公开(公告)号：US20130020715A1

公开(公告)日：2013-01-24

申请号：US13628899

申请日：2012-09-27

Applicant: Renesas Electronics Corporation

Inventor： Yukihiro SATOU ,  Toshiyuki Hata

IPC: H01L23/48

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US20190027427A1

公开(公告)日：2019-01-24

申请号：US16140791

申请日：2018-09-25

Applicant: RENESAS ELECTRONICS CORPORATION ,  RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.

Inventor： Hajime HASEBE ,  Tadatoshi DANNO ,  Yukihiro SATOU

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/49 ,  H01L23/00

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

公开(公告)号：US20170033033A1

公开(公告)日：2017-02-02

申请号：US15293584

申请日：2016-10-14

Applicant: RENESAS ELECTRONICS CORPORATION ,  RENESAS SEMICONDUCTOR PACKAGE & TEST SOLUTIONS CO., LTD.

Inventor： Hajime HASEBE ,  Tadatoshi DANNO ,  Yukihiro SATOU

IPC: H01L23/495 ,  H01L21/56 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/49503 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49 ,  H01L23/4952 ,  H01L23/49548 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29339 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/484 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2224/85439 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49121 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract translation: 在非引线型半导体器件中，突片，突片悬挂引线和其它引线暴露于密封构件的一个表面。 半导体元件被定位在密封构件内并用粘合剂固定到突片的表面。 突片形成为比半导体元件大，使得突片的外周边缘位于半导体元件的外周边缘的外侧。 在位于半导体元件固定的区域与电线连接的电线连接区域之间的突片表面部分中形成有沟槽，该沟槽形成为围绕半导体元件固定区域，从而防止剥离 在半导体元件固定的突片与构成封装的树脂之间。

公开(公告)号：US20140332866A1

公开(公告)日：2014-11-13

申请号：US14331289

申请日：2014-07-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATOU ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L23/495 ,  H01L23/31

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract translation: 一种半导体器件，包括：头部，固定到构成MOSFET的头部的半导体芯片;以及覆盖半导体芯片，插头等的绝缘树脂的密封体，还包括与插头连接地形成的漏极引线 从密封体的一个侧面，以及从密封体的一个侧面平行突出的源极引线和栅极引线，以及位于密封体的内部的电线， 半导体芯片和源极引线以及栅极引线，栅极电极焊盘布置在比栅极引线和源极引线更远离源极电极焊盘的位置。

公开(公告)号：US20140312510A1

公开(公告)日：2014-10-23

申请号：US14322320

申请日：2014-07-02

Applicant: Renesas Electronics Corporation

Inventor： Yukihiro SATOU ,  Tomoaki UNO ,  Nobuyoshi MATSUURA ,  Masaki SHIRAISHI

IPC: H01L23/538

CPC classification number: H01L23/5386 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/165 ,  H01L29/4175 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  H05K7/02 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract translation: 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS•FET和低边开关的功率MOS•FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

公开(公告)号：US20130203217A1

公开(公告)日：2013-08-08

申请号：US13717464

申请日：2012-12-17

Applicant: Renesas Electronics Corporation

Inventor： Yukihiro SATOU ,  Tomoaki UNO ,  Nobuyoshi MATSUURA ,  Masaki SHIRAISHI

IPC: H01L23/00

CPC classification number: H01L23/5386 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/165 ,  H01L29/4175 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  H05K7/02 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract translation: 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS.FET和用于低侧开关的功率MOS.FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

公开(公告)号：US20180090463A1

公开(公告)日：2018-03-29

申请号：US15816568

申请日：2017-11-17

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATOU ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L29/78 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/206

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US20150380378A1

公开(公告)日：2015-12-31

申请号：US14845357

申请日：2015-09-04

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yukihiro SATOU ,  Toshiyuki HATA

IPC: H01L23/00 ,  H01L29/78 ,  H01L23/31

CPC classification number: H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

Abstract translation: 一种半导体器件，包括：头部，固定到构成MOSFET的头部的半导体芯片;以及覆盖半导体芯片，插头等的绝缘树脂的密封体，还包括与插头连接地形成的漏极引线 从密封体的一个侧面，以及从密封体的一个侧面平行突出的源极引线和栅极引线，以及位于密封体的内部的电线， 半导体芯片和源极引线以及栅极引线，栅极电极焊盘布置在比栅极引线和源极引线更远离源极电极焊盘的位置。

公开(公告)号：US20140084440A1

公开(公告)日：2014-03-27

申请号：US14090295

申请日：2013-11-26

Applicant: HITACHI HOKKAI SEMICONDUCTOR LTD. ,  RENESAS ELECTRONICS CORPORATION

Inventor： Hajime HASEBE ,  Tadatoshi DANNO ,  Yukihiro SATOU

IPC: H01L23/49

CPC classification number: H01L23/49503 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/3121 ,  H01L23/49 ,  H01L23/4952 ,  H01L23/49548 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/26175 ,  H01L2224/27013 ,  H01L2224/29339 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/484 ,  H01L2224/48463 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2224/85439 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  Y10T29/49121 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract translation: 在非引线型半导体器件中，突片，突片悬挂引线和其它引线暴露于密封构件的一个表面。 半导体元件被定位在密封构件内并用粘合剂固定到突片的表面。 突片形成为比半导体元件大，使得突片的外周边缘位于半导体元件的外周边缘的外侧。 在位于半导体元件固定的区域与电线连接的电线连接区域之间的突片表面部分中形成有沟槽，该沟槽形成为围绕半导体元件固定区域，从而防止剥离 在半导体元件固定的突片与构成封装的树脂之间。

公开(公告)号：US20140003002A1

公开(公告)日：2014-01-02

申请号：US14014286

申请日：2013-08-29

Applicant: Renesas Electronics Corporation

Inventor： Yukihiro SATOU ,  Tomoaki UNO ,  Nobuyoshi MATSUURA ,  Masaki SHIRAISHI

IPC: H05K7/02

CPC classification number: H01L23/5386 ,  H01L23/49575 ,  H01L23/50 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/165 ,  H01L29/4175 ,  H01L2224/05554 ,  H01L2224/0603 ,  H01L2224/29339 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4943 ,  H01L2224/83855 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H02M3/1588 ,  H05K7/02 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/2075 ,  H01L2924/20754

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract translation: 本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOS.FET和用于低侧开关的功率MOS.FET串联连接。 在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。 三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。