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1.发明申请公开(公告)号：US20150279794A1
公开(公告)日：2015-10-01
申请号：US14242008
申请日：2014-04-01
申请人： Roden R. Topacio , Suming Hu , Yip Seng Low
发明人： Roden R. Topacio , Suming Hu , Yip Seng Low
IPC分类号： H01L23/00
CPC分类号： H01L24/16 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L2224/02166 , H01L2224/0345 , H01L2224/0346 , H01L2224/03464 , H01L2224/0348 , H01L2224/03831 , H01L2224/03903 , H01L2224/0401 , H01L2224/05012 , H01L2224/05017 , H01L2224/05019 , H01L2224/05027 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05564 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05672 , H01L2224/05681 , H01L2224/085 , H01L2224/10126 , H01L2224/1146 , H01L2224/1148 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/14131 , H01L2224/16057 , H01L2224/16104 , H01L2224/16221 , H01L2224/16227 , H01L2224/165 , H01L2224/17104 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2924/12042 , H05K3/3436 , H05K3/4629 , H05K3/4644 , H05K3/4682 , H05K2201/10674 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01074 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012
摘要： Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.
摘要翻译： 公开了各种半导体芯片焊料凸块和底部金属化（UBM）结构及其制造方法。 一方面，提供了一种方法，其包括在半导体芯片上形成第一底部金属化层。 第一底部浸渍金属化层具有毂，从轮毂横向延伸的第一部分和将轮毂连接到第一部分的辐条。 将聚合物层施加到第一底部金属化层。 聚合物层包括与轮毂对准的第一开口和与轮辐对准的第二开口。 轮辐的一部分经由第二开口移除以切断轮毂与第一部分之间的连接。
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公开(公告)号：US08294266B2
公开(公告)日：2012-10-23
申请号：US13027076
申请日：2011-02-14
CPC分类号： H01L24/11 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05073 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/10126 , H01L2224/1132 , H01L2224/1147 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1411 , H01L2924/0001 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12044 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.
摘要翻译： 提供各种半导体管芯导体结构及其制造方法。 一方面，提供一种制造方法，其包括在半导体管芯的导体焊盘上形成导体结构。 导体层具有表面。 在导体层的表面上形成聚合物层，同时使表面的一部分露出。 在表面的暴露部分和聚合物层的一部分上形成焊料结构。
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公开(公告)号：US07906424B2
公开(公告)日：2011-03-15
申请号：US11832486
申请日：2007-08-01
CPC分类号： H01L24/11 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05073 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/10126 , H01L2224/1132 , H01L2224/1147 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1411 , H01L2924/0001 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12044 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.
摘要翻译： 提供各种半导体管芯导体结构及其制造方法。 一方面，提供一种制造方法，其包括在半导体管芯的导体焊盘上形成导体结构。 导体层具有表面。 在导体层的表面上形成聚合物层，同时使表面的一部分露出。 在表面的暴露部分和聚合物层的一部分上形成焊料结构。
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公开(公告)号：US20100155938A1
公开(公告)日：2010-06-24
申请号：US12339759
申请日：2008-12-19
申请人： Liane Martinez , Roden R. Topacio , Yip Seng Low
发明人： Liane Martinez , Roden R. Topacio , Yip Seng Low
IPC分类号： H01L23/498 , H01L21/60 , G06F19/00
CPC分类号： G06F17/5068 , H01L23/3128 , H01L23/49811 , H01L23/49816 , H01L23/525 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/85 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/02313 , H01L2224/02331 , H01L2224/0239 , H01L2224/0333 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05644 , H01L2224/05647 , H01L2224/1134 , H01L2224/11462 , H01L2224/13024 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/14135 , H01L2224/14136 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48599 , H01L2224/48624 , H01L2224/48639 , H01L2224/48644 , H01L2224/48647 , H01L2224/73207 , H01L2224/81121 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2224/85181 , H01L2224/85424 , H01L2224/85439 , H01L2224/92127 , H01L2224/92163 , H01L2224/94 , H01L2225/0651 , H01L2225/06513 , H01L2225/06527 , H01L2225/06568 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/01024 , H01L2224/11 , H01L2224/131 , H01L2924/00013 , H01L2924/00 , H01L2924/00012
摘要： An integrated circuit (IC) product includes a redistribution layer (RDL) having at least one conductive layer configured to distribute electrical information from one location to another location in the IC. The RDL also includes a plurality of wire bond pads and a plurality of solder pads. The plurality of solder pads each includes a solder wettable material that is in direct electrical communication with the RDL.
摘要翻译： 集成电路（IC）产品包括具有至少一个导电层的再分配层（RDL），该导电层被配置为将电信息从一个位置分配到IC中的另一个位置。 RDL还包括多个引线接合焊盘和多个焊盘。 多个焊盘各自包括与RDL直接电连通的焊料可润湿材料。
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公开(公告)号：US20170110428A1
公开(公告)日：2017-04-20
申请号：US15395859
申请日：2016-12-30
申请人： Roden R. Topacio , Suming Hu , Yip Seng Low
发明人： Roden R. Topacio , Suming Hu , Yip Seng Low
IPC分类号： H01L23/00
CPC分类号： H01L24/16 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L2224/02166 , H01L2224/0345 , H01L2224/0346 , H01L2224/03464 , H01L2224/0348 , H01L2224/03831 , H01L2224/03903 , H01L2224/0401 , H01L2224/05012 , H01L2224/05017 , H01L2224/05019 , H01L2224/05027 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05564 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05672 , H01L2224/05681 , H01L2224/085 , H01L2224/10126 , H01L2224/1146 , H01L2224/1148 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/14131 , H01L2224/16057 , H01L2224/16104 , H01L2224/16221 , H01L2224/16227 , H01L2224/165 , H01L2224/17104 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2924/12042 , H05K3/3436 , H05K3/4629 , H05K3/4644 , H05K3/4682 , H05K2201/10674 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01074 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012
摘要： Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.
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公开(公告)号：US20130147026A1
公开(公告)日：2013-06-13
申请号：US13323177
申请日：2011-12-12
申请人： Roden R. TOPACIO , Liane Martinez , Yip Seng Low
发明人： Roden R. TOPACIO , Liane Martinez , Yip Seng Low
CPC分类号： H01L23/36 , H01L23/3677 , H01L23/49816 , H01L23/49827 , H01L24/16 , H01L25/105 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/32225 , H01L2224/32245 , H01L2224/73204 , H01L2224/73253 , H01L2225/1023 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/15311 , H01L2924/15331 , H01L2924/18161 , H01L2924/3511 , H01L2924/00012 , H01L2224/0401 , H01L2924/00
摘要： According an embodiment, a package-on-package heatsink interposer for use between a top package and a bottom package of a package-on-package device, may include a top heatsink below the top package; an interposer substrate below the top heatsink; a bottom heatsink below the interposer substrate; a first interposer substrate metal layer between the interposer substrate and the top heatsink; a second interposer substrate metal layer between the interposer substrate and the bottom heatsink; and interposer solder balls between the second interposer substrate metal layer and the bottom package.
摘要翻译： 根据一个实施例，一种用于封装封装器件的顶部封装和底部封装之间的封装封装式散热器插入器可以包括位于顶部封装之下的顶部散热器; 位于顶部散热片下方的插入器基板; 位于插入器底部下方的底部散热器; 在所述插入器基板和所述顶部散热器之间的第一内插基板金属层; 在所述插入器基板和所述底部散热器之间的第二插入件基板金属层; 以及在第二插入器基板金属层和底部封装之间的插入件焊球。
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公开(公告)号：US20110147061A1
公开(公告)日：2011-06-23
申请号：US12641545
申请日：2009-12-18
申请人： Andrew K.W. Leung , Neil McLellan , Yip Seng Low
发明人： Andrew K.W. Leung , Neil McLellan , Yip Seng Low
CPC分类号： H01L23/49822 , H01L21/486 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/01322 , H01L2924/15311 , Y10T29/4913 , Y10T29/49155 , H01L2924/00
摘要： Various circuit boards and methods of manufacturing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first interconnect layer of a circuit board. The first interconnect layer includes a first conductor trace with a first segment that does not include a via land. A first via is formed on the first segment.
摘要翻译： 公开了各种电路板及其制造方法。 一方面，提供一种制造方法，包括形成电路板的第一互连层。 第一互连层包括具有不包括通孔焊盘的第一段的第一导体迹线。 第一通道形成在第一段上。
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公开(公告)号：US20090032940A1
公开(公告)日：2009-02-05
申请号：US11832486
申请日：2007-08-01
申请人： Roden R. Topacio , Neil McLellan , Yip Seng Low , Andrew KW Leung
发明人： Roden R. Topacio , Neil McLellan , Yip Seng Low , Andrew KW Leung
IPC分类号： H01L23/488 , H01L21/44 , H01L21/60
CPC分类号： H01L24/11 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0401 , H01L2224/05073 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05666 , H01L2224/10126 , H01L2224/1132 , H01L2224/1147 , H01L2224/13007 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/1411 , H01L2924/0001 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12044 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要： Various semiconductor die conductor structures and methods of fabricating the same are provided. In one aspect, a method of manufacturing is provided that includes forming a conductor structure on a conductor pad of a semiconductor die. The conductor layer has a surface. A polymeric layer is formed on the surface of the conductor layer while a portion of the surface is left exposed. A solder structure is formed on the exposed portion of the surface and a portion of the polymeric layer.
摘要翻译： 提供各种半导体管芯导体结构及其制造方法。 一方面，提供一种制造方法，其包括在半导体管芯的导体焊盘上形成导体结构。 导体层具有表面。 在导体层的表面上形成聚合物层，同时使表面的一部分露出。 在表面的暴露部分和聚合物层的一部分上形成焊料结构。
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9.发明授权公开(公告)号：US09576923B2
公开(公告)日：2017-02-21
申请号：US14242008
申请日：2014-04-01
申请人： Roden R. Topacio , Suming Hu , Yip Seng Low
发明人： Roden R. Topacio , Suming Hu , Yip Seng Low
CPC分类号： H01L24/16 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/17 , H01L24/81 , H01L2224/02166 , H01L2224/0345 , H01L2224/0346 , H01L2224/03464 , H01L2224/0348 , H01L2224/03831 , H01L2224/03903 , H01L2224/0401 , H01L2224/05012 , H01L2224/05017 , H01L2224/05019 , H01L2224/05027 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05166 , H01L2224/05564 , H01L2224/05639 , H01L2224/05644 , H01L2224/05655 , H01L2224/05672 , H01L2224/05681 , H01L2224/085 , H01L2224/10126 , H01L2224/1146 , H01L2224/1148 , H01L2224/11849 , H01L2224/131 , H01L2224/13111 , H01L2224/14131 , H01L2224/16057 , H01L2224/16104 , H01L2224/16221 , H01L2224/16227 , H01L2224/165 , H01L2224/17104 , H01L2224/81191 , H01L2224/81193 , H01L2224/81815 , H01L2924/12042 , H05K3/3436 , H05K3/4629 , H05K3/4644 , H05K3/4682 , H05K2201/10674 , H01L2924/00 , H01L2924/00014 , H01L2924/014 , H01L2924/01074 , H01L2924/01082 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012
摘要： Various semiconductor chip solder bump and underbump metallization (UBM) structures and methods of making the same are disclosed. In one aspect, a method is provided that includes forming a first underbump metallization layer on a semiconductor chip is provided. The first underbump metallization layer has a hub, a first portion extending laterally from the hub, and a spoke connecting the hub to the first portion. A polymer layer is applied to the first underbump metallization layer. The polymer layer includes a first opening in alignment with the hub and a second opening in alignment with the spoke. A portion of the spoke is removed via the second opening to sever the connection between the hub and the first portion.
摘要翻译： 公开了各种半导体芯片焊料凸块和底部金属化（UBM）结构及其制造方法。 一方面，提供了一种方法，其包括在半导体芯片上形成第一底部金属化层。 第一底部浸渍金属化层具有毂，从轮毂横向延伸的第一部分和将轮毂连接到第一部分的辐条。 将聚合物层施加到第一底部金属化层。 聚合物层包括与轮毂对准的第一开口和与轮辐对准的第二开口。 轮辐的一部分经由第二开口移除以切断轮毂与第一部分之间的连接。
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公开(公告)号：US08772083B2
公开(公告)日：2014-07-08
申请号：US13229687
申请日：2011-09-10
CPC分类号： H01L23/49811 , H01L21/563 , H01L23/3142 , H01L23/49894 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/92 , H01L2224/0401 , H01L2224/05567 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13022 , H01L2224/131 , H01L2224/16237 , H01L2224/2919 , H01L2224/32225 , H01L2224/73204 , H01L2224/81401 , H01L2224/81815 , H01L2224/83104 , H01L2224/83385 , H01L2224/83862 , H01L2224/92125 , H01L2924/00014 , H01L2924/12042 , H01L2924/15311 , H01L2224/16225 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2924/0665 , H01L2224/05552
摘要： Various substrates or circuit boards for receiving a semiconductor chip and methods of processing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a first opening in a solder mask positioned on a side of a substrate. The first opening does not extend to the side. A second opening is formed in the solder mask that extends to the side. The first opening may serve as an underfill anchor site.
摘要翻译： 公开了用于接收半导体芯片的各种基板或电路板及其处理方法。 一方面，提供了一种制造方法，其包括在位于基板的侧面上的焊料掩模中形成第一开口。 第一个开口不延伸到一边。 在向侧面延伸的焊料掩模中形成第二开口。 第一个开口可以作为底部填充锚点。
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