公开(公告)号：US5302547A

公开(公告)日：1994-04-12

申请号：US14609

申请日：1993-02-08

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Richard J. Saia ,  Thomas B. Gorczyca ,  Ernest W. Balch

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Richard J. Saia ,  Thomas B. Gorczyca ,  Ernest W. Balch

IPC分类号： H01L23/12 ,  H01L21/268 ,  H01L21/302 ,  H01L21/311 ,  H01L21/48 ,  H01L21/768 ,  H01L23/538 ,  H05K1/03 ,  H05K3/00 ,  H01L21/283 ,  H01L21/306

CPC分类号： H05K3/0041 ,  H01L21/31138 ,  H01L21/486 ,  H01L21/76802 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/1147 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/30105 ,  H01L2924/3011 ,  H05K1/036 ,  H05K2201/0166 ,  H05K2201/0195 ,  H05K3/0032 ,  Y10S438/94 ,  Y10S438/945

摘要： A differentiable ablation approach to patterning dielectrics which are not of the same absorbance uses an absorbant dielectric at a specified laser wavelength over a non-absorbant dielectric at that wavelength. The absorbant dielectric may be laser-patterned and become an integral mask enabling plasma etching of the underlying non-absorbant dielectric. If the patterning of the absorbant dielectric involves vias, polymer ridges formed around via surfaces during laser patterning may be removed at the same time the underlying non-absorbant dielectric is etched using a transparent, oxygen plasma resistant mask. Alternatively, an inert mask may be used instead of the absorbant dielectric to allow plasma etching of the non-absorbant dielectric.

摘要翻译： 对于不相同吸光度的电介质图案的可微分消融方法，在该波长处的非吸收性电介质上使用指定的激光波长的吸收介质。 吸收介质可以是激光图案化的，并且成为能够对下面的非吸收性电介质进行等离子体蚀刻的整体掩模。 如果吸收介质的图案化涉及通孔，则可以在激光图案化期间在通孔表面周围形成的聚合物脊在同时使用透明的耐氧等离子体掩模蚀刻下面的非吸收性电介质。 或者，可以使用惰性掩模来代替吸收介质，以允许对非吸收性介质的等离子体蚀刻。

公开(公告)号：US5567657A

公开(公告)日：1996-10-22

申请号：US567386

申请日：1995-12-04

申请人： Robert J. Wojnarowski ,  Thomas B. Gorczyca

发明人： Robert J. Wojnarowski ,  Thomas B. Gorczyca

IPC分类号： H01L23/538 ,  H01L25/065 ,  H05K1/18 ,  H01L21/60

CPC分类号： H01L24/76 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/82 ,  H01L25/0652 ,  H05K1/185 ,  H05K1/186 ,  H01L2224/18 ,  H01L2224/92144 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H05K2201/10674 ,  H05K3/4611 ,  Y10S438/928

摘要： First and second flexible interconnect structures are provided and each includes a flexible interconnect layer and a chip with a surface having chip pads attached to the flexible interconnect layer. Molding material is inserted between the flexible interconnect layers for encapsulating the respective chips. Vias in the flexible interconnect layers are formed to extend to selected chip pads, and a pattern of electrical conductors is applied which extends over the flexible interconnect layers and into the vias to couple selected ones of the chip pads.

摘要翻译： 提供了第一和第二柔性互连结构，并且每个包括柔性互连层和具有连接到柔性互连层的具有芯片焊盘的表面的芯片。 将成型材料插入在柔性互连层之间以封装相应的芯片。 柔性互连层中的通孔被形成为延伸到选定的芯片焊盘，并且施加电导体图案，该图案在柔性互连层上延伸并穿过通孔以耦合选定的芯片焊盘。

公开(公告)号：US5546654A

公开(公告)日：1996-08-20

申请号：US297076

申请日：1994-08-29

申请人： Robert J. Wojnarowski ,  Thomas B. Gorczyca

发明人： Robert J. Wojnarowski ,  Thomas B. Gorczyca

IPC分类号： H05K1/18 ,  H05K3/28 ,  H05K3/30 ,  B23P19/04 ,  H05K3/42

CPC分类号： H05K3/284 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2924/15153 ,  H05K1/182 ,  Y10S29/044 ,  Y10T279/11 ,  Y10T29/49146 ,  Y10T29/49165 ,  Y10T29/53191

摘要： A method for fabricating an electronic assembly comprises attaching an insulative film to a frame and positioning at least one electronic component having a face with connections pads face down on the insulative film. The insulative film is positioned on a porous sheet supported by a vacuum fixture. The porous sheet and vacuum fixture are adapted so as to be capable of creating vacuum conditions for holding the insulative film with a substantially flat surface on the porous sheet. A vacuum is created within the vacuum chamber for flatly holding the insulative film on the porous sheet. A substrate is applied to the insulative film and the at least one electronic component. In one embodiment the substrate is applied by securing the insulative film in position with a mold form having at least one opening around the electronic component and adding substrate molding material at least partially around the component through the opening. In another embodiment the substrate is applied by providing a substrate having at least one well therein and positioning the insulative film over at least a portion of the substrate and the electronic component into the well.

摘要翻译： 一种用于制造电子组件的方法包括将绝缘膜附接到框架并且将至少一个具有面的电子部件定位在绝缘膜上，连接焊盘面向下。 绝缘膜位于由真空夹具支撑的多孔片上。 多孔片材和真空固定装置适于能够产生用于将绝缘膜保持在多孔片材上具有基本平坦的表面的真空条件。 在真空室内产生真空，以将绝缘膜平坦地保持在多孔片上。 将衬底施加到绝缘膜和至少一个电子部件。 在一个实施例中，通过用绝缘膜将电绝缘薄膜固定在适当的位置上来施加基底，该模具形式具有围绕电子部件的至少一个开口，并且通过该开口至少部分地围绕该部件添加基底模制材料。 在另一个实施例中，通过提供其中具有至少一个阱的衬底并将绝缘膜定位在衬底和电子部件的至少一部分进入阱中来施加衬底。

公开(公告)号：US5161093A

公开(公告)日：1992-11-03

申请号：US546959

申请日：1990-07-02

申请人： Thomas B. Gorczyca ,  Stanton E. Weaver, Jr. ,  Robert J. Wojnarowski

发明人： Thomas B. Gorczyca ,  Stanton E. Weaver, Jr. ,  Robert J. Wojnarowski

IPC分类号： H01L23/12 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498 ,  H01L23/538 ,  H01L25/00 ,  H01L25/04 ,  H01L25/18 ,  H05K3/38 ,  H05K3/46

CPC分类号： H01L24/25 ,  H01L21/4857 ,  H01L23/49894 ,  H01L23/5383 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H01L2924/3011

摘要： A high density interconnect structure incorporating a plurality of laminated dielectric layers is fabricated using a SPI/epoxy crosslinking copolymer blend adhesive in order to maintain the stability of the already fabricated structure during the addition of the later laminations while also maintaining the repairability of the high density interconnect structure.

公开(公告)号：US5353498A

公开(公告)日：1994-10-11

申请号：US87434

申请日：1993-07-09

申请人： Raymond A. Fillion ,  Robert J. Wojnarowski ,  Michael Gdula ,  Herbert S. Cole ,  Eric J. Wildi ,  Wolfgang Daum

发明人： Raymond A. Fillion ,  Robert J. Wojnarowski ,  Michael Gdula ,  Herbert S. Cole ,  Eric J. Wildi ,  Wolfgang Daum

IPC分类号： H01L23/52 ,  H01L21/56 ,  H01L21/58 ,  H01L21/68 ,  H01L23/29 ,  H01L23/433 ,  H01L23/538 ,  H01L25/04 ,  H01L25/065 ,  H01L25/18 ,  H05K3/34

CPC分类号： H01L21/568 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/295 ,  H01L23/4334 ,  H01L23/538 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/29 ,  H01L24/82 ,  H01L24/83 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/2402 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/2919 ,  H01L2224/82039 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06589 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1064 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  Y10T29/49144

摘要： Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate molding material is added within the mold form, and the substrate molding material is then hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and the faces of the chips. A thermal plug may be affixed to the backside of a chip before substrate molding material is added. A connector frame may be placed on the adhesive layer before substrate molding material is added. A dielectric layer may be placed over the backsides of the chips before the substrate molding material is added to enhance repairability. A portion of the chips and substrate molding material may be removed after the substrate molding material is hardened.

摘要翻译： 基板材料直接模制到半导体芯片和其他用于集成电路模块制造的电气部件。 具有接触垫的芯片面朝下放置在由基底支撑的粘合剂层上。 模具周围位于芯片周围。 在模具形式中加入基材成型材料，然后将基材成型材料硬化。 具有与预定接触焊盘对准的通孔并具有延伸通过通孔的电导体的通孔的电介质层位于硬化的基底成型材料和芯片的表面上。 在添加基板模制材料之前，可以将热塞固定到芯片的背面。 在添加基材模塑材料之前，连接器框架可以放置在粘合剂层上。 在添加基底成型材料之前，可以将电介质层放置在芯片的背面上以增强可修复性。 芯片和基材成型材料的一部分可以在基材模塑材料硬化之后被去除。

公开(公告)号：US5157589A

公开(公告)日：1992-10-20

申请号：US546963

申请日：1990-07-02

申请人： Herbert S. Cole, Jr. ,  James W. Rose ,  Charles W. Eichelberger ,  Robert J. Wojnarowski

发明人： Herbert S. Cole, Jr. ,  James W. Rose ,  Charles W. Eichelberger ,  Robert J. Wojnarowski

IPC分类号： H01L23/13 ,  H01L23/498 ,  H01L23/538 ,  H01L25/04 ,  H01L25/18 ,  H05K1/18 ,  H05K3/38 ,  H05K3/46

CPC分类号： H01L23/5389 ,  H01L23/13 ,  H01L23/49822 ,  H01L24/24 ,  H01L24/82 ,  H05K3/4635 ,  H05K3/4673 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15787 ,  H05K1/185 ,  H05K2201/0129 ,  H05K2201/0154 ,  H05K2201/0195 ,  H05K3/386 ,  H05K3/4644

摘要： A high density interconnect structure incorporating a plurality of laminated dieletric layers is fabricated using thermoplastic adhesive layers of progressively lower glass transition temperature in order to maintain the stability of the already fabricated structure during the addition of the later laminations. This structure also facilitates the removal of only a portion of the high density interconnect structure where a fault in the system can be corrected in one of the upper layers of the high density interconnect structure.

公开(公告)号：US5562838A

公开(公告)日：1996-10-08

申请号：US037833

申请日：1993-03-29

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  John L. Henkes

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  John L. Henkes

IPC分类号： B29D11/00 ,  G02B6/12 ,  G02B6/122 ,  G02B6/13 ,  G02B6/36 ,  G02B6/42 ,  G02B6/43 ,  G02B6/00

CPC分类号： B29D11/00701 ,  G02B6/1221 ,  G02B6/13 ,  G02B6/421 ,  G02B6/43 ,  G02B2006/12173 ,  G02B2006/12176

摘要： HDI fabrication techniques are employed to form a variety of optical waveguide structures in polymer materials. Adaptive optical connections are formed, taking into account the actual position and orientation of devices which may deviate from the ideal. Structures include solid light-conducting structures, hollow light-conducting structures which are also suitable for conducting cooling fluid, and optical switching devices employing liquid crystal material. A "shrink back" method may be used to form a tunnel in polymer material which is then filled with an uncured polymer material that shrinks upon curing.

公开(公告)号：US5554305A

公开(公告)日：1996-09-10

申请号：US411178

申请日：1995-03-27

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

IPC分类号： B32B7/02 ,  B32B18/00 ,  H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H01L23/538 ,  H05K1/02 ,  H05K1/03 ,  H05K3/00 ,  H05K3/38 ,  H01L21/3105

CPC分类号： H05K1/0313 ,  H01L21/481 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H05K1/024 ,  H05K1/0373 ,  H05K3/0032 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3011 ,  H05K2201/0116 ,  H05K2201/015 ,  H05K2201/0158 ,  H05K2203/083 ,  H05K2203/122 ,  H05K3/386 ,  Y10S521/918 ,  Y10T29/49124 ,  Y10T29/49155

摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

公开(公告)号：US5449427A

公开(公告)日：1995-09-12

申请号：US247820

申请日：1994-05-23

申请人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

发明人： Robert J. Wojnarowski ,  Herbert S. Cole ,  Theresa A. Sitnik-Nieters ,  Wolfgang Daum

IPC分类号： B32B7/02 ,  B32B18/00 ,  H01L21/48 ,  H01L21/60 ,  H01L23/498 ,  H01L23/538 ,  H05K1/02 ,  H05K1/03 ,  H05K3/00 ,  H05K3/38 ,  B32B31/12 ,  B32B31/14

CPC分类号： H05K1/0313 ,  H01L21/481 ,  H01L23/49894 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H05K1/024 ,  H05K1/0373 ,  H05K3/0032 ,  H01L2224/2402 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01052 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/3011 ,  H05K2201/0116 ,  H05K2201/015 ,  H05K2201/0158 ,  H05K2203/083 ,  H05K2203/122 ,  H05K3/386 ,  Y10S521/918 ,  Y10T29/49124 ,  Y10T29/49155

摘要： A method for processing a low dielectric constant material includes dispersing an additive material in a porous low dielectric constant layer, fabricating a desired electronic structure, and then removing the additive material from the pores of the low dielectric constant layer. The removal of the additive material from the pores can be accomplished by sublimation, evaporation, and diffusion. Applications for the low dielectric constant layer include the use as an overlay layer for interconnecting a circuit chip supported by a substrate and the use as printed circuit board material.

摘要翻译： 用于处理低介电常数材料的方法包括将添加剂材料分散在多孔低介电常数层中，制造所需的电子结构，然后从低介电常数层的孔中除去添加剂材料。 从孔中去除添加剂材料可以通过升华，蒸发和扩散来实现。 用于低介电常数层的应用包括用作互连由衬底支撑的电路芯片和用作印刷电路板材料的覆盖层的用途。

公开(公告)号：US5169678A

公开(公告)日：1992-12-08

申请号：US456421

申请日：1989-12-26

申请人： Herbert S. Cole ,  Robert J. Wojnarowski

发明人： Herbert S. Cole ,  Robert J. Wojnarowski

IPC分类号： C08K5/00 ,  B23K26/00 ,  B23K26/18 ,  B23K26/40 ,  C08J7/00 ,  C08J7/04 ,  C08K5/22 ,  C08L101/00 ,  C09D201/00 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  H01L21/311 ,  H01L23/12 ,  H01L23/538 ,  H01L25/04 ,  H01L25/18

CPC分类号： G03F7/039 ,  G03F7/2053 ,  H01L21/31127 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/82 ,  H01L2224/24227 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/12042 ,  H01L2924/14 ,  Y10S430/146

摘要： The ultraviolet absorption characteristics of a polymer material are modified by the addition of an ultraviolet absorbing dye to render it laser ablatable at a frequency at which the unmodified material is substantially non-laser ablatable.