Matrix display systems
    74.
    发明授权
    Matrix display systems 失效
    矩阵显示系统

    公开(公告)号:US5781164A

    公开(公告)日:1998-07-14

    申请号:US442808

    申请日:1995-05-17

    IPC分类号: G02F1/1362 G09G3/36

    CPC分类号: G09G3/3622 G02F1/136277

    摘要: A passive matrix display device obtains fast response times and high resolutions by fabricating the control circuitry and passive matrix electrodes together as a single monolithic device. The electrodes and the control circuitry are fabricated as an SOI structure on a substrate. The structure is removed from the substrate and transferred to a glass substrate using a lift-off and transfer process. Performance is further increased by incorporating an active addressing procedure instead of standard multiplex addressing.

    摘要翻译: 无源矩阵显示装置通过将控制电路和无源矩阵电极一起制成单个单片装置来获得快速响应时间和高分辨率。 电极和控制电路在衬底上制造为SOI结构。 使用剥离和转移工艺将结构从衬底上移除并转移到玻璃衬底上。 通过结合主动寻址过程而不是标准多路复用寻址来进一步提高性能。

    High temperature photovoltaic cell
    77.
    发明授权
    High temperature photovoltaic cell 失效
    高温光伏电池

    公开(公告)号:US5116427A

    公开(公告)日:1992-05-26

    申请号:US790141

    申请日:1991-11-07

    IPC分类号: H01L31/0224 H01L31/0693

    摘要: A photovoltaic device utilizing compound semiconductor materials that are stable when operated at high temperatures. Hostile environments, and in particular, thermally stressful environments such as those generated by use of light concentrating systems, require encapsulation of the device. Sealing of the photo-active junction, the conductive grid, the exposed semiconductor surfaces, and the pads contacting the grid away from the junction area provide such thermal stability. A heterojunction structure can be used along with barrier materials providing a conductive grid in contact with the photo-active surface thereby reducing interdiffusion of that surface with the conductive grid.

    摘要翻译: 利用化合物半导体材料的光电器件在高温下运行时是稳定的。 敌对环境,特别是热应力环境,例如通过使用聚光系统产生的环境,需要封装设备。 光电连接点,导电栅格,暴露的半导体表面以及接触栅极远离接合区域的焊盘的密封提供了这种热稳定性。 异质结结构可以与提供与光活性表面接触的导电栅格的阻挡材料一起使用,从而减少该表面与导电栅格的相互扩散。

    Solar cells having ultrathin active layers
    79.
    发明授权
    Solar cells having ultrathin active layers 失效
    具有超薄活性层的太阳能电池

    公开(公告)号:US4514581A

    公开(公告)日:1985-04-30

    申请号:US440090

    申请日:1982-11-08

    摘要: Improvements in solar cells based upon low cost semiconductors, such as amorphous silicon, are disclosed. The improved solar cells of this invention have ultrathin active semiconductor layers having a thickness between 0.1 t.sub..alpha. and L.sub.m wherein t.sub..alpha. is the solar spectrum absorption length and L.sub.m is the diffusion length for photogenerated minority charge carriers in the active layer. The back surface reflector has a solar spectrum reflectivity of 70% or greater, so that incident energy not absorbed in a direct pass through the active layer is reflected for another pass. The most preferred embodiment of the cells described herein are shaped to have a light-trapping structure so that light makes mulitple passes through the thin semiconductor layers.

    摘要翻译: 公开了基于低成本半导体(例如非晶硅)的太阳能电池的改进。 本发明的改进的太阳能电池具有厚度在0.1tα和Lm之间的超薄有源半导体层,其中tα是太阳光谱吸收长度,Lm是有源层中的光生少数电荷载流子的扩散长度。 后表面反射器具有70%或更大的太阳光谱反射率,使得不被直接通过有源层吸收的入射能量被反射另一遍。 本文所述的电池的最优选实施方案被成形为具有光捕获结构,使得光使多孔通过薄半导体层。