公开(公告)号：US20130309401A1

公开(公告)日：2013-11-21

申请号：US13983713

申请日：2012-02-10

申请人： Naomasa Miyatake

发明人： Naomasa Miyatake

IPC分类号： C23C16/455

CPC分类号： C23C16/455 ,  C23C16/4485 ,  C23C16/45542

摘要： An atomic layer deposition apparatus that forms a thin film on a substrate, the atomic layer deposition apparatus includes: a deposition vessel in which a source gas supply port and a reactant gas supply port are formed; a source gas supply part operable to supply the source gas to the source gas supply port and that includes a liquid source storage part and a vaporization controller, the liquid source storage part storing a liquid source that is a source material of the thin film, and the vaporization controller controlling a flow rate by directly vaporizing the liquid source stored in the liquid source storage part; a reactant gas supply part operable to supply a reactant gas to the reactant gas supply port, the reactant gas reacting with the source gas to form the thin film; a controller operable to control the source gas supply part and the reactant gas supply part to supply the source gas and the reactant gas alternately; a screen plate that is disposed such that the source gas supplied from the source gas supply port collides therewith; and a temperature adjuster operable to adjust a temperature at the screen plate.

摘要翻译： 原子层沉积装置在基板上形成薄膜，原子层沉积装置包括：形成源气体供给口和反应气体供给口的沉积容器; 源气体供给部，其可操作以将源气体供应到源气体供给口，并且包括液体源储存部和蒸发控制器，所述液体源储存部存储作为所述薄膜的源材料的液体源，以及 蒸发控制器通过直接蒸发存储在液体源储存部分中的液体源来控制流量; 反应气体供给部件，其可操作以将反应气体供应到所述反应气体供给口，所述反应气体与所述源气体反应以形成所述薄膜; 控制器，用于控制源气体供应部分和反应气体供应部分交替地供应源气体和反应气体; 筛网，其设置成使得从源气体供给口供给的源气体与之相冲突; 以及可操作以调节筛板温度的温度调节器。

公开(公告)号：US08544411B2

公开(公告)日：2013-10-01

申请号：US12390291

申请日：2009-02-20

申请人： Kazuyuki Toyoda ,  Yasuhiro Inokuchi ,  Motonari Takebayashi ,  Tadashi Kontani ,  Nobuo Ishimaru

发明人： Kazuyuki Toyoda ,  Yasuhiro Inokuchi ,  Motonari Takebayashi ,  Tadashi Kontani ,  Nobuo Ishimaru

IPC分类号： C23C16/00

CPC分类号： H01L21/02274 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/54 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32834 ,  H01J2237/332 ,  H01L21/02183 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/205 ,  H01L21/31604 ,  H01L21/67109 ,  H01L21/77

摘要： A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

公开(公告)号：US20130189854A1

公开(公告)日：2013-07-25

申请号：US13414619

申请日：2012-03-07

申请人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

发明人： Dennis Hausmann ,  Jon Henri ,  Bart van Schravendijk ,  Easwar Srinivasan

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/7843

摘要： Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

公开(公告)号：US20130037873A1

公开(公告)日：2013-02-14

申请号：US13571559

申请日：2012-08-10

申请人： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Yuichiro MOROZUMI

发明人： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Yuichiro MOROZUMI

IPC分类号： H01L21/02 ,  C23C16/50 ,  H01L27/06 ,  C23C16/34

CPC分类号： H01L28/91 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/10852

摘要： Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.

摘要翻译： 提供能够防止具有柱状并且密集布置的电极的破坏的半导体器件。 具有场效应晶体管和具有柱状电容器的半导体器件，该半导体器件包括：具有柱状并与该场效应晶体管的杂质扩散区电连接的第一电极; 至少在所述第一电极的一侧形成的电介质膜; 形成在电介质膜上的第二电极; 以及在与具有柱状的第一电极的长度方向交叉的方向上延伸的支撑膜，并且通过贯穿第二电极的至少一部分而与第一电极连接的添加硼的氮化硅膜形成。

公开(公告)号：US08318590B2

公开(公告)日：2012-11-27

申请号：US13398988

申请日：2012-02-17

申请人： Philip A. Kraus ,  Thai Cheng Chua ,  Sandeep Nijhawan

发明人： Philip A. Kraus ,  Thai Cheng Chua ,  Sandeep Nijhawan

IPC分类号： H01L31/20

CPC分类号： H01L21/2056 ,  C23C16/303 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45551 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/1016

摘要： A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

摘要翻译： 描述了沉积薄膜的方法和装置。 在实施例中，提供了用于外延薄膜形成的系统和方法，包括用于形成二元化合物外延薄膜的系统和方法。 可以使用本发明实施例的方法和系统来形成直接带隙半导体二元化合物外延薄膜，例如GaN，InN和AlN，以及这些化合物的混合合金，例如（In，Ga）N ，（Al，Ga）N，（In，Ga，Al）N。 方法和装置包括能够快速重复薄膜的亚单层沉积的多级沉积工艺和系统。

公开(公告)号：US08268409B2

公开(公告)日：2012-09-18

申请号：US11873250

申请日：2007-10-16

申请人： Kai-Erik Elers ,  Glen Wilk ,  Steven Marcus

发明人： Kai-Erik Elers ,  Glen Wilk ,  Steven Marcus

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/32 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/515

摘要： Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound and one or more plasma-excited species of a carbon-containing compound. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound and one or more plasma-excited species of a carbon-containing compound. The substrate is further exposed to a reducing agent. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.

摘要翻译： 提供了形成金属碳化物膜的方法。 在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物的气相脉冲和一种或多种等离子体激发的物质 含碳化合物。 在其他实施例中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括使反应空间中的底物与金属化合物和一种或多种等离子体激发的含碳化合物同时接触。 将底物进一步暴露于还原剂。 还原剂除去杂质，包括卤素原子和/或氧原子。

公开(公告)号：US20120219710A1

公开(公告)日：2012-08-30

申请号：US13404547

申请日：2012-02-24

申请人： Yuichiro MOROZUMI ,  Shingo HISHIYA ,  Katsushige HARADA

发明人： Yuichiro MOROZUMI ,  Shingo HISHIYA ,  Katsushige HARADA

IPC分类号： C23C16/34 ,  C23C16/52

CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28562

摘要： According to the method of forming a titanium nitride film, first, an inside of a reaction pipe accommodating a semiconductor wafer is heated up to 200° C. to 350° C. by using a temperature increasing heater. Then, the titanium nitride film is formed on the semiconductor wafer by supplying a film forming gas including a titanium raw material into the reaction pipe. Methylcyclopentadienyl tris(dimethylamino)titanium that does not include a chlorine atom and includes titanium is used as the titanium raw material.

摘要翻译： 根据形成氮化钛膜的方法，首先，使用升温加热器将容纳半导体晶片的反应管的内部加热至200℃〜350℃。 然后，通过向反应管中供给包含钛原料的成膜气体，在半导体晶片上形成氮化钛膜。 作为钛原料，使用不包含氯原子并含有钛的甲基环戊二烯基三（二甲基氨基）钛。

公开(公告)号：US20120213940A1

公开(公告)日：2012-08-23

申请号：US13214730

申请日：2011-08-22

申请人： Abhijit Basu Mallick

发明人： Abhijit Basu Mallick

IPC分类号： B05D3/04

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/45542 ,  H01L21/02274 ,  H01L21/0228

摘要： Atomic layer deposition using a precursor having both nitrogen and silicon components is described. The deposition precursor contains molecules which supply both nitrogen and silicon to a growing film of silicon nitride. Silicon-nitrogen bonds may be present in the precursor molecule, but hydrogen and/or halogens may also be present. The growth substrate may be terminated in a variety of ways and exposure to the deposition precursor displaces species from the outer layer of the growth substrate, replacing them with an atomic-scale silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer grows until one complete layer is produced and then stops (self-limiting growth kinetics). Subsequent exposure to a plasma excited gas modifies the chemical termination of the surface so the growth step may be repeated. The presence of both silicon and nitrogen in the deposition precursor molecule increases the deposition per cycle thereby reducing the number of precursor exposures to grow a film of the same thickness.

摘要翻译： 描述了使用具有氮和硅组分的前体的原子层沉积。 沉积前体包含向氮化硅生长膜供应氮和硅的分子。 硅 - 氮键可以存在于前体分子中，但也可以存在氢和/或卤素。 生长衬底可以以各种方式终止，并且暴露于沉积前体将物质从生长衬底的外层置换，用原子级的含硅和含氮层代替它们。 含硅和氮的层生长直到产生一个完整的层，然后停止（自限制生长动力学）。 随后暴露于等离子体激发气体改变表面的化学终止，因此可以重复生长步骤。 沉积前体分子中硅和氮的存在增加了每个循环的沉积，从而减少了前体曝光的数量以生长相同厚度的膜。

公开(公告)号：US20120200984A1

公开(公告)日：2012-08-09

申请号：US13359831

申请日：2012-01-27

申请人： Mickael GROS-JEAN

发明人： Mickael GROS-JEAN

IPC分类号： H01G4/06 ,  H01G7/00

CPC分类号： H01L21/02274 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/45542 ,  H01L21/02183 ,  H01L21/0228 ,  H01L28/40 ,  Y10T29/43

摘要： A method for manufacturing a TiN/Ta2O5/TiN capacitor, including the steps of depositing, on a TiN layer, a Ta2O5 layer by a plasma enhanced atomic deposition method (PEALD), within a temperature range from 200 to 250° C., by repeating the successive steps of:depositing a tantalum layer from a precursor at a partial pressure ranging between 0.05 and 10 Pa; andapplying an oxygen plasma at an oxygen pressure ranging between 1 and 2000 Pa.

摘要翻译： 一种制造TiN / Ta 2 O 5 / TiN电容器的方法，包括以下步骤：在200〜250℃的温度范围内，通过等离子体增强原子沉积法（PEALD）在TiN层上沉积Ta 2 O 5层，由 重复以下连续步骤：在0.05至10Pa的分压下从前体沉积钽层; 以及在1至2000Pa之间的氧气压力下施加氧等离子体。

公开(公告)号：US20120100722A1

公开(公告)日：2012-04-26

申请号：US13230869

申请日：2011-09-13

申请人： Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

发明人： Masayuki ASAI ,  Koichi HONDA ,  Mamoru UMEMOTO ,  Kazuyuki OKUDA

IPC分类号： H01L21/31 ,  C23C16/505

CPC分类号： C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

摘要： Disclosed is a substrate processing apparatus including: a processing chamber; plural buffer chambers; a first processing gas supply system that supplies a first processing gas to the processing chamber; a second processing gas supply system that supplies a second processing gas to the buffer chambers; a RF power source; plasma-generating electrodes in the buffer chambers; a heating system; and a controller that controls the first and second processing gas supply systems, the power source, and the heating system to expose the substrate having a metal film thereon to the first processing gas, and the second processing gas that is activated in the plural buffer chambers with an application of RF power to the electrodes and that is supplied from the buffer chambers to the processing chamber to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower.

摘要翻译： 公开了一种基板处理装置，包括：处理室; 多个缓冲室; 第一处理气体供应系统，其向所述处理室供应第一处理气体; 向缓冲室供给第二处理气体的第二处理气体供给系统; 射频电源; 缓冲室中的等离子体产生电极; 加热系统; 以及控制器，其控制第一和第二处理气体供应系统，电源和加热系统，以将其上具有金属膜的基板暴露于第一处理气体，以及在多个缓冲室中被激活的第二处理气体 对电极施加RF功率，并且从缓冲室供应到处理室，以在将衬底加热至第一处理气体的自分解温度或更低温度的同时在金属膜上形成膜。