公开(公告)号：US20140061932A1

公开(公告)日：2014-03-06

申请号：US13604333

申请日：2012-09-05

申请人： Meng-Tse Chen ,  Yi-Da Tsai ,  Xi-Hong Chen ,  Tao-Hua Lee ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Yi-Da Tsai ,  Xi-Hong Chen ,  Tao-Hua Lee ,  Wei-Yu Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/28 ,  H01L21/78 ,  H01L21/56 ,  H01L23/48

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5385 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/29116 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/81805 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/48227 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： A package-on-package (“PoP”) structure and a method of forming are provided. The PoP structure may be formed by forming a first set of electrical connections on a first substrate. A first material may be applied to the first set of electrical connections. A second substrate may be provided having a second set of electrical connections formed thereon. The first set of electrical connections of the first substrate having the epoxy flux applied may be contacted to the second electrical connections of the second substrate. A reflow process may be performed to electrically connect the first substrate to the second substrate. The epoxy flux applied to the first electrical connections of the first substrate may prohibit electrical bridges or shorts from forming during the reflow process.

摘要翻译： 提供封装封装（“PoP”）结构和形成方法。 PoP结构可以通过在第一基板上形成第一组电连接而形成。 可以将第一材料施加到第一组电连接。 可以提供具有形成在其上的第二组电连接的第二基板。 具有施加的环氧树脂焊剂的第一基板的第一组电连接可以接触第二基板的第二电连接。 可以进行回流工艺以将第一衬底电连接到第二衬底。 施加到第一基板的第一电连接处的环氧树脂通量可能会在回流过程中阻止电桥或短路的形成。

公开(公告)号：US20140048934A1

公开(公告)日：2014-02-20

申请号：US13586564

申请日：2012-08-15

申请人： Meng-Tse Chen ,  Jung Wei Cheng ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Jung Wei Cheng ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L21/563 ,  H01L2224/16225

摘要： A semiconductor device assembly includes a substrate having an area of the surface treated to form a surface roughness. A die is mounted on the substrate by a plurality of coupling members. An underfill substantially fills a gap disposed between the substrate and the die, wherein a fillet width of the underfill is substantially limited to the area of surface roughness.

摘要翻译： 半导体器件组件包括具有被处理以形成表面粗糙度的表面区域的衬底。 模具通过多个联接构件安装在基板上。 底部填充物基本上填充设置在基底和模具之间的间隙，其中底部填充物的圆角宽度基本上限于表面粗糙度的面积。

公开(公告)号：US20140045300A1

公开(公告)日：2014-02-13

申请号：US13571665

申请日：2012-08-10

申请人： Meng-Tse Chen ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Tsai-Tsung Tsai ,  Ai-Tee Ang ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Tsai-Tsung Tsai ,  Ai-Tee Ang ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/50 ,  H05B3/00

CPC分类号： H01L21/67288 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2225/1058 ,  H01L2924/0002 ,  H01L2924/15311 ,  H05B6/6447 ,  H05B6/80 ,  H01L2924/0001

摘要： The present disclosure relates to a tool arrangement and method to reduce warpage within a package-on-package semiconductor structure, while minimizing void formation within an electrically-insulating adhesive which couples the packages. A pressure generator and a variable frequency microwave source are coupled to a process chamber which encapsulates a package-on-package semiconductor structure. The package-on-package semiconductor structure is simultaneously heated by the variable frequency microwave source at variable frequency, variable temperature, and variable duration and exposed to an elevated pressure by the pressure generator. This combination for microwave heating and elevated pressure limits the amount of warpage introduced while preventing void formation within an electrically-insulating adhesive which couples the substrates of the package-on-package semiconductor structure.

摘要翻译： 本公开涉及一种减少封装封装半导体结构内的翘曲的工具布置和方法，同时最小化耦合封装的电绝缘粘合剂内的空隙形成。 压力发生器和可变频率微波源耦合到封装封装的封装半导体结构的处理室。 封装的封装半导体结构由可变频率，可变温度和可变持续时间的可变频率微波源同时加热，并通过压力发生器暴露于高压。 这种用于微波加热和升高压力的组合限制了引入的翘曲量，同时防止在封装封装半导体结构的衬底的电绝缘粘合剂中形成空隙。

公开(公告)号：US08609462B2

公开(公告)日：2013-12-17

申请号：US13272032

申请日：2011-10-12

申请人： Meng-Tse Chen ,  Chun-Cheng Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Wei-Hung Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Chun-Cheng Lin ,  Kuei-Wei Huang ,  Yu-Peng Tsai ,  Wei-Hung Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： B23Q3/18 ,  H01L21/50 ,  H01L21/561 ,  H01L21/563 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75733 ,  H01L2224/75744 ,  H01L2224/75754 ,  H01L2224/7598 ,  H01L2224/75983 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/83862 ,  H01L2224/83868 ,  H01L2224/83874 ,  H01L2224/97 ,  H01L2924/3511 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/014

摘要： A method includes dispensing an underfill between a first package component and a second package component, wherein the first package component is placed on a lower jig, and the second package component is over and bonded to the first package component. A through-opening is in the lower jig and under the first package component. The underfill is cured, wherein during the step of curing the underfill, a force is applied to flatten the first package component. The force is applied by performing an action selected from the group consisting of vacuuming and air blowing through the through-opening.

公开(公告)号：US08603860B2

公开(公告)日：2013-12-10

申请号：US13280163

申请日：2011-10-24

申请人： Meng-Tse Chen ,  Kuei-Wei Huang ,  Wei-Hung Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Kuei-Wei Huang ,  Wei-Hung Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/75 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/75272 ,  H01L2224/75314 ,  H01L2224/75704 ,  H01L2224/7598 ,  H01L2224/81191 ,  H01L2224/81208 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2924/014

摘要： A method includes loading a first package component on a concave boat, and placing a second package component over the first package component. A load clamp is placed over the second package component, wherein the load clamp is supported by a temperature-variable spacer of the concave boat. A reflow step is performed to bond the second package component to the first package component. During a temperature-elevation step of the reflow step, the temperature-variable spacer is softened in response to an increase in temperature, and a height of the softened temperature-variable spacer is reduced, until the load clamp is stopped by a rigid spacer of the concave boat.

摘要翻译： 一种方法包括将第一包装部件装载在凹形船上，以及将第二包装部件放置在第一包装部件上。 负载夹具放置在第二包装部件上，其中负载夹具由凹形舟皿的温度可变的间隔件支撑。 执行回流步骤以将第二包装部件粘合到第一包装部件。 在回流步骤的升温步骤期间，温度可变的间隔件响应于温度升高而软化，并且软化的温度可变间隔件的高度减小，直到负载夹具被刚性间隔件 凹船。

公开(公告)号：US10192804B2

公开(公告)日：2019-01-29

申请号：US13544783

申请日：2012-07-09

申请人： Meng-Tse Chen ,  Wei-Hung Lin ,  Chih-Wei Lin ,  Kuei-Wei Huang ,  Hui-Min Huang ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Wei-Hung Lin ,  Chih-Wei Lin ,  Kuei-Wei Huang ,  Hui-Min Huang ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L29/49 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498

摘要： A device comprises a first package component, and a first metal trace and a second metal trace on a top surface of the first package component. The device further includes a dielectric mask layer covering the top surface of the first package component, the first metal trace and the second metal trace, wherein the dielectric mask layer has an opening therein exposing the first metal trace. The device also includes a second package component and an interconnect formed on the second package component, the interconnect having a metal bump and a solder bump formed on the metal bump, wherein the solder bump contacts the first metal trace in the opening of the dielectric mask layer.

公开(公告)号：US09412717B2

公开(公告)日：2016-08-09

申请号：US13289719

申请日：2011-11-04

申请人： Meng-Tse Chen ,  Hsiu-Jen Lin ,  Chun-Cheng Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Hsiu-Jen Lin ,  Chun-Cheng Lin ,  Wen-Hsiung Lu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/00 ,  H01L23/00 ,  B29C43/18 ,  H01L21/56 ,  B29C33/68

CPC分类号： H01L24/97 ,  B29C33/68 ,  B29C43/18 ,  H01L21/563 ,  H01L21/566 ,  H01L2224/16225 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/00

摘要： Methods and apparatus for a forming molded underfills. A method is disclosed including loading a flip chip substrate into a selected one of the upper mold chase and lower mold chase of a mold press at a first temperature; positioning a molded underfill material in the at least one of the upper and lower mold chases while maintaining the first temperature which is lower than a melting temperature of the molded underfill material; forming a sealed mold cavity and creating a vacuum in the mold cavity; raising the temperature of the molded underfill material to a second temperature greater than the melting point to cause the molded underfill material to flow over the flip chip substrate forming an underfill layer and forming an overmolded layer; and cooling the flip chip substrate to a third temperature substantially lower than the melting temperature of the molded underfill material. An apparatus is disclosed.

摘要翻译： 用于成型模制底部填料的方法和装置。 公开了一种方法，其包括在第一温度下将倒装芯片衬底加载到模压机的上模追逐和下模追逐中的所选择的一个中; 将模制的底部填充材料定位在上模具和下模具中的至少一个中，同时保持低于模制的底部填充材料的熔融温度的第一温度; 形成密封的模腔并在模腔中产生真空; 将模制的底部填充材料的温度提高到大于熔点的第二温度，以使模制的底部填充材料在形成底部填充层的倒装芯片衬底上流动并形成包覆成型层; 并将所述倒装芯片基板冷却至基本上低于所述模制底部填充材料的熔融温度的第三温度。 公开了一种装置。

公开(公告)号：US08884431B2

公开(公告)日：2014-11-11

申请号：US13228768

申请日：2011-09-09

申请人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Wen-Hsiung Lu ,  Hsiu-Jen Lin ,  Bor-Ping Jang ,  Chung-Shi Liu ,  Mirng-Ji Lii ,  Chen-Hua Yu ,  Meng-Tse Chen ,  Chun-Cheng Lin ,  Yu-Peng Tsai ,  Kuei-Wei Huang ,  Wei-Hung Lin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/683 ,  H01L23/498 ,  H01L21/56 ,  H01L25/065 ,  H01L23/538 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10 ,  H01L25/03 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/92 ,  H01L24/97 ,  H01L25/03 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68377 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/06515 ,  H01L2224/09181 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16238 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15322 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00

摘要： Packaging methods and structures for semiconductor devices are disclosed. In one embodiment, a packaged semiconductor device includes a redistribution layer (RDL) having a first surface and a second surface opposite the first surface. At least one integrated circuit is coupled to the first surface of the RDL, and a plurality of metal bumps is coupled to the second surface of the RDL. A molding compound is disposed over the at least one integrated circuit and the first surface of the RDL.

摘要翻译： 公开了用于半导体器件的封装方法和结构。 在一个实施例中，封装的半导体器件包括具有第一表面和与第一表面相对的第二表面的再分配层（RDL）。 至少一个集成电路耦合到RDL的第一表面，并且多个金属凸块耦合到RDL的第二表面。 模制化合物设置在RDL的至少一个集成电路和第一表面上。

公开(公告)号：US08586408B2

公开(公告)日：2013-11-19

申请号：US13291882

申请日：2011-11-08

申请人： Meng-Tse Chen ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chih Chun Chiu ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Meng-Tse Chen ,  Wei-Hung Lin ,  Kuei-Wei Huang ,  Chih-Wei Lin ,  Chih Chun Chiu ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/66 ,  H01L21/00

CPC分类号： H01L23/48 ,  H01L21/4853 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/49816 ,  H01L24/16 ,  H01L25/105 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/15321 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05647

摘要： A system and method for forming contacts is provided. An embodiment comprises forming the contacts on a substrate and then coining the contacts by physically shaping them using, e.g., a molding chamber. The physical shaping of the contacts may be performed using a patterned portion of the molding chamber or else by placing a patterned stencil around the contacts prior before a force is applied to physically reshape the contacts. The contacts may be reshaped into a cylindrical, oval, cuboid, or rectangular shape, for example.

摘要翻译： 提供一种用于形成触点的系统和方法。 一个实施例包括在基底上形成触点，然后通过使用例如模制室对它们进行物理成形来压接触点。 触点的物理成形可以使用模制室的图案化部分进行，或者在施加力以物理地重塑接触之前通过在接触件周围放置图案化模板。 触点可以重新成形为例如圆柱形，椭圆形，长方体形或矩形形状。

公开(公告)号：US20130260535A1

公开(公告)日：2013-10-03

申请号：US13476340

申请日：2012-05-21

申请人： Meng-Tse CHEN ,  Hui-Min HUANG ,  Chun-Cheng LIN ,  Chih-Chun CHIU ,  Ming-Da CHENG ,  Chung-Shi LIU

发明人： Meng-Tse CHEN ,  Hui-Min HUANG ,  Chun-Cheng LIN ,  Chih-Chun CHIU ,  Ming-Da CHENG ,  Chung-Shi LIU

IPC分类号： H01L21/78 ,  B29C53/16

CPC分类号： B29C53/18 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L23/295 ,  H01L23/3128 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75315 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2924/00

摘要： Embodiments of mechanisms for flattening a packaged structure are provided. The mechanisms involve a flattening apparatus and the utilization of protection layer(s) between the packaged structure and the surface(s) of the flattening apparatus. The protection layer(s) is made of a soft and non-sticking material to allow protecting exposed fragile elements of the packaged structure and easy separation after processing. The embodiments of flattening process involve flattening the warped packaged structure by pressure under elevated processing temperature. Processing under elevated temperature allows the package structure to be flattened within a reasonable processing time.

摘要翻译： 提供了用于使封装结构平坦化的机构的实施例。 这些机构涉及压平装置以及在封装结构和平坦化装置的表面之间利用保护层。 保护层由柔软和不粘的材料制成，以保护封装结构的暴露的易碎元件并且在加工之后易于分离。 扁平化过程的实施例涉及在升高的加工温度下通过压力使翘曲的包装结构变平。 在高温下进行处理可使包装结构在合理的处理时间内变平。