公开(公告)号：US20090115070A1

公开(公告)日：2009-05-07

申请号：US12258131

申请日：2008-10-24

申请人： Junji TANAKA ,  Masahiko Harayama ,  Masanori Onodera

发明人： Junji TANAKA ,  Masahiko Harayama ,  Masanori Onodera

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L23/49575 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/0657 ,  H01L2221/68372 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/16145 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/731 ,  H01L2224/73215 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor chip 10, a connector terminal 30 electrically coupled with the semiconductor chip 10, a resin section 40 for molding the semiconductor chip 10 and the connector terminal 30 such that a lower surface of the semiconductor chip 10 opposite a surface on which a circuit 12 is formed is exposed, and a first chip 20 formed on the semiconductor chip 10 having an upper surface exposed from the resin section and a thermal expansion coefficient smaller than that of the resin section.

摘要翻译： 半导体器件包括半导体芯片10，与半导体芯片10电耦合的连接器端子30，用于模制半导体芯片10的树脂部分40和连接器端子30，使得半导体芯片10的下表面与表面上的表面相对 露出电路12，形成在半导体芯片10上的第一芯片20具有从树脂部露出的上表面，其热膨胀系数小于树脂部的热膨胀系数。

公开(公告)号：US07846829B2

公开(公告)日：2010-12-07

申请号：US12196210

申请日：2008-08-21

申请人： Junji Tanaka ,  Masahiko Harayama ,  Masanori Onodera

发明人： Junji Tanaka ,  Masahiko Harayama ,  Masanori Onodera

IPC分类号： H01L21/44 ,  H01L23/52 ,  H01L23/48 ,  H01L29/40 ,  H01L23/485 ,  H01L23/498

CPC分类号： H05K3/38 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/85201 ,  H01L2225/06568 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/20752 ,  H05K2201/094 ,  H05K2201/09472 ,  H05K2201/1025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device is provided that includes a semiconductor chip, a plurality of solder bumps that electrically couple the semiconductor chip to the outside, and a metal bump being provided on the surface of each first solder bump which is at least a part of the plurality of solder bumps and being made of a metal having a melting point higher than that of the first solder bump. The wettability of the first solder bump is improved as each metal bump serves as a core when the corresponding first solder bump melts. Thus, the connection reliability of the first solder bump can be improved.

摘要翻译： 提供了一种半导体器件，其包括半导体芯片，将半导体芯片电耦合到外部的多个焊料凸块以及设置在每个第一焊料凸块的表面上的金属凸块，该第一焊料凸块是至少部分多个 焊料凸起并且由熔点高于第一焊料凸点的金属制成。 当相应的第一焊料凸块熔化时，每个金属凸块用作芯时，第一焊料凸块的润湿性得到改善。 因此，可以提高第一焊料凸块的连接可靠性。

公开(公告)号：US09418940B2

公开(公告)日：2016-08-16

申请号：US12110181

申请日：2008-04-25

申请人： Masataka Hoshino ,  Masahiko Harayama ,  Koji Taya ,  Naomi Masuda ,  Masanori Onodera ,  Ryota Fukuyama

发明人： Masataka Hoshino ,  Masahiko Harayama ,  Koji Taya ,  Naomi Masuda ,  Masanori Onodera ,  Ryota Fukuyama

IPC分类号： H01L23/02 ,  H01L23/538 ,  H01L25/10 ,  H01L25/00 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/5389 ,  H01L23/3128 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Methods and structures for stack type semiconductor packaging are disclosed. In one embodiment, a semiconductor device includes a semiconductor chip mounted onto a substrate, a first resin molding portion formed on the substrate for sealing the semiconductor chip, and a through metal mounted on the substrate so as to pierce the first resin molding portion around the semiconductor chip. The semiconductor device further comprises an upper metal electrically coupled with the through metal and mounted on the first resin molding portion to extend from the through metal toward the semiconductor chip along an upper surface of the first resin molding portion, where the through metal and the upper metal are formed into an integral structure.

摘要翻译： 公开了堆叠型半导体封装的方法和结构。 在一个实施例中，半导体器件包括安装在基板上的半导体芯片，形成在用于密封半导体芯片的基板上的第一树脂模塑部分和安装在基板上的贯穿金属，以便穿过第一树脂模制部分 半导体芯片 所述半导体器件还包括与所述贯通金属电耦合并且安装在所述第一树脂模制部分上的上金属，以沿着所述第一树脂模塑部分的上表面从所述贯穿金属向所述半导体芯片延伸，其中所述通孔金属和所述上部 金属形成为一体结构。

公开(公告)号：US08097961B2

公开(公告)日：2012-01-17

申请号：US12341863

申请日：2008-12-22

申请人： Junji Tanaka ,  Koji Taya ,  Masahiko Harayama

发明人： Junji Tanaka ,  Koji Taya ,  Masahiko Harayama

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L2224/24145 ,  H01L2224/48091 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/00014

摘要： Embodiments of the present invention are directed to provide a semiconductor device including a semiconductor chip formed of a conductive material, a connector terminal around the semiconductor chip, which is formed of a same material for forming the semiconductor chip, an insulating member for electrically insulating the semiconductor chip from the connector terminal, and a first connection member for electrically coupling the semiconductor chip with the connector terminal. Simplified step of manufacturing the connector terminal may further simplify the steps of manufacturing the semiconductor device.

摘要翻译： 本发明的实施例是提供一种半导体器件，其包括由导电材料形成的半导体芯片，半导体芯片周围的连接器端子，其由用于形成半导体芯片的相同材料形成;绝缘构件， 半导体芯片，以及用于将半导体芯片与连接器端子电耦合的第一连接构件。 制造连接器端子的简化步骤可以进一步简化制造半导体器件的步骤。

公开(公告)号：US08361857B2

公开(公告)日：2013-01-29

申请号：US13323370

申请日：2011-12-12

申请人： Junji Tanaka ,  Koji Taya ,  Masahiko Harayama

发明人： Junji Tanaka ,  Koji Taya ,  Masahiko Harayama

IPC分类号： H01L21/8238

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L2224/24145 ,  H01L2224/48091 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06551 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/00014

摘要： Embodiments of the present invention are directed to provide a semiconductor device including a semiconductor chip formed of a conductive material, a connector terminal around the semiconductor chip, which is formed of a same material for forming the semiconductor chip, an insulating member for electrically insulating the semiconductor chip from the connector terminal, and a first connection member for electrically coupling the semiconductor chip with the connector terminal. Simplified step of manufacturing the connector terminal may further simplify the steps of manufacturing the semiconductor device.

摘要翻译： 本发明的实施例是提供一种半导体器件，其包括由导电材料形成的半导体芯片，半导体芯片周围的连接器端子，其由用于形成半导体芯片的相同材料形成;绝缘构件， 半导体芯片，以及用于将半导体芯片与连接器端子电耦合的第一连接构件。 制造连接器端子的简化步骤可以进一步简化制造半导体器件的步骤。

公开(公告)号：US08481366B2

公开(公告)日：2013-07-09

申请号：US13094668

申请日：2011-04-26

申请人： Masahiko Harayama ,  Kouichi Meguro ,  Junichi Kasai

发明人： Masahiko Harayama ,  Kouichi Meguro ,  Junichi Kasai

IPC分类号： H01L21/00

CPC分类号： G06F21/34 ,  H01L21/4842 ,  H01L21/566 ,  H01L23/3121 ,  H01L23/49551 ,  H01L23/49811 ,  H01L24/73 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/85

摘要： A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.

摘要翻译： 提供了一种半导体器件，其包括半导体芯片和模制半导体芯片并具有第一通孔的树脂部分。 电耦合到半导体芯片的通孔延伸穿过树脂部分，并且在第一通孔的内表面的顶边缘和底边之间延伸。 在第一通孔的内部形成有在与树脂部的上表面和下表面对应的面之间延伸的空腔。

公开(公告)号：US08039943B2

公开(公告)日：2011-10-18

申请号：US12239566

申请日：2008-09-26

申请人： Masahiko Harayama ,  Kouichi Meguro ,  Junichi Kasai

发明人： Masahiko Harayama ,  Kouichi Meguro ,  Junichi Kasai

IPC分类号： H01L23/48

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L21/566 ,  H01L23/5389 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1029 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.

摘要翻译： 提供一种半导体器件，其包括半导体芯片和模制半导体芯片并具有第一通孔的树脂部分。 电耦合到半导体芯片的通孔延伸穿过树脂部分，并且在第一通孔的内表面的顶边缘和底边之间延伸。 在第一通孔的内部形成有在与树脂部的上表面和下表面对应的面之间延伸的空腔。

公开(公告)号：US06316838B1

公开(公告)日：2001-11-13

申请号：US09531231

申请日：2000-03-20

申请人： Kaname Ozawa ,  Hayato Okuda ,  Tetsuya Hiraoka ,  Mitsutaka Sato ,  Yuji Akashi ,  Akira Okada ,  Masahiko Harayama

发明人： Kaname Ozawa ,  Hayato Okuda ,  Tetsuya Hiraoka ,  Mitsutaka Sato ,  Yuji Akashi ,  Akira Okada ,  Masahiko Harayama

IPC分类号： H01L2348

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48479 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/4903 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/49429 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85951 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10161 ,  H01L2924/15183 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2224/48471 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/2075 ,  H01L2924/20754 ,  H01L2224/05599 ,  H01L2224/4554

摘要： A semiconductor device includes a substrate provided with a plurality of leads, a face-down semiconductor element provided on one surface of the substrate, a first stacked semiconductor element and a second stacked semiconductor element provided on another surface of the substrate and connected to the substrate by wires, and an extended wiring mechanism for connecting electrodes of the face-down semiconductor element and electrodes of the first and second semiconductor elements. The connected electrodes are equi-electrodes whose electrical characteristics are equal.

摘要翻译： 半导体器件包括设置有多个引线的衬底，设置在衬底的一个表面上的面向下半导体元件，设置在衬底的另一个表面上并连接到衬底的第一堆叠半导体元件和第二堆叠半导体元件 以及用于连接面朝下半导体元件的电极和第一和第二半导体元件的电极的延长布线机构。 连接的电极是电特性相等的等电极。