公开(公告)号：US07660644B2

公开(公告)日：2010-02-09

申请号：US11423535

申请日：2006-06-12

申请人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

发明人： Barry L. Chin ,  Alfred W. Mak ,  Lawrence Chung-Lai Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC分类号： G06F19/00

CPC分类号： C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

摘要翻译： 描述了用于原子层沉积（ALD）的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

公开(公告)号：US20080317954A1

公开(公告)日：2008-12-25

申请号：US11621040

申请日：2007-01-08

申请人： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

发明人： XINLIANG LU ,  Ping Jian ,  Jong Hyun Yoo ,  Ken Kaung Lai ,  Alfred W. Mak ,  Robert L. Jackson ,  Ming Xi

IPC分类号： C23C16/08

CPC分类号： H01L21/28562 ,  C23C16/14 ,  C23C16/45523 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/02

摘要： In one embodiment, a method for depositing a tungsten material on a substrate within a process chamber is provided which includes exposing the substrate to a gaseous mixture containing a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the substrate during a tungsten deposition process. The process further includes removing reaction by-products generated during the tungsten deposition process from the process chamber, exposing the substrate to the reducing gas to react with residual tungsten precursor within the process chamber during a soak process, removing reaction by-products generated during the soak process from the process chamber, and repeating the tungsten deposition process and the soak process during a cyclic deposition process. In the examples, the reducing gas may contain diborane or silane.

摘要翻译： 在一个实施例中，提供了一种用于在处理室内的衬底上沉积钨材料的方法，其包括将衬底暴露于含有钨前体和还原气体的气态混合物，以在钨沉积期间在衬底上沉积钨成核层 处理。 该方法还包括从处理室除去在钨沉积过程中产生的反应副产物，在浸泡过程期间将基底暴露于还原气体以与处理室内的残余钨前体反应，除去在该过程中产生的反应副产物 从处理室浸泡处理，并且在循环沉积工艺期间重复钨沉积工艺和浸泡工艺。 在实施例中，还原气体可以含有乙硼烷或硅烷。

公开(公告)号：US07465666B2

公开(公告)日：2008-12-16

申请号：US11766121

申请日：2007-06-21

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到​​沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成 在原子层沉积（ALD）过程中在基底上形成钨成核层。 该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

公开(公告)号：US20070254481A1

公开(公告)日：2007-11-01

申请号：US11766121

申请日：2007-06-21

申请人： MORIS KORI ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： MORIS KORI ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/285

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到​​沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成 在原子层沉积（ALD）过程中在基底上形成钨成核层。 该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

公开(公告)号：US07235486B2

公开(公告)日：2007-06-26

申请号：US11468156

申请日：2006-08-29

申请人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred W. Mak ,  Jeong Soo Byun ,  Lawrence Chung-Lai Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体 以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。 该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

公开(公告)号：US07223323B2

公开(公告)日：2007-05-29

申请号：US10616284

申请日：2003-07-08

申请人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

发明人： Michael X. Yang ,  Ming Xi ,  Russell C. Ellwanger ,  Eric B. Britcher ,  Bernardo Donoso ,  Lily L. Pang ,  Svetlana Sherman ,  Henry Ho ,  Anh N. Nguyen ,  Alexander N. Lerner ,  Allen L. D'Ambra ,  Arulkumar Shanmugasundram ,  Tetsuya Ishikawa ,  Yevgeniy Rabinovich ,  Dmitry Lubomirsky ,  Yeuk-Fai Edwin Mok ,  Son T. Nguyen

IPC分类号： C25B9/12 ,  C35D3/38 ,  B08B3/02

CPC分类号： H01L21/6719 ,  A23D7/00 ,  A23D7/005 ,  A23D7/01 ,  A23J7/00 ,  B08B3/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6715 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

摘要翻译： 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与 主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

公开(公告)号：US20070080067A1

公开(公告)日：2007-04-12

申请号：US11245559

申请日：2005-10-07

申请人： Haiyang Gu ,  Jeff Yang ,  Ho Wee ,  Ming Xi ,  Glen Mori ,  Yohan Zondak

发明人： Haiyang Gu ,  Jeff Yang ,  Ho Wee ,  Ming Xi ,  Glen Mori ,  Yohan Zondak

IPC分类号： C23C28/00 ,  C25D5/34

CPC分类号： C23C14/16 ,  C23C14/5853 ,  C23C28/023 ,  C23C28/322 ,  C23C28/345 ,  C25D5/34 ,  C25D7/123 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76856 ,  H01L21/76873 ,  H01L21/76874

摘要： Embodiments of the invention provide methods for reducing formation of void-type defects on the surface of a substrate during electrochemical plating. Embodiments of the invention provide methods to improve the wetting of a substrate surface prior to immersion and thereby minimize adhesion of bubbles to the substrate surface during immersion. A thin uniform metal oxide is formed on a metal layer on the substrate immediately prior to substrate immersion. In one aspect, exposing the substrate to an oxygen-containing gas, e.g. air, forms the metal oxide. The oxygen-containing gas may be flowed over the substrate or the substrate may be rotated at a high rate in the presence of an oxygen-containing gas. In another aspect, non-uniform metal oxides are first removed from the substrate in an anneal process and a thin uniform metal oxide is subsequently re-formed. An optimized substrate immersion method may also be used to further reduce void defects.

摘要翻译： 本发明的实施例提供了用于在电化学电镀期间减少基板表面上的空隙型缺陷的形成的方法。 本发明的实施例提供了在浸渍之前改善衬底表面的润湿并因此使浸入期间气泡与衬底表面的粘附最小化的方法。 在基板浸渍之前，在基板上的金属层上形成薄均匀的金属氧化物。 在一个方面，将基底暴露于含氧气体，例如， 空气形成金属氧化物。 含氧气体可以在衬底上流动，或者衬底可以在含氧气体存在下以高速旋转。 在另一方面，在退火工艺中首先从衬底上除去不均匀的金属氧化物，随后重新形成均匀的均匀金属氧化物。 也可以使用优化的底物浸渍方法来进一步减少空隙缺陷。

公开(公告)号：US07094685B2

公开(公告)日：2006-08-22

申请号：US11151699

申请日：2005-06-13

申请人： Michael X. Yang ,  Toshio Itoh ,  Ming Xi

发明人： Michael X. Yang ,  Toshio Itoh ,  Ming Xi

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

摘要： Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds such as a titanium precursor and a reductant, providing one or more cycles of a second set of compounds such as the titanium precursor and a silicon precursor and providing one or more cycles of a third set of compounds such as the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer on a substrate, depositing a passivation layer containing titanium silicide, titanium silicon nitride or combinations thereof over the titanium layer and subsequently depositing a titanium nitride layer over the passivation layer. Still another embodiment comprises depositing a titanium layer on a substrate, soaking the titanium layer with a silicon precursor and subsequently depositing a titanium nitride layer thereon.

摘要翻译： 本发明的实施方案一般涉及钛和氮化钛层的集成的装置和方法。 一个实施方案包括提供第一组化合物例如钛前体和还原剂的一个或多个循环，提供第二组化合物例如钛前体和硅前体的一个或多个循环，并提供一个或多个循环的 第三组化合物如钛前体和氮前体。 另一实施例包括在衬底上沉积钛层，在钛层上沉积含有硅化钛，氮化钛或其组合的钝化层，随后在钝化层上沉积氮化钛层。 另一个实施例包括在衬底上沉积钛层，用钛前体浸泡钛层，随后在其上沉积氮化钛层。

公开(公告)号：US20060128132A1

公开(公告)日：2006-06-15

申请号：US11338565

申请日：2006-01-24

申请人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

发明人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US20050139160A1

公开(公告)日：2005-06-30

申请号：US11059846

申请日：2005-02-16

申请人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

发明人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。