公开(公告)号：US11975357B2

公开(公告)日：2024-05-07

申请号：US17547083

申请日：2021-12-09

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore ,  Ivo Raaijmakers

IPC: C23C16/06 ,  B05D3/10 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C18/06 ,  C23C18/12

CPC classification number: B05D3/107 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/18 ,  C23C16/28 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C18/06 ,  C23C18/1208 ,  C23C18/1212 ,  C23C18/1216 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/1245

Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

公开(公告)号：US20240142014A1

公开(公告)日：2024-05-02

申请号：US18382568

申请日：2023-10-23

Applicant: ASM IP Holding B.V.

Inventor： Leonard Rodriguez

IPC: F16K27/00

CPC classification number: F16K27/003

Abstract: Various embodiments of the present technology may provide a valve manifold having a plurality of tiers with various through-holes and channels. The plurality of tiers may be connected together such that the through-holes and channels form a single, continuous flow path.

公开(公告)号：US20240141486A1

公开(公告)日：2024-05-02

申请号：US18410370

申请日：2024-01-11

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Todd Robert Dunn ,  Michael Eugene Givens ,  Jereld Lee Winkler ,  Paul Ma ,  Eric Shero

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/50 ,  C23C16/52

CPC classification number: C23C16/45512 ,  C23C16/4408 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52

Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

公开(公告)号：US11971217B2

公开(公告)日：2024-04-30

申请号：US17844911

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Theodorus G. M. Oosterlaken ,  Lucian Jdira ,  Herbert Terhorst

IPC: F27B5/04 ,  F27B5/10 ,  F27B5/16 ,  F27B5/18 ,  F27D1/18 ,  F27D3/00

CPC classification number: F27B5/04 ,  F27B5/10 ,  F27B5/16 ,  F27B5/18 ,  F27D1/1858 ,  F27D3/0084

Abstract: Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

公开(公告)号：US11970769B2

公开(公告)日：2024-04-30

申请号：US17845150

申请日：2022-06-21

Applicant: ASM IP Holding B.V.

Inventor： Trigagema Gama ,  Ryu Nakano

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/56

CPC classification number: C23C16/402 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/4583 ,  C23C16/56

Abstract: Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

公开(公告)号：US20240133035A1

公开(公告)日：2024-04-25

申请号：US18402969

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Shiva K.T. Rajavelu Muralidhar ,  Sam Kim ,  Jeffrey Barrett Robinson ,  James King Wilson, JR. ,  Ninad Vijay Sonje

IPC: C23C16/46 ,  C23C16/44 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

CPC classification number: C23C16/466 ,  C23C16/4411 ,  C23C16/4586 ,  H01L21/67201 ,  H01L21/68757

Abstract: A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

公开(公告)号：US11965262B2

公开(公告)日：2024-04-23

申请号：US17092599

申请日：2020-11-09

Applicant: ASM IP Holding B.V.

Inventor： Yong Min Yoo ,  Jong Won Shon ,  Seung Woo Choi ,  Dong Seok Kang

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C25D11/02 ,  C25D11/04 ,  H01J37/32 ,  H01L21/67

CPC classification number: C25D11/04 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/4583 ,  C23C16/5096 ,  C25D11/022 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/6719 ,  H01L21/68735 ,  H01L21/68757 ,  H01J37/32477

Abstract: A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.

公开(公告)号：US20240123416A1

公开(公告)日：2024-04-18

申请号：US18378222

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： Leonard Rodriguez

IPC: B01J8/18 ,  B01J8/24

CPC classification number: B01J8/1809 ,  B01J8/24 ,  B01J2219/00209 ,  B01J2219/00225 ,  B01J2219/00761

Abstract: Vapor delivery apparatus configured for generating a gaseous precursor from solid source precursor particles in a fluidized bed are disclosed. In addition, vapor phase reactors including a vapor delivery apparatus including a fluidized bed of solid precursor are also disclosed. Methods for monitoring and a controlling a vapor delivery system including a fluidized bed also disclosed.

公开(公告)号：US11959173B2

公开(公告)日：2024-04-16

申请号：US17697079

申请日：2022-03-17

Applicant: ASM IP Holding B.V.

Inventor： Amir Kajbafvala ,  Yanfu Lu ,  Robinson James ,  Caleb Miskin

IPC: C23C16/48 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/00 ,  G01K7/10 ,  H01L29/66

CPC classification number: C23C16/482 ,  C23C16/24 ,  C23C16/30 ,  C23C16/52 ,  G01J5/0007 ,  G01K7/10 ,  H01L29/66742 ,  H01L29/66795

Abstract: A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.

公开(公告)号：US20240117494A1

公开(公告)日：2024-04-11

申请号：US18367480

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell ,  Viljami Pore

IPC: C23C16/513 ,  C23C16/455 ,  C23C16/515

CPC classification number: C23C16/513 ,  C23C16/45519 ,  C23C16/515

Abstract: The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method including providing a substrate having a gap in a reaction chamber, providing a first precursor including silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor includes at least one unsaturated carbon-carbon bond and at least one atom selected from oxygen and nitrogen. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one unsaturated bond is a double bond.