摘要:
A second electrode (16) formed on a second main surface of a compound semiconductor layer (100) of a light emitting element (1) is arranged in contact with the second main surface of the compound semiconductor layer (100) and has a junction alloying layer (31) for reducing the resistance due to the junction with said compound semiconductor layer (100) and a solder layer (34) for connecting said junction metal layer to an electoconductive support (52). In the solder layer (34), there are formed an Sn-based solder layer (34s) which is arranged on the junction alloying layer (31) side and comprises an Sn-based metal containing Sn as a main component and having a melting point lower than that of the junction alloying layer (31) and an Au—Sn based solder layer (34m) which is arranged on the side opposite to the junction alloying layer (31) with respect to said Sn-based solder layer (34s) and in contact therewith and contains 30 to 90 mass % of Au and 10 to 70 mass % of Sn and has a total content of Au and Sn of 80 mass % or more and has a melting point higher than that of the Sn-based solder layer (34s). The above structure of an element is excellent in the reliability of the junction between an Au—Sn based solder layer and a junction alloying layer, which results in making the Au—Sn based solder layer less prone to exfoliation, in the case of a light-emitting element which adopts the mounting using an Au—Sn based solder layer.
摘要:
A swage hermetic sealing of a MEMS or microdevice or nanodevice package using high force. A cutting and flowing edge 430 is formed on a package cover which is pressed into a mating , integral gasket 425 on a package base. A material extension of the package cover 450 is simultaneously folded under the package base to supply force maintenance for permanent hermaticity. The swage hermetic sealing of single or an array of covers to an extended wafer or substrate is accomplished by a cutting and flowing edge 560. Permanent force maintenance is achieved through a re-entrant cavity 565 and annular ring 535 on the wafer or substrate.
摘要:
The outer surface of a wide-gap semiconductor device is covered with a synthetic polymer compound. The synthetic polymer compound is formed by linking a plurality of third organosilicon polymers through covalent bonding which is formed by addition reaction, and has a three-dimensional steric structure. The third organosilicon polymers are obtained by liking one or more kinds of first organosilicon polymers having a bridge structure formed by siloxane bonds (Si—O—Si bonds) with one or more kinds of second organosilicon polymers having a linear structure formed by siloxane bonds. Insulating ceramic fine particles having high heat conductivity are preferably mixed with the synthetic polymer compound.
摘要:
A hermetically sealed package embodying the invention includes a base member having top and bottom surfaces. An electronic device having multiple electrodes is securely mounted on the top surface of the base member. The electrodes of the electronic device are made accessible to external circuits via wire connection to conducting leads disposed through pre-formed holes extending vertically from the top surface to the bottom surface of the base member. The conductive leads then extend horizontally along preformed grooves formed along the bottom surface of the base member. The holes with the leads passing though them are hermetically sealed. A portion of selected conductive leads extending above the top surface are selectively bonded to selected electrodes of the electronic device. A ceramic cap is mounted over and around the electronic device and the conductive leads,and encompasses them. The cap has a bottom rim which fits into a preformed trench running along the outer periphery of the base member. The rim and trench are pre-metallized to enable the formation of a hermetic seal.
摘要:
An optical module with a CAN package contains a stem and a lead. The stem has a hole penetrating the stem and an inner cylindrical surface surrounding the hole. The lead extends through the hole such that a gap exists between the lead and the inner cylindrical surface. The gap contains first and second portions which are arranged along the longitudinal direction of the hole. The first portion is filled with sealing material which is dielectric. The second portion is filled with air.
摘要:
The present invention relates to a control unit (1), for automotive applications in particular, with: a frame (8) that includes a recess (9) across which electrical conductive tracks (10) extend to supply electrical power; a base plate (11) that is inserted in the frame (8); a circuit carrier (12) on which electronic components are mounted and which is installed on the base plate (11); an electrical connection (14) for connecting the circuit carrier (12) with the conductive tracks (10); and a cover (4) for hermetically sealing the control unit (1), the cover including a shaped section that is insertable in the associated recess (9) in the frame (8); whereby a sealing gel (16) is provided in recess (9) with a viscosity such that the sealing gel (16) can flow around the electrical conductive tracks (10) that extend across the recess (9). The present invention further relates to a manufacturing method for manufacturing a control unit (1) of this type.
摘要:
An aluminum nitride sintered body produced by sintering under pressure of a powder composition comprising aluminum nitride and 5 to 30% by weight of at least one sintering aid selected from the group consisting of Nd, Sm, Eu, Er, Dy, Gd, Pr and Yb, per 100% by weight of the powders of aluminum nitride and the sintering aid, wherein the amount of the sintering aid is a conversion value as oxides of the elements, the sintering body that has been subjected to mirror-polishing having a surface roughness R max of 0.2 μm or less and a thermal conductivity of 200 (W/mK) or more.
摘要翻译:一种氮化铝烧结体,其通过在包含氮化铝的粉末组合物和5-30重量%的至少一种选自由Nd,Sm,Eu,Er,Dy,Gd,Pr和 Yb,每100重量%的氮化铝粉末和烧结助剂,其中烧结助剂的量是作为元素的氧化物的转化值,已经经过镜面抛光的烧结体具有表面粗糙度 R max为0.2μm以下,热导率为200(W / mK)以上。
摘要:
A light emitting device comprises a light emitting element, a metal package having a recess part for housing the light emitting element and a base part which has one or more through holes, one or more lead electrode pins which penetrate the through holes and are separated from the through holes by a insulating member respectively, wherein the bottom faces of the lead electrode pins project out from the bottom face of the base part and positioned on a same plane including a outer bottom face of the recess part. With this configuration, the light emitting device which has a good heat radiating characteristic and high mechanical strength.
摘要:
The optoelectronic device includes a photo diode and an amplifier, which amplifies output of the photo diode. The amplifier includes an input stage and an output stage. In one embodiment, the input stage has a series connection to a resistor, which is connected to a ground. The output stage has a connection to ground that does not overlap the series connection. In another embodiment, the input stage has a first connection to a bypass capacitor, which is connected to a power source. The output stage has a separate, second connection to the capacitor, which prevents high frequencies from flowing between the input stage and said output stage via a connection to the power source.
摘要:
A die-bonding solder material according to the present invention is so arranged as to be an eutectic including tin and gold with such a substantial composition ratio as having the eutectic point with a more content of tin than the content that of gold.