摘要:
In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer and a substrate folded around the interposer. Other embodiments are described and claimed.
摘要:
In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer and a substrate folded around the interposer. Other embodiments are described and claimed.
摘要:
A device includes a folded flex substrate. A memory die is connected to a first side of the folded flex substrate. A logic die is connected to a second side of the folded flex substrate. A trace routing pattern of source voltage signals is identical to a trace routing pattern of collector voltage signals.
摘要:
An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect. The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.
摘要:
A microelectronic package comprises a die (110) having a front side (111) containing active circuitry (115) and a back side (112) opposite the front side and a film (120) on the back side of the die. The film has a thickness (121) of at least 20 micrometers, a Young's modulus of at least 10 GPa, and a post-cure glass transition temperature of at least 100° Celsius.
摘要:
A microelectronic package includes a substrate (110, 210), an interposer (120, 220) having a first surface (121) and an opposing second surface (122), a microelectronic die (130, 230) attached to the substrate, and a mold compound (140) over the substrate. The interposer is electrically connected to the substrate using a wirebond (150). The first surface of the interposer is physically connected to the substrate with an adhesive (160), and the second surface has an electrically conductive contact (126) formed therein. The mold compound completely encapsulates the wirebond and partially encapsulates the interposer such that the electrically conductive contact in the second surface of the interposer remains uncovered by the mold compound.
摘要:
An offset interposer includes a land side including land-side ball-grid array (BGA) and a package-on-package (POP) side including a POP-side BGA. The land-side BGA includes two adjacent, spaced-apart land-side pads, and the POP-side BGA includes two adjacent, spaced-apart POP-side pads that are coupled to the respective two land-side BGA pads through the offset interposer. The land-side BGA is configured to interface with a first-level interconnect The POP-side BGA is configured to interface with a POP substrate. Each of the two land-side pads has a different footprint than the respective two POP-side pads.
摘要:
A microelectronic package includes a substrate (110, 210), an interposer (120, 220) having a first surface (121) and an opposing second surface (122), a microelectronic die (130, 230) attached to the substrate, and a mold compound (140) over the substrate. The interposer is electrically connected to the substrate using a wirebond (150). The first surface of the interposer is physically connected to the substrate with an adhesive (160), and the second surface has an electrically conductive contact (126) formed therein. The mold compound completely encapsulates the wirebond and partially encapsulates the interposer such that the electrically conductive contact in the second surface of the interposer remains uncovered by the mold compound.
摘要:
A molding compound for use in an integrated circuit package comprises an epoxy and a thermally conductive filler material. The thermally conductive filler material comprises between 70% and 95% of the molding compound and has a thermal conductivity between 10 W/m-K and 3000 W/m-K.
摘要:
Embodiments of the present disclosure are directed towards techniques and configurations of interconnect structures having a polymer core in integrated circuit (IC) package assemblies. In one embodiment, an apparatus includes a first die having a plurality of transistor devices disposed on an active side of the first die and a plurality of interconnect structures electrically coupled with the first die, wherein individual interconnect structures of the plurality of interconnect structures have a polymer core, and an electrically conductive material disposed on the polymer core, the electrically conductive material being configured to route electrical signals between the transistor devices of the first die and a second die. Other embodiments may be described and/or claimed.