-
公开(公告)号:US09735113B2
公开(公告)日:2017-08-15
申请号:US12786008
申请日:2010-05-24
申请人: HeeJo Chi , NamJu Cho , JunWoo Myung
发明人: HeeJo Chi , NamJu Cho , JunWoo Myung
IPC分类号: H01L25/065 , H01L21/60 , H01L23/538 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/552 , H05K1/18 , H01L23/31 , H01L23/367 , H01L23/498 , H01L23/00 , H05K3/00 , H05K3/42
CPC分类号: H01L23/5389 , H01L21/4846 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3107 , H01L23/3128 , H01L23/3672 , H01L23/49816 , H01L23/49827 , H01L23/552 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/82 , H01L24/95 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2221/68359 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1184 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/21 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/2405 , H01L2224/245 , H01L2224/25171 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/45099 , H01L2224/4805 , H01L2224/48091 , H01L2224/481 , H01L2224/48105 , H01L2224/48158 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/48245 , H01L2224/48247 , H01L2224/73207 , H01L2224/73209 , H01L2224/73215 , H01L2224/73265 , H01L2224/81005 , H01L2224/81411 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81801 , H01L2224/82106 , H01L2224/8385 , H01L2224/95001 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06537 , H01L2225/06568 , H01L2225/06589 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2924/3512 , H05K1/185 , H05K3/0052 , H05K3/007 , H05K3/426 , H01L2924/0665 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.
-
2.Semiconductor Device and Method of Forming Ultra Thin Multi-Die Face-to-Face WLCSP 有权
标题翻译: 半导体器件和形成超薄多模面对面WLCSP的方法公开(公告)号:US20110285007A1
公开(公告)日:2011-11-24
申请号:US12786008
申请日:2010-05-24
申请人: HeeJo Chi , NamJu Cho , JunWoo Myung
发明人: HeeJo Chi , NamJu Cho , JunWoo Myung
IPC分类号: H01L25/065 , H01L23/52 , H01L23/36 , H01L21/60
CPC分类号: H01L23/5389 , H01L21/4846 , H01L21/561 , H01L21/568 , H01L21/6835 , H01L23/3107 , H01L23/3128 , H01L23/3672 , H01L23/49816 , H01L23/49827 , H01L23/552 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/19 , H01L24/20 , H01L24/24 , H01L24/25 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L24/82 , H01L24/95 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L2221/68327 , H01L2221/68359 , H01L2221/68363 , H01L2221/68372 , H01L2221/68381 , H01L2221/68386 , H01L2224/0401 , H01L2224/04042 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/1132 , H01L2224/11334 , H01L2224/1134 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1184 , H01L2224/11849 , H01L2224/11901 , H01L2224/12105 , H01L2224/131 , H01L2224/13111 , H01L2224/13113 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/21 , H01L2224/2101 , H01L2224/2105 , H01L2224/211 , H01L2224/215 , H01L2224/22 , H01L2224/221 , H01L2224/24011 , H01L2224/2405 , H01L2224/245 , H01L2224/25171 , H01L2224/29144 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/45099 , H01L2224/4805 , H01L2224/48091 , H01L2224/481 , H01L2224/48105 , H01L2224/48158 , H01L2224/48175 , H01L2224/48227 , H01L2224/48228 , H01L2224/48245 , H01L2224/48247 , H01L2224/73207 , H01L2224/73209 , H01L2224/73215 , H01L2224/73265 , H01L2224/81005 , H01L2224/81411 , H01L2224/81424 , H01L2224/81439 , H01L2224/81444 , H01L2224/81447 , H01L2224/81455 , H01L2224/81801 , H01L2224/82106 , H01L2224/8385 , H01L2224/95001 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06537 , H01L2225/06568 , H01L2225/06589 , H01L2924/00 , H01L2924/00012 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/09701 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2924/3512 , H05K1/185 , H05K3/0052 , H05K3/007 , H05K3/426 , H01L2924/0665 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.
摘要翻译: 半导体器件具有堆叠在安装到临时载体上的第二半导体管芯上的第一半导体管芯。 在第一半导体管芯的有源表面周围形成有多个凸块,该周边围绕第二半导体管芯。 密封剂沉积在第一和第二半导体管芯和载体上。 通过围绕第一和第二半导体管芯的密封剂形成多个导电通孔。 去除一部分密封剂和第一和第二半导体管芯的后表面的一部分。 在密封剂和第一或第二半导体管芯的后表面上形成互连结构。 互连结构电连接到导电通孔。 载体被移除。 可以在密封剂和第一半导体管芯上形成散热器或屏蔽层。
-