摘要:
Example embodiments of the present invention may include a printed circuit board, a method of manufacturing the printed circuit board, and a memory module/socket assembly. Example embodiments of the present invention may increase the number of contact taps on a memory module, in addition, a force required to insert the memory module into a module socket may be decreased.
摘要:
Example embodiments of the present invention may include a printed circuit board, a method of manufacturing the printed circuit board, and a memory module/socket assembly. Example embodiments of the present invention may increase the number of contact taps on a memory module, in addition, a force required to insert the memory module into a module socket may be decreased.
摘要:
In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.
摘要:
A method of forming at least one bonding structure may be provided. A ball may be formed on the front end of a wire outside a capillary. The capillary may be moved downwardly to form a preliminary compressed ball on a first pad using the ball. The capillary may be moved upwardly to form a neck portion on the preliminary compressed ball using the preliminary compressed ball and the wire. The capillary may be moved obliquely and downwardly to form a compressed ball. The capillary may extend the wire from the compressed ball to a second pad.
摘要:
A semiconductor package and method of fabricating the same. The semiconductor package includes a first semiconductor package, a second semiconductor package stacked on the first semiconductor package, and a first electrical connector interposed between the first and second semiconductor packages to electrically connect the first and second semiconductor packages.
摘要:
A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a circuit unit on an upper surface thereof, a metal pad electrically connected to the circuit unit, and a passivation layer that covers the circuit unit and exposes the metal pad, forming a first re-wiring layer that is electrically connected to the metal pad and is formed by a printing method to extend from the metal pad on the passivation layer and forming a second re-wiring layer on the first re-wiring layer using the first re-wiring layer as a seed by using an electro-plating process.
摘要:
A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a circuit unit on an upper surface thereof, a metal pad electrically connected to the circuit unit, and a passivation layer that covers the circuit unit and exposes the metal pad, forming a first re-wiring layer that is electrically connected to the metal pad and is formed by a printing method to extend from the metal pad on the passivation layer and forming a second re-wiring layer on the first re-wiring layer using the first re-wiring layer as a seed by using an electro-plating process.
摘要:
In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector.
摘要:
A method of forming at least one bonding structure may be provided. A ball may be formed on the front end of a wire outside a capillary. The capillary may be moved downwardly to form a preliminary compressed ball on a first pad using the ball. The capillary may be moved upwardly to form a neck portion on the preliminary compressed ball using the preliminary compressed ball and the wire. The capillary may be moved obliquely and downwardly to form a compressed ball. The capillary may extend the wire from the compressed ball to a second pad.
摘要:
A method and apparatus to manufacture a flip chip package includes dotting a flux on a first preliminary bump of a package substrate, attaching a preliminary bump of a first semiconductor chip to the first preliminary bump of the package substrate via the flux, dotting a flux on a second preliminary bump of the package substrate, and attaching a preliminary bump of a second semiconductor chip to the second preliminary bump of the package substrate via the flux. Accordingly, an evaporation of the flux on the preliminary bump of the package substrate may be suppressed.