摘要:
A superconducting tunable filter comprises a dielectric base plate; a patch-shaped resonator pattern formed of a superconducting material on the dielectric base plate; a top dielectric locally placed on the superconducting resonator pattern at a prescribed position and made of a material with an electric-field dependent permittivity; a conducting pattern formed on a top face of the top dielectric; and a bias voltage supply configured to apply a bias voltage between the conducting pattern and the superconducting resonator pattern.
摘要:
A thermoelectric conversion module includes an insulative substrate, a plurality of thermoelectric conversion material films disposed with a gap therebetween on a first surface of the insulative substrate and made of any one of an n-type thermoelectric conversion material and a p-type thermoelectric conversion material, a first electrode and a second electrode, formed away from each other on each of the thermoelectric conversion material films, a first thermal conduction member disposed on a side of the first surface of the insulative substrate and including a protruding portion in contact with the first, electrodes or the insulative substrate between the first electrodes, and a second thermal conduction member disposed on a side of a second surface of the insulative substrate and including a protruding portion in contact with the second surface of the insulative substrate at an area coinciding with the second electrodes.
摘要:
A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.
摘要:
A variable capacitor includes a metal oxide film having a perovskite structure, first and second electrode films having the metal oxide film placed therebetween and to be coupled to an external voltage source, and a bias voltage source configured to provide a bias voltage that is applied in series or parallel to a capacitance of a capacitor including the metal oxide film and the first and second electrode films, wherein the bias voltage applied by the bias voltage source to the capacitance is adapted to maximize a voltage dependency of a relative permittivity of the metal oxide film.
摘要:
A superconducting tunable filter comprises a dielectric base plate; a patch-shaped resonator pattern formed of a superconducting material on the dielectric base plate; a top dielectric locally placed on the superconducting resonator pattern at a prescribed position and made of a material with an electric-field dependent permittivity; a conducting pattern formed on a top face of the top dielectric; and a bias voltage supply configured to apply a bias voltage between the conducting pattern and the superconducting resonator pattern.
摘要:
A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.
摘要:
A variable capacitor includes a metal oxide film having a perovskite structure, first and second electrode films having the metal oxide film placed therebetween and to be coupled to an external voltage source, and a bias voltage source configured to provide a bias voltage that is applied in series or parallel to a capacitance of a capacitor including the metal oxide film and the first and second electrode films, wherein the bias voltage applied by the bias voltage source to the capacitance is adapted to maximize a voltage dependency of a relative permittivity of the metal oxide film.
摘要:
The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14, a capacitor dielectric film 16 formed over the first capacitor electrode 14, and a second capacitor electrode 18 formed over the capacitor dielectric film 16; leading-out electrodes 26a, 26b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34a, 34b for connecting to outside and connected to the leading-out electrodes 26a, 26b.
摘要:
In one aspect of the invention, in a thin layer capacitor element comprising a capacitor having a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.
摘要:
The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10, as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.