公开(公告)号：US06945259B2

公开(公告)日：2005-09-20

申请号：US10607976

申请日：2003-06-30

申请人： Kenji Masui ,  Akio Kosaka ,  Hidehiro Watanabe

发明人： Kenji Masui ,  Akio Kosaka ,  Hidehiro Watanabe

IPC分类号： B08B3/02 ,  B08B3/08 ,  B08B3/12 ,  H01L21/00 ,  H01L21/304 ,  B06B3/00

CPC分类号： H01L21/67051 ,  B08B3/08 ,  B08B3/12 ,  Y10S134/902 ,  Y10S438/906

摘要： A substrate cleaning apparatus is provided that includes a cleaning cup for receiving a to-be-cleaned substrate, a table in the cleaning cup, a first, second, and third nozzles, a pure water heating mechanism configured to supply hot pure water, a branch line, a control mechanism, and an open/close valve, provided between the branch line and the pipe, wherein the open/close valve is configured to interrupt emission of hot water from the third nozzle by opening the open/close valve to lower the pressure in the pipe.

摘要翻译： 提供了一种基板清洁装置，其包括用于接收待清洁基板的清洁杯，清洁杯中的台，第一，第二和第三喷嘴，构造成供应热纯水的纯水加热机构， 分支管路，控制机构和开关阀，其设置在分支管线和管道之间，其中开/关阀构造成通过打开/关闭阀门来中断来自第三喷嘴的热水的排放 管中的压力。

公开(公告)号：US20050176218A1

公开(公告)日：2005-08-11

申请号：US11046535

申请日：2005-01-28

申请人： Ralf Jonczyk ,  Scott Kendall ,  James Rand

发明人： Ralf Jonczyk ,  Scott Kendall ,  James Rand

IPC分类号： C30B11/00 ,  C30B13/00 ,  C30B29/64 ,  H01L21/00 ,  H01L29/06 ,  H01L31/0236 ,  H01L31/18 ,  H01L21/36 ,  C30B1/00 ,  H01L21/20

CPC分类号： H01L21/67109 ,  C30B11/002 ,  C30B13/00 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/906 ,  Y10S438/958

摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

摘要翻译： 提供了一种制造晶片的方法，包括将半导体材料沉积到固定器的凹部中，通过加热/冷却区域移动固定器以使半导体材料受到温度分布，以及从凹部移除晶片。 当使用晶片时，晶片的尺寸和形状基本上等于晶片的尺寸。 结果，晶片可以以任何期望的形状和各种表面结构特征和/或内部结构特征中的任一种制造。 可以严格控制温度曲线，使得能够生产具有以前不可获得的结构特征的晶片。 还提供了通过这种方法和设置器形成的用于这种方法的晶片。

公开(公告)号：US06911096B2

公开(公告)日：2005-06-28

申请号：US10288768

申请日：2002-11-06

申请人： Kaori Watanabe

发明人： Kaori Watanabe

IPC分类号： H01L21/66 ,  B08B3/04 ,  B08B7/00 ,  C23G1/36 ,  C25F1/00 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02054 ,  B08B3/04 ,  B08B7/0014 ,  H01L21/67051 ,  Y10S438/906

摘要： A method of collecting impurities existing on the surface of a semiconductor wafer and in a thin film formed on the semiconductor wafer is provided with a process for dripping collecting liquid on the surface of the semiconductor wafer to which hydrophobic processing is applied, a process for elongating the collecting liquid dripped and turned spherical by surface tension in a direction of the radius of the semiconductor wafer with the surface tension kept, a process for relatively rolling and scanning the elongated collecting liquid, touching the collecting liquid to the surface of the semiconductor wafer and incorporating impurities into the collecting liquid, a process for restoring the elongated collecting liquid to the original spherical shape after the impurities are incorporated and a process for withdrawing the collecting liquid restored to the spherical shape from the surface of the semiconductor wafer.

摘要翻译： 收集存在于半导体晶片表面上的杂质和在半导体晶片上形成的薄膜中的杂质的方法，提供了在采用疏水处理的半导体晶片的表面滴下收集液的方法， 收集液体在保持表面张力的情况下，通过表面张力在半导体晶片的半径方向上滴落并变成球形，用于相对滚动和扫描细长收集液体的步骤，将收集液体接触到半导体晶片的表面， 将杂质结合到收集液中，在加入杂质之后将细长收集液恢复成原始球形的方法，以及从半导体晶片的表面将收集液体还原成球形的方法。

公开(公告)号：US06905965B2

公开(公告)日：2005-06-14

申请号：US10780105

申请日：2004-02-17

申请人： Suchitra Subrahmanyan ,  Liang-Yuh Chen ,  Roderick Craig Mosely

发明人： Suchitra Subrahmanyan ,  Liang-Yuh Chen ,  Roderick Craig Mosely

IPC分类号： C23C14/02 ,  C23C16/02 ,  H01L21/285 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/0236 ,  C23C14/022 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76861 ,  Y10S438/906

摘要： The present invention generally provides a precleaning process prior to metallization for submicron features on substrates. The method includes cleaning the submicron features with radicals from a plasma of a reactive gas such as oxygen, a mixture of CF4/O2, or a mixture of He/NF3, wherein the plasma is preferably generated by a remote plasma source and the radicals are delivered to a chamber in which the substrate is disposed. Native oxides remaining in the submicron features are preferably reduced in a second step by treatment with radicals from a plasma containing hydrogen. Following the first or both precleaning steps, the features can be filled with metal by available metallization techniques which typically include depositing a barrier/liner layer on exposed dielectric surfaces prior to deposition of aluminum, copper, or tungsten. The precleaning and metallization steps can be conducted on available integrated processing platforms.

摘要翻译： 本发明通常在金属化之前提供在衬底上的亚微米特征的预清洗工艺。 该方法包括用来自反应气体的等离子体（例如氧气），CF 3/4 O 2 / O 2混合物或He / NF混合物的自由基清洗亚微米特征 其中等离子体优选地由远程等离子体源产生，并且自由基被输送到其中设置衬底的室。 残留在亚微米特征中的天然氧化物优选通过用含有氢的等离子体进行处理而在第二步骤中还原。 在第一或两个预清洗步骤之后，特征可以通过可用的金属化技术用金属填充，其通常包括在沉积铝，铜或钨之前在暴露的电介质表面上沉积阻挡层/衬垫层。 预清洗和金属化步骤可以在可用的集成处理平台上进行。

公开(公告)号：US06890853B2

公开(公告)日：2005-05-10

申请号：US09841800

申请日：2001-04-24

申请人： Maximilian A. Biberger ,  Paul E. Schilling

发明人： Maximilian A. Biberger ,  Paul E. Schilling

IPC分类号： H01L21/28 ,  C23C14/02 ,  C23C16/02 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/304 ,  H01L21/308 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/67167 ,  C23C14/021 ,  C23C16/0227 ,  H01L21/02063 ,  H01L21/02101 ,  H01L21/28556 ,  H01L21/67028 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/76814 ,  Y10S438/906

摘要： A method of depositing a metal film on a substrate includes a supercritical preclean step, a supercritical desorb step, and a metal deposition step. Preferably, the preclean step includes maintaining supercritical carbon dioxide and a chelating agent in contact with the substrate in order to remove an oxide layer from a metal surface of the substrate. More preferably, the preclean step includes maintaining the supercritical carbon dioxide, the chelating agent, and an acid in contact with the substrate. Alternatively, the preclean step includes maintaining the supercritical carbon dioxide and an amine in contact with the oxide layer. The desorb step includes maintaining supercritical carbon dioxide in contact with the substrate in order to remove adsorbed material from the substrate. The metal deposition step then deposits the metal film on the substrate without exposing the substrate to an oxidizing material which oxidizes the metal surface of the precleaned substrate and without exposing the substrate to a nonvolatile adsorbing material which adsorbs to the substrate. An apparatus for depositing the metal film on a substrate includes a transfer module, a supercritical processing module, a vacuum module, and a metal deposition module. The supercritical processing module is coupled to the transfer module. The vacuum module couples the metal deposition module to the transfer module. In operation, the apparatus for depositing the metal film performs the supercritical preclean step, the supercritical desorb step, and the metal deposition step.

摘要翻译： 在基板上沉积金属膜的方法包括超临界预清洗步骤，超临界解吸步骤和金属沉积步骤。 优选地，预清洗步骤包括保持与基材接触的超临界二氧化碳和螯合剂以从基材的金属表面除去氧化物层。 更优选地，预清洗步骤包括保持超临界二氧化碳，螯合剂和与基底接触的酸。 或者，预清洗步骤包括保持超临界二氧化碳和胺与氧化物层接触。 解吸步骤包括保持与基材接触的超临界二氧化碳以从基材中除去吸附的材料。 金属沉积步骤然后将金属膜沉积在基板上，而不将基板暴露于氧化材料，氧化材料氧化预先清洗的基板的金属表面，而不将基板暴露于吸附于基板上的不挥发性吸附材料。 用于将金属膜沉积在基板上的装置包括转印模块，超临界处理模块，真空模块和金属沉积模块。 超临界处理模块耦合到传送模块。 真空模块将金属沉积模块耦合到转移模块。 在操作中，用于沉积金属膜的装置执行超临界预清洗步骤，超临界解吸步骤和金属沉积步骤。

公开(公告)号：US20050092431A1

公开(公告)日：2005-05-05

申请号：US11000978

申请日：2004-12-02

申请人： Takeo Nakamoto ,  Katsuya Kosaki ,  Masaru Kinugawa

发明人： Takeo Nakamoto ,  Katsuya Kosaki ,  Masaru Kinugawa

IPC分类号： C23C18/16 ,  C23C18/31 ,  C23F1/00 ,  C25D7/12 ,  H01L21/00 ,  H01L21/288 ,  H01L21/304 ,  H01L21/306 ,  H01L21/768 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L21/02052 ,  H01L21/288 ,  H01L21/67086 ,  H01L21/76898 ,  Y10S438/906 ,  Y10S438/974

摘要： Air trapped in a blind hole during processing of the blind hole with a liquid is eliminated by circulating the liquid along a surface-to-be-processed in substantially a single direction at all times and by setting a velocity gradient of the liquid over the surface to at least 300/second.

摘要翻译： 在处理盲孔时用液体捕获的空气中的空气通过使液体始终沿基本上单个方向沿待处理的表面循环并通过将液体在表面上的速度梯度设定而消除 至少300次/秒。

公开(公告)号：US20050081824A1

公开(公告)日：2005-04-21

申请号：US10689430

申请日：2003-10-20

申请人： Hong-Miao Chen ,  Yu-Chang Jong ,  Huan-Chi Tseng

发明人： Hong-Miao Chen ,  Yu-Chang Jong ,  Huan-Chi Tseng

IPC分类号： B08B6/00 ,  B08B7/00 ,  C25F1/00 ,  C25F3/30 ,  C25F5/00 ,  F02D1/00 ,  H01L21/02 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： B08B7/0042 ,  H01L21/02046 ,  Y10S438/906

摘要： The invention describes how contaminant particles may be removed from a surface without in any way damaging that surface. First, the positional co-ordinates of all particles on the surface are recorded. Optionally, only particles that can be expected to cause current or future damage to the surface are included. Then, using optical tweezers, each particle is individually removed and then disposed of. Six different ways to remove and dispose of particles are described.

摘要翻译： 本发明描述了如何从表面去除污染物颗粒，而不会以任何方式损坏该表面。 首先，记录表面上所有颗粒的位置坐标。 可选地，仅包括可以预期会对表面造成当前或未来损害的颗粒。 然后，使用光学镊子，分别除去每个颗粒，然后处理。 描述了去除和处理颗粒的六种不同的方法。

公开(公告)号：US20050070122A1

公开(公告)日：2005-03-31

申请号：US10672631

申请日：2003-09-27

申请人： Evgeni Gousev ,  Huiling Shang ,  Christopher D'Emic ,  Paul Kozlowski

发明人： Evgeni Gousev ,  Huiling Shang ,  Christopher D'Emic ,  Paul Kozlowski

IPC分类号： H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51 ,  H01L21/469

CPC分类号： H01L21/28202 ,  H01L21/02247 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/3143 ,  H01L21/31658 ,  H01L21/318 ,  H01L29/518 ,  Y10S438/906 ,  Y10S438/933

摘要： A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.

摘要翻译： 公开了用作栅极电介质的Ge基材料上产生6nm以下等效氧化物厚度薄的锗氮氧化物层的方法。 该方法涉及两步法。 首先，在Ge基材料的表层中加入氮。 其次，氮掺入之后是氧化步骤。 该方法为基于Ge的场效应器件（例如MOS晶体管）的高质量栅极电介质产生优异的厚度控制。 还公开了具有薄氮氧化锗栅电介质的器件的结构和用这种器件制造的处理器。

公开(公告)号：US06869488B2

公开(公告)日：2005-03-22

申请号：US09752524

申请日：2001-01-03

申请人： Kazuyuki Nishi

发明人： Kazuyuki Nishi

IPC分类号： B08B3/08 ,  B08B3/12 ,  C11D3/20 ,  C11D7/50 ,  C11D11/00 ,  D06L1/22 ,  B08B3/00

CPC分类号： D06L1/22 ,  B08B3/08 ,  B08B3/12 ,  C11D3/2072 ,  C11D7/261 ,  C11D7/262 ,  C11D11/0064 ,  Y10S438/906

摘要： A washing method has a non aqueous washing process of washing an object to be washed using a non aqueous solution, an intermediate washing process of washing the object to be washed using a solution having solubility relative to both an aqueous solution and the non aqueous solution after said non aqueous washing process; and an aqueous washing process of washing the object to be washed with the aqueous solution after said intermediate washing process. When an intermediate washing process is performed between the non aqueous washing process and the aqueous washing process, the non aqueous solution adhered to the object to be washed in the non aqueous washing process is removed in the intermediate washing process, and replaced by a solution having solubility relative to both the non aqueous solution and the aqueous solution, so as to prevent the non aqueous solution from being introduced into the aqueous solution used in the aqueous washing process.

摘要翻译： 洗涤方法具有使用非水溶液洗涤待洗涤物体的非水洗涤方法，使用相对于水溶液和非水溶液两者溶解度的溶液洗涤待洗涤物体的中间洗涤方法， 所述非水洗涤方法; 以及在所述中间洗涤过程之后用水溶液洗涤待洗涤物体的水洗工艺。 当在非水洗涤过程和含水洗涤过程之间进行中间洗涤过程时，在中间洗涤过程中除去在非水洗涤过程中附着到待洗涤物体上的非水溶液，并用具有 相对于非水溶液和水溶液的溶解度，以防止将非水溶液引入用于水性洗涤过程的水溶液中。

公开(公告)号：US06864193B2

公开(公告)日：2005-03-08

申请号：US10379769

申请日：2003-03-05

申请人： Chun-Li Chou ,  Hun-Jan Tao ,  Peng-Fu Hsu

发明人： Chun-Li Chou ,  Hun-Jan Tao ,  Peng-Fu Hsu

IPC分类号： C11D7/26 ,  C11D7/50 ,  C11D11/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/321 ,  H01L21/461

CPC分类号： H01L21/02063 ,  C11D7/261 ,  C11D7/263 ,  C11D7/265 ,  C11D7/267 ,  C11D7/5022 ,  C11D11/0047 ,  Y10S438/905 ,  Y10S438/906

摘要： A composition and method for fabricating a semiconductor wafer containing copper is disclosed, which method includes plasma etching a dielectric layer from the surface of the wafer, plasma ashing a resist from the surface of the wafer, and cleaning the wafer surface by contacting same with a cleaning formulation, which includes the following components and their percentage by weight ranges shown: (a) from about 0.01 to 80% by weight organic solvent, (b) from about 0.01 to 30% by weight copper chelating agent, (c) from about 0.01 to 10% by weight copper inhibitor, and (d) from about 0.01 to 70% by weight water.

摘要翻译： 公开了一种用于制造含有铜的半导体晶片的组合物和方法，该方法包括从晶片的表面等离子体蚀刻介电层，等离子体从晶片的表面灰化抗蚀剂，以及通过使晶片表面与 清洁制剂，其包括以下组分及其重量百分比范围：（a）约0.01至80重量％的有机溶剂，（b）约0.01至30重量％的铜螯合剂，（c）约 0.01〜10重量％的铜抑制剂，（d）约0.01〜70重量％的水。