方法的计算机可执行指令的计算机可读介质。 同样，还提供了存储通过任何所公开的方法识别的故障候选列表的计算机可读介质。

公开(公告)号：US20050164432A1

公开(公告)日：2005-07-28

申请号：US11082372

申请日：2005-03-17

Applicant: Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

Inventor： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC: H01L29/73 ,  C30B11/00 ,  C30B25/00 ,  G01N27/12 ,  G01N27/414 ,  G01N33/543 ,  G11C13/02 ,  H01L21/329 ,  H01L21/331 ,  H01L23/532 ,  H01L27/10 ,  H01L29/06 ,  H01L29/207 ,  H01L29/267 ,  H01L29/88 ,  H01L33/06 ,  H01L33/18 ,  H01L51/00 ,  H01L51/30 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

Abstract: A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US06919736B1

公开(公告)日：2005-07-19

申请号：US10620286

申请日：2003-07-14

Applicant: Om P. Agrawal ,  Bradley A. Sharpe-Geisler ,  Bai Nguyen ,  Yu Huang ,  Jack Wong

Inventor： Om P. Agrawal ,  Bradley A. Sharpe-Geisler ,  Bai Nguyen ,  Yu Huang ,  Jack Wong

IPC: G06F17/50 ,  H03K19/177

CPC classification number: H03K19/17796 ,  G06F17/5054

Abstract: A field programmable gate array (FPGA) has plural columns of run-time memory provided in each of one or more partitions. Each column of run-time memory has a plurality of configurable memory blocks (CMB's). Each CMB is programmably configurable at least into a shallow-and-widest mode where data words have a maximum bit width and into a deep-and-narrowest mode where data words have a minimum bit width. Each CMB spans plural interconnect buses and the bits of its widest data words are distributed among the spanned interconnect buses. When a deep-and-narrow mode is invoked, CMB's of alternate columns operate in complementary fashion so that bits of narrowed words from one CMB move through a first subset of the interconnect buses while bits of narrowed words from a second CMB, in an alternate column, move through a second subset of the interconnect buses, where the second subset is mutually exclusive of the first subset of the interconnect buses. On the other hand, when the shallow-and-widest mode is invoked, the bits of the wide words of CMB's in alternate columns shared interconnect buses on an overlapping basis. In one embodiment, the shared interconnect buses are tri-statable. Programmable joiners are provided for joining or disjoining the tri-statable interconnect buses of adjacent partitions.

Abstract translation: 现场可编程门阵列（FPGA）具有在一个或多个分区中的每一个中提供的多列运行时存储器。 每列运行时存储器具有多个可配置存储器块（CMB）。 每个CMB可编程地至少配置为浅和最宽的模式，其中数据字具有最大位宽度，并且成为数据字具有最小位宽度的最深和最窄模式。 每个CMB跨越多个互连总线，其最宽的数据字的位分布在跨接互连总线之间。 当调用深而窄的模式时，CMB的备用列以互补方式运行，使得来自一个CMB的窄字的位移动通过互连总线的第一子集，同时来自第二CMB的窄字的位置 列移动穿过互连总线的第二子集，其中第二子集与互连总线的第一子集相互排斥。 另一方面，当调用浅和最宽模式时，CMB在备用列中的宽字的位以重叠的基础共享互连总线。 在一个实施例中，共享互连总线是三态的。 可编程连接器用于连接或分离相邻分区的三态互连总线。

公开(公告)号：USD859506S1

公开(公告)日：2019-09-10

申请号：US29623396

申请日：2017-10-25

Applicant: Yu Huang

Designer： Yu Huang

公开(公告)号：US20190080012A1

公开(公告)日：2019-03-14

申请号：US16129453

申请日：2018-09-12

Applicant: Yu Huang ,  Fang Chen

Inventor： Yu Huang ,  Fang Chen

IPC: G06F17/30 ,  G06K9/00 ,  G06N3/08

Abstract: Various embodiments of a deep learning (DL)-based face perception engine for constructing, providing, and applying a highly-personalized face perception model for an individual through a deep learning process are disclosed. In some embodiments, a disclosed face perception engine includes a deep neural network configured for training a personalized face perception model for a unique individual based on a standard set of training images and a corresponding set of decisions on the set of training images provided by the unique individual. When sufficiently trained using the standard set of training images and the corresponding set of decisions, the personalized face perception model for the unique individual perceives a new face photo/image as if through the eyes of that unique individual. Hence, the trained face perception model can be used an “agent” or “representative” of the associated person in making very personal decisions, such as to decide if a given face photo/image includes a desirable face in the eyes of that person.

公开(公告)号：US09527803B2

公开(公告)日：2016-12-27

申请号：US14006468

申请日：2012-03-22

Applicant: Yu Huang ,  Ling Tong ,  Xueyan Zhu ,  Hanbin Shan ,  Zhedong Yuan ,  Xiong Yu

Inventor： Yu Huang ,  Ling Tong ,  Xueyan Zhu ,  Hanbin Shan ,  Zhedong Yuan ,  Xiong Yu

IPC: C07C231/24 ,  C07C233/22 ,  A61K9/48

CPC classification number: C07C233/22 ,  A61K9/4866 ,  C07C231/24 ,  C07C233/18

Abstract: The present invention provides a new crystalline form VII of agomelatine, its method of preparation, application and pharmaceutical composition. This new crystalline form offers high purity, a stable crystalline structure and good reproducibility, while its method of production lends itself well to large scale production. In terms of stability and purity, it is superior to the numerous crystalline forms which have hitherto been reported. As a result, the crystalline form VII of the present invention possesses advantages in pharmaceutical preparation.

Abstract translation: 本发明提供了一种新的结晶形式的阿莫西坦结晶形式VII，其制备方法，应用和药物组合物。 这种新的结晶形式提供高纯度，稳定的晶体结构和良好的再现性，而其生产方法适合大规模生产。 在稳定性和纯度方面，它优于迄今报道的许多结晶形式。 结果，本发明的结晶形式VII在药物制剂中具有优势。

公开(公告)号：US09434760B2

公开(公告)日：2016-09-06

申请号：US13884196

申请日：2011-11-04

Applicant: Min Li ,  Hanbin Shan ,  Yu Huang ,  Zhedong Yuan ,  Xiong Yu

Inventor： Min Li ,  Hanbin Shan ,  Yu Huang ,  Zhedong Yuan ,  Xiong Yu

IPC: A61K38/06 ,  C07K5/02 ,  C07D207/16 ,  C07D205/04 ,  C07D211/60 ,  A61K47/12 ,  A61K47/38 ,  A61K9/20 ,  A61K9/48

CPC classification number: C07K5/0215 ,  A61K9/2054 ,  A61K9/2059 ,  A61K9/4858 ,  A61K9/4866 ,  A61K38/06 ,  A61K47/12 ,  A61K47/38 ,  C07D205/04 ,  C07D207/16 ,  C07D211/60

Abstract: Provided are a compound of formula (I), pharmaceutically acceptable salts thereof, preparation methods and applications thereof for inhibiting thrombin, and applications in the treatment and prevention of thrombin-mediated and thrombin-related diseases.

Abstract translation: 提供式（I）的化合物，其药学上可接受的盐，其用于抑制凝血酶的制备方法和应用，以及在治疗和预防凝血酶介导的凝血酶相关疾病中的应用。

公开(公告)号：US09086459B2

公开(公告)日：2015-07-21

申请号：US12918986

申请日：2009-02-23

Applicant: Ruifeng Guo ,  Liyang Lai ,  Yu Huang ,  Wu-Tung Cheng

Inventor： Ruifeng Guo ,  Liyang Lai ,  Yu Huang ,  Wu-Tung Cheng

IPC: G01R31/28 ,  G01R31/3185 ,  G01R35/00

CPC classification number: G01R31/318583 ,  G01R31/318541 ,  G01R35/00

Abstract: A diagnosis technique to improve scan cell internal defect diagnostic resolution using scan cell internal fault models.

Abstract translation: 使用扫描单元内部故障模型提高扫描单元内部缺陷诊断分辨率的诊断技术。