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    Cerium oxide ultrafine particles and method for preparing the same
    2.
    发明授权
    Cerium oxide ultrafine particles and method for preparing the same 失效
    氧化铈超细颗粒及其制备方法

    公开(公告)号：US5938837A

    公开(公告)日：1999-08-17

    申请号：US719618

    申请日：1996-09-25

    申请人： Kenzo Hanawa ,  Naoyoshi Mochizuki ,  Naruo Ueda

    发明人： Kenzo Hanawa ,  Naoyoshi Mochizuki ,  Naruo Ueda

    IPC分类号： C30B7/14 ,  B24C11/00 ,  C01F17/00 ,  C09K3/14 ,  C30B7/00 ,  C30B29/16

    CPC分类号： B82Y30/00 ,  C01F17/0043 ,  C09K3/1409 ,  C30B29/16 ,  C30B29/605 ,  C30B7/00 ,  C01P2002/01 ,  C01P2002/72 ,  C01P2004/50 ,  C01P2004/64

    摘要： Cerium oxide ultrafine particles consist essentially of cerium oxide single crystal grains having a grain size ranging from 10 to 80 nm and the cerium oxide ultrafine particles can be prepared by a method which comprises the steps of mixing, with stirring, an aqueous solution of cerous nitrate with a base in such a mixing ratio that the pH value of the mixture ranges from 5 to 10, then rapidly heating the resulting mixture up to a temperature of 70 to 100.degree. C. and maturing the mixture at that temperature. The cerium oxide ultrafine particles not only have an average particle size ranging from 10 to 80 nm, but also are uniform in the particle size and in the shape.

    摘要翻译： 氧化铈超微粒子主要由粒度为10〜80nm的氧化铈单晶粒子组成，氧化铈超微粒子可以通过以下方法制备：将搅拌下的硝酸铈水溶液 以这样的混合比例使混合物的pH值达到5至10，然后将所得混合物快速加热至70至100℃的温度，并在该温度下熟化混合物。 氧化铈超微粒子的平均粒径不仅为10〜80nm，而且粒径和形状均匀。

    Polishing agent, method for producing the same and method for polishing
    4.
    发明授权
    Polishing agent, method for producing the same and method for polishing 失效
    抛光剂，其制造方法和抛光方法

    公开(公告)号：US5766279A

    公开(公告)日：1998-06-16

    申请号：US719617

    申请日：1996-09-25

    申请人： Naruo Ueda ,  Norikazu Yamamoto ,  Kenzo Hanawa ,  Kazuhiko Kato

    发明人： Naruo Ueda ,  Norikazu Yamamoto ,  Kenzo Hanawa ,  Kazuhiko Kato

    IPC分类号： B24B37/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y99/00 ,  C01B33/113 ,  C01F17/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105

    CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： A fine particulate polishing agent is based on cerium oxide and silicon oxide; a slurry polishing agent comprises the foregoing fine particulate polishing agent which can be prepared by a method which comprises the steps of mixing, with stirring, cerium oxide fine particles, silica sol and a liquid; drying the mixture; mixing the material with a liquid; and then subjecting the mixture to deagglomeration using a wet pulverizing mill to give a slurry. Preferably, the dried particulate material is subjected to a thermal treatment at a high temperature of 150.degree. to 1200.degree. C., preferably 800.degree. to 900.degree. C., thereby to produce a solid solution of cerium oxide and silicon oxide. The slurry polishing agent can ensure the achievement of surface roughness comparable to or superior to that achieved by the colloidal silica polishing agents and a high polishing rate at least comparable to that achieved by the conventional cerium oxide polishing agents.

    摘要翻译： 细颗粒抛光剂基于氧化铈和氧化硅; 浆料抛光剂包括上述微粒抛光剂，其可以通过包括以下步骤的方法制备：在搅拌下混合氧化铈细颗粒，硅溶胶和液体; 干燥混合物; 将材料与液体混合; 然后使用湿磨粉碎机对混合物进行解聚，得到浆料。 优选将干燥的颗粒材料在150℃至1200℃，优选800-900℃的高温下进行热处理，从而产生氧化铈和氧化硅的固溶体。 浆料抛光剂可以确保实现与胶体二氧化硅抛光剂相比或优于胶体二氧化硅抛光剂的表面粗糙度，以及与常规二氧化铈抛光剂所达到的至少相当的高抛光速率。

    GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP
    6.
    发明申请
    GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
    III族氮化物半导体发光器件，制造III族氮化物半导体发光器件的方法和灯

    公开(公告)号：US20090315046A1

    公开(公告)日：2009-12-24

    申请号：US12373655

    申请日：2007-08-15

    申请人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki

    发明人： Hisayuki Miki ,  Kenzo Hanawa ,  Yasumasa Sasaki

    IPC分类号： H01L33/00

    CPC分类号： H01L33/007 ,  C23C14/0036 ,  C23C14/0641 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.

    摘要翻译： 本发明提供了具有高生产率和良好发射特性的III族氮化物化合物半导体发光器件，制造III族氮化物半导体发光器件和灯的方法。 一种III族氮化物半导体发光元件的制造方法，其特征在于，在基板11上，使用溅射法，将包含Ga作为III族元素的III族氮化物半导体化合物半导体层形成为半导体层。 基板11和溅射靶被配置成彼此面对，并且基板11和溅射靶之间的间隙在20〜100mm的范围内。 此外，当通过溅射法形成半导体层时，对基板11施加大于0.1W / cm 2的偏压。此外，当形成半导体层时，将氮和氩供应到用于溅射的室中 。

    Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus
    8.
    发明授权
    Magnetic recording medium, production process thereof, and magnetic recording and reproducing apparatus 失效
    磁记录介质，其制造方法以及磁记录和重放装置

    公开(公告)号：US06926977B2

    公开(公告)日：2005-08-09

    申请号：US10277208

    申请日：2002-10-22

    申请人： Hiroshi Osawa ,  Kenzo Hanawa

    发明人： Hiroshi Osawa ,  Kenzo Hanawa

    IPC分类号： G11B5/64 ,  G11B5/66 ,  G11B5/73 ,  G11B5/70

    CPC分类号： G11B5/7325 ,  G11B5/656 ,  G11B5/66

    摘要： A magnetic recording medium having a non-magnetic substrate, a non-magnetic undercoat layer, a plurality of magnetic layers, and a protective film, is disclosed. At least one non-magnetic coupling layer is provided above the non-magnetic undercoat layer, a first magnetic layer is provided beneath the non-magnetic coupling layer and a second magnetic layer is provided atop the non-magnetic coupling layer, and the first magnetic layer is formed of a CoRu-based alloy, a CoRe-based alloy, a CoIr-based alloy, or a CoOs-based alloy.

    摘要翻译： 公开了一种具有非磁性基底，非磁性底涂层，多个磁性层和保护膜的磁记录介质。 在非磁性底涂层上方设置至少一个非磁性耦合层，第一磁性层设置在非磁性耦合层的下方，第二磁性层设置在非磁性耦合层的顶部，第一磁性层 层由CoRu基合金，CoRe基合金，CoIr基合金或CoO基合金形成。

    Group III nitride semiconductor multilayer structure and production method thereof
    9.
    发明授权
    Group III nitride semiconductor multilayer structure and production method thereof 有权
    III族氮化物半导体多层结构及其制备方法

    公开(公告)号：US08471266B2

    公开(公告)日：2013-06-25

    申请号：US13493972

    申请日：2012-06-11

    申请人： Kenzo Hanawa ,  Yasumasa Sasaki

    发明人： Kenzo Hanawa ,  Yasumasa Sasaki

    IPC分类号： H01L33/40

    CPC分类号： H01L21/0262 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/325 ,  H01S5/0213 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

    摘要： According to the present invention, an AlN crystal film seed layer having high crystallinity is combined with selective/lateral growth, whereby a Group III nitride semiconductor multilayer structure more enhanced in crystallinity can be obtained. The Group III nitride semiconductor multilayer structure of the present invention is a Group III nitride semiconductor multilayer structure where an AlN crystal film having a crystal grain boundary interval of 200 nm or more is formed as a seed layer on a C-plane sapphire substrate surface by a sputtering method and an underlying layer, an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, each composed of a Group III nitride semiconductor, are further stacked, wherein regions in which the seed layer is present and is absent are formed on the C-plane sapphire substrate surface and/or regions capable of epitaxial growth and incapable of epitaxial growth are formed in the underlying layer.

    摘要翻译： 根据本发明，具有高结晶度的AlN晶体膜晶种层与选择性/横向生长结合，从而可以获得结晶度更高的III族氮化物半导体多层结构。 本发明的III族氮化物半导体多层结构体是III型氮化物半导体多层结构体，其中，在C面蓝宝石衬底表面上形成晶面间距为200nm以上的AlN结晶膜作为晶种层， 溅射方法和下层，分别由III族氮化物半导体构成的n型半导体层，发光层和p型半导体层进一步层叠，其中存在种子层的区域 并且不存在形成在C面蓝宝石衬底表面上和/或能够外延生长和不能外延生长的区域形成在下层中。