公开(公告)号：US20160225658A1

公开(公告)日：2016-08-04

申请号：US15093408

申请日：2016-04-07

申请人： Kyu-Hee Han ,  Sanghoon Ahn

发明人： Kyu-Hee Han ,  Sanghoon Ahn

IPC分类号： H01L21/768 ,  H01L21/3105 ,  H01L23/528 ,  H01L21/311

CPC分类号： H01L21/7682 ,  H01L21/31058 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes spaced apart conductive patterns on a substrate surface, and a supporting pattern on the substrate surface between adjacent ones of the conductive patterns and separated therefrom by respective gap regions. The adjacent ones of the conductive patterns extend away from the substrate surface beyond a surface of the supporting pattern therebetween. A capping layer is provided on respective surfaces of the conductive patterns and the surface of the supporting pattern. Related fabrication methods are also discussed.

摘要翻译： 集成电路器件在衬底表面上包括间隔开的导电图案，以及在相邻的导电图案之间的衬底表面上的支撑图案，并且由相应的间隙区域分离。 相邻的导电图案远离基板表面延伸超过其间的支撑图案的表面。 在导电图案和支撑图案的表面的相应表面上设置覆盖层。 还讨论了相关的制造方法。

公开(公告)号：US09337150B2

公开(公告)日：2016-05-10

申请号：US14015388

申请日：2013-08-30

申请人： Kyu-Hee Han ,  Sanghoon Ahn

发明人： Kyu-Hee Han ,  Sanghoon Ahn

IPC分类号： H01L23/48 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/31058 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes spaced apart conductive patterns on a substrate surface, and a supporting pattern on the substrate surface between adjacent ones of the conductive patterns and separated therefrom by respective gap regions. The adjacent ones of the conductive patterns extend away from the substrate surface beyond a surface of the supporting pattern therebetween. A capping layer is provided on respective surfaces of the conductive patterns and the surface of the supporting pattern. Related fabrication methods are also discussed.

摘要翻译： 集成电路器件在衬底表面上包括间隔开的导电图案，以及在相邻的导电图案之间的衬底表面上的支撑图案，并且由相应的间隙区域分离。 相邻的导电图案远离基板表面延伸超过其间的支撑图案的表面。 在导电图案和支撑图案的表面的相应表面上设置覆盖层。 还讨论了相关的制造方法。

公开(公告)号：US09741608B2

公开(公告)日：2017-08-22

申请号：US15093408

申请日：2016-04-07

申请人： Kyu-Hee Han ,  Sanghoon Ahn

发明人： Kyu-Hee Han ,  Sanghoon Ahn

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522 ,  H01L21/3105 ,  H01L21/311 ,  H01L23/528

CPC分类号： H01L21/7682 ,  H01L21/31058 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes spaced apart conductive patterns on a substrate surface, and a supporting pattern on the substrate surface between adjacent ones of the conductive patterns and separated therefrom by respective gap regions. The adjacent ones of the conductive patterns extend away from the substrate surface beyond a surface of the supporting pattern therebetween. A capping layer is provided on respective surfaces of the conductive patterns and the surface of the supporting pattern. Related fabrication methods are also discussed.

公开(公告)号：US20140061926A1

公开(公告)日：2014-03-06

申请号：US14015388

申请日：2013-08-30

申请人： Kyu-Hee Han ,  Sanghoon Ahn

发明人： Kyu-Hee Han ,  Sanghoon Ahn

IPC分类号： H01L23/532

CPC分类号： H01L21/7682 ,  H01L21/31058 ,  H01L21/31111 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76849 ,  H01L21/76877 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit device includes spaced apart conductive patterns on a substrate surface, and a supporting pattern on the substrate surface between adjacent ones of the conductive patterns and separated therefrom by respective gap regions. The adjacent ones of the conductive patterns extend away from the substrate surface beyond a surface of the supporting pattern therebetween. A capping layer is provided on respective surfaces of the conductive patterns and the surface of the supporting pattern. Related fabrication methods are also discussed.

摘要翻译： 集成电路器件在衬底表面上包括间隔开的导电图案，以及在相邻的导电图案之间的衬底表面上的支撑图案，并且由相应的间隙区域分离。 相邻的导电图案远离基板表面延伸超过其间的支撑图案的表面。 在导电图案和支撑图案的表面的相应表面上设置覆盖层。 还讨论了相关的制造方法。

公开(公告)号：US08786058B2

公开(公告)日：2014-07-22

申请号：US13289576

申请日：2011-11-04

申请人： Kyu-Hee Han ,  Byung-Lyul Park ,  Byunghee Kim ,  Sanghoon Ahn ,  Sangdon Nam ,  Kyoung-Hee Kim

发明人： Kyu-Hee Han ,  Byung-Lyul Park ,  Byunghee Kim ,  Sanghoon Ahn ,  Sangdon Nam ,  Kyoung-Hee Kim

IPC分类号： H01L29/06

CPC分类号： H01L21/76898 ,  H01L21/76802 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/06182 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/17181 ,  H01L2224/48227 ,  H01L2224/73257 ,  H01L2224/81815 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided. The semiconductor device includes a substrate having a via hole comprised of a first region having a first width and a second region having a second width greater than the first width, wherein at least a portion of the substrate is exposed in the via hole, and an insulating region having an air gap spaced apart from and surrounding the first region of the via hole.

摘要翻译： 提供半导体器件。 半导体器件包括具有通孔的衬底，该通孔由具有第一宽度的第一区域和具有大于第一宽度的第二宽度的第二区域组成，其中衬底的至少一部分暴露在通孔中， 绝缘区域具有与通孔的第一区域间隔开并围绕通孔的第一区域的气隙。

公开(公告)号：US08524615B2

公开(公告)日：2013-09-03

申请号：US13238297

申请日：2011-09-21

申请人： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

发明人： Sang-Hoon Ahn ,  Byung-Hee Kim ,  Sang-Don Nam ,  Kyu-Hee Han ,  Gil-heyun Choi ,  Jang-Hee Lee ,  Jong-Min Baek ,  Kyoung-Hee Kim

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/44

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/76829 ,  H01L2221/1047

摘要： Example embodiments relate to a method of forming a hardened porous dielectric layer. The method may include forming a dielectric layer containing porogens on a substrate, transforming the dielectric layer into a porous dielectric layer using a first UV curing process to remove the porogens from the dielectric layer, and transforming the porous dielectric layer into a crosslinked porous dielectric layer using a second UV curing process to generate crosslinks in the porous dielectric layer.

摘要翻译： 示例性实施方案涉及形成硬化多孔介电层的方法。 该方法可以包括在衬底上形成含有致孔剂的电介质层，使用第一UV固化工艺将电介质层转化为多孔介电层，以从电介质层除去致孔剂，并将多孔电介质层转化成交联的多孔介电层 使用第二UV固化方法在多孔介电层中产生交联。

公开(公告)号：US10041172B2

公开(公告)日：2018-08-07

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/44 ,  C23C16/455

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

公开(公告)号：US09224593B2

公开(公告)日：2015-12-29

申请号：US13242031

申请日：2011-09-23

申请人： Sang-Hoon Ahn ,  Kyu-Hee Han ,  Kyoung-Hee Kim ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Sang-Don Nam

发明人： Sang-Hoon Ahn ,  Kyu-Hee Han ,  Kyoung-Hee Kim ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Sang-Don Nam

IPC分类号： H01L21/768 ,  H01L21/312 ,  C25D1/08 ,  H01L21/02 ,  C23C16/40 ,  C23C16/56

CPC分类号： H01L21/02203 ,  C23C16/401 ,  C23C16/56 ,  C25D1/08 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/7682 ,  H01L2221/1047

摘要： The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.

摘要翻译： 本发明构思提供了多孔，低k电介质材料及其制造和使用方法。 在一些实施方案中，通过在基材上形成含致孔剂的介电层，然后从该层除去至少一部分所述致孔剂来制造多孔低k电介质材料。

公开(公告)号：US20120178253A1

公开(公告)日：2012-07-12

申请号：US13242031

申请日：2011-09-23

申请人： Sang-Hoon Ahn ,  Kyu-Hee Han ,  Kyoung-Hee Kim ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Sang-Don Nam

发明人： Sang-Hoon Ahn ,  Kyu-Hee Han ,  Kyoung-Hee Kim ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Sang-Don Nam

IPC分类号： H01L21/768 ,  H01L21/31

CPC分类号： H01L21/02203 ,  C23C16/401 ,  C23C16/56 ,  C25D1/08 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/76802 ,  H01L21/7682 ,  H01L2221/1047

摘要： The inventive concept provides porous, low-k dielectric materials and methods of manufacturing and using the same. In some embodiments, porous, low-k dielectric materials are manufactured by forming a porogen-containing dielectric layer on a substrate and then removing at least a portion of said porogen from the layer.

摘要翻译： 本发明构思提供了多孔，低k电介质材料及其制造和使用方法。 在一些实施方案中，通过在基材上形成含致孔剂的介电层，然后从该层除去至少一部分所述致孔剂来制造多孔低k电介质材料。

公开(公告)号：US20160060759A1

公开(公告)日：2016-03-03

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/455

CPC分类号： C23C16/45574 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

摘要翻译： 一种气体注入装置，其可以在容器中顺序地供给具有彼此反应的至少两种源气体的基板和包括该气体注入装置的薄膜沉积设备。 气体注入装置包括基板，从基板突出的第一气体供应区域，从基板突出并邻近第一气体供应区域的第二气体供应区域和由第一气体供应源的侧壁限定的沟槽 区域和第二气体供应区域的侧壁。 第一气体供给区域的侧壁和第二气体供给区域的侧壁彼此面对并且在基板上沿径向方向延伸。