Apparatus for supplying chemical liquid

    公开(公告)号:US11890864B2

    公开(公告)日:2024-02-06

    申请号:US17366322

    申请日:2021-07-02

    申请人: SEMES CO., LTD

    摘要: An apparatus for supplying a chemical liquid may include a stage on which a substrate is placed, a chemical liquid discharging member and a direction changing member. The chemical liquid discharging member may supply the chemical liquid onto at least two first regions of the substrate for first pixels along a first direction. Additionally, the chemical liquid discharging member may supply the chemical liquid onto at least two second regions of the substrate for second pixels along a second direction. The direction changing member may change a direction of the substrate from the second direction to the first direction.

    DROPLET ANALYSIS UNIT AND SUBSTRATE TREATMENT APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240034055A1

    公开(公告)日:2024-02-01

    申请号:US18347241

    申请日:2023-07-05

    申请人: SEMES CO., LTD.

    IPC分类号: B41J2/045 B41J29/17

    摘要: A droplet analysis unit capable of measuring and digitizing the meniscus shape, motion, and position of ink droplets and a substrate treatment apparatus including the droplet analysis unit are provided. The substrate treatment apparatus includes: a process treatment unit supporting a substrate while the substrate is being treated; an inkjet head unit treating the substrate by ejecting a substrate treatment liquid onto the substrate using a plurality of nozzles; a gantry unit moving the inkjet head unit over the substrate; and a droplet analysis unit measuring a meniscus in each of the nozzles that is associated with the substrate treatment liquid, wherein the droplet analysis unit measures and quantifies three-dimensional (3D) information regarding the meniscus.

    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE

    公开(公告)号:US20240011158A1

    公开(公告)日:2024-01-11

    申请号:US18474493

    申请日:2023-09-26

    申请人: SEMES Co., Ltd.

    IPC分类号: C23C16/458 C23C16/455

    CPC分类号: C23C16/4584 C23C16/45565

    摘要: According to the disclosed substrate processing apparatus, a first bowl is located to correspond to a substrate, and a first chemical solution supply module supplies a first chemical solution while a support module rotates at a first speed, and a second bowl is located to correspond to the substrate, and a second chemical solution supply module supplies a second chemical solution at a first flow rate while a support module rotates at a second speed equal to or smaller than the first speed, and the second bowl is located to correspond to the substrate, and the second chemical solution supply module does not supply the second chemical solution or supplies the second chemical solution at a second flow rate smaller than the first flow rate while the support module rotates at a third speed smaller than the second speed.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20240006166A1

    公开(公告)日:2024-01-04

    申请号:US18332088

    申请日:2023-06-09

    申请人: SEMES CO., LTD.

    IPC分类号: H01J37/32

    摘要: Provided is a substrate processing apparatus and substrate processing method capable of processing a substrate by using plasma, the substrate processing apparatus including a process chamber providing an internal space where a substrate is processed, a spin chuck serving as a lower electrode, supporting the substrate in the internal space of the process chamber, and rotating the supported substrate, and a plasma generation unit mounted in an upper portion of the process chamber to face the spin chuck, including a discharge space where an upper electrode is provided, generating plasma by using a process gas supplied from outside, linearly ejecting the plasma onto the substrate rotated by the spin chuck, and controlling a density of the plasma to change along an extension direction of the linearly ejected plasma.

    SUBSTRATE PROCESSING APPARATUS
    67.
    发明公开

    公开(公告)号:US20240006160A1

    公开(公告)日:2024-01-04

    申请号:US18142442

    申请日:2023-05-02

    申请人: SEMES CO., LTD.

    IPC分类号: H01J37/32 B23K26/352

    摘要: Provided is a substrate processing apparatus including a chamber including a processing space; a support table provided within the processing space of the chamber and configured to support a substrate; a dielectric plate covering an opening in an upper wall of the chamber; a transparent electrode provided on the dielectric plate; a laser supply head configured to supply a laser beam toward the substrate supported on the support table via the transparent electrode and the dielectric plate; and a cooling device configured to cool the transparent electrode by injecting a cooling gas toward the transparent electrode.

    System for processing substrate
    70.
    发明授权

    公开(公告)号:US11856680B2

    公开(公告)日:2023-12-26

    申请号:US17243954

    申请日:2021-04-29

    申请人: SEMES CO., LTD.

    摘要: A substrate processing system capable of setting a stable reference ground level for electrical components while handling electrostatic discharge (ESD) is provided. The substrate processing system includes a first ground bar connected to a building ground; and a second ground bar connected to the building ground and physically separated from the first ground bar, wherein the first ground bar is connected to a first electrical component to set a ground level of the first electrical component, wherein the second ground bar is dedicated to a charged component, and the second ground bar is connected to the first charged component to set a path of the electrostatic discharge current generated by the first charged component.