DIE EDGE SEAL EMPLOYING LOW-K DIELECTRIC MATERIAL
    1.
    发明申请
    DIE EDGE SEAL EMPLOYING LOW-K DIELECTRIC MATERIAL 有权
    DIE EDGE密封采用低K电介质材料

    公开(公告)号:US20150371957A1

    公开(公告)日:2015-12-24

    申请号:US14555558

    申请日:2014-11-26

    IPC分类号: H01L23/00

    摘要: A semiconductor wafer has a multi-stage structure that damps and contains nascent cracks generated during dicing and inhibits moisture penetration into the active region of a die. The wafer includes an array of die regions separated by scribe lanes. The die regions include an active region and a first ring that surrounds the active region. A portion of the first ring includes a low-k dielectric material. A second ring includes a stack of alternating layers of metal and interlayer dielectric (ILD) material. A dummy metal region around the rings includes a stacked dummy metal features and surrounds the active region. A regular or irregular staggered arrangement of saw grid process control (SGPC) features reduces mechanical stress during dicing.

    摘要翻译: 半导体晶片具有多级结构,其能够阻止并包含切割期间产生的新生裂纹并且抑制水分渗透到模具的有源区域。 该晶片包括由划线所隔开的芯片区域阵列。 管芯区域包括有源区和围绕有源区的第一环。 第一环的一部分包括低k电介质材料。 第二环包括金属和层间电介质(ILD)材料的交替层叠。 围绕环的虚设金属区域包括堆叠的虚拟金属特征并围绕有源区域。 锯格过程控制(SGPC)特征的规则或不规则交错排列降低了切割时的机械应力。