公开(公告)号：US10168612B2

公开(公告)日：2019-01-01

申请号：US15375623

申请日：2016-12-12

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Richard Wistrom

IPC: G03F1/26 ,  G03F1/38 ,  G03F1/76 ,  G03F1/78 ,  G03F1/80

Abstract: Methods for manufacturing a photomask, photomask blanks, and photomasks used in chip fabrication. A phase-shift layer is formed on a mask blank, a hardmask layer is formed on the phase-shift layer, and a layer stack is formed on the hardmask layer to make a photomask blank. The layer stack includes a first layer comprised of a first material and a second layer comprised of a second material that can be etched selective to the first material. The first layer is thicker than the second layer, and the first layer is also thicker than the hardmask layer. The photomask blank may be used to make a photomask in which, during manufacture, the hardmask layer is used to pattern mask features in a chip area of the photomask and the thicker of the first layer or the second layer is used to pattern a frame of the photomask.

公开(公告)号：US20180284601A1

公开(公告)日：2018-10-04

申请号：US15470933

申请日：2017-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hao-Ming Chang ,  Chih-Ming Chen ,  Cheng-Ming Lin ,  Sheng-Chang Hsu ,  Shao-Chi Wei ,  Hsao Shih ,  Li-Chih Lu

IPC: G03F1/76 ,  H01L21/027 ,  G03F1/78 ,  G03F1/26 ,  G03F1/50

CPC classification number: G03F1/26 ,  G03F1/38 ,  H01L21/0274

Abstract: A method of fabricating a photomask includes providing a blank mask; removing a portion of the resist layer to form a patterned resist layer exposing a portion of the cooling layer; patterning the cooling layer by using the patterned resist layer as an etching mask; patterning the opaque layer; and removing the patterned resist layer and the patterned cooling layer. The blank mask includes a light-transmitting substrate and an opaque layer, a cooling layer, and a resist layer sequentially stacked thereon, wherein the cooling layer has a thermal conductivity ranging between 160 and 5000 and an effective atomic number ranging between 5 and 14.

公开(公告)号：US10073354B2

公开(公告)日：2018-09-11

申请号：US14706871

申请日：2015-05-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsueh-Yi Chung ,  Yung-Cheng Chen ,  Fei-Gwo Tsai ,  Chi-Hung Liao ,  Shih-Chi Fu ,  Wei-Ti Hsu ,  Jui-Ping Chuang ,  Tzong-Sheng Chang ,  Kuei-Shun Chen ,  Meng-Wei Chen

IPC: G03B27/32 ,  G03F7/20 ,  G03F1/70 ,  G03F1/78 ,  G03F1/50 ,  G03F1/68 ,  H01L21/66

CPC classification number: G03F7/70433 ,  G03F1/50 ,  G03F1/68 ,  G03F1/70 ,  G03F1/78 ,  G03F7/20 ,  G03F7/70141 ,  G03F7/70158 ,  G03F7/70716 ,  H01L22/30

Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

公开(公告)号：US10012900B2

公开(公告)日：2018-07-03

申请号：US15218284

申请日：2016-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-su Kim ,  Shuichi Tamamushi ,  In-kyun Shin ,  Sung-il Lee ,  Jin Choi

IPC: G03B27/32 ,  G03B27/52 ,  G06F17/50 ,  G21K5/00 ,  G03F1/70 ,  G03F7/20 ,  G03F1/78

CPC classification number: G03F1/70 ,  G03F1/78 ,  G03F7/2059 ,  G03F7/70616 ,  G03F7/70875

Abstract: A method of manufacturing a reticle, the method including preparing a substrate, determining position data of a pattern to be formed on the substrate, and setting a primary exposure condition to form the pattern; performing a primary exposure simulation regarding the substrate based on the position data of the pattern and the primary exposure condition; calculating a primary deformation rate of the substrate, which is generated in the primary exposure simulation; correcting the position data of the pattern based on the primary deformation rate of the substrate to provide a corrected position data of the pattern; and exposing the substrate under the primary exposure condition based on the corrected position data of the pattern.

公开(公告)号：US20180087010A1

公开(公告)日：2018-03-29

申请号：US15810134

申请日：2017-11-12

Applicant: FUJIFILM Corporation

Inventor： Toshiya TAKAHASHI ,  Yasushi TOYOSHIMA ,  Junya ABE ,  Hidehiro MOCHIZUKI

IPC: C11D7/50 ,  G03F1/78 ,  G03F1/82 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/039 ,  G03F7/038 ,  G03F1/50 ,  C11D7/26 ,  C11D7/34

CPC classification number: C11D7/5022 ,  C11D7/265 ,  C11D7/34 ,  G03F1/50 ,  G03F1/78 ,  G03F1/82 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/0758 ,  G03F7/16 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2037 ,  G03F7/322 ,  H01L21/027

Abstract: Provided is a pre-rinsing liquid used in a method including forming a resist film including an actinic ray-sensitive or radiation-sensitive composition on a substrate, and irradiating the resist film with actinic rays or radiation to form a pattern on the substrate, and used for subjecting the substrate to a pre-rinsing treatment before applying the actinic ray-sensitive or radiation-sensitive composition onto the substrate. The pre-rinsing liquid satisfies the following conditions (1) and (2): (1) the pre-rinsing liquid includes 80% by mass or more of an organic solvent with respect to the total mass of the pre-rinsing liquid, and (2) the organic solvent is at least one organic solvent selected from the group consisting of alcohols, cyclic ethers, glycol ethers, glycol ether acetates, hydrocarbons, ketones, lactones, and esters.

公开(公告)号：US20180046073A1

公开(公告)日：2018-02-15

申请号：US15234078

申请日：2016-08-11

Applicant: GLOBALFOUNDRIES INC.

Inventor： JED H. RANKIN ,  ADAM C. SMITH

IPC: G03F1/78 ,  H01L21/027

CPC classification number: G03F1/70 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/76 ,  G03F1/78 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2063 ,  G03F7/7025 ,  G06F17/50 ,  G06F17/5068 ,  G06F17/5081 ,  G06F2217/12 ,  H01J37/3174 ,  H01L21/0274 ,  Y10S430/143

Abstract: A method and system for: forming a first rectangular shape with photomask writing equipment, using a first sub-threshold dosage on a photoresist layer of a photomask substrate; forming an overlapping second rectangular shape with the photomask writing equipment using a second sub-threshold dosage on the photoresist layer, the second rectangular shape being rotated relative to the first rectangular shape to form one of: a hexagonal overlap area and an octagonal overlap area, that exposes the photoresist layer to at least a threshold dosage; and forming a photomask, based on developing the exposed photoresist layer, to provide optical transmission corresponding to the one of: the hexagonal overlap area of at least the threshold dosage and the octagonal overlap area of at least the threshold dosage, for use by a photolithography system to write any of a contact, a via, or a curvilinear shape on an integrated circuit substrate.

公开(公告)号：US09859100B2

公开(公告)日：2018-01-02

申请号：US15157278

申请日：2016-05-17

Applicant: D2S, Inc.

Inventor： Akira Fujimura ,  Kazuyuki Hagiwara ,  Robert C. Pack

IPC: H01J37/317 ,  H01J37/302 ,  G03F1/36 ,  G03F7/20 ,  G03F1/78

CPC classification number: H01J37/3174 ,  G03F1/36 ,  G03F1/78 ,  G03F7/2063 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31774 ,  H01J2237/31776

Abstract: A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.

公开(公告)号：US09791772B2

公开(公告)日：2017-10-17

申请号：US14084552

申请日：2013-11-19

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Guoxiang Ning ,  Paul Ackmann ,  Byoung Il Choi

IPC: G03F1/78 ,  G03F1/44

CPC classification number: G03F1/44

Abstract: Reticle and methods for forming a device or reticle are presented. A reticle is provided with a device pattern and a first monitoring pattern. The first monitoring pattern includes a plurality of first test cells having a first test cell area and a first test pattern. The first test cells have different first pitch ratios to an anchor pitch and the first test pattern fills the first test cell area of a first test cell. A wafer with a resist layer is exposed with a lithographic system using the reticle. The resist is developed to form a patterned resist layer on the wafer and the wafer is processed using the patterned resist layer.

公开(公告)号：US09720323B2

公开(公告)日：2017-08-01

申请号：US15044827

申请日：2016-02-16

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masaaki Kotake ,  Takayuki Fujiwara ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

IPC: G03F7/004 ,  G03F7/039 ,  G03F1/78 ,  C07C381/12 ,  C08F220/20 ,  C08F220/26 ,  H01L21/027 ,  G03F7/20 ,  C08F220/18

CPC classification number: G03F7/0392 ,  C07C381/12 ,  C08F220/18 ,  C08F220/20 ,  C08F220/26 ,  G03F1/78 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/2037 ,  H01L21/0271 ,  H01L21/0274

Abstract: A resist composition comprising a resin adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium or iodonium salt of nitrogen-containing carboxylic acid has a high resolution. By lithography, a pattern with minimal LER can be formed.

公开(公告)号：US09607808B2

公开(公告)日：2017-03-28

申请号：US13641120

申请日：2011-04-13

Applicant: Serdar Manakli

Inventor： Serdar Manakli

IPC: G03F7/00 ,  H01J37/31 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/20 ,  H01J37/317

CPC classification number: H01J37/31 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/2061 ,  G03F7/2063 ,  H01J37/3174

Abstract: A method of electron-beam lithography by direct writing solves the reliability of design of etched components through rounding of the corners of contiguous patterns, notably in patterns to be etched of critical dimension of the order of 35 nm. The method determines critical patterns, and correction patterns by subtracting patterns of corrections of dimensions and of locations as a function of rounding of external or internal corners to be corrected and etching of the corrected design. The corrections may be by a correction model taking account of the parameters of the critical patterns. A correction of the proximity effects specific to these methods is also performed, by resizing of edges of blocks to be etched in combination optimized by the energy latitude with a modulation of the radiated doses. A rescaling and negation functions and eRIF functions may be used to optimize the parameters and the realization of the extrusion.