-
公开(公告)号：US5300812A
公开(公告)日：1994-04-05
申请号：US987849
申请日：1992-12-09
CPC分类号： C08K5/0016 , C09J179/08 , H01L21/481 , H01L23/10 , H01L24/24 , H01L24/75 , H01L24/82 , H01L24/83 , H01L2224/24227 , H01L2224/2919 , H01L2224/32225 , H01L2224/73267 , H01L2224/75315 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/0132 , H01L2924/0665 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165
摘要： A plasticized polyetherimide, such as a blend of polyetherimide and a pentaerythritol tetrabenzoate ester, has been found useful as a low temperature laminating adhesive for making high density interconnect circuit arrays.
摘要翻译： 已经发现增塑聚醚酰亚胺，例如聚醚酰亚胺和季戊四醇四苯甲酸酯的共混物可用作制备高密度互连电路阵列的低温层压粘合剂。
-
公开(公告)号：US5554305A
公开(公告)日：1996-09-10
申请号：US411178
申请日：1995-03-27
IPC分类号： B32B7/02 , B32B18/00 , H01L21/48 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/00 , H05K3/38 , H01L21/3105
CPC分类号： H05K1/0313 , H01L21/481 , H01L23/49894 , H01L23/5389 , H01L24/24 , H01L24/82 , H05K1/024 , H05K1/0373 , H05K3/0032 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01052 , H01L2924/01074 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K2201/0116 , H05K2201/015 , H05K2201/0158 , H05K2203/083 , H05K2203/122 , H05K3/386 , Y10S521/918 , Y10T29/49124 , Y10T29/49155
摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.
-
公开(公告)号：US5449427A
公开(公告)日：1995-09-12
申请号：US247820
申请日：1994-05-23
IPC分类号： B32B7/02 , B32B18/00 , H01L21/48 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/00 , H05K3/38 , B32B31/12 , B32B31/14
CPC分类号： H05K1/0313 , H01L21/481 , H01L23/49894 , H01L23/5389 , H01L24/24 , H01L24/82 , H05K1/024 , H05K1/0373 , H05K3/0032 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01052 , H01L2924/01074 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K2201/0116 , H05K2201/015 , H05K2201/0158 , H05K2203/083 , H05K2203/122 , H05K3/386 , Y10S521/918 , Y10T29/49124 , Y10T29/49155
摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.
摘要翻译： 用于处理低介电常数材料的方法包括将添加剂材料分散在多孔低介电常数层中，制造所需的电子结构，然后从低介电常数层的孔中除去添加剂材料。 从孔中去除添加剂材料可以通过升华，蒸发和扩散来实现。 用于低介电常数层的应用包括用作互连由衬底支撑的电路芯片和用作印刷电路板材料的覆盖层的用途。
-
4.发明授权
公开(公告)号：US5401687A
公开(公告)日：1995-03-28
申请号：US46299
申请日：1993-04-15
IPC分类号： H01L21/768 , H01L23/482 , H01L23/538 , H01L21/28 , H01L21/56 , H01L21/58 , H01L21/60
CPC分类号： H01L24/82 , H01L23/4821 , H01L23/5381 , H01L24/24 , H01L2224/24227 , H01L2224/82039 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01011 , H01L2924/01013 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787
摘要： In a method for preserving an air bridge structure on an integrated circuit chip used in an overlay process, a patternable protective layer is applied for providing mechanical strength to prevent deformation during subsequent processing. A polymeric film layer is applied over the chip and protective layer, and interconnections are fabricated through the polymeric film layer. The polymeric film layer is removed from the area over the air bridge structure. The patternable protective layer is then removed, leaving the resultant structure with an undamaged air bridge which is free of residue.
摘要翻译： 在用于在覆盖工艺中使用的集成电路芯片上保留空气桥结构的方法中，施加可图案化的保护层以提供机械强度以防止后续处理期间的变形。 将聚合物膜层施加在芯片和保护层上，并且通过聚合物膜层制造互连。 从空气桥结构上的区域去除聚合物膜层。 然后去除可图案化的保护层，使得所得结构具有没有残留物的未损坏的空气桥。
-
公开(公告)号：US5576517A
公开(公告)日：1996-11-19
申请号：US411176
申请日：1995-03-27
IPC分类号： B32B7/02 , B32B18/00 , H01L21/48 , H01L21/60 , H01L23/498 , H01L23/538 , H05K1/02 , H05K1/03 , H05K3/00 , H05K3/38 , H05K1/18
CPC分类号： H05K1/0313 , H01L21/481 , H01L23/49894 , H01L23/5389 , H01L24/24 , H01L24/82 , H05K1/024 , H05K1/0373 , H05K3/0032 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01052 , H01L2924/01074 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/3011 , H05K2201/0116 , H05K2201/015 , H05K2201/0158 , H05K2203/083 , H05K2203/122 , H05K3/386 , Y10S521/918 , Y10T29/49124 , Y10T29/49155
摘要： An electronic structure includes a circuit chip having chip pads and supported by a substrate, and a low dielectric constant porous polymer layer having pores and situated over the substrate and circuit chip. The porous polymer layer has at least one via therein aligned with at least one of the chip pads, and a pattern of electrical conductors extends over a portion of the porous polymer layer and into the at least one via. The pattern of electrical conductors does not significantly protrude into the pores of the porous polymer layer.
摘要翻译： 电子结构包括具有芯片焊盘并由衬底支撑的电路芯片，以及具有孔并位于衬底和电路芯片上的低介电常数多孔聚合物层。 多孔聚合物层具有与至少一个芯片焊盘对准的至少一个通孔，并且电导体图案在多孔聚合物层的一部分上延伸到至少一个通孔中。 电导体的图案不会显着地突出到多孔聚合物层的孔中。
-
公开(公告)号：US5302547A
公开(公告)日：1994-04-12
申请号：US14609
申请日：1993-02-08
申请人： Robert J. Wojnarowski , Herbert S. Cole , Richard J. Saia , Thomas B. Gorczyca , Ernest W. Balch
发明人： Robert J. Wojnarowski , Herbert S. Cole , Richard J. Saia , Thomas B. Gorczyca , Ernest W. Balch
IPC分类号： H01L23/12 , H01L21/268 , H01L21/302 , H01L21/311 , H01L21/48 , H01L21/768 , H01L23/538 , H05K1/03 , H05K3/00 , H01L21/283 , H01L21/306
CPC分类号： H05K3/0041 , H01L21/31138 , H01L21/486 , H01L21/76802 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L2224/0401 , H01L2224/04105 , H01L2224/1147 , H01L2224/2402 , H01L2224/24227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01075 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/30105 , H01L2924/3011 , H05K1/036 , H05K2201/0166 , H05K2201/0195 , H05K3/0032 , Y10S438/94 , Y10S438/945
摘要： A differentiable ablation approach to patterning dielectrics which are not of the same absorbance uses an absorbant dielectric at a specified laser wavelength over a non-absorbant dielectric at that wavelength. The absorbant dielectric may be laser-patterned and become an integral mask enabling plasma etching of the underlying non-absorbant dielectric. If the patterning of the absorbant dielectric involves vias, polymer ridges formed around via surfaces during laser patterning may be removed at the same time the underlying non-absorbant dielectric is etched using a transparent, oxygen plasma resistant mask. Alternatively, an inert mask may be used instead of the absorbant dielectric to allow plasma etching of the non-absorbant dielectric.
摘要翻译： 对于不相同吸光度的电介质图案的可微分消融方法，在该波长处的非吸收性电介质上使用指定的激光波长的吸收介质。 吸收介质可以是激光图案化的，并且成为能够对下面的非吸收性电介质进行等离子体蚀刻的整体掩模。 如果吸收介质的图案化涉及通孔，则可以在激光图案化期间在通孔表面周围形成的聚合物脊在同时使用透明的耐氧等离子体掩模蚀刻下面的非吸收性电介质。 或者，可以使用惰性掩模来代替吸收介质，以允许对非吸收性介质的等离子体蚀刻。
-
公开(公告)号：US06715200B2
公开(公告)日：2004-04-06
申请号：US09846888
申请日：2001-05-01
申请人： Thomas P. Feist , Wit C. Bushko , Herbert S. Cole , John E. Davis , Thomas B. Gorczyca , Joseph T. Woods
发明人： Thomas P. Feist , Wit C. Bushko , Herbert S. Cole , John E. Davis , Thomas B. Gorczyca , Joseph T. Woods
IPC分类号： H01F300
CPC分类号： B82Y30/00 , B29C43/021 , B29C2043/025 , B29D17/005 , B29L2017/005 , B82Y10/00 , G11B5/72 , G11B5/73 , G11B5/7315 , G11B5/84 , G11B5/8404 , G11B5/855 , G11B7/24038 , G11B7/24047 , G11B7/24056 , G11B7/253 , G11B7/2531 , G11B7/2532 , G11B7/2533 , G11B7/2534 , G11B7/2536 , G11B7/2542 , G11B7/2548 , G11B7/2578 , G11B7/258 , G11B7/259 , G11B7/26 , G11B7/263 , G11B11/10582 , G11B11/10584 , G11B11/10586 , G11B2007/25708 , G11B2007/25713 , G11C13/02 , G11C13/025 , Y10T29/49002 , Y10T29/4902 , Y10T29/4903 , Y10T29/49043 , Y10T29/49069 , Y10T29/49158 , Y10T29/49172 , Y10T29/49176 , Y10T156/1002 , Y10T428/24355 , Y10T428/24479 , Y10T428/24967 , Y10T428/265 , Y10T428/266 , Y10T428/31 , Y10T428/3154
摘要： Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500&mgr; under shock or vibration excitation.
摘要翻译： 本文公开了形成数据存储介质和由此形成的介质的方法。 在一个实施例中，用于形成数据存储介质的方法包括：注射成型包含表面特征的基底，其中所述表面特征具有大于原始主体的表面特征复制的大约90％ 以及在所述衬底的至少一个表面上设置数据层; 其中所述数据存储介质在冲击或振动激励下具有小于约500mu的轴向位移峰。
-
公开(公告)号：US20080201937A1
公开(公告)日：2008-08-28
申请号：US11873782
申请日：2007-10-17
申请人： Thomas P. Feist , Wit C. Bushko , Herbert S. Cole , John E. Davis , Thomas B. Gorczyca , Joseph T. Woods
发明人： Thomas P. Feist , Wit C. Bushko , Herbert S. Cole , John E. Davis , Thomas B. Gorczyca , Joseph T. Woods
IPC分类号： H01F7/06
CPC分类号： B82Y30/00 , B29C43/021 , B29C2043/025 , B29D17/005 , B29L2017/005 , B82Y10/00 , G11B5/72 , G11B5/73 , G11B5/7315 , G11B5/84 , G11B5/8404 , G11B5/855 , G11B7/24038 , G11B7/24047 , G11B7/24056 , G11B7/253 , G11B7/2531 , G11B7/2532 , G11B7/2533 , G11B7/2534 , G11B7/2536 , G11B7/2542 , G11B7/2548 , G11B7/2578 , G11B7/258 , G11B7/259 , G11B7/26 , G11B7/263 , G11B11/10582 , G11B11/10584 , G11B11/10586 , G11B2007/25708 , G11B2007/25713 , G11C13/02 , G11C13/025 , Y10T29/49002 , Y10T29/4902 , Y10T29/4903 , Y10T29/49043 , Y10T29/49069 , Y10T29/49158 , Y10T29/49172 , Y10T29/49176 , Y10T156/1002 , Y10T428/24355 , Y10T428/24479 , Y10T428/24967 , Y10T428/265 , Y10T428/266 , Y10T428/31 , Y10T428/3154
摘要： Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500μ under shock or vibration excitation when excited by a 1 G sinusoidal loading.
摘要翻译： 本文公开了形成数据存储介质和由此形成的介质的方法。 在一个实施例中，用于形成数据存储介质的方法包括：注射成型包含表面特征的基底，其中所述表面特征具有大于原始主体的表面特征复制的大约90％ 以及在所述衬底的至少一个表面上设置数据层; 其中所述数据存储介质在由G G正弦负载激励时，在冲击或振动激励下具有小于约500mu的轴向位移峰。
-
公开(公告)号：US07299535B2
公开(公告)日：2007-11-27
申请号：US10757877
申请日：2004-01-14
申请人： Thomas P. Feist , Wit C. Bushko , Herbert S. Cole , John E. Davis , Thomas B. Gorczyca , Joseph T. Woods
发明人： Thomas P. Feist , Wit C. Bushko , Herbert S. Cole , John E. Davis , Thomas B. Gorczyca , Joseph T. Woods
CPC分类号： B82Y30/00 , B29C43/021 , B29C2043/025 , B29D17/005 , B29L2017/005 , B82Y10/00 , G11B5/72 , G11B5/73 , G11B5/7315 , G11B5/84 , G11B5/8404 , G11B5/855 , G11B7/24038 , G11B7/24047 , G11B7/24056 , G11B7/253 , G11B7/2531 , G11B7/2532 , G11B7/2533 , G11B7/2534 , G11B7/2536 , G11B7/2542 , G11B7/2548 , G11B7/2578 , G11B7/258 , G11B7/259 , G11B7/26 , G11B7/263 , G11B11/10582 , G11B11/10584 , G11B11/10586 , G11B2007/25708 , G11B2007/25713 , G11C13/02 , G11C13/025 , Y10T29/49002 , Y10T29/4902 , Y10T29/4903 , Y10T29/49043 , Y10T29/49069 , Y10T29/49158 , Y10T29/49172 , Y10T29/49176 , Y10T156/1002 , Y10T428/24355 , Y10T428/24479 , Y10T428/24967 , Y10T428/265 , Y10T428/266 , Y10T428/31 , Y10T428/3154
摘要： Methods for forming data storage media and the media formed thereby are disclosed herein. In one embodiment, the method for forming a data storage media, comprises: injection molding a substrate comprising surface features, wherein said surface features have greater than about 90% of a surface feature replication of an original master; and disposing a data layer over at least one surface of said substrate; wherein said data storage media has an axial displacement peak of less than about 500μ under shock or vibration excitation.
摘要翻译： 本文公开了形成数据存储介质和由此形成的介质的方法。 在一个实施例中，用于形成数据存储介质的方法包括：注射成型包含表面特征的基底，其中所述表面特征具有大于原始主体的表面特征复制的大约90％ 以及在所述衬底的至少一个表面上设置数据层; 其中所述数据存储介质在冲击或振动激励下具有小于约500mu的轴向位移峰。
-
公开(公告)号：US5169678A
公开(公告)日：1992-12-08
申请号：US456421
申请日：1989-12-26
IPC分类号： C08K5/00 , B23K26/00 , B23K26/18 , B23K26/40 , C08J7/00 , C08J7/04 , C08K5/22 , C08L101/00 , C09D201/00 , G03F7/039 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/311 , H01L23/12 , H01L23/538 , H01L25/04 , H01L25/18
CPC分类号： G03F7/039 , G03F7/2053 , H01L21/31127 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L2224/24227 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/12042 , H01L2924/14 , Y10S430/146
摘要： The ultraviolet absorption characteristics of a polymer material are modified by the addition of an ultraviolet absorbing dye to render it laser ablatable at a frequency at which the unmodified material is substantially non-laser ablatable.
-
-
-
-
-
-
-
-
-
搜索结果
29 条记录 (耗时 0.028 秒)
