-
公开(公告)号:US06232937B1
公开(公告)日:2001-05-15
申请号:US08884485
申请日:1997-06-27
申请人: Jeffrey Jacobsen , John C. C. Fan , Stephen A. Pombo , Matthew Zavracky , Rodney Bumgardner , Alan Richard , Wen-Foo Chern
发明人: Jeffrey Jacobsen , John C. C. Fan , Stephen A. Pombo , Matthew Zavracky , Rodney Bumgardner , Alan Richard , Wen-Foo Chern
IPC分类号: G09G336
CPC分类号: H04N7/142 , G02B25/002 , G09G3/001 , G09G3/3406 , G09G3/3614 , G09G3/3648 , G09G3/3659 , G09G3/3688 , G09G5/18 , G09G5/39 , G09G5/391 , G09G2300/0408 , G09G2310/0235 , G09G2310/0283 , G09G2310/063 , G09G2320/0209 , G09G2320/041 , G09G2330/021 , G09G2340/0407 , G09G2340/0492 , H04M1/0202 , H04M1/021 , H04M1/0214 , H04M1/0247 , H04M1/0254 , H04M1/0264 , H04M2250/20 , H04N9/3141
摘要: The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a hand held communication display device. The system has an alternating common voltage which allows reduced power consumption. In addition an internal heating system in the display allows the system to be used at low temperatures. The system can employ an LED illumination system and cellular communication or processor circuits within a compact housing to provide communication devices such as pagers, telephones, televisions, and hand held computer or card reader devices with a compact high resolution data and/or video display.
摘要翻译: 本发明涉及利用具有照明系统的小型高分辨率有源矩阵液晶显示器和放大光学系统来提供手持式通信显示装置的微型显示系统。 该系统具有交替的公共电压,可以降低功耗。 此外,显示器中的内部加热系统允许系统在低温下使用。 该系统可以使用紧凑壳体内的LED照明系统和蜂窝通信或处理器电路来提供具有紧凑的高分辨率数据和/或视频显示器的通信设备,例如寻呼机,电话机,电视机,以及手持计算机或读卡器设备。
-
公开(公告)号:US06232136B1
公开(公告)日:2001-05-15
申请号:US09056410
申请日:1998-04-06
IPC分类号: H01L2100
CPC分类号: H01L27/1266 , A61B3/113 , G02B5/30 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02F1/136277 , G02F2001/13613 , G02F2202/105 , G09G3/30 , G09G3/36 , G09G3/3607 , G09G3/3614 , G09G3/3648 , G09G2300/023 , G09G2300/0809 , G09G2300/0842 , G09G2320/0233 , G09G2320/041 , G09G2320/043 , G09G2340/0464 , G09G2370/042 , H01L21/8221 , H01L25/0756 , H01L27/0688 , H01L27/1214 , H01L27/1274 , H01L27/156 , H01L29/66772 , H01L29/786 , H01L29/78603 , H01L29/78648 , H01L29/78654 , H01L33/0062 , H01L2221/68359 , H01L2221/68363 , H01L2924/0002 , H01L2924/09701 , H04N5/70 , H04N5/7441 , H04N5/7491 , H04N9/3141 , H05B33/12 , H01L2924/00
摘要: A display panel is formed using essentially single crystal thin-film material that is transferred to substrates for display fabrication. The transfer includes the step of transferring the semiconductor regions onto a stretchable substrate. The resulting circuit panel can be incorporated into a display panel with a light emitting or liquid crystal material to provide the desired display.
摘要翻译: 使用基本上单晶薄膜材料形成显示面板,该材料被转印到用于显示器制造的衬底上。 转移包括将半导体区域转移到可拉伸基底上的步骤。 所得到的电路板可以结合到具有发光或液晶材料的显示面板中以提供期望的显示。
-
公开(公告)号:USD427587S
公开(公告)日:2000-07-04
申请号:US65765
申请日:1997-06-13
-
公开(公告)号:US5781164A
公开(公告)日:1998-07-14
申请号:US442808
申请日:1995-05-17
IPC分类号: G02F1/1362 , G09G3/36
CPC分类号: G09G3/3622 , G02F1/136277
摘要: A passive matrix display device obtains fast response times and high resolutions by fabricating the control circuitry and passive matrix electrodes together as a single monolithic device. The electrodes and the control circuitry are fabricated as an SOI structure on a substrate. The structure is removed from the substrate and transferred to a glass substrate using a lift-off and transfer process. Performance is further increased by incorporating an active addressing procedure instead of standard multiplex addressing.
摘要翻译: 无源矩阵显示装置通过将控制电路和无源矩阵电极一起制成单个单片装置来获得快速响应时间和高分辨率。 电极和控制电路在衬底上制造为SOI结构。 使用剥离和转移工艺将结构从衬底上移除并转移到玻璃衬底上。 通过结合主动寻址过程而不是标准多路复用寻址来进一步提高性能。
-
公开(公告)号:US5453405A
公开(公告)日:1995-09-26
申请号:US165025
申请日:1993-12-09
IPC分类号: A61B3/113 , G02B5/30 , G02B27/00 , G02B27/01 , G02F1/1333 , G02F1/1362 , G09G3/32 , G09G3/36 , H01L21/77 , H01L21/822 , H01L21/84 , H01L21/98 , H01L25/065 , H01L25/075 , H01L27/06 , H01L27/12 , H01L27/15 , H01L33/00 , H01L33/10 , H01L33/40 , H01L33/46 , H01S5/02 , H01S5/42 , H04N5/74 , H05B33/12 , H01L21/465
CPC分类号: H01L33/10 , G02B27/0093 , G02B27/017 , G02B27/0172 , G02F1/13454 , G09G3/36 , H01L21/8221 , H01L21/84 , H01L24/96 , H01L25/0756 , H01L25/50 , H01L27/0688 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L33/0062 , H04N5/7441 , H04N9/3141 , H05B33/12 , G02B2027/0132 , G02B2027/0138 , G02B2027/0187 , G02B2027/0198 , G02B5/30 , G02F1/13336 , G02F2202/105 , G09G2300/023 , G09G2370/042 , G09G3/32 , G09G3/3607 , G09G3/3648 , H01L2221/68359 , H01L2221/68363 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01051 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/09701 , H01L2924/10329 , H01L2924/10336 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/351 , H01L33/405 , H01L33/465 , H01S5/0217 , H01S5/423 , H04N5/7491 , Y10S438/928 , Y10S438/977
摘要: Light emitting diodes (LEDs) and LED bars and LED arrays formed of semiconductive material, such as III-V, and particularly AlGaAs/GaAs material, are formed in very thin structures using organometallic vapor deposition (OMCVD). Semiconductor p-n junctions are formed as deposited using carbon as the p-type impurity dopant. Various lift-off methods are described which permit back side processing when the growth substrate is removed and also enable device registration for LED bars and arrays to be maintained.
摘要翻译: 使用有机金属气相沉积(OMCVD)在非常薄的结构中形成由诸如III-V,特别是AlGaAs / GaAs材料的半导体材料形成的发光二极管(LED)和LED条和LED阵列。 使用碳作为p型杂质掺杂剂形成半导体p-n结。 描述了当生长衬底被去除时允许背面处理并且还使得能够维持LED条和阵列的器件配准的各种剥离方法。
-
公开(公告)号:US5328549A
公开(公告)日:1994-07-12
申请号:US845006
申请日:1992-03-03
CPC分类号: H01L31/0687 , C30B25/04 , C30B29/60 , C30B33/00 , H01L21/02381 , H01L21/02395 , H01L21/02433 , H01L21/02529 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02639 , H01L21/02647 , H01L21/2007 , H01L31/043 , H01L31/18 , H01L31/1804 , H01L31/184 , H01L2924/0002 , H01S5/0207 , H01S5/0217 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10S117/915 , Y10S438/98
摘要: A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
-
公开(公告)号:US5116427A
公开(公告)日:1992-05-26
申请号:US790141
申请日:1991-11-07
申请人: John C. C. Fan , Paul M. Zavracky
发明人: John C. C. Fan , Paul M. Zavracky
IPC分类号: H01L31/0224 , H01L31/0693
CPC分类号: H01L31/0693 , H01L31/022425 , H01L31/022433 , Y02E10/544
摘要: A photovoltaic device utilizing compound semiconductor materials that are stable when operated at high temperatures. Hostile environments, and in particular, thermally stressful environments such as those generated by use of light concentrating systems, require encapsulation of the device. Sealing of the photo-active junction, the conductive grid, the exposed semiconductor surfaces, and the pads contacting the grid away from the junction area provide such thermal stability. A heterojunction structure can be used along with barrier materials providing a conductive grid in contact with the photo-active surface thereby reducing interdiffusion of that surface with the conductive grid.
摘要翻译: 利用化合物半导体材料的光电器件在高温下运行时是稳定的。 敌对环境,特别是热应力环境,例如通过使用聚光系统产生的环境,需要封装设备。 光电连接点,导电栅格,暴露的半导体表面以及接触栅极远离接合区域的焊盘的密封提供了这种热稳定性。 异质结结构可以与提供与光活性表面接触的导电栅格的阻挡材料一起使用,从而减少该表面与导电栅格的相互扩散。
-
公开(公告)号:US4890895A
公开(公告)日:1990-01-02
申请号:US120021
申请日:1987-11-13
CPC分类号: G02B6/4204 , G02B6/4202 , G02B6/423 , G02B6/4246 , H01L33/0066 , G02B6/4231
摘要: An optical device formed on an Si substrate comprising: a III-V optical transmitter formed on the Si substrate, a silicon device formed in or on, the Si substrate and an alignment groove formed in the substrate for aligning an optical fiber with said transmitter.
摘要翻译: 一种形成在Si衬底上的光学器件,包括:形成在Si衬底上的III-V光发射器,形成在Si衬底中或之上的硅器件,以及形成在衬底中用于使光纤与所述发射器对准的对准沟槽。
-
公开(公告)号:US4514581A
公开(公告)日:1985-04-30
申请号:US440090
申请日:1982-11-08
申请人: John C. C. Fan , Carl O. Bozler
发明人: John C. C. Fan , Carl O. Bozler
IPC分类号: H01L31/0352 , H01L31/052 , H01L31/075 , H01L31/06
CPC分类号: H01L31/075 , H01L31/035281 , H01L31/0547 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要: Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub..alpha. and L.sub.m wherein t.sub..alpha. is the solar spectrum absorption length and L.sub.m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes mulitple passes through the thin semiconductor layers.
摘要翻译: 公开了基于低成本半导体(例如非晶硅)的太阳能电池的改进。 本发明的改进的太阳能电池具有厚度在0.1tα和Lm之间的超薄有源半导体层,其中tα是太阳光谱吸收长度,Lm是有源层中的光生少数电荷载流子的扩散长度。 后表面反射器具有70%或更大的太阳光谱反射率,使得不被直接通过有源层吸收的入射能量被反射另一遍。 本文所述的电池的最优选实施方案被成形为具有光捕获结构,使得光使多孔通过薄半导体层。
-
公开(公告)号:US4197141A
公开(公告)日:1980-04-08
申请号:US873987
申请日:1978-01-31
申请人: Carl O. Bozler , John C. C. Fan
发明人: Carl O. Bozler , John C. C. Fan
IPC分类号: H01L21/321 , H01L31/0368 , H01L31/18 , H01L31/04 , C25D5/00
CPC分类号: H01L21/321 , H01L31/0368 , H01L31/1868 , Y02E10/50 , Y02P70/521 , Y10T428/24802 , Y10T428/24868
摘要: A method of passivating imperfections, such as grain boundaries and/or dislocations, in semiconductor materials is disclosed which comprises selectively passing electrical current along the imperfections by employing the semiconductor material as an electrode in an electrolytic cell.
摘要翻译: 公开了一种在半导体材料中钝化诸如晶界和/或位错的缺陷的方法,其包括通过使用半导体材料作为电解槽中的电极选择性地沿着缺陷传递电流。
-
-
-
-
-
-
-
-
-