公开(公告)号：US20060060968A1

公开(公告)日：2006-03-23

申请号：US11269053

申请日：2005-11-08

申请人： James Wark ,  Salman Akram

发明人： James Wark ,  Salman Akram

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  G01R1/06738 ,  H01L22/34 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/1601 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15787 ,  H05K3/325 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/10734 ,  Y10T29/49147 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A bumped semiconductor device contact structure is disclosed including at least one non-planar contact pad having a plurality of projections extending therefrom for contacting at least one solder ball of a bumped integrated circuit (IC) device, such as a bumped die and a bumped packaged IC device. The projections are arranged to make electrical contact with the solder balls of a bumped IC device without substantially deforming the solder ball. Accordingly, reflow of solder balls to reform the solder balls is not necessary with the contact pad of the present invention. Such a contact pad may be provided on various testing equipment such as probes and the like and may be used for both temporary and permanent connections. Also disclosed is an improved method of forming the contact pads by etching and deposition.

公开(公告)号：US20060055034A1

公开(公告)日：2006-03-16

申请号：US11268884

申请日：2005-11-08

申请人： James Wark ,  Salman Akram

发明人： James Wark ,  Salman Akram

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/10 ,  G01R1/06738 ,  H01L22/34 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/16 ,  H01L2224/1601 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15787 ,  H05K3/325 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/10734 ,  Y10T29/49147 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A bumped semiconductor device contact structure is disclosed including at least one non-planar contact pad having a plurality of projections extending therefrom for contacting at least one solder ball of a bumped integrated circuit (IC) device, such as a bumped die and a bumped packaged IC device. The projections are arranged to make electrical contact with the solder balls of a bumped IC device without substantially deforming the solder ball. Accordingly, reflow of solder balls to reform the solder balls is not necessary with the contact pad of the present invention. Such a contact pad may be provided on various testing equipment such as probes and the like and may be used for both temporary and permanent connections. Also disclosed is an improved method of forming the contact pads by etching and deposition.

公开(公告)号：US20050189646A1

公开(公告)日：2005-09-01

申请号：US11053082

申请日：2005-02-07

申请人： Salman Akram ,  James Wark

发明人： Salman Akram ,  James Wark

IPC分类号： H01L21/60 ,  H01L23/31 ,  H01L23/42 ,  H01L23/433 ,  H01L23/34

CPC分类号： H01L24/85 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/42 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48465 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/75 ,  H01L2224/81801 ,  H01L2224/83951 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00011 ,  H01L2224/78 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/85399

摘要： An apparatus and a method for providing a heat sink on an upper surface of a semiconductor chip by placing a heat-dissipating material thereon which forms a portion of a glob top. The apparatus comprises a semiconductor chip attached to and in electrical communication with a substrate. A barrier glob top material is applied to the edges of the semiconductor chip on the surface (“opposing surface”) opposite the surface attached to the substrate to form a wall around a periphery of the opposing surface of the semiconductor chip wherein the barrier glob top material also extends to contact and adhere to the substrate. The wall around the periphery of the opposing surface of the semiconductor chip forms a recess. A heat-dissipating glob top material is disposed within the recess to contact the opposing surface of the semiconductor chip.

公开(公告)号：US20060044773A1

公开(公告)日：2006-03-02

申请号：US11212986

申请日：2005-08-25

申请人： Salman Akram ,  David Hembree

发明人： Salman Akram ,  David Hembree

IPC分类号： H01R12/16

CPC分类号： H01L25/0657 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Methods and apparatuses for transferring heat from stacked microfeature devices are disclosed herein. In one embodiment, a microfeature device assembly comprises a support member having terminals and a first microelectronic die having first external contacts carried by the support member. The first external contacts are operatively coupled to the terminals on the support member. The assembly also includes a second microelectronic die having integrated circuitry and second external contacts electrically coupled to the first external contacts. The first die is between the support member and the second die. The assembly can further include a heat transfer unit between the first die and the second die. The heat transfer unit includes a first heat transfer portion, a second heat transfer portion, and a gap between the first and second heat transfer portions such that the first external contacts and the second external contacts are aligned with the gap.

摘要翻译： 本文公开了用于从堆叠的微特征装置传递热量的方法和装置。 在一个实施例中，微特征装置组件包括具有端子的支撑构件和具有由支撑构件承载的第一外部触点的第一微电子模具。 第一外部触点可操作地耦合到支撑构件上的端子。 组件还包括具有集成电路的第二微电子管芯和电耦合到第一外部触点的第二外部触头。 第一模具在支撑构件和第二模具之间。 组件还可以包括在第一模具和第二模具之间的传热单元。 传热单元包括第一传热部分，第二传热部分和第一和第二传热部分之间的间隙，使得第一外部接触部和第二外部接触部与间隙对准。

公开(公告)号：US20050247567A1

公开(公告)日：2005-11-10

申请号：US11183419

申请日：2005-07-15

申请人： Salman Akram ,  David Hembree

发明人： Salman Akram ,  David Hembree

IPC分类号： C25D5/08 ,  C25D7/12 ,  C25F7/00 ,  H01L21/00 ,  C25D5/00

CPC分类号： H01L21/67086 ,  C25D5/08 ,  C25D17/001 ,  C25F7/00 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6708

摘要： An apparatus and method for treating a substrate to deposit, clean or etch material on a substrate use a first horizontal chuck to which a plurality of substrates is attached and electrically charged. Spaced closely to the first horizontal chuck is a coextensive horizontal second chuck which receives and showers reaction solution over all portions of each substrate. During the reaction process, both chucks are substantially submerged in reaction solution within a tank. At least one of the chucks is attached and controllable from a control arm. At least one of the chucks is rotated about a vertical axis at a slow speed during the reaction process. The axes of rotation of the two chucks may be coincident, or the axes may be offset from each other, and/or one or both axes may be offset from the chuck centerpoint(s). One of the chucks may also be periodically moved in a vertical direction relative to the other chuck.

摘要翻译： 用于处理衬底以沉积，清洁或蚀刻衬底上的材料的设备和方法使用附接有多个衬底并带电的第一水平卡盘。 与第一个水平卡盘密切相邻的是一个共同延伸的水平第二卡盘，它在每个基板的所有部分上接收和反射反应溶液。 在反应过程中，两个卡盘基本上浸没在罐内的反应溶液中。 至少一个卡盘从控制臂附接和控制。 在反应过程中，至少一个卡盘以垂直轴线以慢速旋转。 两个卡盘的旋转轴线可以重合，或者轴线可能彼此偏移，和/或一个或两个轴线可能偏离卡盘中心点。 其中一个卡盘也可以相对于另一个卡盘在垂直方向周期性地移动。

公开(公告)号：US20050191876A1

公开(公告)日：2005-09-01

申请号：US11122626

申请日：2005-05-05

申请人： David Hembree ,  Salman Akram ,  Derek Gochnour

发明人： David Hembree ,  Salman Akram ,  Derek Gochnour

IPC分类号： G01R1/04 ,  H01R12/00

CPC分类号： G01R1/0466 ,  Y10T29/49117 ,  Y10T29/49147 ,  Y10T29/49149 ,  Y10T29/49153 ,  Y10T29/53209 ,  Y10T29/5323

摘要： A spring element used in a temporary package for testing semiconductors is provided. The spring element is compressed so as to press the semiconductor, either in the form of a bare semiconductor die or as part of a package, against an interconnect structure. The spring element is configured so that it provides sufficient pressure to keep the contacts on the semiconductor in electrical contact with the interconnect structure. Material is added and/or removed from the spring element so that it has the desired modulus of elasticity. The shape of the spring element may also be varied to change the modulus of elasticity, the spring constant, and the force transfer capabilities of the spring element.

摘要翻译： 提供了用于测试半导体的临时封装中的弹簧元件。 弹簧元件被压缩以将半导体以裸半导体管芯的形式或作为封装的一部分压在互连结构上。 弹簧元件构造成使得其提供足够的压力以保持半导体上的触点与互连结构电接触。 向弹簧元件添加和/或移除材料，使其具有所需的弹性模量。 弹簧元件的形状也可以改变以改变弹性元件的弹性模量，弹簧常数和力传递能力。

公开(公告)号：US07960829B2

公开(公告)日：2011-06-14

申请号：US11216617

申请日：2005-08-31

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L23/12

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion that extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member that substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface.

摘要翻译： 用于半导体衬底的减薄或后研磨以及在半导体衬底的后变薄处理期间的支撑结构包括基本上沿着半导体衬底的外周延伸并围绕半导体衬底的外周延伸的部分，以使半导体衬底 基板具有刚性。 支撑结构可以被构造为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。

公开(公告)号：US20060043569A1

公开(公告)日：2006-03-02

申请号：US11129105

申请日：2005-05-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L23/04 ,  H01L29/40

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。

公开(公告)号：US07713841B2

公开(公告)日：2010-05-11

申请号：US10666742

申请日：2003-09-19

申请人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

发明人： Alan G. Wood ,  Warren M. Farnworth ,  David R. Hembree ,  Sidney B. Rigg ,  William M. Hiatt ,  Peter Benson ,  Kyle K. Kirby ,  Salman Akram

IPC分类号： H01L21/46

CPC分类号： G03F7/0037 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00 ,  G03F7/0047

摘要： A support structure for use with a semiconductor substrate in thinning, or backgrinding, thereof, as well as during post-thinning processing of the semiconductor substrate includes a portion which extends substantially along and around an outer periphery of the semiconductor substrate to impart the thinned semiconductor substrate with rigidity. The support structure may be configured as a ring or as a member which substantially covers an active surface of the semiconductor substrate and forms a protective structure over each semiconductor device carried by the active surface. Assemblies that include the support structure and a semiconductor substrate are also within the scope of the present invention, as are methods for forming the support structures and thinning and post-thinning processes that include use of the support structures.

摘要翻译： 在半导体衬底的薄化或后研磨以及后稀化处理期间与半导体衬底一起使用的支撑结构包括基本上沿半导体衬底的外周延伸并且围绕半导体衬底的外周延伸的部分，以使薄化半导体 基板具有刚性。 支撑结构可以被配置为环或作为基本上覆盖半导体衬底的有源表面并且在由有源表面承载的每个半导体器件上形成保护结构的构件。 包括支撑结构和半导体衬底的组件也在本发明的范围内，形成支撑结构的方法和包括使用支撑结构的减薄和后变薄工艺也是如此。

公开(公告)号：US20070259517A1

公开(公告)日：2007-11-08

申请号：US11777797

申请日：2007-07-13

申请人： Peter Benson ,  Salman Akram

发明人： Peter Benson ,  Salman Akram

IPC分类号： H01L21/4763

CPC分类号： H01L21/76898 ,  B33Y80/00 ,  H01L23/481 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/02327 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01021 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/09701 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.

摘要翻译： 公开了低温处理后侧再分配线（RDL）。 低温处理的背面RDL可以通过晶片互连（TWI）与半导体衬底的有源表面器件电连接。 TWI可以在形成RDL之后，在形成RDL之后形成，或者基本上同时形成以形成RDL。 用于背面RDL和各种其它相关材料（例如电介质和导电通孔填充材料）的材料在足够低的温度下进行处理，以便不损坏包含在半导体衬底的有源表面上的半导体器件或相关组件。 本发明的低温处理背面RDL可以用于光学交互式半导体器件和半导体存储器件等等。 采用本发明的RDL的半导体器件可以堆叠并且电连接在一起。