公开(公告)号：US20070005884A1

公开(公告)日：2007-01-04

申请号：US11477746

申请日：2006-06-28

申请人： Yukie Hiratsuka ,  Manabu Nishikawa ,  Hiroaki Inoue

发明人： Yukie Hiratsuka ,  Manabu Nishikawa ,  Hiroaki Inoue

IPC分类号： G06F13/00

CPC分类号： G06F12/0871

摘要： A processing speed is improved when there is a pattern in which read requests making access to continuous areas in an LBA space repeatedly alternate with write requests making access to continuous or non-continuous areas in the LBA space. In one embodiment, when the pattern in which read requests making access to continuous areas in an LBA space repeatedly alternate with write requests making access to continuous or non-continuous areas in the LBA space is extracted or a notice that the pattern has occurred is given from a host, write data required by write requests is buffered while executing read requests, and when this buffering of the write data is started, the position at which write data is started to be written is set to a position where the capacity of the buffered write data maximizes, taking account of the ratio of the amount of data transferred to a cache memory during reading to the amount of data transferred to the cache memory during writing.

摘要翻译： 当存在对访问LBA空间中的连续区域的读取请求重复与写入请求交替的模式时，处理速度得到改善，从而访问LBA空间中的连续或非连续区域。 在一个实施例中，当提取访问LBA空间中的连续区域的读取请求重复与在LBA空间中访问连续或非连续区域的写入请求交替的模式时，给出模式发生的通知 在执行读取请求时，写入请求所需的写入数据被缓冲，并且当写入数据的这种缓冲开始时，将写入数据开始写入的位置设置为缓冲的 写数据最大化，考虑到在读取期间传输到高速缓存存储器的数据量与写入期间传输到高速缓冲存储器的数据量的比率。

公开(公告)号：US07060618B2

公开(公告)日：2006-06-13

申请号：US10216902

申请日：2002-08-13

申请人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/302

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法。 半导体器件具有嵌入式互连结构，其中诸如铜或银的电导体嵌入形成在半导体衬底的表面中的细小凹槽中，并且还具有形成在暴露的互连件的表面上的保护膜，所述互连限定了互连 结构，保护互连。 保护膜具有平坦的表面。

公开(公告)号：US20060040487A1

公开(公告)日：2006-02-23

申请号：US11254790

申请日：2005-10-21

申请人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

发明人： Hiroaki Inoue ,  Norio Kimura ,  Xinming Wang ,  Moriji Matsumoto ,  Makoto Kanayama

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C18/1608 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/32 ,  C23C18/48 ,  C23C18/50 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device and a method for manufacturing the same. The semiconductor device has an embedded interconnect structure in which an electric conductor, such as copper or silver, is embedded in fine recesses formed in a surface of a semiconductor substrate, and also has a protective film formed on surfaces of exposed interconnects that define the interconnect structure, to protect the interconnects. The protective film has a flattened surface.

公开(公告)号：US20050277394A1

公开(公告)日：2005-12-15

申请号：US11097264

申请日：2005-04-04

申请人： Hiroaki Inoue

发明人： Hiroaki Inoue

IPC分类号： H01L27/04 ,  G06F1/10 ,  H01L21/822 ,  H01L27/00 ,  H04B1/10 ,  H04B1/18 ,  H04B15/02

CPC分类号： G06F1/10 ,  H01L2224/05554 ,  H01L2224/49175 ,  H04B15/02 ,  H04B2215/064

摘要： A semiconductor integrated circuit device includes a semiconductor substrate; at least one integrated circuit block formed in the semiconductor substrate; a first electrode pad which receives a first clock, the first electrode pad being disposed on the semiconductor substrate; a wiring line which electrically connects the integrated circuit block and the first electrode pad, the wiring line being disposed on the semiconductor substrate; and a second electrode pad which receives a second clock having the same frequency as and opposite polarity from the first clock, the second electrode pad being disposed in a position adjacent to the first electrode pad on the semiconductor substrate and isolated from the integrated circuit block.

摘要翻译： 半导体集成电路器件包括半导体衬底; 形成在所述半导体衬底中的至少一个集成电路块; 接收第一时钟的第一电极焊盘，所述第一电极焊盘设置在所述半导体衬底上; 电连接所述集成电路块和所述第一电极焊盘的布线，所述布线配置在所述半导体基板上; 以及第二电极焊盘，其接收与所述第一时钟具有相同极性的相同频率的第二时钟，所述第二电极焊盘设置在与所述半导体衬底上的所述第一电极焊盘相邻并且与所述集成电路块隔离的位置。

公开(公告)号：US06894711B2

公开(公告)日：2005-05-17

申请号：US10464861

申请日：2003-06-19

申请人： Noboru Yamakawa ,  Hitoshi Saito ,  Hisaki Ota ,  Hiroaki Inoue ,  Junichi Hiroi ,  Tatsuya Kita ,  Shinichiro Takeda ,  Hiroshi Sugita

发明人： Noboru Yamakawa ,  Hitoshi Saito ,  Hisaki Ota ,  Hiroaki Inoue ,  Junichi Hiroi ,  Tatsuya Kita ,  Shinichiro Takeda ,  Hiroshi Sugita

IPC分类号： B41M5/382 ,  B41J2/315 ,  B41J33/02 ,  B41J33/04 ,  B41M5/50 ,  B41M5/52 ,  B41J15/02

CPC分类号： B41J33/04 ,  B41J33/02

摘要： A coreless thermal transfer recording web roll 10 is formed by rolling a thermal transfer recording web 10a in a roll. An inner end part 11 of the thermal transfer recording web 10a of the thermal transfer recording web roll 10 has a tab 11a formed at a substantially middle of the inner end part 11, and sticking parts 11b formed on the opposite sides of the tab 11a, respectively. Pseudoadhesive double-coated tapes 14 are attached to the sticking parts 11b, respectively. The pseudoadhesive double-coated tapes become tack-free after the sticking parts 11b have been separated from the innermost layer of the thermal transfer recording web 10a of the thermal transfer recording web roll 10.

摘要翻译： 通过将热转印记录纤维网10a卷成卷而形成无芯热转印记录卷筒纸10。 热转印记录卷筒纸10的热转印记录纸幅10a的内端部11具有形成在内端部11的大致中间的突片11a，以及形成在内端部11的相对侧的粘贴部11b 标签11a。 伪胶粘双面胶带14分别附着到粘贴部分11b上。 在粘贴部分11b从热转印记录卷筒纸10的热转印记录纸幅10a的最内层分离出之后，伪粘合双面胶带变得无粘性。

公开(公告)号：US06689257B2

公开(公告)日：2004-02-10

申请号：US09864210

申请日：2001-05-25

申请人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

发明人： Koji Mishima ,  Junji Kunisawa ,  Natsuki Makino ,  Norio Kimura ,  Hiroaki Inoue ,  Kenji Nakamura ,  Moriji Matsumoto ,  Takahiro Nanjo ,  Mitsuko Odagaki

IPC分类号： C25D1700

CPC分类号： H01L21/67109 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/67778 ,  H01L21/681

摘要： A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to allow a substrate to be loaded and unloaded, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

公开(公告)号：US06632335B2

公开(公告)日：2003-10-14

申请号：US09742110

申请日：2000-12-22

申请人： Junji Kunisawa ,  Mitsuko Odagaki ,  Natsuki Makino ,  Koji Mishima ,  Kenji Nakamura ,  Hiroaki Inoue ,  Norio Kimura ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Manabu Tsujimura ,  Toshiyuki Morita

发明人： Junji Kunisawa ,  Mitsuko Odagaki ,  Natsuki Makino ,  Koji Mishima ,  Kenji Nakamura ,  Hiroaki Inoue ,  Norio Kimura ,  Tetsuo Matsuda ,  Hisashi Kaneko ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Manabu Tsujimura ,  Toshiyuki Morita

IPC分类号： C25D2112

CPC分类号： H01L21/6719 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  C25D17/14 ,  H01L21/2885 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/6723 ,  H01L21/76877 ,  H01L21/76879 ,  H01L2924/0002 ,  H05K3/423 ,  H01L2924/00

摘要： A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

摘要翻译： 用于衬底的电镀方法和装置将诸如铜的金属填充到形成在半导体衬底中的精细互连图案中。 该装置具有将待镀表面向上水平保持并旋转的衬底的衬底保持部分 36 。 密封材料 90 接触表面的外围边缘部分，以水密的方式密封该部分。 当与基板接触时，阴极电极 88 通过电流。 阴极部分 38 与衬底保持部分 36 整体旋转。 电极臂部分 30 在阴极部分 38 之上，水平和垂直移动并具有阳极 PDAT> 98 面朝下。 将电镀液倒入要被镀表面和靠近待镀表面的阳极 98 之间的空间中。 因此，电镀处理和附带的处理可以通过单个单元执行

公开(公告)号：US06580446B2

公开(公告)日：2003-06-17

申请号：US10022221

申请日：2001-12-20

申请人： Noboru Yamakawa ,  Hitoshi Saito ,  Hiroaki Inoue ,  Hisaki Ota ,  Junichi Hiroi

发明人： Noboru Yamakawa ,  Hitoshi Saito ,  Hiroaki Inoue ,  Hisaki Ota ,  Junichi Hiroi

IPC分类号： B41J1504

CPC分类号： B41J15/02

摘要： A thermal transfer printer includes a thermal transfer recording web roll having a bore and obtained by rolling a thermal transfer web. The segment of the thermal transfer recording web forming the innermost layer of the thermal transfer recording web roll is fixed to a part of a segment of the same forming the second innermost layer of the thermal transfer recording web roll. A holding device is inserted in the bore of the thermal transfer recording web roll to hold the thermal transfer recording web roll. The thermal transfer recording web roll and the holding device rotate in a unit to feed the thermal transfer recording web to a thermal transfer recording unit that forms images on the thermal transfer recording web. The thermal transfer recording web roll can be prepared at a low cost without requiring much time and effort.

公开(公告)号：US06573201B1

公开(公告)日：2003-06-03

申请号：US09332904

申请日：1999-06-15

申请人： Naoaki Ogure ,  Hiroaki Inoue

发明人： Naoaki Ogure ,  Hiroaki Inoue

IPC分类号： H01L2168

CPC分类号： H01L21/67098 ,  Y10T29/41

摘要： A method and apparatus can provide surface protection of substrates such as semiconductor wafers while they are being transported from one unit process to another unit process. The method comprises coating at least a part of a surface of the substrate with a coagulated film such as an ice film.

摘要翻译： 一种方法和装置可以在诸如半导体晶片的衬底从一个单元工艺传送到另一个单元工艺时提供表面保护。 该方法包括用诸如冰膜的凝结膜涂覆基底表面的至少一部分。

公开(公告)号：US06569752B1

公开(公告)日：2003-05-27

申请号：US09522820

申请日：2000-03-10

申请人： Soichi Homma ,  Masahiro Miyata ,  Hirokazu Ezawa ,  Junichiro Yoshioka ,  Hiroaki Inoue ,  Tsuyoshi Tokuoka

发明人： Soichi Homma ,  Masahiro Miyata ,  Hirokazu Ezawa ,  Junichiro Yoshioka ,  Hiroaki Inoue ,  Tsuyoshi Tokuoka

IPC分类号： H01L2144

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/207 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

摘要翻译： 本半导体元件包括半导体衬底，形成在其上的布线衬垫，形成在其上的阻挡金属层，形成在其上的金属间化合物Ag 3 Sn，以及由其上形成的低熔点金属组成的突出电极。 此外，半导体元件的制造方法包括以下步骤：在半导体衬底上形成布线焊盘，在其上形成阻挡金属层，在其上形成含有Ag的金属层，在其上形成含有Sn的低熔点金属层 并且熔化含有Sn的低熔点金属层以形成突出电极，同时在包含Ag的金属层和含有Sn的低熔点金属层之间的界面处形成金属间化合物Ag 3 Sn。 因此，利用无铅焊料，可以获得高可靠性的半导体元件。